Geometric optimizations for reducing spontaneous emissions in photodiodes
    11.
    发明申请
    Geometric optimizations for reducing spontaneous emissions in photodiodes 有权
    减少光电二极管自发辐射的几何优化

    公开(公告)号:US20050286586A1

    公开(公告)日:2005-12-29

    申请号:US11027383

    申请日:2004-12-30

    IPC分类号: H01S5/00 H01S5/026 H01S5/183

    摘要: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

    摘要翻译: 一种降低激光器有源区自发发射效应的光学结构。 光学结构包括优化以减少自发辐射的影响。 光学结构包括具有顶部和底部DBR反射镜的VCSEL和连接到反射镜的有源区域。 光学结构还包括连接到VCSEL的光电二极管。 可以在光学结构中包括一个或多个优化,包括光学吸收材料,改变结构的几何形状以改变反射角度,使用光学孔径,改变一个或多个反射镜的反射率,将光电二极管改变为对自发辐射更为不透明 ,并使用离子注入来降低光致发光效率。

    Implant damaged oxide insulating region in vertical cavity surface emitting laser
    12.
    发明申请
    Implant damaged oxide insulating region in vertical cavity surface emitting laser 有权
    植入物在垂直腔表面发射激光器中损坏氧化物绝缘区域

    公开(公告)号:US20050018729A1

    公开(公告)日:2005-01-27

    申请号:US10922028

    申请日:2004-08-19

    IPC分类号: H01S5/183 H01S5/20 H01S5/00

    摘要: Optical transmitters are disclosed, one example of which includes a vertical cavity surface emitting laser that includes a substrate upon which a lower mirror is disposed. In this example, a spacer is disposed between the lower mirror and an active region. Another spacer separates the active region and an upper mirror. The upper mirror includes an oxide insulating region that is damaged by ion implantation so that desirable effects are achieved with respect to lateral sheet resistance, and quantum well recombination centers in the active region.

    摘要翻译: 公开了光发射器,其一个示例包括垂直腔表面发射激光器,其包括其上设置有下反射镜的衬底。 在该示例中,间隔件设置在下反射镜和有源区域之间。 另一个隔离物分离有源区域和上反射镜。 上反射镜包括通过离子注入而损坏的氧化物绝缘区域,从而在有源区域中获得关于侧向薄层电阻和量子阱复合中心的期望效果。

    Integrated light emitting device and photodiode with ohmic contact
    13.
    发明申请
    Integrated light emitting device and photodiode with ohmic contact 有权
    集成发光器件和光电二极管与欧姆接触

    公开(公告)号:US20060146904A1

    公开(公告)日:2006-07-06

    申请号:US11026699

    申请日:2004-12-30

    IPC分类号: H01S5/00

    摘要: Optoelectronic device including integrated light emitting device and photodiode. The optoelectronic device includes a light emitting, device such as a vertical cavity surface emitting laser (VCSEL) or resonant cavity light emitting diode (RCLED). A photodiode is also included in the optoelectronic device. Between the light emitting device and the photodiode is a transition region. At least part of the transition region is shorted. A metal contact provides a contact to both the light emitting device and the photodiode.

    摘要翻译: 光电器件包括集成发光器件和光电二极管。 光电子器件包括诸如垂直腔表面发射激光器(VCSEL)或谐振腔发光二极管(RCLED)的发光器件。 光电二极管也包括在光电器件中。 在发光器件和光电二极管之间是过渡区域。 至少部分过渡区域短路。 金属触点提供与发光器件和光电二极管的接触。

    Methods of conducting wafer level burn-in of electronic devices
    14.
    发明申请
    Methods of conducting wafer level burn-in of electronic devices 有权
    进行电子器件晶圆级老化的方法

    公开(公告)号:US20060097337A1

    公开(公告)日:2006-05-11

    申请号:US10486661

    申请日:2002-08-12

    IPC分类号: H01L31/06

    摘要: Methods of conducting wafer level burn-in (WLBI) of semiconductor devices are presented wherein systems are provided having at least two electrodes (210, 215). Electrical bias (920) and/or thermal power (925) is applied on each side of a wafer (100) having back and front electrical contacts for semiconductor devices borne by the wafer. A pliable conductive layer (910) is described for supplying pins on the device side of a wafer with electrical contact and/or also for providing protection to the wafer from mechanical pressure being applied to its surfaces. Use of a cooling system (950) is also described for enabling the application of a uniform temperature to a wafer undergoing burn-in. Wafer level burn-in is performed by applying electrical and physical contact (915) using an upper contact plate to individual contacts for the semiconductor devices; applying electrical and physical contact using a lower contact plate (910) to a substrate surface of said semiconductor wafer; providing electrical power (920) to said semiconductor devices through said upper and lower second contact plates from a power source coupled to said upper and lower contacts plates; monitoring and controlling electrical power (935) to said semiconductor devices for a period in accordance with a specified burn-in criteria; removing electrical power at completion of said period (955); and removing electrical and physical contact to said semiconductor wafer (965).

