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    Semiconductor devices having different gate dielectrics and methods for manufacturing the same
    12.
    发明授权
    Semiconductor devices having different gate dielectrics and methods for manufacturing the same 有权
    具有不同栅极电介质的半导体器件及其制造方法

    公开(公告)号：US07586159B2

    公开(公告)日：2009-09-08

    申请号：US11723705

    申请日：2007-03-21

    Applicant: Jong-Ho Lee ,  Ho-Kyu Kang ,  Yun-Seok Kim ,  Seok-Joo Doh ,  Hyung-Suk Jung

    Inventor： Jong-Ho Lee ,  Ho-Kyu Kang ,  Yun-Seok Kim ,  Seok-Joo Doh ,  Hyung-Suk Jung

    IPC: H01L29/94

    CPC classification number: H01L21/823857 ,  H01L27/0922

    Abstract: A semiconductor device includes first and second transistor devices. The first device includes a first substrate region, a first gate electrode, and a first gate dielectric. The first gate dielectric is located between the first substrate region and the first gate electrode. The second device includes a second substrate region, a second gate electrode, and a second gate dielectric. The second gate dielectric is located between the second substrate region and the second gate electrode. The first gate dielectric includes a first high-k layer having a dielectric constant of 8 or more. Likewise, the second gate dielectric includes a second high-k layer having a dielectric constant of 8 or more. The second high-k layer has a different material composition than the first high-k layer.

    Abstract translation: 半导体器件包括第一和第二晶体管器件。 第一器件包括第一衬底区域，第一栅极电极和第一栅极电介质。 第一栅极电介质位于第一衬底区域和第一栅电极之间。 第二器件包括第二衬底区域，第二栅极电极和第二栅极电介质。 第二栅极电介质位于第二基板区域和第二栅极电极之间。 第一栅极电介质包括介电常数为8以上的第一高k层。 类似地，第二栅极电介质包括介电常数为8或更大的第二高k层。 第二高k层具有与第一高k层不同的材料组成。

    Composite comprising polysaccharide-functionalized nanoparticle and hydrogel matrix, a drug delivery system and a bone defect replacement matrix for sustained release comprising the same, and the preparation method thereof
    14.
    发明申请
    Composite comprising polysaccharide-functionalized nanoparticle and hydrogel matrix, a drug delivery system and a bone defect replacement matrix for sustained release comprising the same, and the preparation method thereof 审中-公开
    包含多糖功能化纳米颗粒和水凝胶基质的复合物，用于持续释放的药物递送系统和骨缺损替代基质及其制备方法

    公开(公告)号：US20070248675A1

    公开(公告)日：2007-10-25

    申请号：US11783339

    申请日：2007-04-09

    Applicant: Gi Tae ,  Yong-Il Chung ,  Jong-Ho Lee ,  Yong Park

    Inventor： Gi Tae ,  Yong-Il Chung ,  Jong-Ho Lee ,  Yong Park

    IPC: A61K9/00 ,  A61K38/16

    CPC classification number: A61K9/5153 ,  A61K9/1641 ,  A61K9/1647 ,  A61K9/5192 ,  A61K38/1875

    Abstract: The present invention relates to a nanoparticle-protein-hydrogel composite comprising (1) a polysaccharide-functionalized nanoparticle comprising a core composed of a biodegradable polymer, a hydrogel surface layer composed of a biocompatible polymer emulsifier, and a polysaccharide physically bound to the core and/or the hydrogel layer; (2) a protein forming a specific binding with the polysaccharide; and (3) a hydrogel matrix composed of a biocompatible polymer as a matrix for the nanoparticle. The present also relates to a drug delivery system and a bone defect replacement matrix comprising the composite for sustained release, and the preparation method thereof. Further, the present invention also provides a method for controlling the release rate of a protein drug by changing the content of the polysaccharide in a unit mass of the nanoparticle and/or by changing the content of the nanoparticle in a unit mass of the composite.

