公开(公告)号：US08058094B2

公开(公告)日：2011-11-15

申请号：US12707115

申请日：2010-02-17

申请人： Takashi Noguchi ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung ,  Hyuck Lim

发明人： Takashi Noguchi ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung ,  Hyuck Lim

IPC分类号： H01L21/00

CPC分类号： H01L29/78645 ,  H01L27/1288 ,  H01L27/3244 ,  H01L29/78624 ,  H01L29/78696

摘要： A transistor includes; at least two polycrystalline silicon layers disposed substantially parallel to each other, each polycrystalline silicon layer including a channel region and at least two high conductivity regions disposed at opposing sides of the channel region; a gate which corresponds to the channel region of the two polycrystalline silicon layers and which crosses the two polycrystalline silicon layers, and a gate insulating layer interposed between the gate and the two polycrystalline silicon layers, wherein low conductivity regions are disposed adjacent to one edge of the gate and are formed between the channel region and one high conductivity region of each polycrystalline silicon layer.

摘要翻译： 晶体管包括： 至少两个多晶硅层基本上彼此平行地布置，每个多晶硅层包括沟道区和至少两个设置在沟道区相对侧的高导电性区; 对应于两个多晶硅层的沟道区并与两个多晶硅层交叉的栅极和介于栅极和两个多晶硅层之间的栅极绝缘层，其中低导电性区域邻近 并且形成在每个多晶硅层的沟道区域和一个高导电率区域之间。

公开(公告)号：US07700954B2

公开(公告)日：2010-04-20

申请号：US11621627

申请日：2007-01-10

申请人： Takashi Noguchi ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung ,  Hyuck Lim

发明人： Takashi Noguchi ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung ,  Hyuck Lim

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L29/78645 ,  H01L27/1288 ,  H01L27/3244 ,  H01L29/78624 ,  H01L29/78696

摘要： A transistor includes; at least two polycrystalline silicon layers disposed substantially parallel to each other, each polycrystalline silicon layer including a channel region and at least two high conductivity regions disposed at opposing sides of the channel region; a gate which corresponds to the channel region of the two polycrystalline silicon layers and which crosses the two polycrystalline silicon layers, and a gate insulating layer interposed between the gate and the two polycrystalline silicon layers, wherein low conductivity regions are disposed adjacent to one edge of the gate and are formed between the channel region and one high conductivity region of each polycrystalline silicon layer.

摘要翻译： 晶体管包括： 至少两个多晶硅层基本上彼此平行地布置，每个多晶硅层包括沟道区和至少两个设置在沟道区相对侧的高导电性区; 对应于两个多晶硅层的沟道区并与两个多晶硅层交叉的栅极和介于栅极和两个多晶硅层之间的栅极绝缘层，其中低导电性区域邻近 并且形成在每个多晶硅层的沟道区域和一个高导电率区域之间。

公开(公告)号：US20060145158A1

公开(公告)日：2006-07-06

申请号：US11322235

申请日：2006-01-03

申请人： Takashi Noguchi ,  Huaxiang Yin ,  Ji-sim Jung ,  Wenxu Xianyu ,  Jang-yeon Kwon ,  Yong-han Roh ,  Suk-won Jeong ,  Seong-hoon Jeong

发明人： Takashi Noguchi ,  Huaxiang Yin ,  Ji-sim Jung ,  Wenxu Xianyu ,  Jang-yeon Kwon ,  Yong-han Roh ,  Suk-won Jeong ,  Seong-hoon Jeong

IPC分类号： H01L29/76

CPC分类号： H01L29/66757 ,  H01L29/4908

摘要： Provided is a silicon thin film transistor (TFT) including: a substrate; a silicon channel layer formed on the substrate with a source and a drain on both sides thereof; a gate insulating layer formed on the silicon channel layer; and a gate formed on the gate insulating layer, wherein the gate insulating layer has a structure including an HfOx film. The TFT has a low leakage current.

