公开(公告)号：US07306978B2

公开(公告)日：2007-12-11

申请号：US10941837

申请日：2004-09-16

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Masaharu Nagai ,  Yutaka Matsuda ,  Keiko Saito ,  Hisao Ikeda

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Masaharu Nagai ,  Yutaka Matsuda ,  Keiko Saito ,  Hisao Ikeda

IPC分类号： H01L21/00

CPC分类号： H01L51/56 ,  H01L27/3244 ,  H01L27/3246 ,  H01L51/5203 ,  H01L51/5262 ,  H01L2251/5315 ,  H01L2251/5323

摘要： The present invention provides a highly stable light emitting device having high light-emitting efficiency (light-extraction efficiency) with high luminance and low power consumption, and a method of manufacturing thereof. A partition wall and a heat-resistant planarizing film are formed of a same material so as to be well-adhered to each other, thereby reducing material costs. Either an anode or a cathode is formed on the heat-resistant planarizing film. The partition wall and the heat-resistant planarizing film is adhered to each other without inserting a film having different refractive index therebetween, and therefore reflection of light is not caused in an interface.

摘要翻译： 本发明提供了具有高亮度和低功耗的高发光效率（光提取效率）的高度稳定的发光器件及其制造方法。 分隔壁和耐热平面化膜由相同的材料形成以便彼此良好地粘附，从而降低材料成本。 在耐热平面化膜上形成阳极或阴极。 分隔壁和耐热平面化膜彼此粘合而不插入其间具有不同折射率的膜，因此在界面上不会引起光的反射。

公开(公告)号：US20080088245A1

公开(公告)日：2008-04-17

申请号：US11984552

申请日：2007-11-19

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Masaharu Nagai ,  Yutaka Matsuda ,  Keiko Saito ,  Hisao Ikeda

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Masaharu Nagai ,  Yutaka Matsuda ,  Keiko Saito ,  Hisao Ikeda

IPC分类号： G09G3/10

CPC分类号： H01L51/56 ,  H01L27/3244 ,  H01L27/3246 ,  H01L51/5203 ,  H01L51/5262 ,  H01L2251/5315 ,  H01L2251/5323

摘要： The present invention provides a highly stable light emitting device having high light-emitting efficiency (light-extraction efficiency) with high luminance and low power consumption, and a method of manufacturing thereof. A partition wall and a heat-resistant planarizing film are formed of a same material so as to be well-adhered to each other, thereby reducing material costs. Either an anode or a cathode is formed on the heat-resistant planarizing film. The partition wall and the heat-resistant planarizing film is adhered to each other without inserting a film having different refractive index therebetween, and therefore reflection of light is not caused in an interface.

摘要翻译： 本发明提供了具有高亮度和低功耗的高发光效率（光提取效率）的高度稳定的发光器件及其制造方法。 分隔壁和耐热平面化膜由相同的材料形成以便彼此良好地粘附，从而降低材料成本。 在耐热平面化膜上形成阳极或阴极。 分隔壁和耐热平面化膜彼此粘合而不插入其间具有不同折射率的膜，因此在界面上不会引起光的反射。

公开(公告)号：US07947538B2

公开(公告)日：2011-05-24

申请号：US12534176

申请日：2009-08-03

申请人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

发明人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/1288 ,  H01L27/14623 ,  H01L27/3244 ,  H01L29/78645

摘要： It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes.

摘要翻译： 本发明的目的是在有限的区域中形成多个元件，以减少用于积分的元件所占据的面积，从而进一步提高分辨率（增加像素数），减小每个显示像素间距，同时小型化， 并且驱动像素部分的驱动电路的集成可以在具有EL元件的液晶显示装置和发光装置等半导体装置中进行。 将具有由衍射光栅图案或半透明膜构成的辅助图案的光掩模或掩模版施加到用于形成栅电极的光刻工艺以形成复杂的栅电极 。 此外，只要通过改变掩模而不增加处理次数，就可以在同一基板上形成具有上述多栅结构的顶栅TFT和具有单栅结构的顶栅TFT。

公开(公告)号：US20090291536A1

公开(公告)日：2009-11-26

申请号：US12534176

申请日：2009-08-03

申请人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

发明人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

IPC分类号： H01L21/336

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/1288 ,  H01L27/14623 ,  H01L27/3244 ,  H01L29/78645

摘要： It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes.