    Abstract translation: 本发明涉及一种纳米粒子 - 蛋白质 - 水凝胶复合体，其包含（1）包含由可生物降解的聚合物构成的核心的多糖官能化纳米粒子，由生物相容性聚合物乳化剂构成的水凝胶表面层和物理结合到核心上的多糖，以及 /或水凝胶层; （2）与多糖形成特异性结合的蛋白质; 和（3）由作为纳米粒子的基质的生物相容性聚合物构成的水凝胶基质。 本发明还涉及包含用于缓释的复合物的药物递送系统和骨缺损替换基质及其制备方法。 此外，本发明还提供了通过改变纳米颗粒的单位质量中的多糖的含量和/或通过改变复合材料的单位质量中的纳米颗粒的含量来控制蛋白质药物的释放速率的方法。

    Semiconductor devices having different gate dielectrics and methods for manufacturing the same
    15.
    发明申请
    Semiconductor devices having different gate dielectrics and methods for manufacturing the same 有权
    具有不同栅极电介质的半导体器件及其制造方法

    公开(公告)号：US20070176242A1

    公开(公告)日：2007-08-02

    申请号：US11723705

    申请日：2007-03-21

    Applicant: Jong-Ho Lee ,  Ho-Kyu Kang ,  Yun-Seok Kim ,  Seok-Joo Doh ,  Hyung-Suk Jung

    Inventor： Jong-Ho Lee ,  Ho-Kyu Kang ,  Yun-Seok Kim ,  Seok-Joo Doh ,  Hyung-Suk Jung

    IPC: H01L29/94

    CPC classification number: H01L21/823857 ,  H01L27/0922

    Abstract: A semiconductor device includes first and second transistor devices. The first device includes a first substrate region, a first gate electrode, and a first gate dielectric. The first gate dielectric is located between the first substrate region and the first gate electrode. The second device includes a second substrate region, a second gate electrode, and a second gate dielectric. The second gate dielectric is located between the second substrate region and the second gate electrode. The first gate dielectric includes a first high-k layer having a dielectric constant of 8 or more. Likewise, the second gate dielectric includes a second high-k layer having a dielectric constant of 8 or more. The second high-k layer has a different material composition than the first high-k layer.

    Abstract translation: 半导体器件包括第一和第二晶体管器件。 第一器件包括第一衬底区域，第一栅极电极和第一栅极电介质。 第一栅极电介质位于第一衬底区域和第一栅电极之间。 第二器件包括第二衬底区域，第二栅极电极和第二栅极电介质。 第二栅极电介质位于第二基板区域和第二栅极电极之间。 第一栅极电介质包括介电常数为8以上的第一高k层。 类似地，第二栅极电介质包括介电常数为8或更大的第二高k层。 第二高k层具有与第一高k层不同的材料组成。

    Surface-mounted thermistor and manufacturing method thereof
    17.
    发明申请
    Surface-mounted thermistor and manufacturing method thereof 审中-公开
    表面贴装热敏电阻及其制造方法

    公开(公告)号：US20070103269A1

    公开(公告)日：2007-05-10

    申请号：US11642771

    申请日：2006-12-19

    Applicant: Jun-Ku Han ,  Su-An Choi ,  Chang-Mo Ko ,  An-Na Lee ,  Jong-Hwan Lee ,  Ju-Dam Kim ,  Jong-Ho Lee ,  Dong-Hyun Kim

    Inventor： Jun-Ku Han ,  Su-An Choi ,  Chang-Mo Ko ,  An-Na Lee ,  Jong-Hwan Lee ,  Ju-Dam Kim ,  Jong-Ho Lee ,  Dong-Hyun Kim

    IPC: H01C7/13 ,  H01C7/10

    CPC classification number: H05K3/3442 ,  H01C1/148 ,  H01C7/008 ,  H05K2201/09181 ,  H05K2201/09381 ,  H05K2201/10636 ,  Y02P70/611 ,  Y02P70/613

    Abstract: A thermistor, which is to be mounted on a PCB, for protecting other circuit elements is disclosed. Electrode patterns separately formed on both surfaces of a film resistance element are respectively shaped into two parts which are engaged to each other with a non-conductive gap interposed therebetween. Thus, a Tombstone phenomenon caused by asymmetric structure may be fundamentally prevented. Grooves are formed in both sides of the thermistor, and connection portions for electrically connecting the electrodes formed on both surfaces of the thermistor are formed through the inside of the grooves or through the sides except the grooves. Thus, though a crack arises in the connection portion, it is possible to prevent the crack from being propagated to the entire connection portion along the side of the thermistor.

