摘要:
An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.
摘要:
Optical transmitters are disclosed, one example of which includes a vertical cavity surface emitting laser that includes a substrate upon which a lower mirror is disposed. In this example, a spacer is disposed between the lower mirror and an active region. Another spacer separates the active region and an upper mirror. The upper mirror includes an oxide insulating region that is damaged by ion implantation so that desirable effects are achieved with respect to lateral sheet resistance, and quantum well recombination centers in the active region.
摘要:
Optoelectronic device including integrated light emitting device and photodiode. The optoelectronic device includes a light emitting, device such as a vertical cavity surface emitting laser (VCSEL) or resonant cavity light emitting diode (RCLED). A photodiode is also included in the optoelectronic device. Between the light emitting device and the photodiode is a transition region. At least part of the transition region is shorted. A metal contact provides a contact to both the light emitting device and the photodiode.
摘要:
Methods of conducting wafer level burn-in (WLBI) of semiconductor devices are presented wherein systems are provided having at least two electrodes (210, 215). Electrical bias (920) and/or thermal power (925) is applied on each side of a wafer (100) having back and front electrical contacts for semiconductor devices borne by the wafer. A pliable conductive layer (910) is described for supplying pins on the device side of a wafer with electrical contact and/or also for providing protection to the wafer from mechanical pressure being applied to its surfaces. Use of a cooling system (950) is also described for enabling the application of a uniform temperature to a wafer undergoing burn-in. Wafer level burn-in is performed by applying electrical and physical contact (915) using an upper contact plate to individual contacts for the semiconductor devices; applying electrical and physical contact using a lower contact plate (910) to a substrate surface of said semiconductor wafer; providing electrical power (920) to said semiconductor devices through said upper and lower second contact plates from a power source coupled to said upper and lower contacts plates; monitoring and controlling electrical power (935) to said semiconductor devices for a period in accordance with a specified burn-in criteria; removing electrical power at completion of said period (955); and removing electrical and physical contact to said semiconductor wafer (965).
摘要:
A photo-imaged stress management layer for a semiconductor device is described. The stress management layer is located on an outer surface of a semiconductor device and may be patterned to address certain stress compensation requirements of the semiconductor device. The stress management layer may be manufactured onto the semiconductor device using a photolithographic procedure that allows both simple and complex patterns to be realized.
摘要:
Simplified laser drivers for closed path digital optical cables and digital optical cables including the simplified laser drivers. The laser driver can include less transistors than conventional laser drivers for optical communication cables. The laser can include a bias source and modulation source. The bias source can have a single constant current bias point for all laser diodes. The modulation current source can have a single temperature coefficient for all laser diodes. The laser driver can exclude, for example, any one of or combination of temperature compensation of the modulation or bias current sources, external programming of the modulation or bias current sources, power control based on output of the laser diode, and/or control based on feedback received from a monitor device or other sensor within the cables.
摘要:
The present invention relates to controlling parameters of an optical output of an optical transmitter. An optical package can be selected based on a level of attenuation of a parameter of a transmitter output by the optical package. The laser and the optical package can be assembled and a parameter of the transmitter output can be measured. An optical barrel can be selected based on the measurement, wherein the optical barrel is selected based on an attenuation level to satisfy a range of a desired parameter value. The optical package and the optical barrel can be assembled. A system for assembling the optical device is also described.
摘要:
An optical device is disclosed that includes a chip containing a Vertical Cavity Surface Emitting Laser (VCSEL) active region that produces a laser beam on a first axis. The VCSEL can further include a post having a central axis offset a distance from the first axis. A lens can be mounted on the post such that it bends the laser beam away from the first axis. Alternately, the chip can include multiple VCSEL active regions each of which produces a laser beam on a different axis. The chip can include a post having a central axis offset from the laser beam axes. A lens can be mounted on the post such that the lens bends the laser beams away from the central axis.
摘要:
Digital optical cables for communication between digital consumer electronic devices. The digital optical cable can include an optical fiber, a first interface configured to couple a digital source device to a first end of the optical fiber, the first interface can comprise an optical transmitter for receiving an electronic video signal from the digital source device, converting the electronic video signal to an optical signal, and for transmitting the optical signal onto the first end of the optical fiber. A second interface can be configured to couple a digital sink device to a second end of the optical fiber, the second interface comprising an optical receiver for receiving the optical signal transmitted by the optical transmitter from the second end of the optical fiber, converting the optical signal to an electronic video signal, and transmitting the electronic signal to the digital sink device.
摘要:
Methods for fabricating an optical device that exhibits improved conduction and reflectivity, and minimized absorption. Steps include forming a plurality of mirror periods designed to reflect an optical field having peaks and nulls. The formation of a portion of the plurality of minor periods includes forming a first layer having a thickness of less than one-quarter wavelength of the optical field; forming a first compositional ramp on the first layer; and forming a second layer on the compositional ramp, the second layer having a different index of refraction than the first layer and having a thickness such that the nulls of the optical field occur within the second layer and not within the compositional ramp, and wherein forming the second layer further comprises heavily doping the second layer at a location of the nulls of the optical field.