公开(公告)号：US06761900B2

公开(公告)日：2004-07-13

申请号：US10080526

申请日：2002-02-21

申请人： Jutaro Shudo ,  Ichiro Mori

发明人： Jutaro Shudo ,  Ichiro Mori

IPC分类号： A61F1302

CPC分类号： A61K9/7061 ,  A61F2013/0296 ,  A61K31/04 ,  Y02A50/409

摘要： Topical patch preparations that contain a delayed-type hypersensitivity inducer, e.g., 1-dichloro-2,4-dinitrobenzene (DNCB), and methods for using the same are provided. The subject topical patch preparations are made up of an adhesive gel composition that is present on a support, where the adhesive gel composition includes the delayed-type hypersensitivity inducer, a water-soluble polymer gel, water and a water holding agent. In using the subject topical patch preparations, the topical patch preparations are applied to a skin surface of a subject and maintained at the site of application for a period of time sufficient for an effective amount of the delayed-type hypersensitivity inducer to be administered to the subject, where this maintenance period typically does not exceed about 60 minutes. The subject invention finds use in a variety of applications where the administration of a delayed-type hypersensitivity inducer is desired, and is particularly suited for use in the treatment of HIV associated disease conditions, e.g., AIDS.

摘要翻译： 提供含有延迟型超敏反应诱导剂例如1-氯-2,4-二硝基苯（DNCB）的局部贴剂制剂及其使用方法。 本发明的局部贴剂制剂由存在于载体上的粘合凝胶组合物组成，其中粘合性凝胶组合物包括延迟型超敏感诱导剂，水溶性聚合物凝胶，水和保水剂。 在使用本发明的局部贴剂制剂时，将局部贴剂制剂施用于受试者的皮肤表面并保持在施用部位足以使有效量的延迟型超敏反应诱导剂施用于 该维护期通常不超过约60分钟。 本发明可用于期望延迟型超敏反应诱导剂的施用的多种应用，并且特别适合用于治疗HIV相关疾病病症，例如艾滋病。

公开(公告)号：US06226074B1

公开(公告)日：2001-05-01

申请号：US09510244

申请日：2000-02-22

申请人： Tadahito Fujisawa ,  Soichi Inoue ,  Hiroshi Nomura ,  Ichiro Mori

发明人： Tadahito Fujisawa ,  Soichi Inoue ,  Hiroshi Nomura ,  Ichiro Mori

IPC分类号： G03B2742

CPC分类号： G03F7/70633

摘要： An exposure monitor mask used with an exposure system for manufacturing ICs includes an exposure detecting pattern having at least three patterns arranged in one direction, the exposure detecting pattern including a pair of relative position detecting patterns with at least one variable intensity pattern that allows the intensity of light transmitted therethrough to vary monotonously in the one direction disposed between the pair of relative position detecting patterns.

摘要翻译： 与用于制造IC的曝光系统一起使用的曝光监视器掩模包括具有沿一个方向布置的至少三个图案的曝光检测图案，曝光检测图案包括具有至少一个可变强度图案的一对相对位置检测图案，该可变强度图案允许强度 透过的光线在配置在一对相对位置检测图案之间的一个方向上单调变化。

公开(公告)号：US20060106058A1

公开(公告)日：2006-05-18

申请号：US10530986

申请日：2003-10-15

申请人： Joelle Burgess ,  James Callahan ,  Toshihiro Hamajima ,  Satoru Ida ,  Ichiro Mori ,  Jun Tang

发明人： Joelle Burgess ,  James Callahan ,  Toshihiro Hamajima ,  Satoru Ida ,  Ichiro Mori ,  Jun Tang

IPC分类号： A61K31/4709 ,  C07D215/38 ,  A61K31/47 ,  C07D405/02 ,  C07D403/02

CPC分类号： C07D401/12 ,  C07D215/54 ,  C07D405/12

摘要： 3-carboxy quinoline derivatives, which are useful as YAK3 inhibitors are described herein. The described invention also includes methods of making such 3-carboxy quinoline derivatives as well as methods of using the same in the treatment of diseases mediated by inappropriate YAK3 activity.

