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18 条记录 (耗时 0.018 秒)

    AUGMENTED REMOTE CONTROLLER AND METHOD FOR OPERATING THE SAME
    12.
    发明申请
    AUGMENTED REMOTE CONTROLLER AND METHOD FOR OPERATING THE SAME 有权
    附带的远程控制器及其操作方法

    公开(公告)号：US20110138444A1

    公开(公告)日：2011-06-09

    申请号：US12959714

    申请日：2010-12-03

    申请人： Mingoo KANG ,  Haengjoon Kang ,  Jongsoon Park ,  Jinyung Park ,  Jongchul Kim ,  Junho Park

    发明人： Mingoo KANG ,  Haengjoon Kang ,  Jongsoon Park ,  Jinyung Park ,  Jongchul Kim ,  Junho Park

    IPC分类号： G06F21/00

    CPC分类号： G06F21/31 ,  G06F21/10

    摘要： An image display may be displayed by augmented reality on a remote controller. This may include identifying an electronic device having playable content, receiving information regarding a locked status of the playable content of the identified electronic device, and displaying, on a screen, an object indicating a locked status when the playable content of the identified electronic device requires a user authentication for playing the content. A user authentication input may be received and a determination may be made whether the received user authentication input matches a previously stored user authentication information. The playable content may be released from the locked status when it is determined that the received user authentication input matches the previously stored user authentication information, and information relating to the released playable content may be displayed.

    摘要翻译： 可以通过遥控器上的增强现实显示图像显示。 这可以包括识别具有可播放内容的电子设备，接收关于所识别的电子设备的可播放内容的锁定状态的信息，以及当所识别的电子设备的可播放内容需要时在屏幕上显示指示锁定状态的对象 用于播放内容的用户认证。 可以接收用户认证输入，并且可以确定接收到的用户认证输入是否与先前存储的用户认证信息匹配。 当确定接收到的用户认证输入与先前存储的用户认证信息相匹配时，可播放内容可以从锁定状态释放，并且可以显示与所释放的可播放内容有关的信息。

    Semiconductor memory device
    14.
    发明授权
    Semiconductor memory device 有权

    公开(公告)号：US10205090B2

    公开(公告)日：2019-02-12

    申请号：US15429494

    申请日：2017-02-10

    申请人： Yil-hyung Lee ,  Jong-Kyu Kim ,  Jongsoon Park ,  Jongchul Park

    发明人： Yil-hyung Lee ,  Jong-Kyu Kim ,  Jongsoon Park ,  Jongchul Park

    IPC分类号： H01L43/08 ,  H01L43/02 ,  H01L27/22

    摘要： A semiconductor memory device that includes at least a lower contact plug on a semiconductor substrate, a magnetic tunnel junction of the lower contact plug, and a barrier pattern on a sidewall of the lower contact plug may further include an insulation pattern on the sidewall of the lower contact plug. The insulation pattern may be between the barrier pattern and the magnetic tunnel junction pattern. The insulation pattern may include an upper portion and a lower portion whose width is greater than a width of the upper portion.

    Methods of fabricating semiconductor device
    17.
    发明授权
    Methods of fabricating semiconductor device 有权

    公开(公告)号：US10431459B2

    公开(公告)日：2019-10-01

    申请号：US15668689

    申请日：2017-08-03

    申请人： Woohyun Lee ,  Sang-Kuk Kim ,  Jong-Kyu Kim ,  Yil-hyung Lee ,  Jongsoon Park ,  Hyeji Yoon

    发明人： Woohyun Lee ,  Sang-Kuk Kim ,  Jong-Kyu Kim ,  Yil-hyung Lee ,  Jongsoon Park ,  Hyeji Yoon

    IPC分类号： H01L21/033 ,  H01L21/311 ,  H01L21/687

    摘要： An etching target layer is formed on a substrate. An upper mask layer is formed on the etching target layer. A plurality of preliminary mask patterns is formed on the upper mask layer. The plurality of preliminary mask patterns is arranged at a first pitch. Two neighboring preliminary mask patterns of the plurality of preliminary mask patterns define a preliminary opening. An ion beam etching process is performed on the upper mask layer using the plurality of preliminary mask patterns as an etch mask to form a first preliminary-interim-mask pattern and a pair of second preliminary-interim-mask patterns. The first preliminary-interim-mask pattern is formed between one of the pair of second preliminary-interim-mask patterns and the other of the pair of second preliminary-interim-mask patterns.