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公开(公告)号：US20220072473A1
公开(公告)日：2022-03-10
申请号：US17350912
申请日：2021-06-17
Applicant: Kioxia Corporation
Inventor： Yuya MATSUBARA
Abstract: According to one embodiment, a gas recovering apparatus includes a casing and a tube. The casing is provided with an inlet through which a gas flows in, a first outlet for discharging a first gas containing a gas to be recovered of the gas, and a second outlet for discharging a second gas other than the first gas of the gas. The casing is evacuated via the first outlet. The tube is provided in the casing from the inlet to the second outlet, and has a high permeability to the first gas and a low permeability to the second gas.
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2.发明公开公开(公告)号：US20240068094A1
公开(公告)日：2024-02-29
申请号：US18454234
申请日：2023-08-23
Applicant: Kioxia Corporation
Inventor： Yuya MATSUBARA
IPC: C23C16/44 , C23C16/455 , H01J37/32
CPC classification number: C23C16/4412 , C23C16/45591 , H01J37/32623 , H01J2237/022 , H01J2237/3321
Abstract: A piping includes a first pipe part having a first end connected to a processing chamber and a second end connected to another piping; a second pipe part connected to the first pipe between the first end and the second end, and configured to supply hydrogen gas or hydrogen radicals into the first pipe part; a valve provided between the second pipe part and the second end, and configured to open and close the first pipe part; and a metal film coated on an inner wall of the first pipe part.
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公开(公告)号：US20210335610A1
公开(公告)日：2021-10-28
申请号：US17184828
申请日：2021-02-25
Applicant: Kioxia Corporation
Inventor： Kei WATANABE , Toshiyuki SASAKI , Soichi YAMAZAKI , Shunsuke OCHIAI , Yuya MATSUBARA
IPC: H01L21/033
Abstract: A method for producing a semiconductor device includes forming, on a substrate, a film to be processed. The method further includes forming, on the film to be processed, a first film containing a metallic element and a second film containing at least one of carbon or boron. The method further includes forming an insulating film on the first and second films. The method further includes processing the film to be processed using the first film, the second film, and the insulating film, as a mask.
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Patent Agency Ranking
公开(公告)号：US20220108877A1
公开(公告)日：2022-04-07
申请号：US17463834
申请日：2021-09-01
Applicant: Kioxia Corporation
Inventor： Yuya MATSUBARA
IPC: H01J37/32 , H01L21/683 , C23C16/458
Abstract: According to one embodiment, an electrostatic chuck apparatus includes a substrate support plate formed of a dielectric material. The substrate support plate includes: a plurality of support bases protruding from an upper surface of the substrate support plate, a plurality of ground electrodes formed inside the substrate support plate, each of the ground electrodes at a corresponding position to a respective one the support bases, and an electrostatic chuck electrode provided below the ground electrodes.
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公开(公告)号：US20210287903A1
公开(公告)日：2021-09-16
申请号：US17004216
申请日：2020-08-27
Applicant: Kioxia Corporation
Inventor： Takehiro KONDOH , Junichi HASHIMOTO , Soichi YAMAZAKI , Yuya MATSUBARA
IPC: H01L21/033 , H01L21/02 , H01L21/308
Abstract: A method for manufacturing a semiconductor device includes: forming a first film on a substrate; forming a second film containing at least carbon on the first film; forming a hole in the second film; and forming a recess, which communicates with the hole, in the first film by etching using the second film as a mask. In this method, the second film includes a first layer formed on the first film, and a second layer formed on the first layer. The first layer having a higher oxygen concentration than the second layer.
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公开(公告)号：US20220319842A1
公开(公告)日：2022-10-06
申请号：US17844333
申请日：2022-06-20
Applicant: KIOXIA CORPORATION
Inventor： Yuya MATSUBARA , Masayuki KITAMURA , Atsuko SAKATA
Abstract: A substrate processing apparatus includes a chamber to accommodate a substrate. The apparatus includes a stage to support the substrate in the chamber. The apparatus includes an electrode disposed above the stage and containing aluminum. The electrode generates plasma from gas supplied into the chamber to form a first film on the substrate by the plasma. The apparatus further includes a second film formed on a surface of the electrode and containing aluminum and fluorine or containing aluminum and oxygen.
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公开(公告)号：US20210277520A1
公开(公告)日：2021-09-09
申请号：US17014200
申请日：2020-09-08
Applicant: Kioxia Corporation
Inventor： Yuya MATSUBARA , Hiroshi KUBOTA
Abstract: A semiconductor manufacturing apparatus according to the present embodiment includes a first gas feeder, a first gas processor and a second gas feeder. The first gas feeder is provided above a stage on which a substrate is to be placed and feeds a first gas to the substrate. The first gas processor supplies high frequency power to the stage and renders the first gas fed from the first gas feeder into plasma. The second gas feeder is provided above the stage and feeds a second gas more difficult to render into plasma than the first gas to an outer periphery of the first gas having been rendered into plasma.
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公开(公告)号：US20210066090A1
公开(公告)日：2021-03-04
申请号：US16806622
申请日：2020-03-02
Applicant: KIOXIA CORPORATION
Inventor： Junichi HASHIMOTO , Kaori NARUMIYA , Kosuke HORIBE , Soichi YAMAZAKI , Kei WATANABE , Yusuke KONDO , Mitsuhiro OMURA , Takehiro KONDOH , Yuya MATSUBARA , Junya FUJITA , Toshiyuki SASAKI
IPC: H01L21/311 , H01L21/033 , H01L27/11556 , H01L27/11582
Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.
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