摘要翻译： 本发明的目的是在有限的区域中形成多个元件，以减少用于积分的元件所占据的面积，从而进一步提高分辨率（增加像素数），减小每个显示像素间距，同时小型化， 并且驱动像素部分的驱动电路的集成可以在具有EL元件的液晶显示装置和发光装置等半导体装置中进行。 将具有由衍射光栅图案或半透明膜构成的辅助图案的光掩模或掩模版施加到用于形成栅电极的光刻工艺以形成复杂的栅电极 。 此外，只要通过改变掩模而不增加处理次数，就可以在同一基板上形成具有上述多栅结构的顶栅TFT和具有单栅结构的顶栅TFT。

公开(公告)号：US07608490B2

公开(公告)日：2009-10-27

申请号：US11440175

申请日：2006-05-25

申请人： Shunpei Yamazaki ,  Tetsuya Kakehata ,  Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori

发明人： Shunpei Yamazaki ,  Tetsuya Kakehata ,  Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori

IPC分类号： H01L21/00

CPC分类号： H01L21/02683 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1285 ,  H01L27/1288

摘要： To provide a semiconductor device having a circuit with high operating performance and high reliability, and improve the reliability of the semiconductor device, thereby improving the reliability of an electronic device having the same. The aforementioned object is achieved by combining a step of crystallizing a semiconductor layer by irradiation with continuous wave laser beams or pulsed laser beams with a repetition rate of 10 MHz or more, while scanning in one direction; a step of photolithography with the use of a photomask or a leticle including an auxiliary pattern which is formed of a diffraction grating pattern or a semi-transmissive film having a function of reducing the light intensity; and a step of performing oxidation, nitridation, or surface-modification to the surface of the semiconductor film, an insulating film, or a conductive film, with high-density plasma with a low electron temperature.

摘要翻译： 为了提供具有高操作性能和高可靠性的电路的半导体器件，并且提高了半导体器件的可靠性，从而提高了具有该半导体器件的电子器件的可靠性。 上述目的是通过在沿一个方向扫描的同时，通过照射连续波激光束或重复频率为10MHz或更高的脉冲激光束来结合半导体层结晶步骤来实现的; 使用光掩模或包含由衍射光栅图案形成的辅助图案或具有降低光强度功能的半透射膜的吸收体的光刻步骤; 以及对具有低电子温度的高密度等离子体对半导体膜，绝缘膜或导电膜的表面进行氧化，氮化或表面改性的步骤。

公开(公告)号：US07579220B2

公开(公告)日：2009-08-25

申请号：US11383694

申请日：2006-05-16

申请人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

发明人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/1288 ,  H01L27/14623 ,  H01L27/3244 ,  H01L29/78645

摘要： It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes.

摘要翻译： 本发明的目的是在有限的区域中形成多个元件，以减少用于积分的元件所占据的面积，从而进一步提高分辨率（增加像素数），减小每个显示像素间距，同时小型化， 并且驱动像素部分的驱动电路的集成可以在具有EL元件的液晶显示装置和发光装置等半导体装置中进行。 将具有由衍射光栅图案或半透明膜构成的辅助图案的光掩模或掩模版施加到用于形成栅电极的光刻工艺以形成复杂的栅电极 。 此外，只要通过改变掩模而不增加处理次数，就可以在同一基板上形成具有上述多栅结构的顶栅TFT和具有单栅结构的顶栅TFT。

公开(公告)号：US20060275710A1

公开(公告)日：2006-12-07

申请号：US11440175

申请日：2006-05-25

申请人： Shunpei Yamazaki ,  Tetsuya Kakehata ,  Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori

发明人： Shunpei Yamazaki ,  Tetsuya Kakehata ,  Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori

IPC分类号： G03F7/26

CPC分类号： H01L21/02683 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1285 ,  H01L27/1288

摘要： To provide a semiconductor device having a circuit with high operating performance and high reliability, and improve the reliability of the semiconductor device, thereby improving the reliability of an electronic device having the same. The aforementioned object is achieved by combining a step of crystallizing a semiconductor layer by irradiation with continuous wave laser beams or pulsed laser beams with a repetition rate of 10 MHz or more, while scanning in one direction; a step of photolithography with the use of a photomask or a leticle including an auxiliary pattern which is formed of a diffraction grating pattern or a semi-transmissive film having a function of reducing the light intensity; and a step of performing oxidation, nitridation, or surface-modification to the surface of the semiconductor film, an insulating film, or a conductive film, with high-density plasma with a low electron temperature.

