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131 条记录 (耗时 0.038 秒)

    Resist composition
    11.
    发明授权
    Resist composition 有权

    公开(公告)号：US06673511B1

    公开(公告)日：2004-01-06

    申请号：US09697921

    申请日：2000-10-27

    申请人： Jun Hatakeyama ,  Youichi Ohsawa ,  Takeru Watanabe

    发明人： Jun Hatakeyama ,  Youichi Ohsawa ,  Takeru Watanabe

    IPC分类号： G03F7004

    CPC分类号： G03F7/0392 ,  G03F7/0045 ,  Y10S430/106

    摘要： Although use of a nitrogen-containing compound as a basic compound component of a resist composition makes it possible to ease the T-top problem at an acid dissociation constant pKa falling within a range of 2 to 6, it is accompanied with the problem that the reaction, that is, acid diffusion upon use of a highly-reactive acid-labile group cannot be controlled. In order to overcome this problem, one or more basic compounds selected from those represented by the following formulas (I) to (III) and (1) to (4) are employed.

    Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process
    12.
    发明申请
    Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process 有权
    阻止含有热酸发生剂的下层组合物，抗下层薄膜形成基材和图案化工艺

    公开(公告)号：US20100119970A1

    公开(公告)日：2010-05-13

    申请号：US12588590

    申请日：2009-10-20

    申请人： Youichi Ohsawa ,  Jun Hatakeyama ,  Takeru Watanabe ,  Takeshi Kinsho

    发明人： Youichi Ohsawa ,  Jun Hatakeyama ,  Takeru Watanabe ,  Takeshi Kinsho

    IPC分类号： G03F7/20 ,  C07C309/19 ,  C07C309/04 ,  G03F7/004

    CPC分类号： C07C381/12 ,  C07C309/12 ,  C07C2603/74 ,  C07D307/93 ,  G03F7/0045 ,  G03F7/091

    摘要： There is disclosed a resist lower-layer composition configured to be used by a multi-layer resist method used in lithography to form a layer lower than a photoresist layer acting as a resist upper layer film, wherein the resist lower-layer composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and wherein the resist lower-layer composition comprises, at least, a thermal acid generator for generating an acid represented by the general formula (1) by heating at a temperature of 100° C. or higher. RCOO—CH2CF2SO3−H+  (1) There can be provided a resist lower-layer composition in a multi-layer resist method (particularly, a two-layer resist method and a three-layer resist method), which composition is used to form a layer lower than a photoresist layer acting as a resist upper layer film, which composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and which composition is capable of forming a resist lower layer film, intermediate-layered film, and the like having a higher anti-poisoning effect and exhibiting a lower load to the environment.

    摘要翻译： 公开了一种抗蚀剂下层组合物，其被配置为通过在光刻中使用的多层抗蚀剂方法使用以形成低于作为抗蚀剂上层膜的光致抗蚀剂层的层，其中抗蚀剂下层组合物变得不溶或 形成下层后在碱性显影剂中难以溶解，并且其中抗蚀剂下层组合物至少包含通过在100℃的温度下加热产生由通式（1）表示的酸的热酸发生剂 ℃以上。 RCOO-CH 2 CF 2 SO 3 -H +（1）可以提供多层抗蚀剂法（特别是双层抗蚀剂法和三层抗蚀剂法）中的抗蚀剂下层组合物，该组合物用于形成 层低于作为抗蚀剂上层膜的光致抗蚀剂层，该组合物在形成下层之后在碱性显影剂中变得不溶或难溶，并且该组合物能够形成抗蚀剂下层膜，中间层膜 等具有较高的抗中毒作用并且对环境具有较低的负荷。

    Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern
    13.
    发明授权
    Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern 有权
    抵抗下层材料，抗蚀剂包含该材料的下层基材和形成图案的方法

    公开(公告)号：US07871761B2

    公开(公告)日：2011-01-18

    申请号：US11881761

    申请日：2007-07-27

    申请人： Jun Hatakeyama ,  Toshihiko Fujii ,  Youichi Ohsawa

    发明人： Jun Hatakeyama ,  Toshihiko Fujii ,  Youichi Ohsawa

    IPC分类号： G03F7/26 ,  G03F7/095

    CPC分类号： G03F7/094 ,  Y10S430/12 ,  Y10S430/126

    摘要： Provided is a method for forming a resist lower layer material for use in a multilayer resist process, especially two-layer resist process or three-layer resist process, having a function of neutralizing an amine contaminant from a substrate, thereby reducing a harmful effect such as trailing skirts of a resist pattern of an upper layer resist. Specifically, there is provided a material for forming a lower layer of a chemically amplified photoresist layer comprising a crosslinkable polymer and a thermal acid generator that can generate an acid by heating at 100° C. or greater and is represented by the general formula (1a): R1CF2SO3−(R2)4N+  (1a), as well as a resist lower layer substrate comprising a resist lower layer formed using said material.

