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公开(公告)号：US20120313070A1
公开(公告)日：2012-12-13
申请号：US13383597
申请日：2010-01-29
CPC分类号： G11C13/0007 , G11C2213/77 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： A controlled switching memristor includes a first electrode, a second electrode, and a switching layer positioned between the first electrode and the second electrode. The switching layer includes a material to switch between an ON state and an OFF state, in which at least one of the first electrode, the second electrode, and the switching layer is to generate a permanent field within the memristor to enable a speed and an energy of switching from the ON state to the OFF state to be substantially symmetric to a speed and energy of switching from the OFF state to the ON state.
摘要翻译： 控制切换忆阻器包括位于第一电极和第二电极之间的第一电极，第二电极和开关层。 开关层包括在导通状态和断开状态之间切换的材料，其中第一电极，第二电极和开关层中的至少一个将在忆阻器内产生永久磁场，以实现速度和 从ON状态切换到OFF状态的能量与从OFF状态切换到ON状态的速度和能量基本对称。
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公开(公告)号：US20130106462A1
公开(公告)日：2013-05-02
申请号：US13281438
申请日：2011-10-26
IPC分类号： H03K19/177
CPC分类号： H03K19/177
摘要： A field-programmable analog array (FPAA) includes a digital signal routing network, an analog signal routing network, switch elements to interconnect the digital signal routing network with the analog signal routing network, and a configurable analog block (CAB) connected to the analog signal routing network and having a programmable resistor array. The switch elements are implemented via digital memristors, the programmable resistor array is implemented via analog memristors, and/or antifuses within one or more of the digital signal routing network and the analog signal routing network are implemented via digital memristors.
摘要翻译： 现场可编程模拟阵列（FPAA）包括数字信号路由网络，模拟信号路由网络，将数字信号路由网络与模拟信号路由网络互连的开关元件，以及连接到模拟信号的可配置模拟块（CAB） 信号路由网络并具有可编程电阻器阵列。 开关元件通过数字忆阻器实现，可编程电阻器阵列通过模拟忆阻器实现，并且/或数字信号路由网络和模拟信号路由网络内的反熔丝通过数字忆阻器来实现。
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公开(公告)号：US09224821B2
公开(公告)日：2015-12-29
申请号：US14385544
申请日：2012-04-26
IPC分类号： H01L45/00 , H01L29/24 , H01L29/47 , H01L29/861 , H01L29/872 , B82Y10/00 , H01L27/102 , G11C13/00 , H01L27/24 , H01L21/02 , H01L29/8605 , H01L29/92 , H01L29/06
CPC分类号： H01L29/24 , B82Y10/00 , G11C13/0007 , G11C13/003 , G11C2213/15 , G11C2213/72 , G11C2213/73 , G11C2213/74 , H01L21/02425 , H01L21/02565 , H01L21/02631 , H01L27/1021 , H01L27/2418 , H01L27/2463 , H01L29/0676 , H01L29/247 , H01L29/47 , H01L29/8605 , H01L29/861 , H01L29/8616 , H01L29/872 , H01L29/92 , H01L45/00 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： In one example, a customizable nonlinear electrical device includes a first conductive layer, a second conductive layer, and a thin film metal-oxide layer sandwiched between the first conductive layer and the second conductive layer to form a first rectifying interface between the metal-oxide layer and the first conductive layer and a second rectifying interface between the metal-oxide layer and the second conductive layer. The metal-oxide layer includes an electrically conductive mixture of co-existing metal and metal oxides. A method forming a nonlinear electrical device is also provided.
摘要翻译： 在一个示例中，可定制的非线性电气装置包括第一导电层，第二导电层和夹在第一导电层和第二导电层之间的薄膜金属氧化物层，以在金属氧化物之间形成第一整流界面 层和第一导电层以及金属氧化物层和第二导电层之间的第二整流界面。 金属氧化物层包括共存的金属和金属氧化物的导电混合物。 还提供了形成非线性电气装置的方法。
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4.发明申请公开(公告)号：US20140346426A1
公开(公告)日：2014-11-27
申请号：US14371492
申请日：2012-02-29
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
CPC分类号： H01L45/085 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1641 , H01L45/165
摘要： A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region.
摘要翻译： 具有与含有区域的热平衡的通道区域的忆阻器。 通道区域具有可变浓度的移动离子。 由化学计量结晶材料形成的含有区域含有和与通道区域处于热平衡状态。
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公开(公告)号：US20140112059A1
公开(公告)日：2014-04-24
申请号：US14127873
申请日：2011-06-24
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0011 , G11C2213/55 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149
摘要： A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
摘要翻译： 忆阻器具有第一电极，平行于第一电极的第二电极和设置在第一和第二电极之间的开关层。 开关层包含导电通道和储存区。 导电通道具有可变浓度的移动离子的费米玻璃材料。 储存区域相对于导电通道横向设置，并且用作导电通道的移动离子的源/汇。在开关操作中，在电场和热效应的协同驱动力下，将移动离子移入 或离开横向设置的储存区，以改变导电通道中的可移动离子的浓度，以改变费米玻璃材料的导电性。
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公开(公告)号：US20130242637A1
公开(公告)日：2013-09-19
申请号：US13424034
申请日：2012-03-19
申请人： Jianhua Yang , Byungjoon Choi , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Jianhua Yang , Byungjoon Choi , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
CPC分类号： G11C13/0002 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/0073 , G11C2213/15 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/149
摘要： A memelectronic device may have a first and a second electrode spaced apart by a plurality of materials. A first material may have a memory characteristic exhibited by the first material maintaining a magnitude of an electrically controlled physical property after discontinuing an electrical stimulus on the first material. A second material may have an auxiliary characteristic.
