公开(公告)号：US07177178B2

公开(公告)日：2007-02-13

申请号：US11292635

申请日：2005-12-02

申请人： James M. Daughton ,  Arthur V. Pohm

发明人： James M. Daughton ,  Arthur V. Pohm

IPC分类号： G11C11/14 ,  G11C11/15

CPC分类号： G11C11/16 ,  G11C11/15 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/226 ,  H01L43/08

摘要： A ferromagnetic thin-film based digital memory having a bit structures therein a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.

摘要翻译： 一种基于铁磁性薄膜的数字存储器，其中具有磁性材料膜的位结构，其中磁性材料膜的磁性能保持在低于不能保持这种磁性的临界温度以下，并且还可以具有多个字线结构，每个具有 在相应的一个位结构中位于磁性材料膜两侧的加热部分。 这些位结构被充分热隔离，以允许相邻字线或位结构中的选定电流或两者都选择性地加热位结构以接近临界温度。 这种钻头结构可以具有三个磁性材料层，每个磁性材料层具有其自身的临界温度以维持而不保持其磁性。

公开(公告)号：US07023723B2

公开(公告)日：2006-04-04

申请号：US10706613

申请日：2003-11-12

申请人： James M. Daughton ,  Arthur V. Pohm

发明人： James M. Daughton ,  Arthur V. Pohm

IPC分类号： G11C11/14 ,  G11C11/15

CPC分类号： G11C11/16 ,  G11C11/15 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/226 ,  H01L43/08

摘要： A ferromagnetic thin-film based digital memory having a bit structures therein a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.

公开(公告)号：US06963098B2

公开(公告)日：2005-11-08

申请号：US10875082

申请日：2004-06-23

申请人： James M. Daughton ,  Arthur V. Pohm

发明人： James M. Daughton ,  Arthur V. Pohm

IPC分类号： G01R20060101 ,  G11C11/00 ,  G11C11/16 ,  H01L31/119

CPC分类号： H01L27/228 ,  G11C11/16 ,  H01L43/10

摘要： A ferromagnetic thin-film based digital memory having a substrate supporting bit structures that are electrically interconnected with information storage and retrieval circuitry and having magnetic material films in which a characteristic magnetic property is substantially maintained below an associated critical temperature above which such magnetic property is not maintained separated by at least one layer of a nonmagnetic material with each bit structure having an interconnection structure providing electrical contact thereto at a contact surface thereof substantially parallel to the intermediate layer positioned between the first contact surface and the substrate. A plurality of word line structures located across from a corresponding one of the bit structures on an opposite side of the intermediate layer of a corresponding one of said bit structures from its interconnection structure provides electrical contact thereto. Sufficient electrical current selectively drawn through each of these bit structures and its interconnection structure can cause substantial heating of that bit structure to raise temperatures thereof to have at least one of the magnetic material films therein at least approach its corresponding associated critical temperature while being substantially above temperatures of at least an adjacent said bit structure because of sufficient thermal isolation.

公开(公告)号：US06462541B1

公开(公告)日：2002-10-08

申请号：US09439892

申请日：1999-11-12

申请人： Dexin Wang ,  Mark C. Tondra ,  James M. Daughton

发明人： Dexin Wang ,  Mark C. Tondra ,  James M. Daughton

IPC分类号： G01R3302

CPC分类号： B82Y25/00 ,  G01R33/093

摘要： A ferromagnetic thin-film based sensing arrangement having a plurality of magnetic field sensors on a substrate each having an intermediate layer of a nonmagnetic material with two major surfaces on opposite sides thereof with one of a pair of magnetically permeable films each of a magnetoresistive, anisotropic ferromagnetic material correspondingly positioned thereon with first and second oriented sensors therein respectively having a selected and a reversing magnetization orientation structure provided with one of said pair of permeable films thereof for orienting its magnetization in a selected direction absent an externally applied magnetic field in at least partly opposing directions. Alternatively, these magnetizations of the films can be oriented in the same direction but with the other film member of the pair provided adjacent a coupling layer that antiferromagnetically couples thereto a further ferromagnetic layer on an opposite side thereof of a lesser thickness for one sensor and a greater thickness for the other. Such a sensing arrangement can be formed by providing a succession of material layers on a substrate with one or more coupling layers for antiferromagnetically coupling ferromagnetic layers on opposite sides thereof including a permeable film. Selective removal of the succession follows to provide unequal numbers of coupling layers for the two kinds of sensors or unequal thicknesses of corresponding ferromagnetic layers corresponding to the coupling layer and the providing of a pinning layer for both kinds of sensors which are thereafter separated by further material removal.

