公开(公告)号：US08642943B2

公开(公告)日：2014-02-04

申请号：US13640922

申请日：2010-12-03

申请人： Hiroki Mori ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Kouhei Miura ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

发明人： Hiroki Mori ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Kouhei Miura ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

IPC分类号： H01L31/101 ,  H01L31/18 ,  H01L33/06

CPC分类号： H01L31/03046 ,  B82Y20/00 ,  H01L27/1446 ,  H01L27/1467 ,  H01L31/035236 ,  Y02E10/544 ,  Y02P70/521

摘要： A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InxGa1-xAs (0.38≦x≦0.68) layer and a GaAs1-ySby (0.25≦y≦0.73) layer, and in the GaAs1-ySby layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.

摘要翻译： 光接收元件包括InP衬底1，具有MQW且位于InP衬底1上的光接收层3，位于光接收层3上的接触层5，从 接触层5的表面与光接收层和与p型区域形成欧姆接触的p侧电极11。 光接收元件的特征在于MQW具有包括In x Ga 1-x As（0.38 @ x @ 0.68）层和GaAs 1-ySby（0.25 @ y @ 0.73）层的对的层叠结构，并且在GaAs1-ySby InP衬底侧的部分中的Sb含量y大于相对侧的部分中的Sb含量y。

公开(公告)号：US08461570B2

公开(公告)日：2013-06-11

申请号：US13127005

申请日：2010-07-07

申请人： Kei Fujii ,  Takashi Ishizuka ,  Katsushi Akita ,  Youichi Nagai ,  Tatsuya Tanabe

发明人： Kei Fujii ,  Takashi Ishizuka ,  Katsushi Akita ,  Youichi Nagai ,  Tatsuya Tanabe

IPC分类号： H01L31/0352 ,  H01L31/0256 ,  G02F1/017

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L31/1035 ,  H01L31/109 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A method for manufacturing a semiconductor device, by which a multiple quantum well structure having a large number of pairs can be efficiently grown while maintaining good crystalline quality, and the semiconductor device, are provided. The semiconductor device manufacturing method of the present invention includes a step of forming a multiple quantum well structure 3 having 50 or more pairs of group III-V compound semiconductor quantum wells. In the step of forming the multiple quantum well structure 3, the multiple quantum well structure is formed by metal-organic vapor phase epitaxy using only metal-organic sources (all metal-organic source MOVPE).

摘要翻译： 提供一种制造半导体器件的方法，通过该方法可以有效地生长具有大量对的多量子阱结构，同时保持良好的晶体质量，并提供半导体器件。 本发明的半导体器件制造方法包括形成具有50对以上的III-V族化合物半导体量子阱的多量子阱结构3的工序。 在形成多量子阱结构3的步骤中，通过仅使用金属 - 有机源（全部金属 - 有机源MOVPE）的金属 - 有机气相外延形成多量子阱结构。

公开(公告)号：US20110210313A1

公开(公告)日：2011-09-01

申请号：US13127005

申请日：2010-07-07

申请人： Kei Fujii ,  Takashi Ishizuka ,  Katsushi Akita ,  Youichi Nagai ,  Tatsuya Tanabe

发明人： Kei Fujii ,  Takashi Ishizuka ,  Katsushi Akita ,  Youichi Nagai ,  Tatsuya Tanabe

IPC分类号： H01L31/0352 ,  H01L31/18 ,  B82Y99/00

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L31/1035 ,  H01L31/109 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A method for manufacturing a semiconductor device, by which a multiple quantum well structure having a large number of pairs can be efficiently grown while maintaining good crystalline quality, and the semiconductor device, are provided. The semiconductor device manufacturing method of the present invention includes a step of forming a multiple quantum well structure 3 having 50 or more pairs of group III-V compound semiconductor quantum wells. In the step of forming the multiple quantum well structure 3, the multiple quantum well structure is formed by metal-organic vapor phase epitaxy using only metal-organic sources (all metal-organic source MOVPE).

摘要翻译： 提供一种制造半导体器件的方法，通过该方法可以有效地生长具有大量对的多量子阱结构，同时保持良好的晶体质量，并提供半导体器件。 本发明的半导体器件制造方法包括形成具有50对以上的III-V族化合物半导体量子阱的多量子阱结构3的工序。 在形成多量子阱结构3的步骤中，通过仅使用金属 - 有机源（全部金属 - 有机源MOVPE）的金属 - 有机气相外延形成多量子阱结构。

公开(公告)号：US08198623B2

公开(公告)日：2012-06-12

申请号：US12916150

申请日：2010-10-29

申请人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Youichi Nagai ,  Hideaki Nakahata

发明人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Youichi Nagai ,  Hideaki Nakahata

IPC分类号： H01L29/06

CPC分类号： H01L27/14694 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/2258 ,  H01L31/035236 ,  H01L31/109 ,  H01L31/1844

摘要： Provided are a photodiode array and its manufacturing method, which maintain the crystalline quality of an absorption layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the photodiode array; and a method for manufacturing the epitaxial wafer. A method for manufacturing a photodiode array 1 having a plurality of absorption regions 21, includes the steps of: growing an absorption layer 7 on an n-type InP substrate 3; growing an InP window layer on the absorption layer 7; and diffusing a p-type impurity in regions, in the window layer 11, corresponding to the plurality of absorption regions 21. The window layer 11 is grown by MOVPE using only metal-organic sources, at a growth temperature equal to or lower than that of the absorption layer 7.