摘要翻译： 电子器件可以具有由多个材料隔开的第一和第二电极。 第一材料可以具有在第一材料上停止电刺激之后第一材料表现出的存储特性，其维持电控物理性质的大小。 第二种材料可能具有辅助特性。
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公开(公告)号：US20150041751A1
公开(公告)日：2015-02-12
申请号：US14385544
申请日：2012-04-26
IPC分类号： H01L29/24 , H01L21/02 , H01L29/861 , H01L45/00 , H01L29/8605 , H01L29/92
CPC分类号： H01L29/24 , B82Y10/00 , G11C13/0007 , G11C13/003 , G11C2213/15 , G11C2213/72 , G11C2213/73 , G11C2213/74 , H01L21/02425 , H01L21/02565 , H01L21/02631 , H01L27/1021 , H01L27/2418 , H01L27/2463 , H01L29/0676 , H01L29/247 , H01L29/47 , H01L29/8605 , H01L29/861 , H01L29/8616 , H01L29/872 , H01L29/92 , H01L45/00 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： In one example, a customizable nonlinear electrical device includes a first conductive layer, a second conductive layer, and a thin film metal-oxide layer sandwiched between the first conductive layer and the second conductive layer to form a first rectifying interface between the metal-oxide layer and the first conductive layer and a second rectifying interface between the metal-oxide layer and the second conductive layer. The metal-oxide layer includes an electrically conductive mixture of co-existing metal and metal oxides. A method forming a nonlinear electrical device is also provided.
摘要翻译： 在一个示例中，可定制的非线性电气装置包括第一导电层，第二导电层和夹在第一导电层和第二导电层之间的薄膜金属氧化物层，以在金属氧化物之间形成第一整流界面 层和第一导电层以及金属氧化物层和第二导电层之间的第二整流界面。 金属氧化物层包括共存的金属和金属氧化物的导电混合物。 还提供了形成非线性电气装置的方法。
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公开(公告)号：US20140027705A1
公开(公告)日：2014-01-30
申请号：US13560935
申请日：2012-07-27
CPC分类号： H01L45/04 , H01L27/2463 , H01L45/1233 , H01L45/1293 , H01L45/1675
摘要： A memristor array includes a lower layer of crossbars, upper layer of crossbars intersecting the lower layer of crossbars, memristor cells interposed between intersecting crossbars, and pores separating adjacent memristor cells. A method forming a memristor array is also provided.
摘要翻译： 忆阻器阵列包括下层交叉梁，与下部交叉梁交叉的上层交叉杆，夹在相交的横梁之间的忆阻单元以及分隔相邻的忆阻单元的孔。 还提供了一种形成忆阻器阵列的方法。
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公开(公告)号：US08331131B2
公开(公告)日：2012-12-11
申请号：US13018040
申请日：2011-01-31
CPC分类号： G11C13/0007 , G11C11/5685 , G11C13/0069 , G11C2013/0073 , G11C2013/0092 , G11C2213/54 , G11C2213/55
摘要： A method of changing a state of a memristor having a first intermediate layer, a second intermediate layer, and a third intermediate layer positioned between a first electrode and a second electrode includes applying a first pulse having a first bias voltage across the memristor, wherein the first pulse causes mobile species to flow in a first direction within the memristor and collect in the first intermediate layer thereby causing the memristor to enter into an intermediate state and applying a second pulse having a second bias voltage across the memristor, in which the second pulse causes the mobile species from the first intermediate layer to flow in a second direction within the memristor and collect in the third intermediate layer, wherein the flow of the mobile species in the second direction causes the memristor to enter into a fully changed state.
摘要翻译： 一种改变具有位于第一电极和第二电极之间的第一中间层，第二中间层和第三中间层的忆阻器的状态的方法包括：将具有第一偏置电压的第一脉冲施加在该忆阻器两端，其中， 第一脉冲导致移动物质在忆阻器内沿第一方向流动并收集在第一中间层中，从而使忆阻器进入中间状态，并施加具有第二偏置电压的第二脉冲跨过忆阻器，其中第二脉冲 使得来自第一中间层的移动物质在忆阻器内沿第二方向流动并收集在第三中间层中，其中移动物种在第二方向上的流动使得忆阻器进入完全改变的状态。
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10.发明授权公开(公告)号：US09276204B2
公开(公告)日：2016-03-01
申请号：US14371492
申请日：2012-02-29
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
CPC分类号： H01L45/085 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1641 , H01L45/165
摘要： A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region.
摘要翻译： 具有与含有区域的热平衡的通道区域的忆阻器。 通道区域具有可变浓度的移动离子。 由化学计量结晶材料形成的含有区域含有和与通道区域处于热平衡状态。
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