公开(公告)号：US07778509B2

公开(公告)日：2010-08-17

申请号：US11224320

申请日：2005-09-13

Applicant: Akiko Gomyo ,  Jun Ushida

Inventor： Akiko Gomyo ,  Jun Ushida

IPC: G02B6/26

CPC classification number: B82Y20/00 ,  G02B6/1225 ,  G02B6/1228

Abstract: Disclosed in a method and a device in which a wave number of light in the waveguide mode of a photonic crystal optical waveguide is matched with that of the incident light, or a intensity ratio of electric field to magnetic field of the light in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light, and furthermore, in addition to the method above, the distribution of light intensity on the incident end surface in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light. A photonic crystal optical waveguide and channel optical waveguide are joined together, and the structure of the channel optical waveguide is wedge shaped in the joint section.

Abstract translation: 公开了一种方法和装置，其中光子晶体光波导的波导模式中的波数与入射光的波数相匹配，或波导模式中的光的电场与磁场的强度比 光子晶体光波导的光强度与入射光的匹配，此外，除了上述方法之外，光子晶体光波导的波导模式中的入射端面上的光强度分布与 事件光。 光子晶体光波导和通道光波导连接在一起，并且通道光波导的结构在接合部分是楔形的。

公开(公告)号：US20060039649A1

公开(公告)日：2006-02-23

申请号：US11224320

申请日：2005-09-13

Applicant: Akiko Gomyo ,  Jun Ushida

Inventor： Akiko Gomyo ,  Jun Ushida

IPC: G02B6/26 ,  G02B6/10

CPC classification number: B82Y20/00 ,  G02B6/1225 ,  G02B6/1228

Abstract: Disclosed in a method and a device in which a wave number of light in the waveguide mode of a photonic crystal optical waveguide is matched with that of the incident light, or a intensity ratio of electric field to magnetic field of the light in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light, and furthermore, in addition to the method above, the distribution of light intensity on the incident end surface in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light. A photonic crystal optical waveguide and channel optical waveguide are joined together, and the structure of the channel optical waveguide is wedge shaped in the joint section.

Abstract translation: 公开了一种方法和装置，其中光子晶体光波导的波导模式中的波数与入射光的波数相匹配，或波导模式中的光的电场与磁场的强度比 光子晶体光波导的光强度与入射光的匹配，此外，除了上述方法之外，光子晶体光波导的波导模式中的入射端面上的光强度分布与 事件光。 光子晶体光波导和通道光波导连接在一起，并且通道光波导的结构在接合部分是楔形的。

公开(公告)号：US20090142018A1

公开(公告)日：2009-06-04

申请号：US12320428

申请日：2009-01-26

Applicant: Akiko Gomyo ,  Jun Ushida

Inventor： Akiko Gomyo ,  Jun Ushida

IPC: G02B6/26

CPC classification number: B82Y20/00 ,  G02B6/1225 ,  G02B6/1228

Abstract: Disclosed in a method and a device in which a wave number of light in the waveguide mode of a photonic crystal optical waveguide is matched with that of the incident light, or a intensity ratio of electric field to magnetic field of the light in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light, and furthermore, in addition to the method above, the distribution of light intensity on the incident end surface in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light. A photonic crystal optical waveguide and channel optical waveguide are joined together, and the structure of the channel optical waveguide is wedge shaped in the joint section.

Abstract translation: 公开了一种方法和装置，其中光子晶体光波导的波导模式中的波数与入射光的波数相匹配，或波导模式中的光的电场与磁场的强度比 光子晶体光波导的光强度与入射光的匹配，此外，除了上述方法之外，光子晶体光波导的波导模式中的入射端面上的光强度分布与 事件光。 光子晶体光波导和通道光波导连接在一起，并且通道光波导的结构在接合部分是楔形的。

公开(公告)号：US20130064491A1

公开(公告)日：2013-03-14

申请号：US13582841

申请日：2011-03-01

Applicant: Junichi Fujikata ,  Motofumi Saitoh ,  Jun Ushida ,  Akio Toda

Inventor： Junichi Fujikata ,  Motofumi Saitoh ,  Jun Ushida ,  Akio Toda

IPC: G02F1/035 ,  H01L21/02

CPC classification number: G02F1/035 ,  G02F1/025 ,  H01L21/02

Abstract: To provide an optical modulator having a reduced size and reduced power consumption and capable of being easily connected to a waveguide and a method of manufacturing the optical modulator. The optical modulator has at least semiconductor layer (8) having a rib-shaped portion and doped so as to be of a first conduction type, dielectric layer (11) laid on first-conduction-type semiconductor layer (8), and semiconductor layer (9) laid on dielectric layer (11), having the width at the side opposite from dielectric layer (11) increased relative to the width of the rib-shaped portion, and doped so as to be of a second conduction type.

