公开(公告)号：US08030188B2

公开(公告)日：2011-10-04

申请号：US12508382

申请日：2009-07-23

Applicant: Mi-Ran Park ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Dae Kon Oh

Inventor： Mi-Ran Park ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Dae Kon Oh

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L21/2258

Abstract: Provided is a method of forming a compound semiconductor device. In the method, a dopant element layer is formed on an undoped compound semiconductor layer. An annealing process is performed to diffuse dopants in the dopant element layer into the undoped compound semiconductor layer, thereby forming a dopant diffusion region. A rapid cooling process is performed using liquid nitrogen with respect to the substrate having the dopant diffusion region.

Abstract translation: 提供一种形成化合物半导体器件的方法。 在该方法中，在未掺杂的化合物半导体层上形成掺杂剂元素层。 执行退火处理以将掺杂剂元素层中的掺杂剂扩散到未掺杂的化合物半导体层中，从而形成掺杂剂扩散区域。 相对于具有掺杂剂扩散区域的基板，使用液氮进行快速冷却处理。

公开(公告)号：US08710547B2

公开(公告)日：2014-04-29

申请号：US13605135

申请日：2012-09-06

Applicant: Jae-Sik Sim ,  Kisoo Kim ,  Bongki Mheen ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

Inventor： Jae-Sik Sim ,  Kisoo Kim ,  Bongki Mheen ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

IPC: H01L29/72

CPC classification number: H01L31/107

Abstract: The inventive concept provides avalanche photo diodes and methods of manufacturing the same. The avalanche photo diode may include a substrate, a light absorption layer formed on the substrate, a clad layer formed on the light absorption layer, an active region formed in the clad layer, a guard ring region formed around the active region, and an insulating region formed between the guard ring region and the active region.

Abstract translation: 本发明的概念提供了雪崩光电二极管及其制造方法。 雪崩光电二极管可以包括基板，形成在基板上的光吸收层，形成在光吸收层上的包覆层，形成在包层中的有源区，形成在有源区周围的保护环区，绝缘 形成在保护环区域和有源区域之间的区域。

公开(公告)号：US20130153962A1

公开(公告)日：2013-06-20

申请号：US13605135

申请日：2012-09-06

Applicant: Jae-Sik SIM ,  Kisoo Kim ,  Bongki Mheen ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

Inventor： Jae-Sik SIM ,  Kisoo Kim ,  Bongki Mheen ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

IPC: H01L31/107 ,  H01L31/18

CPC classification number: H01L31/107

Abstract: The inventive concept provides avalanche photo diodes and methods of manufacturing the same. The avalanche photo diode may include a substrate, a light absorption layer formed on the substrate, a clad layer formed on the light absorption layer, an active region formed in the clad layer, a guard ring region formed around the active region, and an insulating region formed between the guard ring region and the active region.

Abstract translation: 本发明的概念提供了雪崩光电二极管及其制造方法。 雪崩光电二极管可以包括基板，形成在基板上的光吸收层，形成在光吸收层上的包覆层，形成在包层中的有源区，形成在有源区周围的保护环区，绝缘 形成在保护环区域和有源区域之间的区域。

公开(公告)号：US06980075B2

公开(公告)日：2005-12-27

申请号：US10714287

申请日：2003-11-13

Applicant: Bongki Mheen ,  Seok-bong Hyun ,  Dong Woo Suh ,  Jin-Yeong Kang

Inventor： Bongki Mheen ,  Seok-bong Hyun ,  Dong Woo Suh ,  Jin-Yeong Kang

IPC: H01F17/00 ,  H01L21/02 ,  H01L27/08 ,  H01F5/00

CPC classification number: H01L28/10 ,  H01F17/0006 ,  H01L27/08

Abstract: A method for arranging unit inductors of an inductor having metal wiring that can make a full use of self-inductance and mutual-inductance which are determined based on the proportion of the area of an unit inductor and the proportion of the overlapping area with another unit inductor, and an inductor adopting the unit inductor arranging method. The unit inductor arranging method, wherein the inductor includes a first unit inductor, a second inductor and a third inductor, and self-inductance magnitudes of the unit inductors are in the order of the self-inductance of the third inductor>the self-inductance of the second inductor>the self-inductance of the first inductor, includes the steps of: a) coupling one end of the second unit inductor is connected to one end of the first unit inductor and one end of the third unit inductor to the other end of the first unit inductor in order to arrange the first unit inductor between the second and third unit inductors of which mutual-inductance has the largest value in mutual-inductances between the unit inductors; b) coupling the second unit inductor to a first external terminal; and c) coupling the third unit inductor to a second external terminal.

