公开(公告)号：US20090167176A1

公开(公告)日：2009-07-02

申请号：US12297200

申请日：2007-04-27

申请人： Yusuke Fukui ,  Takuji Tsujita ,  Jun Hashimoto ,  Hikaru Nishitani ,  Masaharu Terauchi ,  Mikihiko Nishitani

发明人： Yusuke Fukui ,  Takuji Tsujita ,  Jun Hashimoto ,  Hikaru Nishitani ,  Masaharu Terauchi ,  Mikihiko Nishitani

IPC分类号： H01J17/49 ,  H01J9/26

CPC分类号： H01J11/40 ,  H01J9/02 ,  H01J11/12 ,  H01J11/38

摘要： A PDP can be driven at low voltage while having a charge retention property in a protection layer, and has favorable image display properties. Additionally, the PDP prevents the occurrence of discharge delay and realizes high-quality image display by performing favorable high-speed driving in a high definition PDP. To achieve this, a surface layer (8) is formed to a film thickness of 1 μm in an oxygen atmosphere having an oxygen partial pressure of 0.025 Pa or more, the surface layer (8) is provided on a face of a dielectric layer (7) on a discharge space side. Furthermore, MgO particles (16) are dispersed on a surface of the surface layer (8). The surface layer (8) has the effects of protecting the dielectric layer (7) from ion bombardment during discharge, reducing the firing voltage, and preventing excessive electron loss. Also, the MgO particles (16) have a high initial electron emission property.

摘要翻译： PDP可以在低电压下驱动，同时在保护层中具有电荷保持性，并且具有良好的图像显示性能。 此外，PDP通过在高清晰度PDP中执行有利的高速驱动来防止放电延迟的发生并实现高质量的图像显示。 为了实现这一点，在氧分压为0.025Pa以上的氧气氛中，表面层（8）形成为1μm的膜厚，表面层（8）设置在电介质层的表面（ 7）放电空间侧。 此外，MgO颗粒（16）分散在表面层（8）的表面上。 表面层（8）具有在放电期间保护电介质层（7）免受离子轰击的作用，降低了点火电压，并防止了电子损失过大。 此外，MgO粒子（16）具有高的初始电子发射特性。

公开(公告)号：US20080157672A1

公开(公告)日：2008-07-03

申请号：US11965554

申请日：2007-12-27

申请人： Takuji Tsujita ,  Yusuke Fukui ,  Masaharu Terauchi ,  Mikihiko Nishitani ,  Michiko Okafuji ,  Shinichiro Ishino ,  Kaname Mizokami

发明人： Takuji Tsujita ,  Yusuke Fukui ,  Masaharu Terauchi ,  Mikihiko Nishitani ,  Michiko Okafuji ,  Shinichiro Ishino ,  Kaname Mizokami

IPC分类号： H01J17/49

CPC分类号： H01J11/40 ,  H01J11/12

摘要： Disclosed is a PDP and a manufacturing method therefor having improved display performance even if the PDP is of a fine-cell structure. A protective layer of the PDP is composed of an MgO film layer and an MgO particle layer that is made of MgO particles. The MgO particles are formed by burning an MgO precursor and satisfy that a/b≧1, where a denotes a spectrum integral value in a wavelength region of a CL spectrum from 200 nm to 300 nm, exclusive of 300 nm, and b denotes a spectrum integral value in a wavelength region of the CL spectrum from 300 nm to 550 nm, exclusive of 550 nm. With provision of the MgO particle layer, the discharge characteristics of the protective layer improve (shorter discharge delay and less temperature dependence of the discharge delay). Consequently, the PDP is ensured to exhibit excellent display performance.

