公开(公告)号：US20070066018A1

公开(公告)日：2007-03-22

申请号：US11556804

申请日：2006-11-06

申请人： Tai-Su Park ,  Eui-Joon Yoon ,  U-In Chung ,  Si-Young Choi ,  Jong-Ho Lee

发明人： Tai-Su Park ,  Eui-Joon Yoon ,  U-In Chung ,  Si-Young Choi ,  Jong-Ho Lee

IPC分类号： H01L21/336

CPC分类号： H01L29/7851 ,  H01L29/66795 ,  H01L29/7854

摘要： A method of forming a field effect transistor includes forming a vertical channel protruding from a substrate including a source/drain region junction between the vertical channel and the substrate, and forming an insulating layer extending on a side wall of the vertical channel toward the substrate to beyond the source/drain region junction. The method may also include forming a nitride layer extending on the side wall away from the substrate to beyond the insulating layer, forming a second insulating layer extending on the side wall that is separated from the channel by the nitride layer, and forming a gate electrode extending on the side wall toward the substrate to beyond the source/drain region junction.

摘要翻译： 形成场效应晶体管的方法包括形成从包括垂直沟道和衬底之间的源极/漏极区域的衬底突出的垂直沟道，并且形成在垂直沟道的侧壁上朝向衬底延伸的绝缘层， 超出源/漏区结。 该方法还可以包括在侧壁上形成远离衬底延伸到绝缘层的氮化物层，形成在侧壁上延伸的第二绝缘层，所述第二绝缘层通过氮化物层从沟道分离，并形成栅电极 在侧壁上朝向衬底延伸超过源/漏区结。

公开(公告)号：US20050145932A1

公开(公告)日：2005-07-07

申请号：US10780067

申请日：2004-02-17

申请人： Tai-su Park ,  Eui-Joon Yoon ,  U-In Chung ,  Si-Young Choi ,  Jong-Ho Lee

发明人： Tai-su Park ,  Eui-Joon Yoon ,  U-In Chung ,  Si-Young Choi ,  Jong-Ho Lee

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L29/786 ,  H01L29/10

CPC分类号： H01L29/7851 ,  H01L29/66795 ,  H01L29/7854

摘要： A field effect transistor can include a vertical channel protruding from a substrate including a source/drain region junction between the vertical channel and the substrate, and an insulating layer extending on a side wall of the vertical channel toward the substrate to beyond the source/drain region junction. The transistor can also include a nitride layer extending on the side wall away from the substrate to beyond the insulating layer, a second insulating layer extending on the side wall that is separated from the channel by the nitride layer, and a gate electrode extending on the side wall toward the substrate to beyond the source/drain region junction. Related methods are also disclosed.

摘要翻译： 场效应晶体管可以包括从包括垂直沟道和衬底之间的源极/漏极区域的衬底突出的垂直沟道，以及在垂直沟道的侧壁上朝衬底延伸超过源/漏极的绝缘层 区域交界处 晶体管还可以包括在离开衬底的侧壁上延伸超过绝缘层的氮化物层，在侧壁上延伸的第二绝缘层，其通过氮化物层与沟道分离，以及栅电极 侧壁朝向衬底以超出源/漏区结。 还公开了相关方法。

公开(公告)号：US07459359B2

公开(公告)日：2008-12-02

申请号：US11556804

申请日：2006-11-06

申请人： Tai-Su Park ,  Eui-Joon Yoon ,  U-In Chung ,  Si-Young Choi ,  Jong-Ho Lee

发明人： Tai-Su Park ,  Eui-Joon Yoon ,  U-In Chung ,  Si-Young Choi ,  Jong-Ho Lee

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L29/7851 ,  H01L29/66795 ,  H01L29/7854

摘要： A method of forming a field effect transistor includes forming a vertical channel protruding from a substrate including a source/drain region junction between the vertical channel and the substrate, and forming an insulating layer extending on a side wall of the vertical channel toward the substrate to beyond the source/drain region junction. The method may also include forming a nitride layer extending on the side wall away from the substrate to beyond the insulating layer, forming a second insulating layer extending on the side wall that is separated from the channel by the nitride layer, and forming a gate electrode extending on the side wall toward the substrate to beyond the source/drain region junction.