公开(公告)号：US20060261336A1

公开(公告)日：2006-11-23

申请号：US11383694

申请日：2006-05-16

申请人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

发明人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

IPC分类号： H01L29/04

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/1288 ,  H01L27/14623 ,  H01L27/3244 ,  H01L29/78645

摘要： It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes.

公开(公告)号：US07816863B2

公开(公告)日：2010-10-19

申请号：US10933507

申请日：2004-09-03

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takashi Hamada ,  Masaharu Nagai ,  Yutaka Matsuda

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takashi Hamada ,  Masaharu Nagai ,  Yutaka Matsuda

IPC分类号： H05B33/22

CPC分类号： H01L27/3258 ,  H01L21/31608 ,  H01L27/3246 ,  H01L27/3276 ,  H01L51/5206 ,  H01L51/5218 ,  H01L51/5246 ,  H01L51/5281 ,  H01L51/529 ,  H01L2251/5315 ,  H01L2251/5323

摘要： An object of the present invention is to realize a light emitting device having low power consumption and high stability, in addition to improve extraction efficiency of light generated in a light emitting element. At least an interlayer insulating film (including a planarizing film), an anode, and a bank covering an edge portion of the anode contain-chemically and physically stable silicon oxide, or are made of a material containing silicon oxide as its main component in order to accomplish a light emitting device having high stability. Generation of heat in a light emitting panel can be suppressed in addition to increase in efficiency (luminance/current) of a light emitting panel according to the structure of the present invention. Consequently, synergistic effect on reliability of a light emitting device is obtained.

摘要翻译： 本发明的目的是提供一种具有低功耗和高稳定性的发光器件，同时提高了在发光元件中产生的光的提取效率。 至少层间绝缘膜（包括平坦化膜），阳极和覆盖阳极的边缘部分的堤包含化学和物理稳定的氧化硅，或者由以氧化硅为主要成分的材料按顺序制成 以实现具有高稳定性的发光器件。 除了根据本发明的结构提高发光面板的效率（亮度/电流）之外，还可以抑制发光面板中的发热。 因此，获得了对发光器件的可靠性的协同效应。

公开(公告)号：US20050067953A1

公开(公告)日：2005-03-31

申请号：US10933507

申请日：2004-09-03

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takashi Hamada ,  Masaharu Nagai ,  Yutaka Matsuda

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takashi Hamada ,  Masaharu Nagai ,  Yutaka Matsuda

IPC分类号： H01L21/316 ,  H01L27/32 ,  H01L51/52 ,  H05B33/00 ,  H05B33/10 ,  H05B33/12 ,  H05B33/20 ,  H05B33/22

CPC分类号： H01L27/3258 ,  H01L21/31608 ,  H01L27/3246 ,  H01L27/3276 ,  H01L51/5206 ,  H01L51/5218 ,  H01L51/5246 ,  H01L51/5281 ,  H01L51/529 ,  H01L2251/5315 ,  H01L2251/5323

摘要： An object of the present invention is to realize a light emitting device having low power consumption and high stability, in addition to improve extraction efficiency of light generated in a light emitting element. At least an interlayer insulating film (including a planarizing film), an anode, and a bank covering an edge portion of the anode contain-chemically and physically stable silicon oxide, or are made of a material containing silicon oxide as its main component in order to accomplish a light emitting device having high stability. Generation of heat in a light emitting panel can be suppressed in addition to increase in efficiency (luminance/current) of a light emitting panel according to the structure of the present invention. Consequently, synergistic effect on reliability of a light emitting device is obtained.

摘要翻译： 本发明的目的是提供一种具有低功耗和高稳定性的发光器件，同时提高了在发光元件中产生的光的提取效率。 至少层间绝缘膜（包括平坦化膜），阳极和覆盖阳极的边缘部分的堤包含化学和物理稳定的氧化硅，或者由以氧化硅为主要成分的材料按顺序制成 以实现具有高稳定性的发光器件。 除了根据本发明的结构提高发光面板的效率（亮度/电流）之外，还可以抑制发光面板中的发热。 因此，获得了对发光器件的可靠性的协同效应。