公开(公告)号：US20230422500A1

公开(公告)日：2023-12-28

申请号：US18172549

申请日：2023-02-22

Applicant: Kioxia Corporation

Inventor： Tomotaka ARIGA ,  Masayuki KITAMURA ,  Hiroshi TOYODA

IPC: H10B43/27

CPC classification number: H10B43/27

Abstract: A semiconductor device includes a plurality of insulating layers, a plurality of conductive layers that are formed alternately with the plurality of insulating layers, an interlayer film, and a channel. The interlayer film is different from the conductive layer, has a crystal structure of a hexagonal crystal system, and is formed between at least one of the insulating layers and at least one of the conductive layers. The channel penetrates through the plurality of conductive layers, the interlayer film, and the plurality of insulating layers.

公开(公告)号：US20230253311A1

公开(公告)日：2023-08-10

申请号：US18300700

申请日：2023-04-14

Applicant: Kioxia Corporation

Inventor： Masayuki KITAMURA ,  Atsushi KATO ,  Hiroaki MATSUDA

IPC: H01L23/522 ,  H01L23/532 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76843 ,  H01L23/53238

Abstract: A semiconductor device includes an interconnect including (i) a first layer, and (ii) a second layer provided on the first layer and including copper. The device also includes a plug provided on the interconnect and including (a) a third layer including titanium and nitrogen, and (b) a fourth layer provided on the third layer and including tungsten. A concentration of chlorine in the third layer is less than or equal to 5.0 × 1021 atoms/cm3, and a concentration of oxygen at the interface between the third layer and the fourth layer is less than or equal to 5.0 × 1021 atoms/cm3.

公开(公告)号：US20230088700A1

公开(公告)日：2023-03-23

申请号：US17643717

申请日：2021-12-10

Applicant: Kioxia Corporation

Inventor： Tomotaka ARIGA ,  Masayuki KITAMURA ,  Hiroshi TOYODA

IPC: H01L27/11582 ,  H01L21/28 ,  H01L29/49

Abstract: A semiconductor device that can have an improved data retention characteristic is provided. A semiconductor device includes a stacked body and a memory pillar formed in a memory hole of the stacked body. The memory pillar has a structure in which a semiconductor portion 61b, a tunnel insulating film 62a, and a charge storage layer 62b are sequentially stacked. A block insulating film 53 is provided between the charge storage layer 62b and a conductive layer 52. The conductive layer 52 contains molybdenum. The block insulating film 53 includes a silicon oxide film 53a and an aluminum oxide film 53b. A region from the conductive layer 52 to the aluminum oxide film 53b contains chlorine, which prevents OH diffusion. The concentration of chlorine at a second portion closer to the aluminum oxide film 53b than a first portion in the conductive layer 52 is higher than the concentration of impurities at the first portion in the conductive layer.

公开(公告)号：US20220076965A1

公开(公告)日：2022-03-10

申请号：US17190827

申请日：2021-03-03

Applicant: Kioxia Corporation

Inventor： Hiroaki MATSUDA ,  Masayuki KITAMURA

IPC: H01L21/3215 ,  H01L27/11582

Abstract: A semiconductor device includes a stacked body including a plurality of conductive layers insulated from each other, a semiconductor layer extending into the stacked body, and a charge storage layer located between one of the conductive layers and the semiconductor layer. The conductive layer contains tungsten and an auxiliary material. An amount of the auxiliary material is smaller than an amount of tungsten, and an oxide free energy of the auxiliary material is smaller than an oxide free energy of tungsten.

公开(公告)号：US20210305275A1

公开(公告)日：2021-09-30

申请号：US17004251

申请日：2020-08-27

Applicant: Kioxia Corporation

Inventor： Katsuaki NATORI ,  Hiroshi TOYODA ,  Masayuki KITAMURA ,  Takayuki BEPPU ,  Koji YAMAKAWA ,  Kenichiro TORATANI

IPC: H01L27/11582 ,  C23C16/06 ,  C23C16/56

Abstract: A semiconductor device includes a conductive film containing molybdenum and a metal element. The metal element has a melting point lower than the melting point of molybdenum and forms a complete solid solution with molybdenum. The metal element as a material for composing the conductive film is at least one selected from the group consisting of, for example, titanium, vanadium, and niobium.

