公开(公告)号：US20170084765A1

公开(公告)日：2017-03-23

申请号：US15368024

申请日：2016-12-02

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Chae Hwan Jeong ,  Jong Hwan Lee ,  Chang Heon Kim ,  Ho Sung Kim

IPC: H01L31/0352 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/035227 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

Abstract: One embodiment of the present invention relates to a method for manufacturing solar cells having a nano-micro composite structure on a silicon substrate and solar cells manufactured thereby. The technical problem to be solved is to provide a method for manufacturing solar cells and solar cells manufactured thereby, the method being capable of forming micro wires in various sizes according to the lithographic design of a photoresist and forming nano wires, which have various sizes and aspect ratios, by adjusting the concentration of a wet etching solution and immersion time. To this end, the present invention provides a method for manufacturing solar cells and solar cells manufactured thereby, the method comprising the steps of: preparing a first conductive semiconductor substrate having a first surface and a second surface; patterning a photoresist on the second surface of the first conductive semiconductor substrate such that the plane form of the photoresist becomes a form in which multiple horizontal lines and multiple vertical lines intersect each other; electrolessly etching the semiconductor substrate so as to form a micro wire having a width of 1-3 μm and a height of 3-5 μm in a region corresponding to the photoresist and to form multiple nano wires having a width of 1-100 nm and a height of 1-3 μm in a region not corresponding to the photoresist; doping the micro wire and nano wires with a second conductive impurity by using POCl3; forming a first electrode on the first surface of the semiconductor substrate; and forming a second electrode on the micro wire, wherein the efficiency of the solar cells is 10-13%, the efficiency being the ratio of output to incident light energy per unit area.

公开(公告)号：US20150380720A1

公开(公告)日：2015-12-31

申请号：US14766874

申请日：2013-08-20

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Ho Sung Kim ,  Sun Woo Yang ,  Kyeong Wan Kim ,  Chae Hwan Jeong ,  Tae Won Kim ,  Duck Rye Chang ,  Min Young Kim

IPC: H01M4/04 ,  H01M4/505 ,  H01M10/44 ,  H01M4/485 ,  C01G53/00 ,  H01M4/1391 ,  H01M4/131 ,  H01M4/525

CPC classification number: H01M4/0471 ,  C01G53/50 ,  C01P2002/72 ,  C01P2006/40 ,  H01M2/1653 ,  H01M4/0404 ,  H01M4/0435 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/382 ,  H01M4/485 ,  H01M4/505 ,  H01M4/525 ,  H01M10/0427 ,  H01M10/052 ,  H01M10/44 ,  H01M2004/027 ,  Y02T10/7011

Abstract: This disclosure synthesizes an anodic composite material Li(LixNiyCozMnwO2+α) of Li2MnO3 series whose theoretical capacity is a level of about 460 mAh/g, and to produce an electrode of a high capacity using the synthesized anodic composite material. Also provided is a method for charging and discharging the electrode. Here, the method for producing an anodic composite material for a lithium secondary battery includes the steps of: mixing a nickel nitrate solution, a manganese nitrate solution, and a cobalt nitrate solution to produce a starting material solution; and mixing the starting material solution with a complexing agent so as to produce an anodic composite material Li(LixNiyCozMnwO2+α) of Li2MnO3 series by means of coprecipitation.

Abstract translation: 本公开内容合成了理论容量为约460mAh / g的Li2MnO3系列的阳极复合材料Li（LixNiyCozMnwO2 +α），并使用合成的阳极复合材料制造高容量的电极。 还提供了一种用于充电和放电电极的方法。 这里，用于制造锂二次电池用阳极复合材料的方法包括以下步骤：将硝酸镍溶液，硝酸锰溶液和硝酸钴溶液混合以制备原料溶液; 并将原料溶液与络合剂混合，通过共沉淀法制备Li2MnO3系列的阳极复合材料Li（Li x Ni y Co z Mn O 2 +α）。

公开(公告)号：US20150280048A1

公开(公告)日：2015-10-01

申请号：US14437087

申请日：2012-12-18

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Chae Hwan Jeong ,  Sun Hwa Lee ,  Sang Ryu ,  Ho Sung Kim ,  Seong Jae Boo

IPC: H01L31/18

CPC classification number: H01L31/182 ,  C23C14/5806 ,  H01L31/028 ,  H01L31/068 ,  H01L31/1872 ,  H05K999/99 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon thin film, which is formed on a low-priced substrate, by means of an electron beam so as for same to easily be of high quality by having high crystallization yield and to be processed at a low temperature. To this end, one embodiment of the present invention provides a method of manufacturing polycrystalline silicon thin-film solar cell by means of a method for crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method comprising: a substrate preparation step for preparing a substrate; a type 1+ amorphous silicon layer deposition step for forming a type 1+ amorphous silicon layer on the substrate; a type 1 amorphous silicon layer deposition step for forming a type 1 amorphous silicon layer on the type 1+ amorphous silicon layer; an absorption layer formation step for forming an absorption layer by radiating a linear electron beam to the type 1 amorphous silicon layer and thus crystallizing the type 1 amorphous layer and the type 1+ amorphous silicon layer; a type 2 amorphous silicon layer deposition step for forming a type 2 amorphous silicon layer on the absorption layer; and an emitter layer formation step for forming an emitter layer by radiating a linear electron beam to the type 2 amorphous silicon layer and thus crystallizing the type 2 amorphous silicon layer, wherein the linear electron beam is radiated from above type 1 and type 2 amorphous silicon layers in a linear scanning manner in which to reciprocate in a predetermined area.

Abstract translation: 本发明的一个实施方案涉及通过使用线性电子束使大面积非晶硅薄膜结晶的方法制造多晶硅薄膜太阳能电池的方法，并且要解决的技术问题是使无定形 硅薄膜，其通过电子束形成在低价基板上，以便通过具有高结晶产率容易地获得高质量并在低温下进行处理。 为此，本发明的一个实施例提供一种利用线性电子束使大面积非晶硅薄膜结晶的方法制造多晶硅薄膜太阳能电池的方法，该方法包括： 制备底物的步骤; 1类非晶硅层沉积步骤，用于在衬底上形成1型非晶硅层; 1型非晶硅层沉积步骤，用于在1 +非晶硅层上形成1型非晶硅层; 吸收层形成步骤，用于通过将线性电子束照射到1型非晶硅层并因此使1型非晶层和1型非晶硅层结晶而形成吸收层; 用于在吸收层上形成2型非晶硅层的2型非晶硅层沉积步骤; 以及发射极层形成步骤，用于通过将线性电子束照射到2型非晶硅层并因此使2型非晶硅层结晶而形成发射极层，其中线性电子束从上述类型1和2型非晶硅 层，其以预定区域往复运动的线性扫描方式。