公开(公告)号：US20060039649A1

公开(公告)日：2006-02-23

申请号：US11224320

申请日：2005-09-13

申请人： Akiko Gomyo ,  Jun Ushida

发明人： Akiko Gomyo ,  Jun Ushida

IPC分类号： G02B6/26 ,  G02B6/10

CPC分类号： B82Y20/00 ,  G02B6/1225 ,  G02B6/1228

摘要： Disclosed in a method and a device in which a wave number of light in the waveguide mode of a photonic crystal optical waveguide is matched with that of the incident light, or a intensity ratio of electric field to magnetic field of the light in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light, and furthermore, in addition to the method above, the distribution of light intensity on the incident end surface in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light. A photonic crystal optical waveguide and channel optical waveguide are joined together, and the structure of the channel optical waveguide is wedge shaped in the joint section.

摘要翻译： 公开了一种方法和装置，其中光子晶体光波导的波导模式中的波数与入射光的波数相匹配，或波导模式中的光的电场与磁场的强度比 光子晶体光波导的光强度与入射光的匹配，此外，除了上述方法之外，光子晶体光波导的波导模式中的入射端面上的光强度分布与 事件光。 光子晶体光波导和通道光波导连接在一起，并且通道光波导的结构在接合部分是楔形的。

公开(公告)号：US5309466A

公开(公告)日：1994-05-03

申请号：US932940

申请日：1992-08-21

申请人： Yoshiyasu Ueno ,  Hiroaki Fujii ,  Akiko Gomyo

发明人： Yoshiyasu Ueno ,  Hiroaki Fujii ,  Akiko Gomyo

IPC分类号： H01S5/183 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/18308 ,  H01S2301/14 ,  H01S5/18355 ,  H01S5/2059 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/3404 ,  H01S5/34326

摘要： In a semiconductor laser, an active layer includes a semiconductor layer having the ordered structure along the [-1,1,1] direction or along the [1,-1,1] direction. By the action of the ordered structure, the electric vector of the recombination light generated in the active layer is concentrated in the (-1,1,1) plane or the (1,-1,1) plane. Alternatively, the semiconductor layer has not only the ordered structure along the [-1,1,1] direction or along the [1,-1,1] direction, but also the compressive strain in the (0,0,1) plane. By the action of the ordered structure and the compressive strain, the recombination light generated in the active layer is emitted in the (1,1,0) plane. As a result, the recombination light effectively gives a gain to the oscillation mode. Thus, the oscillation threshold current of the semiconductor laser is reduced, and the laser characteristics is improved.

摘要翻译： 在半导体激光器中，有源层包括具有沿[-1,1,1]方向或沿[1，-1,1]方向的有序结构的半导体层。 通过有序结构的作用，在有源层中产生的复合光的电矢量集中在（-1,1,1）面或（1，-1,1）面。 或者，半导体层不仅具有沿[-1,1,1]方向或沿[1，-1,1]方向的有序结构，而且还具有（0,0,1）平面中的压缩应变 。 通过有序结构和压缩应变的作用，在有效层中产生的复合光在（1,1,0）平面内发射。 结果，复合光有效地提供了振荡模式的增益。 因此，半导体激光器的振荡阈值电流降低，激光特性提高。

公开(公告)号：US5612550A

公开(公告)日：1997-03-18

申请号：US395500

申请日：1995-02-24

申请人： Akiko Gomyo ,  Tohru Suzuki

发明人： Akiko Gomyo ,  Tohru Suzuki

IPC分类号： C30B29/68 ,  H01L29/15 ,  H01L29/201 ,  H01L31/10 ,  H01L33/04 ,  H01L33/08 ,  H01L33/16 ,  H01L33/30 ,  H01S5/00 ,  H01S5/026 ,  H01S5/32 ,  H01S5/323 ,  H01L31/0328 ,  H01S3/19 ,  H01S3/30

CPC分类号： H01S5/3235 ,  B82Y10/00 ,  H01L29/158 ,  H01L29/201 ,  H01L33/16 ,  H01S2302/00 ,  H01S5/3207 ,  H01S5/32325 ,  H01S5/32391

摘要： A heterojunction semiconductor device has a plurality of ordered phase alloy layers. Either the whole or a part of each of the ordered phase alloy layers has a crystal structure (triple-period structure) in which the ordered alloy is of a composition corresponding to the [111]A direction and an anion composition modulation period that is triple that of a disordered structure. The double-period structure may alternatively be used. The triple-period or double-period structure applied to the layer structure of the heterostructure semiconductor device results in a reduction of the bandgap.