Abstract translation: 提供具有减小的尺寸和降低的功率消耗并且能够容易地连接到波导的光学调制器和制造光学调制器的方法。 光调制器至少具有肋状部分并掺杂成第一导电类型的半导体层（8），布置在第一导电型半导体层（8）上的电介质层（11）和半导体层 放置在电介质层（11）上的与介电层（11）相对的宽度相对于肋状部分的宽度增加并且掺杂成第二导电类型的放电层（9）。

公开(公告)号：US08363989B2

公开(公告)日：2013-01-29

申请号：US12919461

申请日：2009-02-10

Applicant: Daisuke Okamoto ,  Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida

Inventor： Daisuke Okamoto ,  Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida

IPC: G02B6/12 ,  H01L21/02

CPC classification number: H01L25/0657 ,  H01L23/48 ,  H01L23/645 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L25/167 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06531 ,  H01L2225/06534 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/30107 ,  Y10T29/41 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Provided is a semiconductor optical interconnection device capable of transmitting signals between laminated semiconductor chips in a structure where semiconductor chips highly functionalized by being bonded to an optical interconnection chip are laminated. The semiconductor optical interconnection device includes a semiconductor chip 1 and an optical interconnection chip 2. The optical interconnection chip 2 includes an optical element formed thereon (for instance, a photo-sensitive element, a luminous element, or an optical modulator) which has a function relating to signal conversion between light and electricity. The semiconductor chip 1 includes a transmission section 3 (for instance, a coil or an inductor) to transmit signals in a non-contact manner, and a connection section 4 (for instance, a bump) to electrically connect with the optical element.

Abstract translation: 提供一种半导体光互连装置，其能够在层叠半导体芯片之间的层叠半导体芯片之间传输信号，其结构是通过层叠了通过结合到光互连芯片而被高度功能化的半导体芯片。 半导体光互连装置包括半导体芯片1和光互连芯片2.光互连芯片2包括形成在其上的光学元件（例如，光敏元件，发光元件或光调制器），其具有 功能与光和电之间的信号转换有关。 半导体芯片1包括以非接触方式传输信号的传输部分3（例如，线圈或电感器）以及与光学元件电连接的连接部分4（例如，凸块）。

公开(公告)号：US20100320496A1

公开(公告)日：2010-12-23

申请号：US12919546

申请日：2009-02-26

Applicant: Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto

Inventor： Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto

IPC: H01L33/62

CPC classification number: G02B6/12002 ,  G02B6/43 ,  H01L21/76898 ,  H01L23/481 ,  H01L2224/05 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/08145 ,  H01L2224/80001 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: A semiconductor device comprises a semiconductor layer having a semiconductor integrated circuit, which is for processing an electrical signal, on a semiconductor substrate and an optical interconnect layer for transmitting an optical signal are joined. Control of modulation of the optical signal transmitted in the optical interconnect layer is performed by an electrical signal from the semiconductor layer, and an electrical signal generated by reception of light in the optical interconnect layer is transmitted to the semiconductor layer. The optical interconnect layer is disposed on the underside of the semiconductor substrate.

Abstract translation: 半导体器件包括具有用于处理电信号的半导体集成电路的半导体层，半导体衬底和用于发射光信号的光互连层的半导体层。 通过来自半导体层的电信号执行在光学互连层中发送的光信号的调制的控制，并且通过在光学互连层中的光的接收而产生的电信号被传输到半导体层。 光学互连层设置在半导体衬底的下侧。

公开(公告)号：US07359606B2

公开(公告)日：2008-04-15

申请号：US10543649

申请日：2003-12-22

Applicant: Jun Ushida ,  Hirohito Yamada

Inventor： Jun Ushida ,  Hirohito Yamada

IPC: G02B6/10

CPC classification number: G02F1/365 ,  G02F1/3515 ,  G02F2202/32

Abstract: In an optical circuit including multi-dimensional photonic crystals, in which the optical circuit has a structure (33), such as a light emitting member or a light receiving member, having a natural resonance frequency, another structure (34) having a natural resonance frequency slightly differing from the natural resonance frequency of the structure (33) is arranged in the vicinity of the structure (33) to control the directivity of localization and propagation of an electromagnetic field, light emission and light reception in a spatial region including the above structures in the multi-dimensional photonic crystals, in order to permit functional operations to be realized.