摘要翻译： 公开了即使PDP是细小结构的PDP也具有提高显示性能的制造方法。 PDP的保护层由MgO膜层和由MgO粒子构成的MgO粒子层构成。 通过烧成MgO前体，满足a / b> = 1来形成MgO粒子，其中a表示在200nm至300nm的CL谱的波长区域中的光谱积分值，不包括300nm，b表示 在300nm至550nm的CL光谱的波长区域中的光谱积分值，不包括550nm。 通过提供MgO颗粒层，保护层的放电特性提高（放电延迟更短，放电延迟的温度依赖性较小）。 因此，确保了表现出优异的显示性能的PDP。

公开(公告)号：US08004190B2

公开(公告)日：2011-08-23

申请号：US12443817

申请日：2007-10-19

申请人： Takuji Tsujita ,  Yusuke Fukui ,  Masaharu Terauchi ,  Mikihiko Nishitani ,  Michiko Okafuji ,  Shinichiro Ishino ,  Kaname Mizokami

发明人： Takuji Tsujita ,  Yusuke Fukui ,  Masaharu Terauchi ,  Mikihiko Nishitani ,  Michiko Okafuji ,  Shinichiro Ishino ,  Kaname Mizokami

IPC分类号： H01J17/49

CPC分类号： H01J11/12 ,  H01J9/02 ,  H01J11/40

摘要： The present invention improves discharge characteristics of a protective layer in order to provide a PDP that exhibits excellent display performance even if the PDP is of a fine-cell structure. The present invention also provides a manufacturing method for the PDP. In particular, a protective layer 8 is composed of an MgO film layer 81 and an MgO particle layer 82 that is made of MgO particles 16. The MgO particles 16 are formed by burning an MgO precursor and satisfy that a/b≧1, where a denotes a spectrum integral value in a wavelength region of a CL spectrum from 200 nm to 300 nm, exclusive of 300 nm, and b denotes a spectrum integral value in a wavelength region of the CL spectrum from 300 nm to 550 nm, exclusive of 550 nm.

摘要翻译： 本发明改进了保护层的放电特性，以便提供即使PDP是细小结构结构也显示出优异的显示性能的PDP。 本发明还提供了PDP的制造方法。 特别地，保护层8由MgO膜层81和由MgO粒子16制成的MgO粒子层82构成。MgO粒子16是通过烧成MgO前体形成的，满足a /b≥1，其中 a表示从200nm到300nm的CL谱的波长区域中的光谱积分值，不包括300nm，b表示从300nm到550nm的CL光谱的波长区域中的光谱积分值，不包括 550nm。

公开(公告)号：US20100181909A1

公开(公告)日：2010-07-22

申请号：US12665310

申请日：2008-04-15

申请人： Takuji Tsujita ,  Yusuke Fukui ,  Masaharu Terauchi ,  Mikihiko Nishitani ,  Shinichiro Ishino ,  Kaname Mizokami ,  Michiko Okafuji ,  Hiroshi Asano ,  Kyohei Yoshino

发明人： Takuji Tsujita ,  Yusuke Fukui ,  Masaharu Terauchi ,  Mikihiko Nishitani ,  Shinichiro Ishino ,  Kaname Mizokami ,  Michiko Okafuji ,  Hiroshi Asano ,  Kyohei Yoshino

IPC分类号： H01J17/49

CPC分类号： H01J11/40 ,  H01J11/12 ,  H01J11/42

摘要： A plasma display panel demonstrating excellent image display performance by suppressing generation of initialization bright points through modification of the phosphor layer, and by eliminating variation in discharge characteristics between the discharge cells of each color. In addition to solving these problems, the luminance of the plasma display panel is also enhanced by using the ultraviolet rays emitted in the discharge space in order to promote the production of visible light on the front panel side. Specifically, the phosphor layer (14) is composed of a phosphor component and of MgO powder (16) disposed principally inside the phosphor layer and exposed towards the surface (140) facing the discharge space in order to impart secondary electron emission characteristics. The MgO powder (16) is composed of MgO particles (16a-16d) having a crystal structure with two specific crystal faces consisting of the (100) crystal face and the (111) crystal face, or three specific crystal faces consisting of the (100) crystal face, the (110) crystal face, and the (111) crystal face.

