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公开(公告)号：US08936962B2
公开(公告)日：2015-01-20
申请号：US13256087
申请日：2010-02-15
Applicant: Junichi Fujikata , Toshio Baba , Jun Ushida
Inventor： Junichi Fujikata , Toshio Baba , Jun Ushida
CPC classification number: G02F1/025 , G02F1/2257
Abstract: An optical modulator according to the present invention is configured at least by a semiconductor layer subjected to a doping process so as to exhibit a first conductivity type, and a semiconductor layer subjected to a doping process so as to exhibit a second conductivity type. Further, in the optical modulator, at least the first conductivity type semiconductor layer, a dielectric layer, the second conductivity type semiconductor layer, and a transparent electrode optically transparent in at least a near-infrared wavelength region are laminated in order.
Abstract translation: 根据本发明的光调制器至少由经受掺杂工艺的半导体层构成以呈现第一导电类型，以及经受掺杂工艺以显示第二导电类型的半导体层。 此外，在光调制器中，依次层叠至少第一导电型半导体层，电介质层，第二导电型半导体层和在至少近红外波长区域中透光的透明电极。
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公开(公告)号：US08483520B2
公开(公告)日：2013-07-09
申请号：US13202680
申请日：2010-02-18
Applicant: Junichi Fujikata , Jun Ushida , Akio Toda , Motofumi Saitoh
Inventor： Junichi Fujikata , Jun Ushida , Akio Toda , Motofumi Saitoh
IPC: G02F1/025
CPC classification number: G02F1/025
Abstract: An optical modulation structure includes a lower cladding layer (102), a first silicon layer (103) integrally formed from silicon of a first conductivity type on the lower cladding layer (102) while including a core (104) and slab regions (105) arranged on both sides of the core (104) and connected to the core, a concave portion (104a) formed in an upper surface of the core (104), and a second silicon layer (109) of a second conductivity type formed on a dielectric layer (108) in the concave portion (104a) so as to fill the concave portion (104a).
Abstract translation: 光调制结构包括下包层（102），在下包层（102）上由第一导电类型的硅整体形成的第一硅层（103），同时包括芯（104）和板区（105） 布置在芯体（104）的两侧并连接到芯部，形成在芯部（104）的上表面中的凹部（104a）和形成在芯体（104）上的第二导电类型的第二硅层（109） 在凹部（104a）中的介电层（108），以填充凹部（104a）。
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公开(公告)号：US07020373B2
公开(公告)日：2006-03-28
申请号：US10402232
申请日：2003-03-26
Applicant: Masayuki Shirane , Jun Ushida
Inventor： Masayuki Shirane , Jun Ushida
IPC: G02B6/10
CPC classification number: G02B1/11
Abstract: A one-dimensional photonic crystal has a spatial distribution in which the refractive index periodically varies in a first direction that light is caused to be propagated and in which the refractive index is uniform in a second direction perpendicular to the first direction. An antireflective coating structure for the one-dimensional photonic crystal includes a thin-film having a refractive index and a thickness determined by a predetermined calculation method. A two or three-dimensional photonic crystal comprises two or more media that have different refractive indexes and are arranged in a two or three-dimensional pattern. An antireflective coating structure for the two or three-dimensional photonic crystal includes a thin-film comprising one of the media included in the photonic crystal. In the structure, the thin-film is disposed on an end face of the photonic crystal so as to increase the incident efficiency of light entering the photonic crystal. Thereby, the reflection of the photonic crystal is securely prevented in a simple manner.
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公开(公告)号：US08467637B2
公开(公告)日：2013-06-18
申请号：US12598162
申请日：2008-04-30
Applicant: Junichi Fujikata , Jun Ushida , Daisuke Okamoto , Kenichi Nishi , Keishi Ohashi , Tai Tsuchizawa , Seiichi Itabashi
Inventor： Junichi Fujikata , Jun Ushida , Daisuke Okamoto , Kenichi Nishi , Keishi Ohashi , Tai Tsuchizawa , Seiichi Itabashi
CPC classification number: H01L31/022408 , B82Y20/00 , G02B6/1226 , G02B6/4204 , G02B6/4214 , H01L31/02325
Abstract: In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)λ to λ [λ: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than λ/(2 ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.
