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34 条记录 (耗时 0.022 秒)

    GATE DRIVER CIRCUIT FOR SWITCHING DEVICE
    11.
    发明申请
    GATE DRIVER CIRCUIT FOR SWITCHING DEVICE 有权
    用于切换设备的门控驱动电路

    公开(公告)号：US20070200613A1

    公开(公告)日：2007-08-30

    申请号：US11624717

    申请日：2007-01-19

    申请人： Katsumi Ishikawa ,  Yutaka Sato ,  Masahiro Nagasu ,  Seiji Ishida

    发明人： Katsumi Ishikawa ,  Yutaka Sato ,  Masahiro Nagasu ,  Seiji Ishida

    IPC分类号： H03K17/687

    CPC分类号： H03K17/0406 ,  H03K17/168

    摘要： A gate driver circuit of a voltage drive type power semiconductor switching device capable of speeding up di/dt and dv/dt even during large-current driving to thereby reduce the switching loss is disclosed. This power semiconductor switching device gate driving circuit includes a drive circuit which applies a drive signal to the gate electrode of the power semiconductor switching device and a measurement unit for measuring a flow current of the power semiconductor switching device. Based on a detected value of the flow current of the power semiconductor switching device, the gate is made variable in mirror voltage thereof.

    摘要翻译： 公开了即使在大电流驱动期间能够加快di / dt和dv / dt的电压驱动型功率半导体开关器件的栅极驱动器电路，从而降低开关损耗。 该功率半导体开关元件栅极驱动电路具有向功率半导体开关元件的栅电极施加驱动信号的驱动电路和用于测量功率半导体开关元件的流量的测量单元。 基于功率半导体开关器件的流量电流的检测值，栅极的镜电压可变。

    Semiconductor circuit preventing electromagnetic noise
    12.
    发明授权
    Semiconductor circuit preventing electromagnetic noise 失效
    半导体电路防止电磁噪声

    公开(公告)号：US06414370B1

    公开(公告)日：2002-07-02

    申请号：US09639801

    申请日：2000-08-17

    申请人： Masahiro Nagasu ,  Hideo Kobayashi ,  Hideki Miyazaki ,  Shin Kimura ,  Junichi Sakano ,  Mutsuhiro Mori

    发明人： Masahiro Nagasu ,  Hideo Kobayashi ,  Hideki Miyazaki ,  Shin Kimura ,  Junichi Sakano ,  Mutsuhiro Mori

    IPC分类号： H01L27082

    CPC分类号： H01L29/866 ,  H01L29/0692 ,  H01L29/0834 ,  H01L29/7393 ,  H01L29/7395 ,  H03K17/08148 ,  H03K17/0828

    摘要： A semiconductor circuit or a semiconductor device has the current-voltage characteristic that, in a blocking-state of the semiconductor circuit or the semiconductor device, a current gently flows for values of a voltage equal to or greater than a first voltage value but equal to or smaller than a second voltage value, whereas a current abruptly flows for values of a voltage greater than the second voltage value. Due to the current-voltage characteristic, energy accumulated in an inductance provided within the circuit is consumed by a differential resistance of the semiconductor circuit or a semiconductor, thereby preventing the occurrence of the electromagnetic noise and an excessively large voltage.

    摘要翻译： 半导体电路或半导体器件具有电流 - 电压特性，在半导体电路或半导体器件的阻挡状态下，电流缓慢地流过等于或大于第一电压值但等于或等于 或小于第二电压值，而电流突然流过大于第二电压值的电压值。 由于电流 - 电压特性，在电路内提供的电感中积累的能量被半导体电路或半导体的差分电阻消耗，从而防止电磁噪声的发生和过大的电压。

    Drive circuit of semiconductor device
    13.
    发明授权
    Drive circuit of semiconductor device 失效
    半导体器件的驱动电路

    公开(公告)号：US08471622B2

    公开(公告)日：2013-06-25

    申请号：US12760742

    申请日：2010-04-15

    申请人： Katsumi Ishikawa ,  Kazutoshi Ogawa ,  Masahiro Nagasu

    发明人： Katsumi Ishikawa ,  Kazutoshi Ogawa ,  Masahiro Nagasu

    IPC分类号： H03K17/60

    CPC分类号： H03K17/08128 ,  H03K17/127 ,  H03K17/6877

    摘要： The invention provides a switching circuit of a power semiconductor device having connected in parallel SiC diodes with a small recovery current, capable of significantly reducing turn-on loss and recovery loss without increasing the noise in the MHz band, and contributing to reducing the loss and noise of inverters. The present invention provides a switching circuit and an inverter circuit of a power semiconductor device comprising a module combining Si-IGBT and SiC diodes, wherein an on-gate resistance is set smaller than an off-gate resistance.

