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    METHODS AND APPARATUS FOR MEASURING HEIGHT ON A SEMICONDUCTOR WAFER
    11.
    发明申请
    METHODS AND APPARATUS FOR MEASURING HEIGHT ON A SEMICONDUCTOR WAFER 审中-公开
    用于测量半导体波长的方法和装置

    公开(公告)号：US20160377412A1

    公开(公告)日：2016-12-29

    申请号：US15192962

    申请日：2016-06-24

    Applicant: KLA-Tencor Corporation

    Inventor： Shifang Li ,  Guoheng Zhao

    IPC: G01B11/06

    CPC classification number: G01B11/0608 ,  G01B11/0641 ,  G01B2210/56 ,  G01N21/9501 ,  G01N21/956 ,  H01L22/12

    Abstract: Disclosed are apparatus and methods for determining height of a semiconductor structure. The system includes an illumination module for directing one or more source lines or points towards a specimen having multiple surfaces at different relative heights and a collection module for detecting light reflected from the surfaces. The collection module contains at least two detectors with one slit or pinhole in front of each detector that that are positioned to receive light reflected from one of the surfaces. A first detector receives reflected light from a slit or pinhole that is positioned before a focal point, and a second detector receive reflected light from a slit or pinhole that is positioned after the focal point so that the first and second detector receive light having different intensity values unless the surface is at an optimum focus. The system includes a processor system for determining a height based on the detected light received by the detectors from two of the surfaces.

    Abstract translation: 公开了用于确定半导体结构的高度的装置和方法。 该系统包括用于将一个或多个源极线或点指向具有不同相对高度的多个表面的样​​本的照明模块和用于检测从表面反射的光的收集模块。 收集模块包含至少两个检测器，每个检测器前面具有一个狭缝或针孔，其被定位成接收从一个表面反射的光。 第一检测器接收来自位于焦点之前的狭缝或针孔的反射光，并且第二检测器接收来自位于焦点之后的狭缝或针孔的反射光，使得第一和第二检测器接收具有不同强度的光 值，除非表面处于最佳焦点。 该系统包括处理器系统，用于基于来自两个表面的检测器接收到的检测光来确定高度。

    Method for defocus detection
    14.
    发明授权
    Method for defocus detection 有权

    公开(公告)号：US10372113B2

    公开(公告)日：2019-08-06

    申请号：US15669030

    申请日：2017-08-04

    Applicant: KLA-Tencor Corporation

    Inventor： Xuguang Jiang ,  Shifang Li ,  Yong Zhang

    IPC: G06F17/50 ,  G05B19/418 ,  G06T7/00 ,  G06T7/11 ,  G06T7/174

    Abstract: Two or more color data can be combined to form a new data source to enhance sensitivity to defocus signal. Defocus detection can be performed on the newly formed data source. In a setup step, a training wafer can be used to select the best color combination, and obtain defocus detection threshold. This can include applying a segment mask, calculating mean intensities of the segment, determining a color combination that optimizes defocus sensitivity, and generating a second segment mask based on pixels that are above a threshold to sensitivity. In a detection step, the selected color combination is calculated, and the threshold is applied to obtain defocus detection result.

    Line scan spectroscopic white light interferometry for semiconductor inspection and metrology
    18.
    发明授权
    Line scan spectroscopic white light interferometry for semiconductor inspection and metrology 有权

    公开(公告)号：US09863756B1

    公开(公告)日：2018-01-09

    申请号：US14877882

    申请日：2015-10-07

    Applicant: KLA-TENCOR CORPORATION

    Inventor： Shifang Li

    IPC: G01B11/02 ,  G01B11/06 ,  G01J3/45 ,  G01J3/02 ,  G01J3/18

    CPC classification number: G01B11/0608 ,  G01J3/0208 ,  G01J3/1838 ,  G01J3/4531 ,  G01J2003/451

    Abstract: A device and method for surface height profiling are presented. The device has a source with a source slit through which light is provided. The device includes an objective lens having a reference surface. The objective lens is configured to illuminate a sample with test light from the source and to combine test light reflected from the sample with reference light reflected from the reference surface to form combined light. A spectrometer is positioned to receive the combined light at an entrance slit. The spectrometer is configured to image the combined light as a 2D image with a wavelength dimension and a spatial position dimension. A processor in electrical communication with the spectrometer is programmed to receive a signal representing the 2D image and to determine a surface height profile of the sample based on the signal.

    Apparatus and methods for measuring properties in a TSV structure using beam profile reflectometry
    19.
    发明授权
    Apparatus and methods for measuring properties in a TSV structure using beam profile reflectometry 有权

    公开(公告)号：US09709386B1

    公开(公告)日：2017-07-18

    申请号：US15091522

    申请日：2016-04-05

    Applicant: KLA-Tencor Corporation

    Inventor： Lena Nicolaides ,  Timothy Goodwin ,  Raul V. Tan ,  Shifang Li

    IPC: G01B11/28 ,  G01B11/06

    CPC classification number: G01B11/0641 ,  G01B2210/56 ,  H01L22/12

    Abstract: Disclosed are methods and apparatus for measuring a characteristics of a through-silicon via (TSV) structure. A beam profile reflectivity (BPR) tool is used to move to a first xy position having a TSV structure. The BPR tool is then used to obtain an optimum focus of at the first xy position by adjusting the z position to a first optimum z position for obtaining measurements at the first xy position. Via the BPR tool, reflectivity measurements for a plurality of angles of incidence are obtained at the first xy position. One or more film thicknesses for the TSV structure are determined based on the reflectivity measurements. A z position can also be recorded and used to determine a height of such TSV structure, as well as one or more adjacent xy positions.

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