公开(公告)号：US20250029836A1

公开(公告)日：2025-01-23

申请号：US18906979

申请日：2024-10-04

Applicant: Kioxia Corporation

Inventor： Masayuki KITAMURA

IPC: H01L21/02 ,  H01L29/24 ,  H01L29/49

Abstract: A semiconductor device according to an embodiment includes an oxide film containing first element and a conductive film provided to be in contact with the oxide film, containing metal element and oxygen element, and having conductivity. A range of a volume density of the oxygen element in the conductive film is different between cases where the metal element are tungsten (W), molybdenum (Mo), titanium (Ti), chromium (Cr), vanadium (V), iron (Fe), copper (Cu), tantalum (Ta), or niobium (Nb).

公开(公告)号：US20240178298A1

公开(公告)日：2024-05-30

申请号：US18463348

申请日：2023-09-08

Applicant: Kioxia Corporation

Inventor： Takayuki BEPPU ,  Hiroko TAHARA ,  Masayuki KITAMURA ,  Hiroshi TOYODA ,  Hiroyuki OHTORI

IPC: H01L29/49 ,  H01L23/528 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L29/495 ,  H01L23/5283 ,  H10B41/27 ,  H10B43/27

Abstract: In one embodiment, a semiconductor device includes a first layer including a metal element. The device further includes a first insulator that is in contact with the first layer and includes silicon and oxygen. The device further includes a second layer that is in contact with the first insulator and includes molybdenum or tungsten.

公开(公告)号：US20230093431A1

公开(公告)日：2023-03-23

申请号：US18072441

申请日：2022-11-30

Applicant: Kioxia Corporation

Inventor： Masayuki KITAMURA

IPC: H01L21/02 ,  H01L29/49

Abstract: A semiconductor device according to an embodiment includes an oxide film containing first element and a conductive film provided to be in contact with the oxide film, containing metal element and oxygen element, and having conductivity. A range of a volume density of the oxygen element in the conductive film is different between cases where the metal element are tungsten (W), molybdenum (Mo), titanium (Ti), chromium (Cr), vanadium (V), iron (Fe), copper (Cu), tantalum (Ta), or niobium (Nb).

公开(公告)号：US20220319842A1

公开(公告)日：2022-10-06

申请号：US17844333

申请日：2022-06-20

Applicant: KIOXIA CORPORATION

Inventor： Yuya MATSUBARA ,  Masayuki KITAMURA ,  Atsuko SAKATA

IPC: H01L21/02 ,  H01L21/285 ,  C23C16/32 ,  C23C16/50 ,  C23C16/30 ,  C23C16/52

Abstract: A substrate processing apparatus includes a chamber to accommodate a substrate. The apparatus includes a stage to support the substrate in the chamber. The apparatus includes an electrode disposed above the stage and containing aluminum. The electrode generates plasma from gas supplied into the chamber to form a first film on the substrate by the plasma. The apparatus further includes a second film formed on a surface of the electrode and containing aluminum and fluorine or containing aluminum and oxygen.

公开(公告)号：US20220085066A1

公开(公告)日：2022-03-17

申请号：US17459856

申请日：2021-08-27

Applicant: Kioxia Corporation

Inventor： Katsuaki NATORI ,  Hiroshi TOYODA ,  Koji YAMAKAWA ,  Takayuki BEPPU ,  Masayuki KITAMURA

IPC: H01L27/11582 ,  H01L27/11556

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes: (a) supplying an adsorbing material over an insulating film, wherein the adsorbing material is selected from the group consisting of H2O, HF, NO, NO2, NF3, and combinations thereof; (b) supplying a Mo material over the insulating film; (c) supplying a reducing agent over the insulating film; and (d) repeating the steps (a) to (c).