摘要翻译： 提供一种光电二极管阵列及其制造方法，其保持形成在III-V族半导体衬底上的吸收层的结晶质量，以获得优异的特性，并提高窗口层表面的结晶度; 用于制造光电二极管阵列的外延晶片; 以及制造外延晶片的方法。 制造具有多个吸收区域21的光电二极管阵列1的方​​法包括以下步骤：在n型InP衬底3上生长吸收层7; 在吸收层7上生长InP窗口层; 并且在窗层11中对应于多个吸收区域21的区域中扩散p型杂质。窗口层11通过仅使用金属有机源的MOVPE生长，生长温度等于或低于 的吸收层7。

公开(公告)号：US08309380B2

公开(公告)日：2012-11-13

申请号：US13446621

申请日：2012-04-13

申请人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Youichi Nagai ,  Hideaki Nakahata

发明人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Youichi Nagai ,  Hideaki Nakahata

IPC分类号： H01L21/00

CPC分类号： H01L27/14694 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/2258 ,  H01L31/035236 ,  H01L31/109 ,  H01L31/1844

摘要： Provided are a photodiode array and its manufacturing method, which maintain the crystalline quality of an absorption layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the photodiode array; and a method for manufacturing the epitaxial wafer. A method for manufacturing a photodiode array 1 having a plurality of absorption regions 21, includes the steps of: growing an absorption layer 7 on an n-type InP substrate 3; growing an InP window layer on the absorption layer 7; and diffusing a p-type impurity in regions, in the window layer 11, corresponding to the plurality of absorption regions 21. The window layer 11 is grown by MOVPE using only metal-organic sources, at a growth temperature equal to or lower than that of the absorption layer 7.

公开(公告)号：US20120168720A1

公开(公告)日：2012-07-05

申请号：US13394650

申请日：2010-07-21

申请人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Youichi Nagai

发明人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Youichi Nagai

IPC分类号： H01L31/109 ,  H01L31/18

CPC分类号： H01L31/035209 ,  H01L21/02392 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/02546 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/109 ,  H01L31/184 ,  Y02E10/544 ,  Y02P70/521

摘要： An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layer 23 grown on the absorption layer 23 contains antimony as impurity, due to the memory effect with antimony which is supplied during the growth of a GaAsSb layer of the absorption layer 21. In the group III-V compound semiconductor photo detector 11, the InP layer 23 contains antimony as impurity and is doped with silicon as n-type dopant. Although antimony impurities in the InP layer 23 generate holes, the silicon contained in the InP layer 23 compensates for the generated carriers. As a result, the second portion 23d of the InP layer 23 has sufficient n-type conductivity.

摘要翻译： 本发明的目的是提供一种III-V族化合物半导体光电检测器，其包括具有含有Sb作为V族构成元素的III-V族化合物半导体层和n型InP窗口层的吸收层，得到 在减少的暗电流。 由于在吸收层21的GaAsSb层生长期间提供的锑的记忆效应，在吸收层23上生长的InP层23含有锑作为杂质。在III-V族化合物半导体光电检测器11中， InP层23含有锑作为杂质，并掺杂有硅作为n型掺杂剂。 虽然InP层23中的锑杂质产生空穴，但是包含在InP层23中的硅补偿所生成的载流子。 结果，InP层23的第二部分23d具有足够的n型导电性。

公开(公告)号：US08866199B2

公开(公告)日：2014-10-21

申请号：US13394650

申请日：2010-07-21

申请人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Youichi Nagai

发明人： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Youichi Nagai

IPC分类号： H01L31/00 ,  H01L27/148 ,  H01L31/0352 ,  H01L21/02 ,  H01L31/0304 ,  H01L31/109 ,  H01L31/18

CPC分类号： H01L31/035209 ,  H01L21/02392 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/02546 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/109 ,  H01L31/184 ,  Y02E10/544 ,  Y02P70/521

摘要： An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layer 23 grown on the absorption layer 23 contains antimony as impurity, due to the memory effect with antimony which is supplied during the growth of a GaAsSb layer of the absorption layer 21. In the group III-V compound semiconductor photo detector 11, the InP layer 23 contains antimony as impurity and is doped with silicon as n-type dopant. Although antimony impurities in the InP layer 23 generate holes, the silicon contained in the InP layer 23 compensates for the generated carriers. As a result, the second portion 23d of the InP layer 23 has sufficient n-type conductivity.

