公开(公告)号：US20060046369A1

公开(公告)日：2006-03-02

申请号：US11210681

申请日：2005-08-25

申请人： Hisanori Ihara ,  Nagataka Tanaka ,  Hiroshige Goto

发明人： Hisanori Ihara ,  Nagataka Tanaka ,  Hiroshige Goto

IPC分类号： H01L21/76 ,  H01L21/8238

CPC分类号： H01L27/14609 ,  H01L27/14601 ,  H01L27/14689

摘要： A solid-state image sensor having a well of a first conductivity type; a photoelectric conversion region having a second conductivity type formed in the well storing charges obtained from a photoelectric conversion; a drain region having the second conductivity type formed in the well apart from a surface of the well; and a gate electrode formed on the surface of the well via a gate insulator, the gate electrode transferring the charges from the photoelectric conversion region to the drain region. Alternatively, a transistor includes a first semiconductor region having a first conductivity type; second and third semiconductor regions having a second conductivity type formed in the first semiconductor region, the second and third semiconductor regions being separated from each other by a portion of the first semiconductor region serving as a channel region; an insulator layer provided on a surface of the first semiconductor region in contact with the channel region; a gate electrode provided on the insulator layer; and the first semiconductor region includes a shield semiconductor region of the first conductivity type disposed between the surface of the first semiconductor region and at least one of the second and third semiconductor regions such that the at least one of the second and third semiconductor regions is sandwiched between the shield region and the first semiconductor region.

摘要翻译： 一种具有第一导电类型的阱的固态图像传感器; 在由光电转换得到的储存电荷中形成的具有第二导电类型的光电转换区; 具有第二导电类型的漏极区域形成在与阱的表面分离的井中; 以及通过栅极绝缘体在阱的表面上形成的栅电极，栅电极将电荷从光电转换区域传送到漏区。 或者，晶体管包括具有第一导电类型的第一半导体区域; 具有形成在第一半导体区域中的第二导电类型的第二和第三半导体区域，第二和第三半导体区域被用作沟道区域的第一半导体区域的一部分彼此分离; 设置在与所述沟道区域接触的所述第一半导体区域的表面上的绝缘体层; 设置在所述绝缘体层上的栅电极; 并且第一半导体区域包括设置在第一半导体区域的表面和第二和第三半导体区域中的至少一个之间的第一导电类型的屏蔽半导体区域，使得第二和第三半导体区域中的至少一个被夹在 在所述屏蔽区域和所述第一半导体区域之间。

公开(公告)号：US5506429A

公开(公告)日：1996-04-09

申请号：US208750

申请日：1994-03-11

申请人： Nagataka Tanaka ,  Nobuo Nakamura ,  Yoshiyuki Matsunaga ,  Shinji Ohsawa ,  Michio Sasaki ,  Hirofumi Yamashita ,  Ryohei Miyagawa

发明人： Nagataka Tanaka ,  Nobuo Nakamura ,  Yoshiyuki Matsunaga ,  Shinji Ohsawa ,  Michio Sasaki ,  Hirofumi Yamashita ,  Ryohei Miyagawa

IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/357 ,  H04N5/3728 ,  H01L29/765

CPC分类号： H01L27/14831

摘要： A CCD imager has an array of rows and columns of picture elements on a semiconductor substrate. A vertical charge transfer gate section extends in a first direction on the substrate to be associated with the columns. The transfer gate section includes CCD channels in the substrate, and insulated transfer gate electrodes overlying these CCD channels. A plurality of buffer electrodes are formed at a first level over the substrate surface to overlie the transfer gate electrodes. A plurality of shunt wires are formed at a second level over the substrate surface to overlie the buffer electrodes. The charge transfer gate electrodes and the buffer electrodes are connected with each other by first contact holes. The buffer electrodes and the shunt wires are coupled together by second contact holes. The second contact holes are distributed so that the repeat period thereof as defined at least in a second direction transverse to the first direction on the substrate is equal to or less than two picture elements, whereby their spatial frequency at least in the second direction is half the sampling frequency of photoconversion in the CCD imager, or more.