    摘要翻译: 提供了进行半导体器件的晶片级老化(WLBI)的方法,其中提供具有至少两个电极(210,215)的系统。 电晶体(920)和/或热功率(925)施加在具有由晶片承载的半导体器件的背面和前部电触头的晶片(100)的每一侧上。 描述了一种柔性导电层(910),用于在具有电接触的晶片的器件侧上提供引脚和/或用于为施加到其表面的机械压力提供对晶片的保护。 还描述了使用冷却系统(950),以使得能够对经历老化的晶片施加均匀的温度。 通过使用上接触板向半导体器件的单个触点施加电和物理接触(915)来执行晶片级老化; 使用下接触板(910)将电和物理接触施加到所述半导体晶片的衬底表面; 通过所述上和下第二接触板从耦合到所述上和下接触板的电源向所述半导体器件提供电力(920); 根据指定的老化标准对所述半导体器件监控和控制电力(935)一段时间; 在所述期间完成时移除电力(955); 以及去除与所述半导体晶片(965)的电和物理接触。

    Photo-imaged stress management layer for semiconductor devices
    15.
    发明授权
    Photo-imaged stress management layer for semiconductor devices 有权
    用于半导体器件的光成像应力管理层

    公开(公告)号:US07232692B2

    公开(公告)日:2007-06-19

    申请号:US11071940

    申请日:2005-03-04

    IPC分类号: H01L21/00

    摘要: A photo-imaged stress management layer for a semiconductor device is described. The stress management layer is located on an outer surface of a semiconductor device and may be patterned to address certain stress compensation requirements of the semiconductor device. The stress management layer may be manufactured onto the semiconductor device using a photolithographic procedure that allows both simple and complex patterns to be realized.

    摘要翻译: 描述了用于半导体器件的光成像应力管理层。 应力管理层位于半导体器件的外表面上并且可以被图案化以解决半导体器件的某些应力补偿要求。 应力管理层可以使用允许简单和复杂图案实现的光刻过程在半导体器件上制造。

    LASER DRIVERS FOR CLOSED PATH OPTICAL CABLES
    16.
    发明申请
    LASER DRIVERS FOR CLOSED PATH OPTICAL CABLES 有权
    激光驱动器关闭路径光纤

    公开(公告)号:US20070058976A1

    公开(公告)日:2007-03-15

    申请号:US11470623

    申请日:2006-09-06

    IPC分类号: H04J14/08

    摘要: Simplified laser drivers for closed path digital optical cables and digital optical cables including the simplified laser drivers. The laser driver can include less transistors than conventional laser drivers for optical communication cables. The laser can include a bias source and modulation source. The bias source can have a single constant current bias point for all laser diodes. The modulation current source can have a single temperature coefficient for all laser diodes. The laser driver can exclude, for example, any one of or combination of temperature compensation of the modulation or bias current sources, external programming of the modulation or bias current sources, power control based on output of the laser diode, and/or control based on feedback received from a monitor device or other sensor within the cables.

    摘要翻译: 用于闭路数字光缆和数字光缆的简化激光驱动器,包括简化的激光驱动器。 激光驱动器可以包括比用于光通信电缆的传统激光驱动器更少的晶体管。 激光器可以包括偏置源和调制源。 偏置源可以为所有激光二极管提供单个恒定电流偏置点。 调制电流源可以具有所有激光二极管的单一温度系数。 激光驱动器可以例如排除调制或偏置电流源的温度补偿中的任何一种或组合,调制或偏置电流源的外部编程,基于激光二极管的输出的功率控制和/或基于 在来自监视器装置或电缆内的其他传感器的反馈。

    Attenuated barrel selection algorithms
    17.
    发明申请
    Attenuated barrel selection algorithms 有权
    衰减桶选择算法

    公开(公告)号:US20060263014A1

    公开(公告)日:2006-11-23

    申请号:US11130511

    申请日:2005-05-17

    IPC分类号: G02B6/36

    CPC分类号: G02B6/4204

    摘要: The present invention relates to controlling parameters of an optical output of an optical transmitter. An optical package can be selected based on a level of attenuation of a parameter of a transmitter output by the optical package. The laser and the optical package can be assembled and a parameter of the transmitter output can be measured. An optical barrel can be selected based on the measurement, wherein the optical barrel is selected based on an attenuation level to satisfy a range of a desired parameter value. The optical package and the optical barrel can be assembled. A system for assembling the optical device is also described.

