公开(公告)号：US08629471B2

公开(公告)日：2014-01-14

申请号：US13187010

申请日：2011-07-20

Applicant: Jong Kyu Kim ,  So Ra Lee ,  Ho Jun Suk ,  Jin Cheol Shin

Inventor： Jong Kyu Kim ,  So Ra Lee ,  Ho Jun Suk ,  Jin Cheol Shin

IPC: H01L33/00

CPC classification number: H01L33/08 ,  H01L27/156 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Exemplary embodiments of the present invention relate to light emitting diodes including a plurality of light emitting cells on a substrate to be suitable for AC driving. The light emitting diode includes a substrate and a plurality of light emitting cell formed on the substrate. Each light emitting cell includes a first region at a boundary of the light emitting cell and a second region opposite to the first region. A first electrode pad is formed in the first region of the light emitting cell. A second electrode pad having a linear shape is disposed to face the first electrode pad while regionally defining a peripheral region together with the boundary of the second region. A wire connects the first electrode pad to the second electrode pad between two adjacent light emitting cells.

Abstract translation: 本发明的示例性实施例涉及包括适于AC驱动的衬底上的多个发光单元的发光二极管。 发光二极管包括基板和形成在基板上的多个发光单元。 每个发光单元包括在发光单元的边界处的第一区域和与第一区域相对的第二区域。 第一电极焊盘形成在发光单元的第一区域中。 具有直线形状的第二电极焊盘设置成面对第一电极焊盘，同时区域地限定与第二区域的边界一起的周边区域。 导线将第一电极焊盘连接到两个相邻的发光单元之间的第二电极焊盘。

公开(公告)号：US20120080695A1

公开(公告)日：2012-04-05

申请号：US13080116

申请日：2011-04-05

Applicant: Sum Geun Lee ,  Jin Cheol Shin ,  Jong Kyu Kim ,  Chang Youn Kim

Inventor： Sum Geun Lee ,  Jin Cheol Shin ,  Jong Kyu Kim ,  Chang Youn Kim

IPC: H01L33/60

CPC classification number: H01L33/60 ,  H01L27/156 ,  H01L33/08 ,  H01L33/38 ,  H01L33/46

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors.

Abstract translation: 本发明的示例性实施例公开了一种发光二极管（LED）及其制造方法。 LED包括衬底，布置在衬底上的半导体堆叠，所述半导体堆叠包括具有第一导电类型的上半导体层，有源层和具有第二导电类型的下半导体层，将半导体堆叠分离成的隔离沟槽 多个区域，设置在所述基板和所述半导体堆叠之间的连接器，所述连接器将所述多个区域彼此电连接，以及具有多层结构的分布式布拉格反射器（DBR），所述DBR布置在所述半导体堆叠和 连接器。 连接器通过DBR电连接到半导体堆叠，并且DBR的部分设置在隔离沟槽和连接器之间。

公开(公告)号：US08383433B2

公开(公告)日：2013-02-26

申请号：US13080116

申请日：2011-04-05

Applicant: Sum Geun Lee ,  Jin Cheol Shin ,  Jong Kyu Kim ,  Chang Youn Kim

Inventor： Sum Geun Lee ,  Jin Cheol Shin ,  Jong Kyu Kim ,  Chang Youn Kim

IPC: H01L21/00 ,  H01L33/00

CPC classification number: H01L33/60 ,  H01L27/156 ,  H01L33/08 ,  H01L33/38 ,  H01L33/46

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors.

Abstract translation: 本发明的示例性实施例公开了一种发光二极管（LED）及其制造方法。 LED包括衬底，布置在衬底上的半导体堆叠，所述半导体堆叠包括具有第一导电类型的上半导体层，有源层和具有第二导电类型的下半导体层，将半导体堆叠分离成的隔离沟槽 多个区域，设置在所述基板和所述半导体堆叠之间的连接器，所述连接器将所述多个区域彼此电连接，以及具有多层结构的分布式布拉格反射器（DBR），所述DBR布置在所述半导体堆叠和 连接器。 连接器通过DBR电连接到半导体堆叠，并且DBR的部分设置在隔离沟槽和连接器之间。

公开(公告)号：US08314440B2

公开(公告)日：2012-11-20

申请号：US13073522

申请日：2011-03-28

Applicant: Min Chan Heo ,  Sang Ki Jin ,  Jong Kyu Kim ,  Jin Cheol Shin ,  So Ra Lee ,  Sum Geun Lee

Inventor： Min Chan Heo ,  Sang Ki Jin ,  Jong Kyu Kim ,  Jin Cheol Shin ,  So Ra Lee ,  Sum Geun Lee

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/46 ,  H01L33/08 ,  H01L33/20 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2933/0025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Exemplary embodiments of the present invention provide light emitting diode (LED) chips and a method of fabricating the same. An LED chip according to an exemplary embodiment includes a substrate; a light emitting structure arranged on the substrate, and an alternating lamination bottom structure arranged under the substrate. The alternating lamination bottom structure includes a plurality of dielectric pairs, each of the dielectric pairs including a first material layer having a first refractive index and a second material layer having a second refractive index, the first refractive index being greater than the second refractive index.

Abstract translation: 本发明的示例性实施例提供了发光二极管（LED）芯片及其制造方法。 根据示例性实施例的LED芯片包括基板; 布置在基板上的发光结构，以及布置在基板下方的交替叠层底部结构。 所述交替叠层底部结构包括多个电介质对，所述电介质对中的每一个包括具有第一折射率的第一材料层和具有第二折射率的第二材料层，所述第一折射率大于所述第二折射率。

公开(公告)号：US20110284884A1

公开(公告)日：2011-11-24

申请号：US13146073

申请日：2010-02-12

Applicant: Chung Hoon Lee ,  Won Cheol Seo ,  Yeo Jin Yoon ,  Jin Cheol Shin

Inventor： Chung Hoon Lee ,  Won Cheol Seo ,  Yeo Jin Yoon ,  Jin Cheol Shin

IPC: H01L33/62 ,  H01L33/50

CPC classification number: H01L27/153 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H05B33/0821 ,  H01L2924/00014

Abstract: A light emitting diode (LED) chip for high voltage operation and an LED package including the same arc disclosed. The LED chip includes a substrate, a first array formed on the substrate and including n light emitting cells connected in series, and a second array formed on the substrate and including m (m≦n) light emitting cells connected in series. During operation of the LED chip, the first array and the second array are operated by being connected in reverse parallel to each other. Further, when a driving voltage of the first array is delined as Vd1 and a driving voltage of the second array is defined as Vd2, a difference between Vd1 and Vd2×(n/m) is not more than 2V.

Abstract translation: 一种用于高电压操作的发光二极管（LED）芯片和包含相同电弧的LED封装。 LED芯片包括基板，形成在基板上并包括串联连接的n个发光单元的第一阵列和形成在基板上的第二阵列，并且包括串联连接的m（m和n个; n）个发光单元。 在LED芯片的操作期间，第一阵列和第二阵列通过彼此反向并联连接来操作。 此外，当第一阵列的驱动电压被定义为Vd1并且第二阵列的驱动电压被定义为Vd2时，Vd1和Vd2×（n / m）之间的差不大于2V。