摘要翻译： CCD成像器在半导体衬底上具有一列行和列的像素。 垂直电荷转移栅极部分在衬底上的第一方向上延伸以与柱相关联。 传输门部分包括衬底中的CCD通道，以及覆盖这些CCD通道的绝缘传输栅电极。 多个缓冲电极形成在衬底表面上的第一层上以覆盖传输栅电极。 在衬底表面上的第二层上形成多个分流电线以覆盖缓冲电极。 电荷转移栅电极和缓冲电极通过第一接触孔相互连接。 缓冲电极和并联线通过第二接触孔耦合在一起。 分布第二接触孔，使得其至少沿与衬底上的第一方向横切的第二方向限定的重复周期等于或小于两个图像元素，由此其至少在第二方向上的空间频率为一半 CCD成像仪中光电转换的采样频率，或更多。

公开(公告)号：US08754493B2

公开(公告)日：2014-06-17

申请号：US13558495

申请日：2012-07-26

申请人： Nagataka Tanaka

发明人： Nagataka Tanaka

IPC分类号： H01L31/0232

CPC分类号： G02B3/0056 ,  H01L27/14605 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14685 ,  H04N5/2257

摘要： A solid-state imaging device includes light receiving sections which are arranged in an image area on a semiconductor substrate at the same pitch and which light exiting from an imaging optical system enters, condensing lenses respectively arranged above the light receiving sections, and light shielding sections each of which is provided at one end of each of the light receiving sections. The condensing lenses are arranged in a peripheral portion in a first direction in the image area at a first pitch, and arranged in a peripheral portion in a second direction opposite the first direction at a second pitch which is smaller than the first pitch.

摘要翻译： 固态成像装置包括：光接收部，其以相同的间距配置在半导体基板的图像区域中，从成像光学系统射出的光入射到分别配置在受光部上方的聚光透镜;以及遮光部 其每一个设置在每个光接收部分的一端。 聚光透镜以第一间距在图像区域中沿第一方向布置在周边部分中，并且以比第一间距小的第二间距以与第一方向相反的第二方向布置在周边部分中。

公开(公告)号：US20110234871A1

公开(公告)日：2011-09-29

申请号：US13052182

申请日：2011-03-21

申请人： Hisayuki TARUKI ,  Nagataka Tanaka

发明人： Hisayuki TARUKI ,  Nagataka Tanaka

IPC分类号： H04N5/335

CPC分类号： H04N5/3559 ,  H01L27/14609 ,  H04N5/3698

摘要： According to one embodiment, the pixel driving circuit causes the amplifying transistor to form a source follower circuit without applying a bias voltage to the vertical signal line and connects the FD to the power source. Thereafter, the pixel driving circuit separates the current source from the vertical signal line to cancel the source follower circuit, applies a bias voltage to the vertical signal line so that the voltage of the FD is raised when the brightness of the subject is higher than the reference value, and the voltage of the FD is lowered when the brightness of the subject is lower than the reference value, and turns on the read transistor. The pixel driving circuit turns off the read transistor, and then connects the current source to the vertical signal line, and causes the amplifying transistor to form the source follower circuit.

摘要翻译： 根据一个实施例，像素驱动电路使放大晶体管形成源极跟随器电路，而不向垂直信号线施加偏置电压，并将FD连接到电源。 此后，像素驱动电路将电流源与垂直信号线分离以抵消源极跟随器电路，向垂直信号线施加偏置电压，使得当被摄体的亮度高于 参考值，并且当被摄体的亮度低于参考值时，FD的电压降低，并且接通读取的晶体管。 像素驱动电路关闭读取晶体管，然后将电流源连接到垂直信号线，并使放大晶体管形成源极跟随器电路。

公开(公告)号：US07696547B2

公开(公告)日：2010-04-13

申请号：US11210681

申请日：2005-08-25

申请人： Hisanori Ihara ,  Nagataka Tanaka ,  Hiroshige Goto

发明人： Hisanori Ihara ,  Nagataka Tanaka ,  Hiroshige Goto

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14601 ,  H01L27/14689

摘要： A solid-state image sensor having a well of a first conductivity type; a photoelectric conversion region having a second conductivity type formed in the well storing charges obtained from a photoelectric conversion; a drain region having the second conductivity type formed in the well apart from a surface of the well; and a gate electrode formed on the surface of the well via a gate insulator, the gate electrode transferring the charges from the photoelectric conversion region to the drain region. Alternatively, a transistor includes a first semiconductor region having a first conductivity type; second and third semiconductor regions having a second conductivity type formed in the first semiconductor region, the second and third semiconductor regions being separated from each other by a portion of the first semiconductor region serving as a channel region; an insulator layer provided on a surface of the first semiconductor region in contact with the channel region; a gate electrode provided on the insulator layer; and the first semiconductor region includes a shield semiconductor region of the first conductivity type disposed between the surface of the first semiconductor region and at least one of the second and third semiconductor regions such that the at least one of the second and third semiconductor regions is sandwiched between the shield region and the first semiconductor region.