摘要翻译： 形成场效应晶体管的方法包括形成从包括垂直沟道和衬底之间的源极/漏极区域的衬底突出的垂直沟道，并且形成在垂直沟道的侧壁上朝向衬底延伸的绝缘层， 超出源/漏区结。 该方法还可以包括在侧壁上形成远离衬底延伸到绝缘层的氮化物层，形成在侧壁上延伸的第二绝缘层，所述第二绝缘层通过氮化物层从沟道分离，并形成栅电极 在侧壁上朝向衬底延伸超过源/漏区结。

公开(公告)号：US07148541B2

公开(公告)日：2006-12-12

申请号：US10780067

申请日：2004-02-17

申请人： Tai-su Park ,  Eui-Joon Yoon ,  U-In Chung ,  Si-Young Choi ,  Jong-Ho Lee

发明人： Tai-su Park ,  Eui-Joon Yoon ,  U-In Chung ,  Si-Young Choi ,  Jong-Ho Lee

IPC分类号： H01L27/01

CPC分类号： H01L29/7851 ,  H01L29/66795 ,  H01L29/7854

摘要： A field effect transistor can include a vertical channel protruding from a substrate including a source/drain region junction between the vertical channel and the substrate, and an insulating layer extending on a side wall of the vertical channel toward the substrate to beyond the source/drain region junction. The transistor can also include a nitride layer extending on the side wall away from the substrate to beyond the insulating layer, a second insulating layer extending on the side wall that is separated from the channel by the nitride layer, and a gate electrode extending on the side wall toward the substrate to beyond the source/drain region junction. Related methods are also disclosed.

摘要翻译： 场效应晶体管可以包括从包括垂直沟道和衬底之间的源极/漏极区域的衬底突出的垂直沟道，以及在垂直沟道的侧壁上朝向衬底延伸到源极/漏极 区域交界处 晶体管还可以包括在离开衬底的侧壁上延伸超过绝缘层的氮化物层，在侧壁上延伸的第二绝缘层，其通过氮化物层与沟道分离，以及栅电极 侧壁朝向衬底以超出源/漏区结。 还公开了相关方法。

公开(公告)号：US11138898B2

公开(公告)日：2021-10-05

申请号：US16342248

申请日：2017-10-13

申请人： Jong-Ho Lee

发明人： Jong-Ho Lee

IPC分类号： G09B7/08 ,  G09B7/073 ,  G06F16/33 ,  G06Q50/20 ,  G09B7/06 ,  G09B7/02 ,  G06F9/44

摘要： Disclosed are a device and method for providing a checking question designed to allow a user to perform the checking study of correct answers or incorrect answers by using the choices of one or more incorrectly answered questions. The device includes: an incorrectly answered question selection unit which selects one or more questions incorrectly answered by a user from among questions provided to the user; a choice extraction unit which extracts correct answers as choices for the respective selected incorrectly answered questions; a checking question generation unit which generates one or more checking questions designed to allow the user to study the incorrectly answered questions by allocating the extracted choices so that the extracted choices become the choices of the checking questions; and a checking study provision unit which provides the study of the incorrectly answered questions by transmitting the generated checking questions to a user terminal.

公开(公告)号：US09553094B2

公开(公告)日：2017-01-24

申请号：US15069920

申请日：2016-03-14

申请人： Wei-Hsiung Tseng ,  Ju-Youn Kim ,  Seok-Jun Won ,  Jong-Ho Lee ,  Hye-Lan Lee ,  Yong-Ho Ha

发明人： Wei-Hsiung Tseng ,  Ju-Youn Kim ,  Seok-Jun Won ,  Jong-Ho Lee ,  Hye-Lan Lee ,  Yong-Ho Ha

IPC分类号： H01L27/092 ,  H01L29/49 ,  H01L29/43

CPC分类号： H01L27/0924 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823864 ,  H01L21/845 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/435 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6681 ,  H01L29/7848

摘要： Provided is a method for fabricating a semiconductor device. The method includes forming an interlayer insulating layer on a substrate, the interlayer insulating layer including a first trench; forming a high-k dielectric layer in the first trench; successively forming a diffusion layer and a blocking layer on the high-k dielectric layer; subsequently performing annealing; after the annealing, successively removing the blocking layer and the diffusion layer; forming a first barrier layer on the high-k dielectric layer; successively forming a work function adjustment layer and a gate conductor on the first barrier layer; and forming a capping layer on the gate conductor.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括在衬底上形成层间绝缘层，所述层间绝缘层包括第一沟槽; 在第一沟槽中形成高k电介质层; 在高k电介质层上依次形成扩散层和阻挡层; 随后进行退火; 退火后，依次去除阻挡层和扩散层; 在高k电介质层上形成第一阻挡层; 在第一阻挡层上依次形成功函数调整层和栅极导体; 并在栅极导体上形成覆盖层。

公开(公告)号：US09076504B2

公开(公告)日：2015-07-07

申请号：US13661773

申请日：2012-10-26

申请人： Jong-Ho Lee ,  Kyu-Chang Kang ,  Hyo-Chang Kim ,  Jae-Youn Youn ,  Sang-Jae Rhee

发明人： Jong-Ho Lee ,  Kyu-Chang Kang ,  Hyo-Chang Kim ,  Jae-Youn Youn ,  Sang-Jae Rhee

IPC分类号： G11C7/08 ,  G11C11/406 ,  G11C11/4091

CPC分类号： G11C7/08 ,  G11C11/40626 ,  G11C11/4091 ,  G11C2211/4065 ,  G11C2211/4068

摘要： A semiconductor memory device and a self-refresh method of the semiconductor memory device. The semiconductor memory device includes: a memory cell array including one or more memory cells; a sense amplifier connected to a sensing line and a complementary sensing line and sensing/amplifying data stored in the one or more memory cells; and a sense amplifier control circuit sequentially supplying a first voltage and a second voltage having different levels to the sense amplifier through the sensing line during a refresh operation.