Abstract translation: 在包括多维光子晶体的光电路中，其中光电路具有具有天然共振频率的诸如发光部件或光接收部件的结构（33），具有天然共振的另一结构（34） 与结构（33）的固有谐振频率稍微不同的频率被布置在结构（33）附近，以控制包括上述的空间区域中的电磁场，发光和光接收的定位和传播的方向性 多维光子晶体中的结构，以便实现功能操作。

公开(公告)号：US09002144B2

公开(公告)日：2015-04-07

申请号：US13395329

申请日：2010-06-08

Applicant: Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

Inventor： Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

IPC: G02F1/035 ,  G02F1/225 ,  G02F1/025 ,  G02F1/015

CPC classification number: G02F1/2257 ,  G02F1/025 ,  G02F2001/0152 ,  G02F2201/066 ,  G02F2201/07 ,  G02F2202/105

Abstract: A downsized, low-power electro-optical modulator that achieves reducing both of the additional resistance in the modulation portion and the optical loss each caused by electrodes at the same time is provided. The electro-optical modulator includes a rib waveguide formed by stacking a second semiconductor layer 9 having a different conductivity type from a first semiconductor layer 8 on the first semiconductor layer 8 via a dielectric film 11, and the semiconductor layers 8 and 9 are connectable to an external terminal via highly-doped portions 4 and 10, respectively. In a region in the vicinity of contact surfaces of the semiconductor layers 8 and 9 with the dielectric film 11, a free carrier is accumulated, removed, or inverted by an electrical signal from the external terminal, and whereby a concentration of the free carrier in an electric field region of an optical signal is modulated, so that a phase of the optical signal can be modulated. At least one of the semiconductor layers 8 and 9 is wider than the stacked portion. At least one of the highly-doped portions 4 and 10 is formed outside the stacked portion.

Abstract translation: 提供了一种小型化的低功率电光调制器，其实现了减少调制部分中的附加电阻和由电极同时引起的光损耗。 电光调制器包括通过电介质膜层叠具有与第一半导体层8上的第一半导体层8不同的导电类型的第二半导体层9形成的肋波导，并且半导体层8和9可连接到 分别经由高掺杂部分4和10的外部端子。 在具有电介质膜11的半导体层8和9的接触表面附近的区域中，通过来自外部端子的电信号累积，去除或反转自由载流子，并且由此使自由载流子的浓度 调制光信号的电场区域，使得可以调制光信号的相位。 半导体层8和9中的至少一个比层叠部分宽。 高度掺杂部分4和10中的至少一个形成在堆叠部分的外部。

公开(公告)号：US08936962B2

公开(公告)日：2015-01-20

申请号：US13256087

申请日：2010-02-15

Applicant: Junichi Fujikata ,  Toshio Baba ,  Jun Ushida

Inventor： Junichi Fujikata ,  Toshio Baba ,  Jun Ushida

IPC: H01L27/15 ,  G02F1/025 ,  G02F1/225

CPC classification number: G02F1/025 ,  G02F1/2257

Abstract: An optical modulator according to the present invention is configured at least by a semiconductor layer subjected to a doping process so as to exhibit a first conductivity type, and a semiconductor layer subjected to a doping process so as to exhibit a second conductivity type. Further, in the optical modulator, at least the first conductivity type semiconductor layer, a dielectric layer, the second conductivity type semiconductor layer, and a transparent electrode optically transparent in at least a near-infrared wavelength region are laminated in order.

Abstract translation: 根据本发明的光调制器至少由经受掺杂工艺的半导体层构成以呈现第一导电类型，以及经受掺杂工艺以显示第二导电类型的半导体层。 此外，在光调制器中，依次层叠至少第一导电型半导体层，电介质层，第二导电型半导体层和在至少近红外波长区域中透光的透明电极。

公开(公告)号：US08483520B2

公开(公告)日：2013-07-09

申请号：US13202680

申请日：2010-02-18

Applicant: Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

Inventor： Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

IPC: G02F1/025

CPC classification number: G02F1/025

Abstract: An optical modulation structure includes a lower cladding layer (102), a first silicon layer (103) integrally formed from silicon of a first conductivity type on the lower cladding layer (102) while including a core (104) and slab regions (105) arranged on both sides of the core (104) and connected to the core, a concave portion (104a) formed in an upper surface of the core (104), and a second silicon layer (109) of a second conductivity type formed on a dielectric layer (108) in the concave portion (104a) so as to fill the concave portion (104a).

Abstract translation: 光调制结构包括下包层（102），在下包层（102）上由第一导电类型的硅整体形成的第一硅层（103），同时包括芯（104）和板区（105） 布置在芯体（104）的两侧并连接到芯部，形成在芯部（104）的上表面中的凹部（104a）和形成在芯体（104）上的第二导电类型的第二硅层（109） 在凹部（104a）中的介电层（108），以填充凹部（104a）。