公开(公告)号：US20050177811A1

公开(公告)日：2005-08-11

申请号：US11105431

申请日：2005-04-14

申请人： Toshiya Kotani ,  Satoshi Tanaka ,  Koji Hashimoto ,  Soichi Inoue ,  Ichiro Mori

发明人： Toshiya Kotani ,  Satoshi Tanaka ,  Koji Hashimoto ,  Soichi Inoue ,  Ichiro Mori

IPC分类号： H01L21/66 ,  G06F17/50 ,  B05C11/00 ,  G01R31/26 ,  G03C5/00 ,  G03C8/00 ,  G03F9/00 ,  G06F9/45

CPC分类号： H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a method of setting a process parameter for use in manufacturing a semiconductor integrated circuit, comprising correcting a first pattern by using process parameter information to obtain a second pattern, the first pattern being one which corresponds to a design layout of the semiconductor integrated circuit, predicting a third pattern by using the process parameter information, the third pattern being one which corresponds to the second pattern and which is to be formed on a semiconductor wafer in an etching process, obtaining an evaluation value by comparing the third pattern with the first pattern, determining whether the evaluation value satisfies a preset condition, and changing the process parameter information when the evaluation value is found not to satisfy the preset condition.

摘要翻译： 公开了一种设置用于制造半导体集成电路的工艺参数的方法，包括通过使用工艺参数信息来校正第一图案以获得第二图案，第一图案是对应于半导体集成电路的设计布局的图案 ，通过使用处理参数信息来预测第三图案，在蚀刻工艺中，第三图案是对应于第二图案并且将形成在半导体晶片上的图案，通过将第三图案与第一图案进行比较来获得评估值 判定评估值是否满足预设条件，以及当评估值不满足预设条件时，改变处理参数信息。

公开(公告)号：US07100146B2

公开(公告)日：2006-08-29

申请号：US10636577

申请日：2003-08-08

申请人： Takashi Sato ,  Takuya Kouno ,  Takashi Sakamoto ,  Yoshiyuki Shioyama ,  Tatsuhiko Higashiki ,  Ichiro Mori ,  Noboru Yokoya

发明人： Takashi Sato ,  Takuya Kouno ,  Takashi Sakamoto ,  Yoshiyuki Shioyama ,  Tatsuhiko Higashiki ,  Ichiro Mori ,  Noboru Yokoya

IPC分类号： G06F17/50

CPC分类号： G03F9/7092

摘要： A design system of an alignment mark for manufacturing a semiconductor device includes a memory which stores at least mark data including pattern information regarding plural kinds of marks and process data including condition information of manufacturing processes, and a first process simulator which simulates a substrate structure before patterning based on the process data, the substrate structure being formed in an identified manufacturing process. Moreover, the design system includes a second process simulator which simulates a processed shape of an identified mark after the patterning based on the simulated substrate structure and the process data, the mark formed in the manufacturing process, a signal waveform simulator which simulates a detection signal waveform of the mark, the waveform being obtained from the simulated processed shape of the mark, and a signal evaluation device which evaluates a suitability of the mark for the identified manufacturing process based on the simulated detection signal waveform.

摘要翻译： 用于制造半导体器件的对准标记的设计系统包括：存储器，其至少存储包括关于多种标记的图案信息的标记数据和包括制造过程的条件信息的处理数据;以及第一处理模拟器，其模拟前面的衬底结构 基于工艺数据构图，基板结构在识别的制造工艺中形成。 此外，设计系统包括第二处理模拟器，其基于模拟的基板结构和处理数据，在制造​​过程中形成的标记，模拟检测信号的信号波形模拟器，模拟图案化之后的识别标记的处理形状 标记的波形，从标记的模拟处理形状获得的波形，以及基于模拟的检测信号波形来评估用于所识别的制造处理的标记的适合性的信号评估装置。

公开(公告)号：US06376139B1

公开(公告)日：2002-04-23

申请号：US09671502

申请日：2000-09-27

申请人： Tadahito Fujisawa ,  Soichi Inoue ,  Kenji Kawano ,  Shinichi Ito ,  Ichiro Mori

发明人： Tadahito Fujisawa ,  Soichi Inoue ,  Kenji Kawano ,  Shinichi Ito ,  Ichiro Mori