摘要翻译： 半导体存储器件和半导体存储器件的自刷新方法。 半导体存储器件包括：包括一个或多个存储单元的存储单元阵列; 连接到感测线和互补感测线的感测放大器，以及感测/放大存储在所述一个或多个存储器单元中的数据; 以及读出放大器控制电路，其在刷新操作期间通过感测线路顺序地将具有不同电平的第一电压和第二电压提供给读出放大器。

公开(公告)号：US08385446B2

公开(公告)日：2013-02-26

申请号：US12384156

申请日：2009-04-01

申请人： Jong-Ho Lee ,  Joo-Hyun Lee ,  Sung-Hwan Kim ,  Jong-Hyeuk Lee ,  Sung-Yoon Jung ,  Chungyong Lee ,  Jaesang Ham ,  Myoung-Seok Kim

发明人： Jong-Ho Lee ,  Joo-Hyun Lee ,  Sung-Hwan Kim ,  Jong-Hyeuk Lee ,  Sung-Yoon Jung ,  Chungyong Lee ,  Jaesang Ham ,  Myoung-Seok Kim

IPC分类号： H04L5/12

CPC分类号： H04L27/2614 ,  H04L5/0007 ,  H04L25/0202 ,  H04L25/03178 ,  H04L25/0321 ,  H04L25/03229

摘要： A receiving apparatus and method of a Maximum Likelihood (ML) scheme in a Single-Carrier (SC) system are provided. The apparatus includes at least two antennas, at least two Orthogonal Frequency Division Multiplexing (OFDM) demodulators, at least two subcarrier mappers, at least two OFDM modulators, and a detector. The antennas receive signals. The OFDM demodulators convert the signals into frequency domain signals. The subcarrier mappers confirm signals mapped to frequency domain subcarriers. The OFDM modulators convert the signals into time domain signals. The detector constructs at least one set for candidate transmission symbols and detects receive signals through ML detection using the set.

公开(公告)号：US08314465B2

公开(公告)日：2012-11-20

申请号：US13039811

申请日：2011-03-03

申请人： Jong-Ho Lee ,  Nae-In Lee

发明人： Jong-Ho Lee ,  Nae-In Lee

IPC分类号： H01L29/76

CPC分类号： H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02192 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7881 ,  H01L29/94

摘要： A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides.

摘要翻译： 半导体器件包括硅酸盐界面层和覆盖硅酸盐界面层的高k电介质层。 高k电介质层包括金属合金氧化物。

公开(公告)号：US08275076B2

公开(公告)日：2012-09-25

申请号：US12386299

申请日：2009-04-16

申请人： Sung-Yoon Jung ,  Sung-Soo Hwang ,  Joo-Hyun Lee ,  Jong-Ho Lee ,  Sung-Hwan Kim ,  Jong-Soo Seo ,  Jong-Kyung Kim ,  Jin-Yong Choi

发明人： Sung-Yoon Jung ,  Sung-Soo Hwang ,  Joo-Hyun Lee ,  Jong-Ho Lee ,  Sung-Hwan Kim ,  Jong-Soo Seo ,  Jong-Kyung Kim ,  Jin-Yong Choi

IPC分类号： H04L27/06

CPC分类号： H04B7/0854 ,  H04L25/03038

摘要： Provided are a receiver and a method for detecting a signal in a multiple antenna system. The receiver includes a filter coefficient calculator and a signal detector. After separating a first signal portion and a second signal portion, the filter coefficient calculator calculates an MMSE filter coefficient using a Matrix Inversion Lemma such that an inverse matrix of the first signal portion has a predetermined constant value regardless of a repetition signal detection process. The signal detector detects a relevant transmission signal from an interference-removed reception signal using the MMSE filter coefficient.

摘要翻译： 提供了一种用于检测多天线系统中的信号的接收机和方法。 接收机包括滤波器系数计算器和信号检测器。 在分离第一信号部分和第二信号部分之后，滤波器系数计算器使用矩阵反转引理来计算MMSE滤波器系数，使得第一信号部分的逆矩阵具有预定的常数值，而与重复信号检测处理无关。 信号检测器使用MMSE滤波器系数从去除干扰的接收信号检测相关的发送信号。