摘要翻译： 提供一种硅薄膜晶体管（TFT），包括：基板; 形成在所述基板上的硅沟道层，其两侧具有源极和漏极; 形成在硅沟道层上的栅极绝缘层; 以及形成在所述栅极绝缘层上的栅极，其中所述栅极绝缘层具有包括HfO x膜的结构。 TFT具有低漏电流。

公开(公告)号：US20050139919A1

公开(公告)日：2005-06-30

申请号：US10980838

申请日：2004-11-04

申请人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

发明人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

IPC分类号： H01L21/20 ,  H01L21/00 ,  H01L21/336 ,  H01L27/01 ,  H01L29/786

CPC分类号： H01L29/66757 ,  H01L29/78603 ,  H01L29/78606

摘要： In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.

摘要翻译： 在形成多晶硅膜的方法中，包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法，薄膜晶体管包括基板，基板上的第一导热膜， 与所述第一导热膜相邻的所述第二导热膜，所述第二导热膜的热导率低于所述第一导热膜，所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜 膜和多晶硅膜上的栅极堆叠。 第二导热膜可以在第一导热膜上，或者第一导热膜可以不连续，并且第二导热膜可以介于不连续的第一导热膜的部分之间。

公开(公告)号：US07233022B2

公开(公告)日：2007-06-19

申请号：US10980838

申请日：2004-11-04

申请人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

发明人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

IPC分类号： H01L29/10

CPC分类号： H01L29/66757 ,  H01L29/78603 ,  H01L29/78606

摘要： In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.

摘要翻译： 在形成多晶硅膜的方法中，包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法，薄膜晶体管包括基板，基板上的第一导热膜， 与所述第一导热膜相邻的所述第二导热膜，所述第二导热膜的热导率低于所述第一导热膜，所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜 膜和多晶硅膜上的栅极堆叠。 第二导热膜可以在第一导热膜上，或者第一导热膜可以不连续，并且第二导热膜可以介于不连续的第一导热膜的部分之间。

公开(公告)号：US20050263774A1

公开(公告)日：2005-12-01

申请号：US11136536

申请日：2005-05-25

申请人： Do-young Kim ,  Takashi Noguchi ,  Hans Cho ,  Jang-yeon Kwon

发明人： Do-young Kim ,  Takashi Noguchi ,  Hans Cho ,  Jang-yeon Kwon

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/84 ,  H01L29/04 ,  H01L29/786

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

摘要： Provided are a high quality poly-Si structure and a method of fabricating the same. The poly-Si structure includes a substrate, a polycrystallized silicon thin film, and an adhesive layer disposed between them. In the method of fabricating the poly-Si structure, an adhesive layer is first formed on a substrate, a-Si is deposited at a low temperature, and a polycrystallization process of silicon is, then performed by high density energy. Polycrystallization by high energy is possible, and therefore, high quality poly-Si can be achieved. The method can be employed in a low-temperature process, and a heat-sensitive material such as plastic or the like can be used as a substrate.

摘要翻译： 提供了高质量的多晶硅结构及其制造方法。 多晶硅结构包括基板，多晶硅薄膜和设置在它们之间的粘合层。 在制造多晶硅结构的方法中，首先在基板上形成粘合剂层，在低温下沉积a-Si，然后通过高密度能量进行硅的多晶化工​​艺。 通过高能量进行多晶化是可能的，因此可以实现高质量的多晶硅。 该方法可以在低温工艺中使用，并且可以使用诸如塑料等的热敏材料作为基材。

公开(公告)号：US07923316B2

公开(公告)日：2011-04-12

申请号：US11808521

申请日：2007-06-11

申请人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

发明人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

IPC分类号： H01L21/00

CPC分类号： H01L29/66757 ,  H01L29/78603 ,  H01L29/78606

摘要： In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.