IPC分类号： G03F900

CPC分类号： G03F7/70625 ,  G03F7/70633 ,  G03F7/70641

摘要： A control method for an exposure apparatus, in which an exposure amount and a focus value are set in transferring a circuit pattern on a mask onto a resist formed on a wafer by the exposure apparatus, includes the steps of arranging, on the mask, an exposure amount monitor mark and a focus monitor mark used to separately monitor the effective exposure amount and the focus value on the wafer, transferring the exposure amount monitor mark and the focus monitor mark onto the resist to form an exposure amount monitor pattern and a focus monitor pattern, measuring the states of the exposure amount monitor pattern and the focus monitor pattern at least at one of timings after exposure, after post exposure baking, during a cooling process after baking, during a process after cooling, during development, and after development, on the basis of the measurement results, calculating the difference between an optimum exposure amount value and an exposure amount set value set in the exposure apparatus and the difference between an optimum focus value and a focus set value set in the exposure apparatus in transferring the exposure amount monitor mark and the focus monitor mark onto the resist, and changing the focus set value and the exposure amount set value of the exposure apparatus in accordance with the calculated differences.

摘要翻译： 一种曝光装置的控制方法，其中设置曝光量和聚焦值以将掩模上的电路图案转印到通过曝光装置在晶片上形成的抗蚀剂上的步骤包括以下步骤：在掩模上布置 曝光量监视标记和用于分别监视晶片上的有效曝光量和聚焦值的聚焦监视器标记，将曝光量监视标记和聚焦监视标记转印到抗蚀剂上以形成曝光量监视器图案和聚焦监视器 至少在曝光后的定时，曝光后烘烤，烧成后的冷却过程中，冷却后，显影处理和显影后的处理中，至少测定曝光量监视器图案和聚焦监视器图案的状态， 基于测量结果，计算最佳曝光量值与曝光设定中设定的曝光量设定值之间的差 以及将曝光量监视标记和聚焦监视标记转印到抗蚀剂上的曝光装置中设置的最佳聚焦值和聚焦设定值之间的差异，并且改变曝光的聚焦设定值和曝光量设定值 仪器按照计算出的差异。

公开(公告)号：US5541310A

公开(公告)日：1996-07-30

申请号：US236427

申请日：1994-04-29

申请人： Eric R. Ward ,  Sandra Volrath ,  Shinichi Koizumi ,  Sachiyo Tada ,  Ichiro Mori ,  Genji Iwasaki

发明人： Eric R. Ward ,  Sandra Volrath ,  Shinichi Koizumi ,  Sachiyo Tada ,  Ichiro Mori ,  Genji Iwasaki

IPC分类号： A01H5/00 ,  C12N5/10 ,  C12N9/88 ,  C12N15/09 ,  C12N15/60 ,  C12N15/82 ,  C12Q1/527 ,  C12N15/29 ,  C12N15/63

CPC分类号： C12N9/88 ,  C12N15/8278 ,  C12Q1/527

摘要： Disclosed are plants, plant tissue and plant seed, whose growth and development are tolerant of, or resistant to various imidazole and triazole herbicidal compounds, at levels which normally are inhibitory to the plants. The tolerance or resistance is conferred by an altered imidazoleglycerol phosphate dehydratase (IGPD). Plant genes encoding wild-type and altered IGPD, purified plant IGPD, methods of isolating IGPD from plants, and methods of using both purified IGPD and IGPD-encoding genes are also disclosed.

摘要翻译： 公开了植物，植物组织和植物种子，其生长发育对各种咪唑和三唑除草化合物具有耐受性或耐受性，其水平通常对植物具有抑制作用。 耐受性或抗性由改变的咪唑磷酸脱水酶（IGPD）赋予。 还公开了编码野生型和改变的IGPD的植物基因，纯化植物IGPD，从植物分离IGPD的方法，以及使用纯化的IGPD和IGPD编码基因的方法。