Abstract translation: 一种用于布置具有金属布线的电感器的单元电感器的方法，该电感器可以充分利用基于单位电感器的面积的比例和与另一单元的重叠区域的比例确定的自感和互感 电感器和采用单元电感器布置方法的电感器。 单元电感器布置方法，其中电感器包括第一单元电感器，第二电感器和第三电感器，并且单位电感器的自感大小等于第三电感器的自感量>自感 的第二电感器的自感包括以下步骤：a）耦合第二单元电感器的一端连接到第一单元电感器的一端并且将第三单元电感器的一端连接到另一端 从而将第一单元电感器布置在单元电感器之间的互感中互感具有最大值的第二和第三单元电感器之间; b）将第二单元电感器耦合到第一外部端子; 以及c）将所述第三单元电感器耦合到第二外部端子。

公开(公告)号：US06686640B2

公开(公告)日：2004-02-03

申请号：US10044107

申请日：2002-01-11

Applicant: Bongki Mheen ,  Dongwoo Suh ,  Jin-Yeong Kang

Inventor： Bongki Mheen ,  Dongwoo Suh ,  Jin-Yeong Kang

IPC: H01L2993

CPC classification number: H01L29/66174 ,  H01L29/66242 ,  H01L29/93

Abstract: A varactor includes a semiconductor substrate of a first conductivity type, a high-concentration buried collector region of a second conductivity type formed in an upper portion of the semiconductor substrate, a collector region of the second conductivity type formed on a first surface of the high-concentration buried collector region, a high-concentration collector contact region of the second conductivity type formed on a second surface of the high-concentration buried collector region, a high-concentration silicon-germanium base region of the first conductivity type formed on the collector region, a metal silicide layer formed on the silicon-germanium base region, a first electrode layer formed to contact the metal silicide layer, and a second electrode layer formed to be electrically connected to the collector contact region.

Abstract translation: 变容二极管包括第一导电类型的半导体衬底，形成在半导体衬底的上部的第二导电类型的高浓度集电区，在第一表面上形成第二导电类型的集电极区 浓度埋集电极区域，形成在高浓度埋集体区域的第二表面上的第二导电类型的高浓度集电极接触区域，形成在集电体上的第一导电类型的高浓度硅 - 锗基区域 形成在硅 - 锗基区上的金属硅化物层，形成为与金属硅化物层接触的第一电极层和形成为与集电极接触区电连接的第二电极层。

公开(公告)号：US08742316B2

公开(公告)日：2014-06-03

申请号：US12942338

申请日：2010-11-09

Applicant: Kisoo Kim ,  Eun Soo Nam ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Myungsook Oh

Inventor： Kisoo Kim ,  Eun Soo Nam ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Myungsook Oh

IPC: G01J1/44

CPC classification number: G01J1/46

Abstract: Provided is a photo detector. The photo detector includes: an avalanche photodiode; a bias circuit supplying a bias voltage to one end of the avalanche photodiode; a detection circuit connected to the other end of the avalanche photodiode and detecting a photoelectric current occurring in the avalanche photodiode; and a coupling capacitor connected to the one end or the other end of the avalanche photodiode and supplying a coupling voltage to drive the avalanche photodiode in a Geiger mode.

Abstract translation: 提供了一种光电检测器。 光电检测器包括：雪崩光电二极管; 将偏置电压提供给雪崩光电二极管的一端的偏置电路; 连接到雪崩光电二极管的另一端并检测在雪崩光电二极管中出现的光电流的检测电路; 以及耦合电容器，其连接到雪崩光电二极管的一端或另一端并提供耦合电压以以盖革模式驱动雪崩光电二极管。

公开(公告)号：US20110140168A1

公开(公告)日：2011-06-16

申请号：US12769198

申请日：2010-04-28

Applicant: Jae-Sik SIM ,  Bongki Mheen ,  Myungsook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

Inventor： Jae-Sik SIM ,  Bongki Mheen ,  Myungsook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

IPC: H01L31/107

CPC classification number: H01L31/02327 ,  H01L31/1075

Abstract: Provided is an avalanche photodetector with an integrated micro lens. The avalanche photodetector includes a light absorbing layer on a semiconductor substrate, an amplification layer on the light absorbing layer, a diffusion layer within the amplification layer, and the micro lens disposed corresponding to the diffusion layer. The micro lens includes a first refractive layer and a second refractive layer having a refractive index less than that of the first refractive layer.

Abstract translation: 提供了具有集成微透镜的雪崩光电探测器。 雪崩光电检测器包括半导体衬底上的光吸收层，光吸收层上的放大层，放大层内的扩散层和对应于扩散层设置的微透镜。 微透镜包括折射率小于第一折射层的折射率的第一折射层和第二折射层。

公开(公告)号：US20110133059A1

公开(公告)日：2011-06-09

申请号：US12942338

申请日：2010-11-09

Applicant: Kisoo KIM ,  Eun Soo Nam ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Myungsook Oh

Inventor： Kisoo KIM ,  Eun Soo Nam ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Myungsook Oh

IPC: G01J1/44

CPC classification number: G01J1/46

Abstract: Provided is a photo detector. The photo detector includes: an avalanche photodiode; a bias circuit supplying a bias voltage to one end of the avalanche photodiode; a detection circuit connected to the other end of the avalanche photodiode and detecting a photoelectric current occurring in the avalanche photodiode; and a coupling capacitor connected to the one end or the other end of the avalanche photodiode and supplying a coupling voltage to drive the avalanche photodiode in a Geiger mode.

Abstract translation: 提供了一种光电检测器。 光电检测器包括：雪崩光电二极管; 将偏置电压提供给雪崩光电二极管的一端的偏置电路; 连接到雪崩光电二极管的另一端并检测在雪崩光电二极管中出现的光电流的检测电路; 以及耦合电容器，其连接到雪崩光电二极管的一端或另一端并提供耦合电压以以盖革模式驱动雪崩光电二极管。