摘要翻译： 一种等离子体显示面板，其通过改变荧光体层而抑制初始化亮点的产生，并且消除每种颜色的放电单元之间的放电特性的变化，从而显示出优异的图像显示性能。 除了解决这些问题之外，通过使用在放电空间中发射的紫外线来提高等离子体显示面板的亮度，以促进前面板侧的可见光的产生。 具体地，荧光体层（14）由荧光体组分和主要位于荧光体层的内部的MgO粉末（16）构成，并朝向面向放电空间的表面（140）暴露以赋予二次电子发射特性。 MgO粉末（16）由具有由（100）晶面和（111）晶面组成的两个特定晶面的晶体结构的MgO粒子（16a-16d）或由（111）晶面组成的三个特定晶面构成， 100）晶面，（110）晶面和（111）晶面。

公开(公告)号：US5728231A

公开(公告)日：1998-03-17

申请号：US648497

申请日：1996-05-15

申请人： Takayuki Negami ,  Masaharu Terauchi ,  Mikihiko Nishitani ,  Takahiro Wada

发明人： Takayuki Negami ,  Masaharu Terauchi ,  Mikihiko Nishitani ,  Takahiro Wada

IPC分类号： C23C14/06 ,  C23C14/08 ,  C23C14/58 ,  H01L31/032 ,  H01L31/0336 ,  H01L31/18

CPC分类号： C23C14/5866 ,  C23C14/0623 ,  C23C14/08 ,  H01L31/0322 ,  H01L31/0323 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521 ,  Y10S438/93 ,  Y10T428/12528 ,  Y10T428/12611 ,  Y10T428/12681 ,  Y10T428/12903

摘要： A precursor for manufacturing a semiconductor thin film in which an oxide thin film comprising at least one element as a dopant, selected from a group which consists of Groups IA, IIA, IIB, VA, and VB elements, and Groups IB and IIIA elements which are main components of the semiconductor thin film are deposited on a substrate, or a precursor for manufacturing a semiconductor thin film which is formed by depositing a thin film of oxide comprising the Groups IB and IIIA elements on the substrate wherein the content of at least one of the Groups IB and IIIA elements is varied in the direction of film thickness, and a method for manufacturing a semiconductor thin film comprising the step of heat treating the precursor for manufacturing the semiconductor thin film in an atmosphere containing a Group VIA element. The present invention provides a precursor for manufacturing a semiconductor thin film and a method for manufacturing the semiconductor thin film using the precursor which are suitable for manufacturing a semiconductor thin film having a chalcopyrite structure that has a high and uniform energy conversion efficiency when the semiconductor thin film is used as a photoabsorptive layer of a solar cell.

摘要翻译： 用于制造半导体薄膜的前体，其中包含至少一种元素作为掺杂剂的氧化物薄膜，其选自由IA，IIA，IIB，VA和VB族元素组成的组以及IB和IIIA族元素， 半导体薄膜的主要成分沉积在基板上，或用于制造半导体薄膜的前体，该半导体薄膜是通过在衬底上沉积包含IB和IIIA族元素的氧化物的薄膜而形成的，其中至少一个 IB和IIIA族元素在膜厚方向上是不同的，以及一种制造半导体薄膜的方法，包括在含有VIA元素的气氛中对用于制造半导体薄膜的前体进行热处理的步骤。 本发明提供一种用于制造半导体薄膜的前体和使用该前体制造半导体薄膜的方法，该半导体薄膜适用于制造具有高半导体薄片的具有高且均匀的能量转换效率的黄铜矿结构的半导体薄膜 膜被用作太阳能电池的光吸收层。

公开(公告)号：US20100096986A1

公开(公告)日：2010-04-22

申请号：US12443817

申请日：2007-10-19

申请人： Takuji Tsujita ,  Yusuke Fukui ,  Masaharu Terauchi ,  Mikihiko Nishitani ,  Michiko Okafuji ,  Kaname Mizokami

发明人： Takuji Tsujita ,  Yusuke Fukui ,  Masaharu Terauchi ,  Mikihiko Nishitani ,  Michiko Okafuji ,  Kaname Mizokami

IPC分类号： H01J17/49

CPC分类号： H01J11/12 ,  H01J9/02 ,  H01J11/40

摘要： The present invention improves discharge characteristics of a protective layer in order to provide a PDP that exhibits excellent display performance even if the PDP is of a fine-cell structure. The present invention also provides a manufacturing method for the PDP. In particular, a protective layer 8 is composed of an MgO film layer 81 and an MgO particle layer 82 that is made of MgO particles 16. The MgO particles 16 are formed by burning an MgO precursor and satisfy that a/b≧1, where a denotes a spectrum integral value in a wavelength region of a CL spectrum from 200 nm to 300 nm, exclusive of 300 nm, and b denotes a spectrum integral value in a wavelength region of the CL spectrum from 300 nm to 550 nm, exclusive of 550 nm.