摘要翻译： 一种具有第一导电类型的阱的固态图像传感器; 在由光电转换得到的储存电荷中形成的具有第二导电类型的光电转换区; 具有第二导电类型的漏极区域形成在与阱的表面分离的井中; 以及通过栅极绝缘体在阱的表面上形成的栅电极，栅电极将电荷从光电转换区域传送到漏区。 或者，晶体管包括具有第一导电类型的第一半导体区域; 具有形成在第一半导体区域中的第二导电类型的第二和第三半导体区域，第二和第三半导体区域被用作沟道区域的第一半导体区域的一部分彼此分离; 设置在与所述沟道区域接触的所述第一半导体区域的表面上的绝缘体层; 设置在所述绝缘体层上的栅电极; 并且第一半导体区域包括设置在第一半导体区域的表面和第二和第三半导体区域中的至少一个之间的第一导电类型的屏蔽半导体区域，使得第二和第三半导体区域中的至少一个被夹在 在所述屏蔽区域和所述第一半导体区域之间。

公开(公告)号：US20070108487A1

公开(公告)日：2007-05-17

申请号：US11558200

申请日：2006-11-09

申请人： Ikuko Inoue ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Nagataka Tanaka ,  Tetsuya Yamaguchi

发明人： Ikuko Inoue ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Nagataka Tanaka ,  Tetsuya Yamaguchi

IPC分类号： H01L31/113

CPC分类号： H01L27/14634 ,  H01L27/14609 ,  H01L27/1463

摘要： A solid-state image pickup device includes a semiconductor substrate including a substrate main body having P-type impurities and a first N-type semiconductor layer provided on the substrate main body, an image pickup area including a plurality of photoelectric converters in which the plurality of photoelectric converters include second N-type semiconductor layers, the second N-type semiconductor layers being provided on a surface portion of the first N-type semiconductor layer independently of one another, and a first peripheral circuit area including a first P-type semiconductor layer formed on the first N-type semiconductor layer. The solid-state image pickup device further includes a second peripheral circuit area including a second P-type semiconductor layer formed on the first N-type semiconductor layer and connected to the substrate main body.

摘要翻译： 固态摄像装置包括：半导体衬底，包括具有P型杂质的衬底主体和设置在衬底主体上的第一N型半导体层;摄像区，包括多个光电转换器，其中多个 光电转换器包括第二N型半导体层，第二N型半导体层彼此独立地设置在第一N型半导体层的表面部分上，第一外围电路区域包括第一P型半导体 层，形成在第一N型半导体层上。 固体摄像装置还包括第二外围电路区域，其包括形成在第一N型半导体层上并连接到基板主体的第二P型半导体层。

公开(公告)号：US20050104094A1

公开(公告)日：2005-05-19

申请号：US10941898

申请日：2004-09-16

申请人： Nagataka Tanaka

发明人： Nagataka Tanaka

IPC分类号： H01L27/146 ,  H01L27/14 ,  H01L27/148 ,  H04N5/232 ,  H04N5/335 ,  H04N5/361 ,  H04N5/365 ,  H04N5/369 ,  H04N5/374

CPC分类号： H01L27/14806 ,  H01L27/14627

摘要： A solid-state imaging device has a photodiode provided in a semiconductor substrate of a first conductivity type. A diffusion layer of a second conductivity type is provided in the semiconductor substrate. A gate wiring layer is provided on the semiconductor substrate between the photodiode and the diffusion layer. A gate insulating film is interposed between the semiconductor substrate and the gate wiring layer. A wiring layer is provided on the semiconductor substrate at a position which faces the gate wiring layer across the photodiode. The wiring layer is adjacent to the photodiode.

摘要翻译： 固态成像装置具有设置在第一导电类型的半导体衬底中的光电二极管。 在半导体衬底中设置有第二导电类型的扩散层。 栅极布线层设置在半导体衬底上的光电二极管和扩散层之间。 栅极绝缘膜介于半导体衬底和栅极布线层之间。 布线层设置在半导体衬底上的跨越光电二极管的栅极布线层的位置。 布线层与光电二极管相邻。

公开(公告)号：US06674470B1

公开(公告)日：2004-01-06

申请号：US08933975

申请日：1997-09-19

申请人： Nagataka Tanaka ,  Eiji Oba ,  Keiji Mabuchi ,  Michio Sasaki ,  Ryohei Miyagawa ,  Hirofumi Yamashita ,  Yoshinori Iida ,  Hisanori Ihara ,  Tetsuya Yamaguchi

发明人： Nagataka Tanaka ,  Eiji Oba ,  Keiji Mabuchi ,  Michio Sasaki ,  Ryohei Miyagawa ,  Hirofumi Yamashita ,  Yoshinori Iida ,  Hisanori Ihara ,  Tetsuya Yamaguchi

IPC分类号： H04N314

CPC分类号： H04N5/3765 ,  H04N5/3575 ,  H04N5/37457

摘要： A solid state imaging device comprises a plurality of unit cells formed in a surface region of a semiconductor substrate. Each of the unit cells comprises a photoelectric converter, an MOS-type read-out transistor for reading a signal from the photoelectric converter, an MOS-type amplifying transistor having a gate connected to a drain of the read-out transistor and for amplifying the signal read by the read-out transistor, a reset transistor having a source connected to the drain of the read-out transistor and for resetting a potential of a gate of the amplifying transistor, and an addressing element connected in series to the amplifying transistor and for selecting the unit cell. The read-out transistor is formed in a first device region in the semiconductor substrate. The reset transistor is formed in a second device region in the semiconductor substrate. The drain of the read-out transistor is connected to the source of the reset transistor through a wiring layer formed on the surface of the semiconductor substrate.

