-
公开(公告)号：US08331131B2
公开(公告)日：2012-12-11
申请号：US13018040
申请日：2011-01-31
CPC分类号： G11C13/0007 , G11C11/5685 , G11C13/0069 , G11C2013/0073 , G11C2013/0092 , G11C2213/54 , G11C2213/55
摘要： A method of changing a state of a memristor having a first intermediate layer, a second intermediate layer, and a third intermediate layer positioned between a first electrode and a second electrode includes applying a first pulse having a first bias voltage across the memristor, wherein the first pulse causes mobile species to flow in a first direction within the memristor and collect in the first intermediate layer thereby causing the memristor to enter into an intermediate state and applying a second pulse having a second bias voltage across the memristor, in which the second pulse causes the mobile species from the first intermediate layer to flow in a second direction within the memristor and collect in the third intermediate layer, wherein the flow of the mobile species in the second direction causes the memristor to enter into a fully changed state.
摘要翻译： 一种改变具有位于第一电极和第二电极之间的第一中间层，第二中间层和第三中间层的忆阻器的状态的方法包括：将具有第一偏置电压的第一脉冲施加在该忆阻器两端，其中， 第一脉冲导致移动物质在忆阻器内沿第一方向流动并收集在第一中间层中，从而使忆阻器进入中间状态，并施加具有第二偏置电压的第二脉冲跨过忆阻器，其中第二脉冲 使得来自第一中间层的移动物质在忆阻器内沿第二方向流动并收集在第三中间层中，其中移动物种在第二方向上的流动使得忆阻器进入完全改变的状态。
-
12.发明授权公开(公告)号：US09276204B2
公开(公告)日：2016-03-01
申请号：US14371492
申请日：2012-02-29
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
CPC分类号： H01L45/085 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1641 , H01L45/165
摘要： A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region.
摘要翻译： 具有与含有区域的热平衡的通道区域的忆阻器。 通道区域具有可变浓度的移动离子。 由化学计量结晶材料形成的含有区域含有和与通道区域处于热平衡状态。
-
公开(公告)号：US20120313070A1
公开(公告)日：2012-12-13
申请号：US13383597
申请日：2010-01-29
CPC分类号： G11C13/0007 , G11C2213/77 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： A controlled switching memristor includes a first electrode, a second electrode, and a switching layer positioned between the first electrode and the second electrode. The switching layer includes a material to switch between an ON state and an OFF state, in which at least one of the first electrode, the second electrode, and the switching layer is to generate a permanent field within the memristor to enable a speed and an energy of switching from the ON state to the OFF state to be substantially symmetric to a speed and energy of switching from the OFF state to the ON state.
摘要翻译： 控制切换忆阻器包括位于第一电极和第二电极之间的第一电极，第二电极和开关层。 开关层包括在导通状态和断开状态之间切换的材料，其中第一电极，第二电极和开关层中的至少一个将在忆阻器内产生永久磁场，以实现速度和 从ON状态切换到OFF状态的能量与从OFF状态切换到ON状态的速度和能量基本对称。
-
公开(公告)号：US20120195099A1
公开(公告)日：2012-08-02
申请号：US13018040
申请日：2011-01-31
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C11/5685 , G11C13/0069 , G11C2013/0073 , G11C2013/0092 , G11C2213/54 , G11C2213/55
摘要： A method of changing a state of a memristor having a first intermediate layer, a second intermediate layer, and a third intermediate layer positioned between a first electrode and a second electrode includes applying a first pulse having a first bias voltage across the memristor, wherein the first pulse causes mobile species to flow in a first direction within the memristor and collect in the first intermediate layer thereby causing the memristor to enter into an intermediate state and applying a second pulse having a second bias voltage across the memristor, in which the second pulse causes the mobile species from the first intermediate layer to flow in a second direction within the memristor and collect in the third intermediate layer, wherein the flow of the mobile species in the second direction causes the memristor to enter into a fully changed state.
摘要翻译： 一种改变具有位于第一电极和第二电极之间的第一中间层，第二中间层和第三中间层的忆阻器的状态的方法包括：将具有第一偏置电压的第一脉冲施加在该忆阻器两端，其中， 第一脉冲导致移动物质在忆阻器内沿第一方向流动并收集在第一中间层中，从而使忆阻器进入中间状态，并施加具有第二偏置电压的第二脉冲跨过忆阻器，其中第二脉冲 使得来自第一中间层的移动物质在忆阻器内沿第二方向流动并收集在第三中间层中，其中移动物种在第二方向上的流动使得忆阻器进入完全改变的状态。
-
公开(公告)号：US08207520B2
公开(公告)日：2012-06-26
申请号：US12753715
申请日：2010-04-02
IPC分类号： H01L29/06
CPC分类号： H01L27/101 , H01L27/1021 , H01L27/2418 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1616
摘要： A programmable crosspoint device with an integral diode includes a first crossbar, a second crossbar, a metallic interlayer, and a switching oxide layer interposed between the first crossbar and the metallic interlayer. The switching oxide layer has a low resistance state and high resistance state. The programmable crosspoint device also includes an integral diode which is interposed between the second crossbar layer and the metallic interlayer, the integral diode being configured to limit the flow of leakage current through the programmable crosspoint device in one direction. A method for forming a programmable crosspoint device with an integrated diode is also provided.