    摘要翻译： 本发明提供了一种功率半导体器件的开关电路，其具有并联的SiC二极管，具有小的恢复电流，能够显着降低导通损耗和恢复损耗，而不增加MHz带内的噪声，并有助于减少损耗， 逆变器噪声。 本发明提供一种功率半导体器件的开关电路和逆变器电路，该功率半导体器件包括组合Si-IGBT和SiC二极管的模块，其中栅极电阻被设定为小于截止栅极电阻。

    Gate Drive Circuit
    14.
    发明申请
    Gate Drive Circuit 失效
    栅极驱动电路

    公开(公告)号：US20080122497A1

    公开(公告)日：2008-05-29

    申请号：US12019032

    申请日：2008-01-24

    申请人： Katsumi ISHIKAWA ,  Masahiro Nagasu ,  Dai Tsugawa

    发明人： Katsumi ISHIKAWA ,  Masahiro Nagasu ,  Dai Tsugawa

    IPC分类号： H03B1/00

    CPC分类号： H03K17/567 ,  H03K17/163 ,  H03K17/168 ,  H03K2217/0036

    摘要： A subject of the present invention is to reduce noise caused by ringing or the like while reducing turn-on power loss of the element and reverse recovery loss of the diode in a switching circuit of a power semiconductor element to which a SiC diode having small recovery current is connected in parallel.A means for solving the problem is to detect gate voltage and/or collector voltage of the power semiconductor switching element and change gate drive voltage in several stages based on the detected value.

    摘要翻译： 本发明的目的是减少振荡等引起的噪声，同时降低元件的导通功率损耗并且在具有小恢复的SiC二极管的功率半导体元件的开关电路中的二极管的反向恢复损耗 电流并联。 解决该问题的手段是基于检测值来检测功率半导体开关元件的栅极电压和/或集电极电压并且以几个阶段改变栅极驱动电压。

    Gate drive circuit of voltage drive switching element
    16.
    发明授权
    Gate drive circuit of voltage drive switching element 有权
    电压驱动开关元件的栅极驱动电路

    公开(公告)号：US06271709B1

    公开(公告)日：2001-08-07

    申请号：US09453204

    申请日：1999-12-03

    申请人： Shin Kimura ,  Masahiro Nagasu ,  Satoru Inarida ,  Hideki Miyazaki ,  Katsunori Suzuki

    发明人： Shin Kimura ,  Masahiro Nagasu ,  Satoru Inarida ,  Hideki Miyazaki ,  Katsunori Suzuki

    IPC分类号： H03K1716

    CPC分类号： H03K17/168 ,  H03K17/163

    摘要： A gate drive circuit of a voltage drive switching element, which is characterized by control of di/dt and dv/dt when an IGBT is switched by controlling increases in the switching time and loss of the IGBT, includes a drive means for amplifying a signal for controlling the switching operation of a voltage drive switching device including the IGBT, a means for detecting the gate voltage of the IGBT, a voltage decrease (increase) means for slowly decreasing (increasing) the output voltage when the drive means is turned on (off) in the course of time, and a voltage increase (decrease) means for slowly increasing (decreasing) the output voltage. By switching from the voltage decrease (increase) means to the voltage increase (decrease) means according to the detected value of the gate voltage of the IGBT, di/dt and dv/dt are controlled when the IGBT is turned on (off).

    摘要翻译： 电压驱动开关元件的栅极驱动电路，其特征在于，通过控制IGBT的切换时间和损耗的切换来切换IGBT时的di / dt和dv / dt的控制，包括用于放大信号的驱动装置 用于控制包括IGBT的电压驱动开关装置的切换操作，用于检测IGBT的栅极电压的装置，用于当驱动装置接通时缓慢降低（增加）输出电压的电压降低（增加）装置（ 关闭），并且电压增加（减小）意味着缓慢增加（降低）输出电压。 通过从IGBT的栅极电压的检测值切换到电压降低（增加）装置到电压增加（减小）的手段，当IGBT导通（关闭）时，di / dt和dv / dt被控制。