摘要翻译： 一种基于铁磁薄膜的感测装置，其具有在基板上的多个磁场传感器，每个磁场传感器具有非磁性材料的中间层，在其相对侧上具有两个主表面，其中一个磁导膜与磁阻，各向异性 相应地设置在其上的第一和第二定向传感器的铁磁材料分别具有选定的和反向的磁化取向结构，所述磁性取向结构设置有所述一对可渗透膜中的一个，用于在选定的方向上使其磁化方向定向，而不存在外部施加的磁场，至少部分 相反的方向 或者，膜的这些磁化可以在相同的方向上取向，但是一对中的另一个膜构件邻近耦合层设置，其反铁磁耦合到一个传感器的较小厚度的相对侧上的另一个铁磁层，并且 更大的厚度为另一个。 这样的感测装置可以通过在衬底上提供一系列材料层而形成，该层具有一个或多个耦合层，用于在其相对侧上反铁磁耦合铁磁层，包括可渗透膜。 继续的选择性删除是为两种传感器提供不相等数量的耦合层，或者对应于耦合层的相应铁磁层的不等厚度以及为这两种传感器提供钉扎层，然后由另外的材料分离 删除。

公开(公告)号：US06404191B2

公开(公告)日：2002-06-11

申请号：US09814637

申请日：2001-03-22

申请人： James M. Daughton ,  Arthur V. Pohm

发明人： James M. Daughton ,  Arthur V. Pohm

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3948 ,  G11B5/3954 ,  G11B5/3967 ,  G11B5/488 ,  G11B5/59683 ,  G11B2005/3996

摘要： A plurality of magnetic field sensing structures in a monolithic integrated circuit chip structure to provide output signals at outputs thereof of magnetic field changes provided therein from corresponding sources having poled pair structures with a gap space between them with adjacent ones of the magnetic field sensing structures that are interconnected with a circuit formed in the monolithic integrated circuit chip such as an amplifier. The paired pole structures may intersect a surface of the chip perpendicular to the major surfaces thereof or in one of, or a surface parallel to, the major surfaces thereof. A magnetic field generating structure may also be included in the chip.

摘要翻译： 单片集成电路芯片结构中的多个磁场感测结构，用于在其输出端提供输出信号，该输出信号由具有极化对结构的相应源提供，其中它们与相邻的磁场感测结构之间具有间隙， 与形成在诸如放大器的单片集成电路芯片中的电路互连。 成对的极结构可以垂直于芯片的主表面或与其主表面平行的一个或表面相交。 磁场产生结构也可以包括在芯片中。

公开(公告)号：US06340886B1

公开(公告)日：2002-01-22

申请号：US08907561

申请日：1997-08-08

申请人： James M. Daughton ,  Arthur V. Pohm

发明人： James M. Daughton ,  Arthur V. Pohm

IPC分类号： G01R3309

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3954 ,  G11B2005/3996

摘要： A magnetic field sensing structure for sensing magnetic field changes provided therein having a pair of pole structures with a gap space between them that each include permeable material and end in substantially a common surface. A plurality of field sensing structures is positioned successively in the gap space to be supported between the pole structures with each having an end thereof substantially the common surface. These sensing structures are formed of a plurality of magnetoresistive, anisotropic, ferromagnetic thin-film layers at least two of which are separated from one another by a nonmagnetic, electrically conductive layer positioned between them. They are electrically connected to one another adjacent the common surface, and may be electrically connected to one of the pole structures.

摘要翻译： 用于感测其中提供的磁场变化的磁场感测结构具有一对磁极结构，它们之间具有间隙，每个磁极结构包括可渗透材料并且终止于基本上共同的表面。 多个场感测结构连续地定位在间隙空间中，以支撑在极结构之间，每个具有基本上共同的表面。 这些感测结构由多个磁阻各向异性的强磁性薄膜层形成，其中至少两个薄膜层通过位于它们之间的非磁性导电层彼此分开。 它们相邻于公共表面彼此电连接，并且可以电连接到极结构中的一个。

公开(公告)号：US06300617B1

公开(公告)日：2001-10-09

申请号：US09261899

申请日：1999-03-03

申请人： James M. Daughton ,  Robert T. Fayfield ,  Theodore M. Hermann ,  John F. Stokes

发明人： James M. Daughton ,  Robert T. Fayfield ,  Theodore M. Hermann ,  John F. Stokes

IPC分类号： H01L3100

CPC分类号： G01R15/205 ,  H01L2224/48137 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H04B5/00 ,  H04B5/0043 ,  H04B5/005

摘要： A current determiner having an output at which representations of input currents are provided comprising an input conductor for the input current and a current sensor supported on a substrate electrically isolated from one another but with the sensor positioned in the magnetic fields arising about the input conductor due to any input currents. The sensor extends along the substrate in a direction at an angle to the extent of the input conductor and is formed of at least a pair of thin-film ferromagnetic layers separated by a nonmagnetic layer with one of these two ferromagnetic thin-film layers having a magnetization that is substantially maintained in a selected direction despite the magnetic fields arising from the input currents causing reversals of direction of magnetization of that remaining one of these two ferromagnetic thin-film layers. This first current sensor is spaced apart from the input conductor at least in part by a polymeric electrical insulating material, and the input conductor can be provided on a mechanically stiff base supported on such material and provided with an electric field interrupter supporting such material between the first current sensor and the input conductor. The sensor can be electrically connected to a electronic circuitry formed in the substrate as a monolithic integrated circuit sharing a common reference, and two such monolithic integrated chips in a housing can provide duplex information signal transmission.