Abstract translation: 在波导路耦合型光电二极管中，相邻地配置有半导体光吸收层和光波导路径芯。 由至少一层形成的电极安装在半导体光吸收层和光波导路径芯的边界部分。 电极以（1/100）λ到λλ通过光波导路径芯透射的光的波长的间隔排列。 至少一部分电极嵌入在半导体光吸收层中。 从半导体光吸收层的表面嵌入深度是不大于λ/（2ns）[ns：半导体光吸收层的折射率]的值。 至少一层电极由可以表面等离子体激发的材料构成。
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公开(公告)号：US20110311178A1
公开(公告)日：2011-12-22
申请号：US13202680
申请日：2010-02-18
Applicant: Junichi Fujikata , Jun Ushida , Akio Toda , Motofumi Saitoh
Inventor： Junichi Fujikata , Jun Ushida , Akio Toda , Motofumi Saitoh
IPC: G02F1/025
CPC classification number: G02F1/025
Abstract: The components are a lower clad layer (102), a first silicon layer (103) that is formed on the lower clad layer (102) as a single body made of silicon of a first conduction type and has a slab region (105) that is disposed at a core (104) and on both sides of the core (104) and connects to the core, a concave section (104a) that is formed in the top surface of the core (104), and a second silicon layer (109) of a second conduction type that is formed inside the concave section (104a) with an intervening dielectric layer (108) to fill the inside of the concave section (104a).
Abstract translation: 这些部件是下包层（102），第一硅层（103），其形成在下包层（102）上，作为由第一导电类型的硅制成的单体，并具有板区域（105） 设置在芯部（104）处并且在芯部（104）的两侧并且连接到芯部，形成在芯部（104）的顶表面中的凹部（104a）和第二硅层（ 109），其形成在所述凹部（104a）的内部，并具有填充所述凹部（104a）的内部的中间介电层（108）。
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Patent Agency Ranking
公开(公告)号：US08078021B2
公开(公告)日：2011-12-13
申请号：US12519693
申请日：2007-12-12
Applicant: Jun Ushida
Inventor： Jun Ushida
CPC classification number: G02B6/125 , G02B6/1228 , G02B6/14 , G02B2006/12147
Abstract: A waveguide connecting structure includes a light branching element (111) for branching light from an input optical waveguide (201) including one core into two branched light components having the same optical power and the same phase, and a twin-arm waveguide (113) including a pair of arm waveguides (113A, 113B) for outputting the light components branched by the light branching element to a slot waveguide (202) including two cores arranged in parallel at a narrow spacing. The pair of arm waveguides have cores formed in a cladding on a substrate and having a refractive index higher than that of the cladding, and are formed such that the spacing between them gradually narrows and becomes equal to the core spacing of the slot waveguide from the core input ends into which the branched light components enter toward the core output ends from which the light components are output to the slot waveguide.
Abstract translation: 波导连接结构包括：光分支元件（111），用于将包括一芯的输入光波导（201）的光分为具有相同光功率和相同相位的两个分支光分量;以及双臂波导（113） 包括用于将由光分支元件分支的光分量输出到包括以窄间隔平行布置的两个芯的狭槽波导（202）的一对臂波导（113A，113B）。 一对臂波导具有形成在基板上的包层中并且折射率高于包层的折射率的芯，并且形成为使得它们之间的间隔逐渐变窄并且变得等于槽波导的芯间距 其中分支光分量进入其中光分量被输出到槽波导的芯输出端的核心输入端。
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17.发明申请公开(公告)号：US20110002582A1
公开(公告)日：2011-01-06
申请号：US12919461
申请日：2009-02-10
Applicant: Daisuke Okamoto , Kenichi Nishi , Junichi Fujikata , Jun Ushida
Inventor： Daisuke Okamoto , Kenichi Nishi , Junichi Fujikata , Jun Ushida
CPC classification number: H01L25/0657 , H01L23/48 , H01L23/645 , H01L24/13 , H01L24/16 , H01L24/48 , H01L25/167 , H01L2224/13099 , H01L2224/16145 , H01L2224/48095 , H01L2224/48227 , H01L2224/73207 , H01L2225/0651 , H01L2225/06513 , H01L2225/06531 , H01L2225/06534 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01033 , H01L2924/19041 , H01L2924/19042 , H01L2924/30105 , H01L2924/30107 , Y10T29/41 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: Provided is a semiconductor optical interconnection device capable of transmitting signals between laminated semiconductor chips in a structure where semiconductor chips highly functionalized by being bonded to an optical interconnection chip are laminated. The semiconductor optical interconnection device includes a semiconductor chip 1 and an optical interconnection chip 2. The optical interconnection chip 2 includes an optical element formed thereon (for instance, a photo-sensitive element, a luminous element, or an optical modulator) which has a function relating to signal conversion between light and electricity. The semiconductor chip 1 includes a transmission section 3 (for instance, a coil or an inductor) to transmit signals in a non-contact manner, and a connection section 4 (for instance, a bump) to electrically connect with the optical element.