摘要翻译： 固态成像装置包括形成在半导体衬底的表面区域中的多个单元电池。 每个单电池包括光电转换器，用于读取来自光电转换器的信号的MOS型读出晶体管，MOS型放大晶体管，其栅极连接到读出晶体管的漏极，并用于放大 由读出晶体管读取的信号，复位晶体管，其源极连接到读出晶体管的漏极，并用于复位放大晶体管的栅极的电位;以及寻址元件，串联连接到放大晶体管， 用于选择单元格。 读出晶体管形成在半导体衬底中的第一器件区域中。 复位晶体管形成在半导体衬底中的第二器件区域中。 读出晶体管的漏极通过形成在半导体衬底的表面上的布线层连接到复位晶体管的源极。

公开(公告)号：US09007502B2

公开(公告)日：2015-04-14

申请号：US12621798

申请日：2009-11-19

申请人： Nagataka Tanaka ,  Shinji Uya

发明人： Nagataka Tanaka ,  Shinji Uya

IPC分类号： H04N3/14 ,  H04N5/335 ,  H04N5/3745 ,  H04N5/378 ,  H01L27/146

CPC分类号： H04N5/3745 ,  H01L27/14609 ,  H04N5/37452 ,  H04N5/378

摘要： A solid-state imaging device includes a plurality of unit pixels. Each unit pixel has a photodiode, a reading transistor, a floating diffusion, a capacitance adding transistor, and a reset transistor. The reading transistor reads signal electric charges from the photodiode. The floating diffusion accumulates the signal electric charges read from the reading transistor. The capacitance adding transistor selectively adds capacitance to the floating diffusion. The reset transistor resets an electric potential of the floating diffusion.

摘要翻译： 固态成像装置包括多个单位像素。 每个单位像素具有光电二极管，读取晶体管，浮动扩散，电容添加晶体管和复位晶体管。 读取晶体管从光电二极管读取信号电荷。 浮动扩散积累从读取晶体管读取的信号电荷。 电容添加晶体管选择性地将电容添加到浮动扩散。 复位晶体管复位浮动扩散电位。

公开(公告)号：US08542304B2

公开(公告)日：2013-09-24

申请号：US13052145

申请日：2011-03-21

申请人： Motohiro Maeda ,  Hirofumi Yamashita ,  Nagataka Tanaka

发明人： Motohiro Maeda ,  Hirofumi Yamashita ,  Nagataka Tanaka

IPC分类号： H04N9/083 ,  H04N3/14 ,  H04N5/335 ,  H04N9/04

CPC分类号： H04N5/37457 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641 ,  H04N9/045

摘要： According to one embodiment, a solid-state imaging device includes first and second pixel portions, first and second transfer transistors, first and second accumulation portions, an element isolation region, first and second amplifier transistors, and a first and second signal lines. The first and second pixel portions include photoelectric conversion elements, respectively. The first and second transfer transistors transfer first and second charges photoelectrically converted by the first and second pixel portions, respectively. The first and second accumulation portions are interposed between the first and second pixel portions, and accumulate the first and second charges, respectively. The element isolation region is interposed between the first and second accumulation portions. The first and second amplifier transistors amplify voltages generated in accordance with the first and second charges accumulated in the first and second accumulation portions, respectively. The first and second signal lines output signal voltages amplify by the amplifier transistors, respectively.

摘要翻译： 根据一个实施例，固态成像装置包括第一和第二像素部分，第一和第二转移晶体管，第一和第二累积部分，元件隔离区域，第一和第二放大器晶体管以及第一和第二信号线。 第一和第二像素部分分别包括光电转换元件。 第一和第二转移晶体管分别转移由第一和第二像素部分光电转换的第一和第二电荷。 第一和第二累积部分被插入在第一和第二像素部分之间，分别积累第一和第二电荷。 元件隔离区域介于第一和第二累积部分之间。 第一和第二放大器晶体管分别放大根据积累在第一和第二累积部分中的第一和第二电荷产生的电压。 第一和第二信号线输出信号电压分别由放大器晶体管放大。