摘要翻译： 具有输出的电流确定器包括输入电流的表示，其包括用于输入电流的输入导体和支撑在彼此电隔离的基板上的电流传感器，但是传感器位于围绕输入导体的磁场中 到任何输入电流。 传感器沿着与输入导体的程度成一定角度的方向沿着衬底延伸，并且由至少一对由非磁性层分离的薄膜铁磁层形成，其中这两个铁磁性薄膜层中的一个具有 尽管从输入电流产生的磁场导致这两个铁磁性薄膜层中的剩余的一个的磁化方向的反转，但是基本保持在所选方向上的磁化。 该第一电流传感器至少部分地由聚合物电绝缘材料与输入导体间隔开，并且输入导体可以设置在支撑在这种材料上的机械刚性基底上，并且设置有电场断续器， 第一电流传感器和输入导体。 传感器可以电连接到形成在衬底中的电子电路，作为共享共同参考的单片集成电路，并且外壳中的两个这样的单片集成芯片可以提供双工信息信号传输。

公开(公告)号：US06275411B1

公开(公告)日：2001-08-14

申请号：US09435598

申请日：1999-11-08

申请人： James M. Daughton ,  Brenda A. Everitt ,  Arthur V. Pohm

发明人： James M. Daughton ,  Brenda A. Everitt ,  Arthur V. Pohm

IPC分类号： G11C1100

CPC分类号： H01L27/224 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3906 ,  G11B2005/3996 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607 ,  H01F10/20 ,  H01F10/205 ,  H01F10/32 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L27/228 ,  H01L43/08

摘要： A digital data memory having a bit structure in a memory cell based on a dielectric intermediate separating material with two major surfaces having thereon an anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.

摘要翻译： 一种数字数据存储器，其具有基于介电中间分离材料的存储单元中的位结构，其中两个主表面具有不同厚度的各向异性铁磁薄膜。 这些位结构在结构范围限制内制造，令人满意地工作，并且被制造为存储线结构的串联连接构件。 在数据存储和检索操作中，使用与这些存储器单元相对应的相应的导电字线结构来选择或操作它们，或两者。

公开(公告)号：US4918655A

公开(公告)日：1990-04-17

申请号：US161534

申请日：1988-02-29

申请人： James M. Daughton

发明人： James M. Daughton

IPC分类号： H01L27/22 ,  G11C11/15 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

CPC分类号： G11C11/15 ,  Y10T29/49069

摘要： A component metallization interconnection system in a monolithic integrated circuit system for providing electrical interconnections between circuit components and for providing magnetic interaction regions for information storage.

公开(公告)号：US08884606B2

公开(公告)日：2014-11-11

申请号：US13095063

申请日：2011-04-27

申请人： John K. Myers ,  James M. Daughton

发明人： John K. Myers ,  James M. Daughton

IPC分类号： G01R15/18 ,  G01R15/20

CPC分类号： G01R15/205 ,  G01R15/202 ,  G01R15/207 ,  H01L2924/0002 ,  H01L2924/00

摘要： A current determiner comprising a first input conductor and a first current sensor, formed of a plurality of magnetoresistive, anisotropic, ferromagnetic thin-film layers at least two of which are separated from one another by a nonmagnetic layer positioned therebetween, and both supported on a first side of a substrate adjacent to but electrically isolated from one another with the first current sensor positioned in those magnetic fields arising from any input currents. A first shield/concentrator of a material exhibiting a substantial magnetic permeability is positioned on a second side of the substrate opposite the first side of the substrate. The substrate can include a monolithic integrated circuit structure containing electronic circuit components of which at least one is electrically connected to the first input conductor.

摘要翻译： 一种电流确定器，包括由多个磁阻各向异性铁磁薄膜层形成的第一输入导体和第一电流传感器，其中至少两个通过位于它们之间的非磁性层彼此分离，并且两者均支撑在 衬底的第一侧邻近但彼此电隔离，第一电流传感器位于由任何输入电流产生的那些磁场中。 表现出实质磁导率的材料的第一屏蔽/集中器位于与基板的第一侧相对的基板的第二侧上。 基板可以包括单片集成电路结构，其包含至少一个电连接到第一输入导体的电子电路部件。