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11.发明授权
公开(公告)号：US5287237A
公开(公告)日：1994-02-15
申请号：US668069
申请日：1991-03-12
申请人： Masahiro Kitada , Noboru Shimizu , Hideo Tanabe , Ryoichi Nakatani , Isamu Yuito , Naoki Koyama
发明人： Masahiro Kitada , Noboru Shimizu , Hideo Tanabe , Ryoichi Nakatani , Isamu Yuito , Naoki Koyama
CPC分类号： B82Y25/00 , G01R33/09 , G11B5/3113 , G11B5/3903 , G11B5/3967 , H01F10/002 , H01F10/3218 , H01L43/08 , G11B5/3163 , Y10T428/1107 , Y10T428/12861
摘要： In order to prevent generation of Barkhausen noise of a magnetoresistance-effect element, a thin antiferromagnetic film formed of Fe-Mn-X alloy containing a third alloying element X (which serves to improve corrosion resistance of Fe-Mn alloy) by 0.1 to 20 atomic % is disposed in adjacent to a thin permalloy film. The element X is selected from the group consisting of Ir, Ru, Zr, Nb, Si, Ge, V, Co, Pt and Pd. It is particularly recommended to employ Ir of 4 to 15 atomic % or Ru of 5.5 to 15 atomic % as the element X. When one or more alloying element selected from Ru, Rh, Pt, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Ni, Cu, Al, Si and Ge is added to Fe and Mn which are essential components of the Fe-Mn-X alloy in addition to the element X, corrosion resistance of the alloy is improved more sufficiently.
摘要翻译： 为了防止产生具有磁阻效应元件的巴克豪森噪声，由含有第三合金元素X（用于提高Fe-Mn合金的耐腐蚀性）的Fe-Mn-X合金形成的薄的反铁磁性膜为0.1〜20 原子％设置在薄坡坡合金膜附近。 元素X选自Ir，Ru，Zr，Nb，Si，Ge，V，Co，Pt和Pd。 特别推荐使用4〜15原子％的Ir或5.5〜15原子％的Ru作为元素X.当选自Ru，Rh，Pt，Ti，Zr，Hf，V，Nb中的一种或多种合金元素时， 除了元素X之外，还添加了作为Fe-Mn-X合金的必要成分的Fe和Mn中的Ta，Cr，Mo，W，Ni，Cu，Al，Si和Ge，合金的耐腐蚀性提高 充分地。
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12.发明授权Magnetic apparatus with perpendicular recording medium and head having multilayered reproducing element using tunneling effect 失效具有垂直记录介质和头部的磁性装置具有使用隧道效应的多层再现元件公开(公告)号：US07292417B2
公开(公告)日：2007-11-06
申请号：US11543210
申请日：2006-10-05
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。
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13.发明申请公开(公告)号：US20070030604A1
公开(公告)日：2007-02-08
申请号：US11543210
申请日：2006-10-05
IPC分类号： G11B5/127
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。
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14.发明授权
公开(公告)号：US5218497A
公开(公告)日：1993-06-08
申请号：US807626
申请日：1991-12-13
CPC分类号： G11B5/3903 , G11B5/09 , G11B5/3948 , G11B5/3967 , G11B5/4886
摘要： A magnetic recording-reproducing apparatus is disclosed which comprises a recording inductive magnetic head, a reproducing magnetoresistive magnetic head, a read-write circuit for inputting a signal to the inductive magnetic head and for reproducing the output from the magnetoresistive magnetic head, an interface for inputting/outputting a signal between the read-write circuit and an external apparatus, and a mechanism for moving the inductive magnetic head, the magnetoresistive magnetic head and the magnetic recording medium relative to one another, wherein the information recorded on the recording medium is reproduced with an area recording density of 300 Mb/in.sup.2 or more.
摘要翻译： 公开了一种磁记录再现装置，其包括记录感应磁头，再现磁阻磁头，用于将信号输入到感应磁头并用于再现磁阻磁头的输出的读写电路，用于 在读写电路和外部装置之间输入/输出信号，以及用于相对于彼此移动感应磁头，磁阻磁头和磁记录介质的机构，其中记录在记录介质上的信息被再现 面积记录密度为300Mb / in2以上。
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公开(公告)号：US5010433A
公开(公告)日：1991-04-23
申请号：US310922
申请日：1989-02-16
CPC分类号： G11B5/3903 , H01L43/08 , H01L43/10
摘要： In a magnetoresistive magnetic head which has a permalloy film as the magnetoresistive film and also has a shunt film for applying a transverse biasing magnetic field, an Nb film having an electrical resistivity of not more than 30 .mu..OMEGA.cm is formed as the shunt film by the electron-beam evaporation method to increase the heat resistance of the magnetoresistive element, thus making it possible to increase the temperature at which the magnetic head is manufactured.
摘要翻译： 在具有坡莫合金膜作为磁阻膜并且还具有用于施加横向偏置磁场的分流膜的磁阻磁头中，形成具有不超过30μm欧米伽cm的电阻率不超过30μm的Nb膜作为分流膜 电子束蒸发方法来增加磁阻元件的耐热性，从而可以提高制造磁头的温度。
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公开(公告)号：US4814919A
公开(公告)日：1989-03-21
申请号：US124623
申请日：1987-11-24
申请人： Masahiro Kitada , Hideo Tanabe , Noboru Shimizu , Yoshihisa Kamo , Hitoshi Nakamura , Tooru Takeura
发明人： Masahiro Kitada , Hideo Tanabe , Noboru Shimizu , Yoshihisa Kamo , Hitoshi Nakamura , Tooru Takeura
CPC分类号： G11B5/3912 , G11B5/3903 , H01L43/08 , G11B5/3932
摘要： A soft-film-bias type magnetoresistive device is disclosed in which a high-permeability magnetic film, an insulating film and a permalloy film are formed on a substrate in this order, and first, second and third electrodes, which are parallel to each other, are provided on the permalloy film, to form a differential type magnetoresistive device. In this magnetoresistive device, a bias magnetic field which is generated and applied to the permalloy film between the first and second electrodes, is opposite in direction to a bias magnetic field which is generated and applied to the permalloy film between the second and third electrodes.