公开(公告)号：US20100247475A1

公开(公告)日：2010-09-30

申请号：US12679244

申请日：2008-09-19

申请人： Ichiro Mori ,  Shunichi Akiba

发明人： Ichiro Mori ,  Shunichi Akiba

IPC分类号： A61L9/01 ,  C07C49/29 ,  C07C49/303 ,  C07C49/297 ,  C07D313/00 ,  C07D321/00 ,  C07C69/00 ,  C07C33/025 ,  C07C33/02 ,  C07C43/02 ,  C07C13/16

CPC分类号： C12N9/99 ,  A61K8/35 ,  A61K8/4973 ,  A61K2800/782 ,  A61Q15/00

摘要： Provided are a novel β-glucuronidase inhibitor including a compound selected from a macrocyclic ketone, a ketone, a macrocyclic lactone, a macrocyclic oxalactone, an ester, an aldehyde, an alcohol, and a terpene of specific kinds, and an environmental hygiene product and a sanitary product each containing the β-glucuronidase inhibitor. Also provided are a composition for suppressing the generation of urine odor and a method of suppressing the generation of urine odor each using a β-glucuronidase inhibitor.

摘要翻译： 本发明提供了一种新颖的 - 葡糖醛酸糖苷酶抑制剂，其包括选自大环酮，酮，大环内酯，大环草内酯，酯，醛，醇和特定种类的萜烯的化合物，以及环境卫生产品 和每个含有葡萄糖醛酸糖苷酶抑制剂的卫生产品。 还提供了抑制尿臭味的产生的组合物，以及使用葡萄糖醛酸糖苷酶抑制剂抑制尿臭的产生的方法。

公开(公告)号：US07482455B2

公开(公告)日：2009-01-27

申请号：US10530986

申请日：2003-10-15

申请人： Joelle L. Burgess ,  James F. Callahan ,  Toshihiro Hamajima ,  Satoru Ida ,  Ichiro Mori ,  Jun Tang

发明人： Joelle L. Burgess ,  James F. Callahan ,  Toshihiro Hamajima ,  Satoru Ida ,  Ichiro Mori ,  Jun Tang

IPC分类号： C07D215/38

CPC分类号： C07D401/12 ,  C07D215/54 ,  C07D405/12

摘要： 3-carboxy quinoline derivatives, which are useful as YAK3 inhibitors are described herein. The described invention also includes methods of making such 3-carboxy quinoline derivatives as well as methods of using the same in the treatment of diseases mediated by inappropriate YAK3 activity.

摘要翻译： 本文描述了可用作YAK3抑制剂的3-羧基喹啉衍生物。 所述的发明还包括制备这种3-羧基喹啉衍生物的方法以及用于治疗由不适当的YAK3活性介导的疾病的方法。

公开(公告)号：US07120882B2

公开(公告)日：2006-10-10

申请号：US11105431

申请日：2005-04-14

申请人： Toshiya Kotani ,  Satoshi Tanaka ,  Koji Hashimoto ,  Soichi Inoue ,  Ichiro Mori

发明人： Toshiya Kotani ,  Satoshi Tanaka ,  Koji Hashimoto ,  Soichi Inoue ,  Ichiro Mori

IPC分类号： G06F17/50

CPC分类号： H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a method of setting a process parameter for use in manufacturing a semiconductor integrated circuit, comprising correcting a first pattern by using process parameter information to obtain a second pattern, the first pattern being one which corresponds to a design layout of the semiconductor integrated circuit, predicting a third pattern by using the process parameter information, the third pattern being one which corresponds to the second pattern and which is to be formed on a semiconductor wafer in an etching process, obtaining an evaluation value by comparing the third pattern with the first pattern, determining whether the evaluation value satisfies a preset condition, and changing the process parameter information when the evaluation value is found not to satisfy the preset condition.

摘要翻译： 公开了一种设置用于制造半导体集成电路的工艺参数的方法，包括通过使用工艺参数信息来校正第一图案以获得第二图案，第一图案是对应于半导体集成电路的设计布局的图案 ，通过使用处理参数信息来预测第三图案，在蚀刻工艺中，第三图案是对应于第二图案并且将形成在半导体晶片上的图案，通过将第三图案与第一图案进行比较来获得评估值 判定评估值是否满足预设条件，以及当评估值不满足预设条件时，改变处理参数信息。