    Abstract translation: 公开了一种要安装在PCB上的热敏电阻，用于保护其他电路元件。 分别形成在膜电阻元件的两个表面上的电极图案分别成形为彼此接合的两个部分，其间插入非导电间隙。 因此，可以从根本上防止由不对称结构引起的墓碑现象。 在热敏电阻的两侧形成槽，并且通过槽的内部或通过除了凹槽之外的侧面形成用于电连接形成在热敏电阻的两个表面上的电极的连接部。 因此，尽管在连接部分发生裂缝，但是可以防止裂纹沿着热敏电阻的一侧传播到整个连接部分。

    METHODS OF FABRICATING VERTICAL CHANNEL FIELD EFFECT TRANSISTORS HAVING INSULATING LAYERS THEREON
    18.
    发明申请
    METHODS OF FABRICATING VERTICAL CHANNEL FIELD EFFECT TRANSISTORS HAVING INSULATING LAYERS THEREON 有权
    制造具有绝缘层的垂直通道场效应晶体管的方法

    公开(公告)号：US20070066018A1

    公开(公告)日：2007-03-22

    申请号：US11556804

    申请日：2006-11-06

    Applicant: Tai-Su Park ,  Eui-Joon Yoon ,  U-In Chung ,  Si-Young Choi ,  Jong-Ho Lee

    Inventor： Tai-Su Park ,  Eui-Joon Yoon ,  U-In Chung ,  Si-Young Choi ,  Jong-Ho Lee

    IPC: H01L21/336

    CPC classification number: H01L29/7851 ,  H01L29/66795 ,  H01L29/7854

    Abstract: A method of forming a field effect transistor includes forming a vertical channel protruding from a substrate including a source/drain region junction between the vertical channel and the substrate, and forming an insulating layer extending on a side wall of the vertical channel toward the substrate to beyond the source/drain region junction. The method may also include forming a nitride layer extending on the side wall away from the substrate to beyond the insulating layer, forming a second insulating layer extending on the side wall that is separated from the channel by the nitride layer, and forming a gate electrode extending on the side wall toward the substrate to beyond the source/drain region junction.

    Abstract translation: 形成场效应晶体管的方法包括形成从包括垂直沟道和衬底之间的源极/漏极区域的衬底突出的垂直沟道，并且形成在垂直沟道的侧壁上朝向衬底延伸的绝缘层， 超出源/漏区结。 该方法还可以包括在侧壁上形成远离衬底延伸到绝缘层的氮化物层，形成在侧壁上延伸的第二绝缘层，所述第二绝缘层通过氮化物层从沟道分离，并形成栅电极 在侧壁上朝向衬底延伸超过源/漏区结。

    Thermistor having improved lead structure and secondary battery having the thermistor
    19.
    发明授权
    Thermistor having improved lead structure and secondary battery having the thermistor 失效
    具有改进的引线结构的热敏电阻和具有该热敏电阻的二次电池

    公开(公告)号：US07173512B2

    公开(公告)日：2007-02-06

    申请号：US10888309

    申请日：2004-07-09

    Applicant: Chang-Mo Ko ,  Su-An Choi ,  Jun-Ku Han ,  An-Na Lee ,  Jong-Hwan Lee ,  Ju-Dam Kim ,  Jong-Ho Lee ,  Jong-Seo Yoon

    Inventor： Chang-Mo Ko ,  Su-An Choi ,  Jun-Ku Han ,  An-Na Lee ,  Jong-Hwan Lee ,  Ju-Dam Kim ,  Jong-Ho Lee ,  Jong-Seo Yoon

    IPC: H01C7/10

    CPC classification number: H01C7/008 ,  H01C1/144

    Abstract: A thermistor of which resistance is changed depending on temperature and a secondary battery to which the thermistor is attached are disclosed. The thermistor is attached to an object via a lead which is made of different kinds of materials. The lead is configured so that a part of the lead to be united to the thermistor electrode is mainly made of the same material as the electrode and a part of the lead to be united to the object is mainly made of the same material as the surface of the object. Thus, the thermistor may be simply attached to the object only using the ultrasonic welding, thereby remarkably reducing junction inferiorities.

    Abstract translation: 公开了根据温度改变电阻的热敏电阻和附接有热敏电阻的二次电池。 热敏电阻通过由不同种类的材料制成的引线附着到物体上。 引线被配置为使得与热敏电阻电极相结合的引线的一部分主要由与电极相同的材料制成，并且与物体结合的引线的一部分主要由与表面相同的材料制成 的对象。 因此，热敏电阻可以仅使用超声波焊接简单地附接到物体，从而显着地减少了接合性。

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