    Semiconductor thyristor switching device and power converter using same
    18.
    发明授权
    Semiconductor thyristor switching device and power converter using same 失效
    半导体晶闸管开关器件和功率转换器使用相同

    公开(公告)号：US5831293A

    公开(公告)日：1998-11-03

    申请号：US709451

    申请日：1996-09-06

    申请人： Tetsuo Mizoguchi ,  Masahiro Nagasu ,  Hideo Kobayashi ,  Tsutomu Yatsuo

    发明人： Tetsuo Mizoguchi ,  Masahiro Nagasu ,  Hideo Kobayashi ,  Tsutomu Yatsuo

    IPC分类号： H01L29/744 ,  H01L29/74 ,  H01L31/111

    CPC分类号： H01L29/744

    摘要： There is provided a semiconductor substrate which includes a pair of main surfaces, a first semiconductor layer of a first conductivity type adjacent to one of the main surface, a second semiconductor layer of a second conducting type of which impurity concentration is lower than that of the first semiconductor layer and which is adjacent to the first semiconductivity, a third semiconductor layer of the first conductivity type adjacent to the second semiconductor, and a fourth semiconductor of the second conductivity type of which impurity concentration is higher than that of the third semiconductor and which is adjacent to the other of the main surfaces and the third semiconductor. The device further includes one main electrode in ohmic-contact with the first semiconductor layer on one of the main surfaces of said semiconductor substrate, the other main electrode in ohmic-contact with the first semiconductor layer on the other of the main surfaces of said semiconductor substrate, and a control electrode connected electrically to the third semiconductor layer. The total amount of impurities of said third semiconductor layer is less than 10.sup.14 cm.sup.-2.

    摘要翻译： 提供了一种半导体衬底，其包括一对主表面，与主表面之一相邻的第一导电类型的第一半导体层，杂质浓度低于第二导电类型的第二导电类型的第二半导体层 第一半导体层，其与第一半导体层相邻，第一导电类型与第二半导体相邻的第三半导体层以及杂质浓度高于第三半导体的第二导电类型的第四半导体， 与另一个主表面和第三半导体相邻。 所述器件还包括与所述半导体衬底的一个主表面上的第一半导体层欧姆接触的一个主电极，与所述半导体衬底的另一主表面上的第一半导体层欧姆接触的另一个主电极 基板和与第三半导体层电连接的控制电极。 所述第三半导体层的杂质总量小于1014cm-2。

    Control apparatus of power conversion system
    19.
    发明授权
    Control apparatus of power conversion system 有权
    电力转换系统控制装置

    公开(公告)号：US07965056B2

    公开(公告)日：2011-06-21

    申请号：US12108573

    申请日：2008-04-24

    申请人： Mutsuhiro Terunuma ,  Eiichi Toyota ,  Motomi Shimada ,  Masahiro Nagasu

    发明人： Mutsuhiro Terunuma ,  Eiichi Toyota ,  Motomi Shimada ,  Masahiro Nagasu

    IPC分类号： H02P27/04

    CPC分类号： H02M3/156 ,  B60L7/16 ,  B60L9/18 ,  B60L15/2045 ,  B60L2200/26 ,  B60L2220/12 ,  H02M7/797 ,  H02M2001/0074 ,  Y02T10/644 ,  Y02T10/645 ,  Y02T10/7283

    摘要： The invention provides a control apparatus of a power conversion system for driving an induction motor via a VVVF inverter, wherein the AC voltage generated by the inverter is increased so as to expand the high-speed side property of the induction motor, to thereby improve the performance during power running and regenerative braking. In the present system, a DC power supply source having a power storage system with a capacity capable of processing the current flowing into or out of the inverter is inserted in series to the ground side of the input of the inverter, and the output voltage thereof is controlled from zero in a continuous manner to be added to the trolley voltage, which is then applied to the inverter.

    摘要翻译： 本发明提供了一种用于通过VVVF逆变器驱动感应电动机的电力转换系统的控制装置，其中增加了由逆变器产生的交流电压以扩大感应电动机的高速侧特性，从而改善了 电力运行和再生制动过程中的性能。 在本系统中，具有能够处理流入或流出逆变器的电流的能力的蓄电系统的直流电源源与逆变器的输入端的接地侧串联插入，其输出电压 以连续的方式从零被控制以加到台车电压上，然后施加到电抗器上。