摘要翻译： 本发明改进了保护层的放电特性，以便提供即使PDP是细小结构结构也显示出优异的显示性能的PDP。 本发明还提供了PDP的制造方法。 特别地，保护层8由MgO膜层81和由MgO粒子16制成的MgO粒子层82构成。MgO粒子16是通过烧成MgO前体形成的，满足a /b≥1，其中 a表示从200nm到300nm的CL谱的波长区域中的光谱积分值，不包括300nm，b表示从300nm到550nm的CL光谱的波长区域中的光谱积分值，不包括 550nm。

公开(公告)号：US06548380B1

公开(公告)日：2003-04-15

申请号：US09658667

申请日：2000-09-08

申请人： Masashi Goto ,  Mikihiko Nishitani ,  Masaharu Terauchi

发明人： Masashi Goto ,  Mikihiko Nishitani ,  Masaharu Terauchi

IPC分类号： H01L2120

CPC分类号： H01L29/66765 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02672 ,  H01L29/78678 ,  Y02E10/545 ,  Y02E10/546

摘要： By applying ion or optical energy or catalytic effects at the time of depositing a crystalline silicon thin film, improvements in crystallinity of the crystalline silicon thin film in proximities of an interface of a substrate or smoothing of its surface may be achieved. With this arrangement, it is possible to achieve improvements in crystallinity of the crystalline silicon film that is formed in a low temperature condition through CVD method and to prevent concaves and convexes from being formed on its surface or to prevent oxidation of grain fields, and it is accordingly possible to provide a thin film transistor, a semiconductor device such as a solar cell and methods for manufacturing these that exhibit superior characteristics and reliability.

摘要翻译： 通过在沉积晶体硅薄膜时施加离子或光能或催化作用，可以实现晶体硅薄膜在基底界面附近或其表面平滑度附近的结晶度的改善。 通过这种布置，可以通过CVD法在低温条件下形成的结晶硅膜的结晶度得到改善，并且防止在其表面上形成凹凸或防止晶粒的氧化，并且 因此可以提供薄膜晶体管，诸如太阳能电池的半导体器件及其制造方法，其具有优异的特性和可靠性。

公开(公告)号：US08222814B2

公开(公告)日：2012-07-17

申请号：US12443821

申请日：2007-10-19

申请人： Masaharu Terauchi ,  Yusuke Fukui ,  Takuji Tsujita ,  Michiko Okafuji ,  Mikihiko Nishitani

发明人： Masaharu Terauchi ,  Yusuke Fukui ,  Takuji Tsujita ,  Michiko Okafuji ,  Mikihiko Nishitani

IPC分类号： H01J17/49

CPC分类号： H01J11/40 ,  H01J9/02 ,  H01J11/12

摘要： The present invention improves discharge characteristics of a protective layer in order to provide a PDP that exhibits excellent display performance even if the PDP is of a fine-cell structure. The present invention also provides a manufacturing method for the PDP. In particular, a protective layer 8 is composed of an MgO film layer 81 and an MgO particle layer 82 that is made of MgO particles 16. The MgO particles 16 are formed by burning an MgO precursor and satisfy that a/b≧1.2, where a denotes a spectrum integral value in a wavelength region of a CL spectrum from 650 nm to 900 nm, exclusive of 900 nm, and b denotes a spectrum integral value in a wavelength region of the CL spectrum from 300 nm to 550 nm, exclusive of 550 nm.