摘要翻译： 公开了一种软膜偏置型磁阻器件，其中在基板上依次形成高磁导率磁性膜，绝缘膜和坡莫合金膜，并且彼此平行的第一，第二和第三电极 ，设置在坡莫合金膜上，形成差动型磁阻器件。 在该磁阻器件中，产生并施加到第一和第二电极之间的坡莫合金膜上的偏置磁场在与产生并施加到第二和第三电极之间的坡莫合金膜上的偏置磁场方向相反。
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公开(公告)号：US4783711A
公开(公告)日：1988-11-08
申请号：US879567
申请日：1986-06-27
申请人： Masahiro Kitada , Hideo Tanabe , Noboru Shimizu , Hitoshi Nakamura , Kazuhiro Momata , Shigeyoshi Kato , Tooru Takeura , Tetsuo Kobayashi
发明人： Masahiro Kitada , Hideo Tanabe , Noboru Shimizu , Hitoshi Nakamura , Kazuhiro Momata , Shigeyoshi Kato , Tooru Takeura , Tetsuo Kobayashi
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903
摘要： In a magnetoresistive sensor having a magnetoresistive effect element which is held between two sheets of high permeability magnetic ferrite with insulating layers interposed between them, a ferromagnetic metal film is provided adherently to the high permeability magnetic ferrite between the ferrite and the insulating layer, a rise in temperature of the magnetoresistive effect element thereby being held down and a reproduced waveform being made sharp, and thus the characteristics of the element being improved with the life thereof prolonged.
摘要翻译： 在具有磁阻效应元件的磁电阻传感器中，该磁阻效应元件保持在介于它们之间的绝缘层的两片高磁导率磁性铁氧体之间，铁磁金属膜与铁氧体和绝缘层之间的高磁导率磁性铁氧体附着地提供， 磁阻效应元件的温度由此被压下并且再现波形变得锋利，因此元件的特性随着使用寿命而延长。
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公开(公告)号：US5401542A
公开(公告)日：1995-03-28
申请号：US18249
申请日：1993-02-16
CPC分类号： G11B5/3903 , H01L43/08 , H01L43/10
摘要： In a magnetoresistive magnetic head which has a permalloy film (2, 22) as the magnetoresistive film and also has a shunt film for applying a transverse biasing magnetic field, an Nb film (3, 23) is formed as the shunt film by the electron-beam evaporation method to increase the heat resistance of the magnetoresistive element, thus making it possible to increase the temperature at which the magnetic head is manufactured.
摘要翻译： 在具有坡莫合金膜（2,22）作为磁阻膜并且还具有用于施加横向偏置磁场的分流膜的磁阻磁头中，通过电子形成作为分流膜的Nb膜（3,23） - 波束蒸发法以增加磁阻元件的耐热性，从而可以提高制造磁头的温度。
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公开(公告)号：US4841399A
公开(公告)日：1989-06-20
申请号：US936617
申请日：1986-12-01
申请人： Masahiro Kitada , Noboru Shimizu , Hideo Tanabe , Hitoshi Nakamura , Tetsuo Kobayashi , Tooru Takeura , Kazuhiro Momata
发明人： Masahiro Kitada , Noboru Shimizu , Hideo Tanabe , Hitoshi Nakamura , Tetsuo Kobayashi , Tooru Takeura , Kazuhiro Momata
IPC分类号： G11B5/39
CPC分类号： G11B5/399 , G11B5/3903
摘要： The use of a pure zirconium film as a shunt film in a magnetoresistive head having a permalloy film as a magnetoresistive film and a shunt film for application of a transverse biasing magnetic field serves to improve the heat resistance of the magnetoresistive element and allows an increase in the temperature used in the process for producing a magnetic head.
摘要翻译： 在具有坡莫合金膜作为磁阻膜的磁阻头中使用纯锆膜作为分流膜，以及用于施加横向偏置磁场的分流膜用于提高磁阻元件的耐热性，并且允许增加 用于制造磁头的过程中使用的温度。
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20.发明授权
公开(公告)号：US5371643A
公开(公告)日：1994-12-06
申请号：US927955
申请日：1992-08-11
CPC分类号： G11B5/3903 , Y10T29/49052
摘要： A magnetoresistive head is fabricated with a high yield rate by preventing the electrode film from breaking down. An upper shield film is formed with an electrode separation layer and an upper gap film disposed between it and the electrode film. The electrode film is prevented from being etched when the upper shield film is subjected to ion milling as a result. Further, the upper gap film is laid on top of the electrode separation layer, and a lead is satisfactorily protected and prevented from being exposed. Thus, the upper shield film and the lead are prevented from becoming short-circuited as a result of the disconnection of the electrode film and the exposure of the lead.
摘要翻译： 通过防止电极膜破裂，以高产率制造磁阻头。 上部屏蔽膜形成有电极分离层和设置在其与电极膜之间的上间隙膜。 因此，当上屏蔽膜经受离子铣削时，防止电极膜被蚀刻。 此外，上间隙膜被放置在电极分离层的顶部，并且引线被令人满意地保护并防止暴露。 因此，由于电极膜的断开和引线的暴露，防止了上屏蔽膜和引线的短路。
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