摘要翻译： 具有整体二极管的可编程交叉点装置包括插入第一横杆和金属中间层之间的第一横杆，第二横杆，金属中间层和开关氧化物层。 开关氧化物层具有低电阻状态和高电阻状态。 可编程交叉点装置还包括插入在第二横梁层和金属中间层之间的整体二极管，整体二极管被配置为在一个方向上限制通过可编程交叉点装置的泄漏电流的流动。 还提供了一种用于形成具有集成二极管的可编程交叉点器件的方法。
-
16.发明申请公开(公告)号：US20140346426A1
公开(公告)日：2014-11-27
申请号：US14371492
申请日：2012-02-29
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
CPC分类号： H01L45/085 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1641 , H01L45/165
摘要： A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region.
摘要翻译： 具有与含有区域的热平衡的通道区域的忆阻器。 通道区域具有可变浓度的移动离子。 由化学计量结晶材料形成的含有区域含有和与通道区域处于热平衡状态。
-
公开(公告)号：US08710865B2
公开(公告)日：2014-04-29
申请号：US13281438
申请日：2011-10-26
IPC分类号： H03K19/173
CPC分类号： H03K19/177
摘要： A field-programmable analog array (FPAA) includes a digital signal routing network, an analog signal routing network, switch elements to interconnect the digital signal routing network with the analog signal routing network, and a configurable analog block (CAB) connected to the analog signal routing network and having a programmable resistor array. The switch elements are implemented via digital memristors, the programmable resistor array is implemented via analog memristors, and/or antifuses within one or more of the digital signal routing network and the analog signal routing network are implemented via digital memristors.
摘要翻译： 现场可编程模拟阵列（FPAA）包括数字信号路由网络，模拟信号路由网络，将数字信号路由网络与模拟信号路由网络互连的开关元件，以及连接到模拟信号的可配置模拟块（CAB） 信号路由网络并具有可编程电阻器阵列。 开关元件通过数字忆阻器实现，可编程电阻器阵列通过模拟忆阻器实现，并且/或数字信号路由网络和模拟信号路由网络内的反熔丝通过数字忆阻器来实现。
-
公开(公告)号：US20140112059A1
公开(公告)日：2014-04-24
申请号：US14127873
申请日：2011-06-24
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0011 , G11C2213/55 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149
摘要： A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
摘要翻译： 忆阻器具有第一电极，平行于第一电极的第二电极和设置在第一和第二电极之间的开关层。 开关层包含导电通道和储存区。 导电通道具有可变浓度的移动离子的费米玻璃材料。 储存区域相对于导电通道横向设置，并且用作导电通道的移动离子的源/汇。在开关操作中，在电场和热效应的协同驱动力下，将移动离子移入 或离开横向设置的储存区，以改变导电通道中的可移动离子的浓度，以改变费米玻璃材料的导电性。
-
公开(公告)号：US09165645B2
公开(公告)日：2015-10-20
申请号：US14127873
申请日：2011-06-24
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R Stanley Williams
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0011 , G11C2213/55 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149
摘要： A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
摘要翻译： 忆阻器具有第一电极，平行于第一电极的第二电极和设置在第一和第二电极之间的开关层。 开关层包含导电通道和储存区。 导电通道具有可变浓度的移动离子的费米玻璃材料。 储存区相对于传导通道横向设置，并且用作导电通道的移动离子的源/汇。 在切换操作中，在电场和热效应的协同驱动力下，移动离子被移入或移出横向设置的储存区，以改变导电通道中的移动离子的浓度，以改变导电通道 费米玻璃材料。
-
公开(公告)号：US20140158973A1
公开(公告)日：2014-06-12
申请号：US14236822
申请日：2011-08-03
IPC分类号： H01L45/00
CPC分类号： H01L45/1608 , H01L27/101 , H01L45/08 , H01L45/1266 , H01L45/145
摘要： A nitride-based memristor memristor includes: a first electrode comprising a first nitride material; a second electrode comprising a second nitride material; and active region positioned between the first electrode and the second electrode. The active region includes an electrically semiconducting or nominally insulating and weak ionic switching nitride phase. A method for fabricating the nitride-based memristor is also provided.
摘要翻译： 一种基于氮化物的忆阻忆阻器，包括：第一电极，包括第一氮化物材料; 包括第二氮化物材料的第二电极; 以及位于第一电极和第二电极之间的有源区。 有源区包括电半导体或标称绝缘和弱离子切换氮化物相。 还提供了一种用于制造氮化物基忆阻器的方法。
-
-
-
-
-
-
-
-
-
搜索结果
156 条记录 (耗时 0.025 秒)