摘要翻译： 异质结半导体器件具有多个有序相合金层。 每个有序相合金层的全部或一部分具有其中有序合金具有对应于[111] A方向的组成的晶体结构（三周期结构），并且阴离子组成调节周期为三倍 那是无序的结构。 可以替代地使用双周期结构。 施加到异质结构半导体器件的层结构的三周期或双周期结构导致带隙的减小。

公开(公告)号：US4974231A

公开(公告)日：1990-11-27

申请号：US299389

申请日：1989-01-23

申请人： Akiko Gomyo

发明人： Akiko Gomyo

IPC分类号： C30B23/08 ,  C30B25/18 ,  C30B29/40 ,  H01L21/205 ,  H01S5/00 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323

CPC分类号： H01L33/0062 ,  H01S5/32325 ,  H01S5/2231 ,  H01S5/3202

摘要： In a visible light semiconductor laser with (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P (0.ltoreq.x .ltoreq.1) crystal layers and a process for growing an(Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P (0.ltoreq.x.ltoreq.1) crystal, a GaAs substrate on which (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P is grown in an epitaxial method selected from MOVPE and MBE provides one selected from a (110) plane, a plane equivalent to the (110) plane, a (111) plane, and a plane equivalent to the (111) plane as a main plane for a crystal growth of (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P. As a result, a bandgap energy Eg of the (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P crystal can be the maximum value inherent to the mixed crystal independent on a growth temperature and a V/III ratio.

公开(公告)号：US07949212B2

公开(公告)日：2011-05-24

申请号：US12522245

申请日：2007-10-24

申请人： Akiko Gomyo

发明人： Akiko Gomyo

IPC分类号： G02B6/26 ,  G02B6/42 ,  G02B5/30

CPC分类号： G02B6/126 ,  G02B6/125

摘要： Disclosed is an optical waveguide element that includes first and second optical waveguides (11, 12) which are formed to have different waveguide modes of guided lights, whose polarized waves are different. First optical waveguide (11) includes directional coupling region (13) and, second optical waveguide (12) includes incident side waveguide (12a), which has directional coupling region (13) and which is provided in parallel with first optical waveguide (11), and second optical waveguide (12) includes exit side waveguide (12b), which is extended from incident side waveguide (12a) and which is bent in the direction that recedes from first optical waveguide (11).

摘要翻译： 公开了一种光波导元件，其包括第一和第二光波导（11,12），其形成为具有不同的导光的波导模式，其偏振波是不同的。 第一光波导（11）包括定向耦合区域（13），并且第二光波导（12）包括具有方向耦合区域（13）并且与第一光波导（11）平行设置的入射侧波导（12a） ，并且第二光波导（12）包括从入射侧波导（12a）延伸并且沿着从第一光波导（11）后退的方向弯曲的出射侧波导（12b）。

公开(公告)号：US07778509B2

公开(公告)日：2010-08-17

申请号：US11224320

申请日：2005-09-13

申请人： Akiko Gomyo ,  Jun Ushida

发明人： Akiko Gomyo ,  Jun Ushida

IPC分类号： G02B6/26

CPC分类号： B82Y20/00 ,  G02B6/1225 ,  G02B6/1228

摘要： Disclosed in a method and a device in which a wave number of light in the waveguide mode of a photonic crystal optical waveguide is matched with that of the incident light, or a intensity ratio of electric field to magnetic field of the light in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light, and furthermore, in addition to the method above, the distribution of light intensity on the incident end surface in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light. A photonic crystal optical waveguide and channel optical waveguide are joined together, and the structure of the channel optical waveguide is wedge shaped in the joint section.