    摘要翻译： 提供一种形成用于多层抗蚀剂工艺的抗蚀剂下层材料的方法，特别是具有从基材中和胺污染物的功能的两层抗蚀剂工艺或三层抗蚀剂工艺，从而减少了诸如 作为上层抗蚀剂的抗蚀剂图案的尾部裙边。 具体地，提供了一种用于形成化学放大光致抗蚀剂层的下层的材料，其包含可交联聚合物和热酸产生剂，其可通过在100℃以上加热而产生酸，并由通式（1a ）：R1CF2SO3-（R2）4N +（1a），以及包含使用所述材料形成的抗蚀剂下层的抗蚀剂下层基板。

    Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern
    14.
    发明申请
    Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern 有权
    抵抗下层材料，抗蚀剂包含该材料的下层基材和形成图案的方法

    公开(公告)号：US20080032231A1

    公开(公告)日：2008-02-07

    申请号：US11881761

    申请日：2007-07-27

    申请人： Jun Hatakeyama ,  Toshihiko Fujii ,  Youichi Ohsawa

    发明人： Jun Hatakeyama ,  Toshihiko Fujii ,  Youichi Ohsawa

    IPC分类号： G03F1/04 ,  G03F7/20

    CPC分类号： G03F7/094 ,  Y10S430/12 ,  Y10S430/126

    摘要： Provided is a method for forming a resist lower layer material for use in a multilayer resist process, especially two-layer resist process or three-layer resist process, having a function of neutralizing an amine contaminant from a substrate, thereby reducing a harmful effect such as trailing skirts of a resist pattern of an upper layer resist. Specifically, there is provided a material for forming a lower layer of a chemically amplified photoresist layer comprising a crosslinkable polymer and a thermal acid generator that can generate an acid by heating at 100° C. or greater and is represented by the general formula (1a): R1CF2SO3−(R2)4N+,   (1a) as well as a resist lower layer substrate comprising a resist lower layer formed using said material.

    摘要翻译： 提供一种形成用于多层抗蚀剂工艺的抗蚀剂下层材料的方法，特别是具有从基材中和胺污染物的功能的两层抗蚀剂工艺或三层抗蚀剂工艺，从而减少了诸如 作为上层抗蚀剂的抗蚀剂图案的尾部裙边。 具体地，提供了一种用于形成化学放大光致抗蚀剂层的下层的材料，其包含可交联聚合物和热酸产生剂，其可通过在100℃以上加热而产生酸，并由通式（1a ）：<？in-line-formula description =“In-line Formulas”end =“lead”？> R＆lt; 1＆lt; CF 2＆lt; 3＆lt; 3＆lt; （1a）＆lt; / SUP＆gt;（R＆lt; 2＆gt;）＆lt; 4＆gt; “内联式”末端=“尾”→以及包含使用所述材料形成的抗蚀剂下层的抗蚀剂下层基板。

    NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
    18.
    发明申请
    NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
    新型光电发生器，电阻组合和图案处理

    公开(公告)号：US20090061358A1

    公开(公告)日：2009-03-05

    申请号：US12204685

    申请日：2008-09-04

    申请人： Masaki OHASHI ,  Youichi Ohsawa ,  Takeru Watanabe ,  Takeshi Kinsho

    发明人： Masaki OHASHI ,  Youichi Ohsawa ,  Takeru Watanabe ,  Takeshi Kinsho

    IPC分类号： G03F7/004 ,  G03F7/20 ,  C07J5/00 ,  C07J43/00

    CPC分类号： C07J31/006 ,  C07J41/0055 ,  C07J43/003 ,  G03F7/0045 ,  G03F7/0397 ,  G03F7/2041 ,  Y10S430/114

    摘要： Photoacid generators generate sulfonic acids of formula (1a) or (1c) upon exposure to high-energy radiation. R1—COOCH(CF3)CF2SO3+H+  (1a) R1—O—COOCH(CF3)CF2SO3−H+  (1c) R1 is a C20-C50 hydrocarbon group having a steroid structure. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.

    摘要翻译： 光生酸发生剂在暴露于高能量辐射时产生式（1a）或（1c）的磺酸。 <？in-line-formula description =“In-line formula”end =“lead”？> R1-COOCH（CF3）CF2SO3 + H +（1a）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> R1-O-COOCH（CF3）CF2SO3-H +（1c） =“内联式”末端=“尾”→R1是具有类固醇结构的C20-C50烃基。 光致酸产生剂与树脂相容并且可以控制酸扩散，因此适用于化学增幅抗蚀剂组合物。

    Positive resist compositions and patterning process
    19.
    发明授权
    Positive resist compositions and patterning process 有权
    正极抗蚀剂组成和图案化工艺

    公开(公告)号：US08017302B2

    公开(公告)日：2011-09-13

    申请号：US12355418

    申请日：2009-01-16

    申请人： Youichi Ohsawa ,  Takeshi Kinsho ,  Takeru Watanabe

    发明人： Youichi Ohsawa ,  Takeshi Kinsho ,  Takeru Watanabe

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/2041 ,  Y10S430/111 ,  Y10S430/122

    摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units, represented by formula (1). The acid generator (B) is a specific sulfonium salt compound. When processed by lithography, the composition is improved in resolution and forms a pattern with a minimal LER. Herein R1 is H or methyl, R2 is an acid labile group, R3 is CO2R4 when X is CH2, R3 is H or CO2R4 when X is O, R4 is a monovalent C1-C20 hydrocarbon group, and m is 1 or 2.

    摘要翻译： 正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。 树脂（A）是包含由式（1）表示的特定重复单元的聚合物。 酸产生剂（B）是特定的锍盐化合物。 当通过光刻处理时，组合物的分辨率提高并且形成具有最小LER的图案。 本文中R1是H或甲基，R2是酸不稳定基团，当X是CH2时，R3是CO2R4，当X是O时，R3是H，CO2R4，R4是一价C1-C20烃基，m是1或2。