Abstract translation: 提供一种半导体光互连装置，其能够在层叠半导体芯片之间的层叠半导体芯片之间传输信号，其结构是通过层叠了通过结合到光互连芯片而被高度功能化的半导体芯片。 半导体光互连装置包括半导体芯片1和光互连芯片2.光互连芯片2包括形成在其上的光学元件（例如，光敏元件，发光元件或光调制器），其具有 功能与光和电之间的信号转换有关。 半导体芯片1包括以非接触方式传输信号的传输部分3（例如，线圈或电感器）以及与光学元件电连接的连接部分4（例如，凸块）。
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公开(公告)号：US20100092132A1
公开(公告)日：2010-04-15
申请号：US12519693
申请日：2007-12-12
Applicant: Jun Ushida
Inventor： Jun Ushida
IPC: G02B6/28
CPC classification number: G02B6/125 , G02B6/1228 , G02B6/14 , G02B2006/12147
Abstract: A waveguide connecting structure includes a light branching element (111) for branching light from an input optical waveguide (201) including one core into two branched light components having the same optical power and the same phase, and a twin-arm waveguide (113) including a pair of arm waveguides (113A, 113B) for outputting the light components branched by the light branching element to a slot waveguide (202) including two cores arranged in parallel at a narrow spacing. The pair of arm waveguides have cores formed in a cladding on a substrate and having a refractive index higher than that of the cladding, and are formed such that the spacing between them gradually narrows and becomes equal to the core spacing of the slot waveguide from the core input ends into which the branched light components enter toward the core output ends from which the light components are output to the slot waveguide.
Abstract translation: 波导连接结构包括：光分支元件（111），用于将包括一芯的输入光波导（201）的光分为具有相同光功率和相同相位的两个分支光分量;以及双臂波导（113） 包括用于将由光分支元件分支的光分量输出到包括以窄间隔平行布置的两个芯的狭槽波导（202）的一对臂波导（113A，113B）。 一对臂波导具有形成在基板上的包层中并且折射率高于包层的折射率的芯，并且形成为使得它们之间的间隔逐渐变窄并且变得等于槽波导的芯间距 其中分支光分量进入其中光分量被输出到槽波导的芯输出端的核心输入端。
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19.发明申请公开(公告)号：US20090142018A1
公开(公告)日：2009-06-04
申请号：US12320428
申请日：2009-01-26
Applicant: Akiko Gomyo , Jun Ushida
Inventor： Akiko Gomyo , Jun Ushida
IPC: G02B6/26
CPC classification number: B82Y20/00 , G02B6/1225 , G02B6/1228
Abstract: Disclosed in a method and a device in which a wave number of light in the waveguide mode of a photonic crystal optical waveguide is matched with that of the incident light, or a intensity ratio of electric field to magnetic field of the light in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light, and furthermore, in addition to the method above, the distribution of light intensity on the incident end surface in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light. A photonic crystal optical waveguide and channel optical waveguide are joined together, and the structure of the channel optical waveguide is wedge shaped in the joint section.
Abstract translation: 公开了一种方法和装置，其中光子晶体光波导的波导模式中的波数与入射光的波数相匹配，或波导模式中的光的电场与磁场的强度比 光子晶体光波导的光强度与入射光的匹配，此外，除了上述方法之外，光子晶体光波导的波导模式中的入射端面上的光强度分布与 事件光。 光子晶体光波导和通道光波导连接在一起，并且通道光波导的结构在接合部分是楔形的。
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公开(公告)号：US08873895B2
公开(公告)日：2014-10-28
申请号：US13582841
申请日：2011-03-01
Applicant: Junichi Fujikata , Motofumi Saitoh , Jun Ushida , Akio Toda
Inventor： Junichi Fujikata , Motofumi Saitoh , Jun Ushida , Akio Toda
Abstract: To provide an optical modulator having a reduced size and reduced power consumption and capable of being easily connected to a waveguide and a method of manufacturing the optical modulator. The optical modulator has at least semiconductor layer (8) having a rib-shaped portion and doped so as to be of a first conduction type, dielectric layer (11) laid on first-conduction-type semiconductor layer (8), and semiconductor layer (9) laid on dielectric layer (11), having the width at the side opposite from dielectric layer (11) increased relative to the width of the rib-shaped portion, and doped so as to be of a second conduction type.
Abstract translation: 提供具有减小的尺寸和降低的功率消耗并且能够容易地连接到波导的光学调制器和制造光学调制器的方法。 光调制器至少具有肋状部分并掺杂成第一导电类型的半导体层（8），布置在第一导电型半导体层（8）上的电介质层（11）和半导体层 放置在电介质层（11）上的与介电层（11）相对的宽度相对于肋状部分的宽度增加并且掺杂成第二导电类型的放电层（9）。
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