摘要翻译： 公开了一种方法和装置，其中光子晶体光波导的波导模式中的波数与入射光的波数相匹配，或波导模式中的光的电场与磁场的强度比 光子晶体光波导的光强度与入射光的匹配，此外，除了上述方法之外，光子晶体光波导的波导模式中的入射端面上的光强度分布与 事件光。 光子晶体光波导和通道光波导连接在一起，并且通道光波导的结构在接合部分是楔形的。

公开(公告)号：US6165264A

公开(公告)日：2000-12-26

申请号：US801249

申请日：1997-02-19

申请人： Kikuo Makita ,  Akiko Gomyo

发明人： Kikuo Makita ,  Akiko Gomyo

IPC分类号： H01L21/20 ,  H01L21/203 ,  C30B25/04

CPC分类号： H01L21/02546 ,  H01L21/0262 ,  H01L21/02639

摘要： The invention provides a method for selective growth of semiconductor crystals, including the step of forming a semiconductor layer in a selected region of a semiconductor substrate by using a mask, the semiconductor layer being controlled with respect to atomic ordering or natural super lattice (NSL). It is possible by the invention to control the energy gap, optical anisotropy and electrically conductive anisotropy of a semiconductor layer, and also possible by the invention to carry out two-dimensional control of material properties in a substrate in accordance with a pattern of a mask.

摘要翻译： 本发明提供一种选择性生长半导体晶体的方法，包括通过使用掩模在半导体衬底的选定区域中形成半导体层的步骤，半导体层相对于原子排序或天然超晶格（NSL）进行控制， 。 通过本发明可以控制半导体层的能隙，光学各向异性和导电各向异性，并且本发明也可以根据掩模的图案对衬底中的材料特性进行二维控制 。

公开(公告)号：US20090142018A1

公开(公告)日：2009-06-04

申请号：US12320428

申请日：2009-01-26

申请人： Akiko Gomyo ,  Jun Ushida

发明人： Akiko Gomyo ,  Jun Ushida

IPC分类号： G02B6/26

CPC分类号： B82Y20/00 ,  G02B6/1225 ,  G02B6/1228

摘要： Disclosed in a method and a device in which a wave number of light in the waveguide mode of a photonic crystal optical waveguide is matched with that of the incident light, or a intensity ratio of electric field to magnetic field of the light in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light, and furthermore, in addition to the method above, the distribution of light intensity on the incident end surface in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light. A photonic crystal optical waveguide and channel optical waveguide are joined together, and the structure of the channel optical waveguide is wedge shaped in the joint section.

摘要翻译： 公开了一种方法和装置，其中光子晶体光波导的波导模式中的波数与入射光的波数相匹配，或波导模式中的光的电场与磁场的强度比 光子晶体光波导的光强度与入射光的匹配，此外，除了上述方法之外，光子晶体光波导的波导模式中的入射端面上的光强度分布与 事件光。 光子晶体光波导和通道光波导连接在一起，并且通道光波导的结构在接合部分是楔形的。

公开(公告)号：US20100074571A1

公开(公告)日：2010-03-25

申请号：US12522245

申请日：2007-10-24

申请人： Akiko Gomyo

发明人： Akiko Gomyo

IPC分类号： G02B5/30 ,  G02B6/00

CPC分类号： G02B6/126 ,  G02B6/125

摘要： Disclosed is an optical waveguide element that includes first and second optical waveguides (11, 12) which are formed to have different waveguide modes of guided lights, whose polarized waves are different. First optical waveguide (11) includes directional coupling region (13) and, second optical waveguide (12) includes incident side waveguide (12a), which has directional coupling region (13) and which is provided in parallel with first optical waveguide (11), and second optical waveguide (12) includes exit side waveguide (12b), which is extended from incident side waveguide (12a) and which is bent in the direction that recedes from first optical waveguide (11).

摘要翻译： 公开了一种光波导元件，其包括第一和第二光波导（11,12），其形成为具有不同的导光的波导模式，其偏振波是不同的。 第一光波导（11）包括定向耦合区域（13），并且第二光波导（12）包括具有方向耦合区域（13）并且与第一光波导（11）平行设置的入射侧波导（12a） ，并且第二光波导（12）包括从入射侧波导（12a）延伸并且沿着从第一光波导（11）后退的方向弯曲的出射侧波导（12b）。