摘要翻译： 在形成多晶硅膜的方法中，包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法，薄膜晶体管包括基板，基板上的第一导热膜， 与所述第一导热膜相邻的所述第二导热膜，所述第二导热膜的热导率低于所述第一导热膜，所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜 膜和多晶硅膜上的栅极堆叠。 第二导热膜可以在第一导热膜上，或者第一导热膜可以不连续，并且第二导热膜可以介于不连续的第一导热膜的部分之间。

公开(公告)号：US07479667B2

公开(公告)日：2009-01-20

申请号：US11022756

申请日：2004-12-28

申请人： Jang-yeon Kwon ,  Takashi Noguchi ,  Young-soo Park ,  Do-young Kim

发明人： Jang-yeon Kwon ,  Takashi Noguchi ,  Young-soo Park ,  Do-young Kim

IPC分类号： H01L29/76 ,  H01L29/745

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/1029 ,  H01L29/6675 ,  H01L29/78663 ,  H01L29/78672

摘要： Provided are a semiconductor device including an active area which is defined as high and low mobility areas and a thin film transistor having the semiconductor device. The mobility of the active area can be lowered to a level enough to satisfy the requirement of the semiconductor device. The lowering of the mobility of the active area can contribute to reducing mobility deviation between semiconductor devices. As a result, the quality of a flat panel display adopting a large-scale semiconductor device can be greatly improved.

摘要翻译： 提供了包括被定义为高和低迁移率区域的有源区域和具有半导体器件的薄膜晶体管的半导体器件。 有源面积的迁移率可以降低到足以满足半导体器件要求的水平。 有源区的迁移率的降低有助于减少半导体器件之间的迁移率偏差。 结果，可以大大提高采用大规模半导体器件的平板显示器的质量。

公开(公告)号：US20070259487A1

公开(公告)日：2007-11-08

申请号：US11808521

申请日：2007-06-11

申请人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

发明人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

IPC分类号： H01L21/336

CPC分类号： H01L29/66757 ,  H01L29/78603 ,  H01L29/78606

摘要： In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.

摘要翻译： 在形成多晶硅膜的方法中，包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法，薄膜晶体管包括基板，基板上的第一导热膜， 与所述第一导热膜相邻的所述第二导热膜，所述第二导热膜的热导率低于所述第一导热膜，所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜 膜和多晶硅膜上的栅极堆叠。 第二导热膜可以在第一导热膜上，或者第一导热膜可以不连续，并且第二导热膜可以介于不连续的第一导热膜的部分之间。

公开(公告)号：US20050153476A1

公开(公告)日：2005-07-14

申请号：US11033539

申请日：2005-01-12

申请人： Kyung-bae Park ,  Takashi Noguchi ,  Do-young Kim ,  Jang-yeon Kwon

发明人： Kyung-bae Park ,  Takashi Noguchi ,  Do-young Kim ,  Jang-yeon Kwon

IPC分类号： H05B33/02 ,  G09F9/30 ,  H01L21/00 ,  H01L21/8242 ,  H01L27/32 ,  H01L51/00 ,  H01L51/50 ,  H01L51/52 ,  H01L51/56 ,  H05B33/10 ,  H05B33/14 ,  H05B33/22

CPC分类号： H01L51/0097 ,  H01L27/3244 ,  H01L51/5253 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

摘要： Provided is a flexible display including a plastic substrate and a protective layer formed on the plastic substrate. Accordingly, the plastic substrate is protected from a thermal damage due to a thermal treatment, and sufficient thermal treatment for forming a polysilicon layer can be performed. Also, a polysilicon layer having a good surface and excellent prosperities can be formed due to reflection or absorption of a laser light by the protective layer. Consequently, the performance and durability of the flexible display are greatly improved.

摘要翻译： 提供了一种柔性显示器，其包括塑料基板和形成在塑料基板上的保护层。 因此，可以防止塑料基板由于热处理而导致热损伤，并且可以进行足够的用于形成多晶硅层的热处理。 此外，由于保护层的激光的反射或吸收，可以形成具有良好表面和极好繁荣度的多晶硅层。 因此，柔性显示器的性能和耐用性大大提高。