    摘要翻译: 本发明涉及控制光发射机的光输出的参数。 可以基于由光学封装输出的发射器的参数的衰减水平来选择光学封装。 可以组装激光器和光学封装,并且可以测量发射器输出的参数。 可以基于测量来选择光学镜筒,其中基于衰减水平来选择光学镜筒以满足期望的参数值的范围。 可以组装光学封装和光学镜筒。 还描述了用于组装光学装置的系统。

    On-chip lenses for diverting vertical cavity surface emitting laser beams
    18.
    发明申请
    On-chip lenses for diverting vertical cavity surface emitting laser beams 失效
    用于转向垂直腔表面发射激光束的片上透镜

    公开(公告)号:US20060227844A1

    公开(公告)日:2006-10-12

    申请号:US11103277

    申请日:2005-04-11

    申请人: James Guenter

    发明人: James Guenter

    IPC分类号: H01S3/08

    摘要: An optical device is disclosed that includes a chip containing a Vertical Cavity Surface Emitting Laser (VCSEL) active region that produces a laser beam on a first axis. The VCSEL can further include a post having a central axis offset a distance from the first axis. A lens can be mounted on the post such that it bends the laser beam away from the first axis. Alternately, the chip can include multiple VCSEL active regions each of which produces a laser beam on a different axis. The chip can include a post having a central axis offset from the laser beam axes. A lens can be mounted on the post such that the lens bends the laser beams away from the central axis.

    摘要翻译: 公开了一种光学装置,其包括含有在第一轴上产生激光束的垂直腔表面发射激光器(VCSEL)有源区的芯片。 VCSEL还可以包括具有偏离第一轴线的距离的中心轴线的柱。 透镜可以安装在柱上,使得其将激光束弯曲离开第一轴线。 或者,芯片可以包括多个VCSEL有源区域,每个VCSEL有源区域在不同的轴上产生激光束。 芯片可以包括具有偏离激光束轴的中心轴的柱。 透镜可以安装在柱上,使得透镜将激光束弯曲远离中心轴线。

    Optical cables for consumer electronics

    公开(公告)号:US20060067690A1

    公开(公告)日:2006-03-30

    申请号:US11198619

    申请日:2005-08-05

    IPC分类号: H04J14/00

    CPC分类号: H04N7/22 G02B6/4246

    摘要: Digital optical cables for communication between digital consumer electronic devices. The digital optical cable can include an optical fiber, a first interface configured to couple a digital source device to a first end of the optical fiber, the first interface can comprise an optical transmitter for receiving an electronic video signal from the digital source device, converting the electronic video signal to an optical signal, and for transmitting the optical signal onto the first end of the optical fiber. A second interface can be configured to couple a digital sink device to a second end of the optical fiber, the second interface comprising an optical receiver for receiving the optical signal transmitted by the optical transmitter from the second end of the optical fiber, converting the optical signal to an electronic video signal, and transmitting the electronic signal to the digital sink device.

    Asymmetric DBR pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption
    20.
    发明授权
    Asymmetric DBR pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption 有权
    非对称DBR对与周期性和调制掺杂结合,以最大限度地提高传导和反射率,并使吸收最小化

    公开(公告)号:US08481350B2

    公开(公告)日:2013-07-09

    申请号:US13537340

    申请日:2012-06-29

    IPC分类号: H01L21/00

    摘要: Methods for fabricating an optical device that exhibits improved conduction and reflectivity, and minimized absorption. Steps include forming a plurality of mirror periods designed to reflect an optical field having peaks and nulls. The formation of a portion of the plurality of minor periods includes forming a first layer having a thickness of less than one-quarter wavelength of the optical field; forming a first compositional ramp on the first layer; and forming a second layer on the compositional ramp, the second layer having a different index of refraction than the first layer and having a thickness such that the nulls of the optical field occur within the second layer and not within the compositional ramp, and wherein forming the second layer further comprises heavily doping the second layer at a location of the nulls of the optical field.

    摘要翻译: 制造具有改善的导电性和反射性以及最小吸收的光学器件的方法。 步骤包括形成设计成反射具有峰值和零点的光场的多个反射镜周期。 形成多个次周期的一部分包括形成厚度小于光场四分之一波长的第一层; 在第一层上形成第一组合斜面; 并且在所述组成斜面上形成第二层,所述第二层具有与所述第一层不同的折射率,并且具有使得所述光学场的零点发生在所述第二层内而不在所述组成斜面内的厚度,并且其中形成 第二层还包括在光场的零点的位置处重掺杂第二层。