摘要翻译： 本发明的目的是提供一种III-V族化合物半导体光电检测器，其包括具有含有Sb作为V族构成元素的III-V族化合物半导体层和n型InP窗口层的吸收层，得到 在减少的暗电流。 由于在吸收层21的GaAsSb层生长期间提供的锑的记忆效应，在吸收层23上生长的InP层23含有锑作为杂质。在III-V族化合物半导体光电检测器11中， InP层23含有锑作为杂质，并掺杂有硅作为n型掺杂剂。 虽然InP层23中的锑杂质产生空穴，但是包含在InP层23中的硅补偿所生成的载流子。 结果，InP层23的第二部分23d具有足够的n型导电性。

公开(公告)号：US20120223290A1

公开(公告)日：2012-09-06

申请号：US13451031

申请日：2012-04-19

申请人： Yasuhiro Iguchi ,  Kohei Miura ,  Hiroshi Inada ,  Youichi Nagai

发明人： Yasuhiro Iguchi ,  Kohei Miura ,  Hiroshi Inada ,  Youichi Nagai

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L21/02631 ,  H01L27/14683 ,  H01L31/03046 ,  H01L31/102 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A light-receiving element includes a group III-V compound semiconductor stacked structure that includes an absorption layer having a pn-junction therein. The stacked structure is formed on a group III-V compound semiconductor substrate. The absorption layer has a multi- quantum well structure composed of group III-V compound semiconductors, and the pn-junction is formed by selectively diffusing an impurity element into the absorption layer. A diffusion concentration distribution control layer composed of a III-V group semiconductor is disposed in contact with the absorption layer on a side of the absorption layer opposite the side adjacent to the group III-V compound semiconductor substrate. The bandgap energy of the diffusion concentration distribution control layer is smaller than that of the group III-V compound semiconductor substrate. The concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is 5×1016/cm3 or less toward the absorption layer.

摘要翻译： 光接收元件包括III-V族化合物半导体层叠结构，其包括其中具有pn结的吸收层。 叠层结构形成在III-V族化合物半导体衬底上。 吸收层具有由III-V族化合物半导体组成的多量子阱结构，并且通过选择性地将杂质元素扩散到吸收层中而形成pn结。 由III-V族半导体构成的扩散浓度分布控制层设置成与吸收层的与III-V族化合物半导体衬底相邻的一侧相反侧的吸收层接触。 扩散浓度分布控制层的带隙能量小于III-V族化合物半导体衬底的带隙能量。 在扩散浓度分布控制层中选择性扩散的杂质元素的浓度朝向吸收层为5×1016 / cm3以下。

公开(公告)号：US20070264835A1

公开(公告)日：2007-11-15

申请号：US11741226

申请日：2007-04-27

申请人： Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

发明人： Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L27/1446 ,  H01L31/1035 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A photodiode array for near infrared rays that includes photodiodes having a uniform size and a uniform shape, has high selectivity for the wavelength of received light between the photodiodes, and has high sensitivity with the aid of a high-quality semiconducting crystal containing a large amount of nitrogen, a method for manufacturing the photodiode array, and an optical measurement system are provided. The steps of forming a mask layer 2 having a plurality of openings on a first-conductive-type or semi-insulating semiconductor substrate 1, the openings being arranged in one dimension or two dimensions, and selectively growing a plurality of semiconductor layers 3a, 3b, and 3c including an absorption layer 3b in the openings are included.

摘要翻译： 包括具有均匀尺寸和均匀形状的光电二极管的近红外线光电二极管阵列对于光电二极管之间的接收光的波长具有高选择性，并且借助于含有大量的高质量半导体晶体具有高灵敏度 的氮，制造光电二极管阵列的方法和光学测量系统。 在第一导电型或半绝缘半导体衬底1上形成具有多个开口的掩模层2的步骤，所述开口一维或二维地布置，并且选择性地生长多个半导体层3a， 包括在开口中包括吸收层3b的3b和3c。

公开(公告)号：US08969851B2

公开(公告)日：2015-03-03

申请号：US12965660

申请日：2010-12-10

申请人： Hiroshi Inada ,  Yasuhiro Iguchi ,  Youichi Nagai ,  Hiroki Mori ,  Kouhei Miura

发明人： Hiroshi Inada ,  Yasuhiro Iguchi ,  Youichi Nagai ,  Hiroki Mori ,  Kouhei Miura

IPC分类号： H01L29/06 ,  H01L27/146

CPC分类号： H01L27/14636 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/1469 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

摘要： The present invention provides an image pickup device used to capture an image of an object by receiving light in a near infrared region reflected from the object. The image pickup device includes semiconductor light-receiving elements each having a light-receiving layer with a band gap wavelength of 1.65 to 3.0 μm.

摘要翻译： 本发明提供了一种用于通过在从物体反射的近红外区域中接收光来捕获对象的图像的图像拾取装置。 图像拾取装置包括各自具有带隙波长为1.65至3.0μm的光接收层的半导体光接收元件。