摘要翻译： 本发明改进了保护层的放电特性，以便提供即使PDP是细小结构结构也显示出优异的显示性能的PDP。 本发明还提供了PDP的制造方法。 特别地，保护层8由MgO膜层81和由MgO粒子16制成的MgO粒子层82构成。MgO粒子16是通过烧成MgO前体形成的，满足a /b≥1.2，其中 a表示从650nm到900nm的CL谱的波长区域中的光谱积分值，不包括900nm，b表示从300nm到550nm的CL光谱的波长区域中的光谱积分值，不包括 550nm。

公开(公告)号：US20080160346A1

公开(公告)日：2008-07-03

申请号：US11965575

申请日：2007-12-27

申请人： Masaharu Terauchi ,  Yusuke Fukui ,  Takuji Tsujita ,  Michiko Okafuji ,  Mikihiko Nishitani

发明人： Masaharu Terauchi ,  Yusuke Fukui ,  Takuji Tsujita ,  Michiko Okafuji ,  Mikihiko Nishitani

IPC分类号： B32B9/04

CPC分类号： H01J11/40 ,  H01J11/12

摘要： Disclosed is a PDP and a manufacturing method therefor having improved display performance even if the PDP is of a fine-cell structure. The PDP has a protective layer that is composed of an MgO film layer and an MgO particle layer made of MgO particles. The MgO particles are formed by burning an MgO precursor and satisfy that a/b≧1.2, where a denotes a spectrum integral value in a wavelength region of a CL spectrum from 650 nm to 900 nm, exclusive of 900 nm, and b denotes a spectrum integral value of a wavelength region of the CL spectrum from 300 nm to 550 nm, exclusive of 550 nm. The MgO particles have many high energy levels in the energy band and thus emission of initial electrons is caused more easily, which leads to suppress discharge delay and also to suppress temperature dependence of the discharge delay.

摘要翻译： 公开了即使PDP是细小结构的PDP也具有提高显示性能的制造方法。 PDP具有由MgO膜层和由MgO粒子构成的MgO粒子层构成的保护层。 MgO颗粒通过烧制MgO前体而满足a / b> = 1.2，其中a表示在650nm至900nm的不同于900nm的CL谱的波长区域中的光谱积分值，b表示 来自300nm至550nm的CL光谱的波长区域的光谱积分值，不包括550nm。 MgO颗粒在能带中具有许多高能量水平，因此更容易引起初始电子的发射，这导致抑制放电延迟并且还抑制放电延迟的温度依赖性。

公开(公告)号：US06846728B2

公开(公告)日：2005-01-25

申请号：US10379539

申请日：2003-03-06

申请人： Masashi Goto ,  Mikihiko Nishitani ,  Masaharu Terauchi

发明人： Masashi Goto ,  Mikihiko Nishitani ,  Masaharu Terauchi

IPC分类号： G02F1/136 ,  C23C16/509 ,  C23C16/511 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/205 ,  H01L21/336 ,  H01L29/786 ,  H01L31/04 ,  H01L21/36

CPC分类号： H01L29/66765 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02672 ,  H01L29/78678 ,  Y02E10/545 ,  Y02E10/546

摘要： By applying ion or optical energy or catalytic effects at the time of depositing a crystalline silicon thin film, improvements in crystallinity of the crystalline silicon thin film in proximities of an interface of a substrate or smoothing of its surface may be achieved. With this arrangement, it is possible to achieve improvements in crystallinity of the crystalline silicon film that is formed in a low temperature condition through CVD method and to prevent concaves and convexes from being formed on its surface or to prevent oxidation of grain fields, and it is accordingly possible to provide a thin film transistor, a semiconductor device such as a solar cell and methods for manufacturing these that exhibit superior characteristics and reliability.

摘要翻译： 通过在沉积晶体硅薄膜时施加离子或光能或催化作用，可以实现晶体硅薄膜在基底界面附近或其表面平滑度附近的结晶度的改善。 通过这种布置，可以通过CVD法在低温条件下形成的结晶硅膜的结晶度得到改善，并且防止在其表面上形成凹凸或防止晶粒的氧化，并且 因此可以提供薄膜晶体管，诸如太阳能电池的半导体器件及其制造方法，其具有优异的特性和可靠性。