公开(公告)号：US5006928A

公开(公告)日：1991-04-09

申请号：US443481

申请日：1989-11-30

申请人： Kazuhiro Kawajiri ,  Takashi Miida ,  Kiyoshi Inoue

发明人： Kazuhiro Kawajiri ,  Takashi Miida ,  Kiyoshi Inoue

IPC分类号： H04N5/225 ,  H04N9/04

CPC分类号： H04N9/045 ,  H04N2005/2255

摘要： An image processing method for use in an electronic video endoscopy system in which R, G and B surface sequential color signals are obtained from a CCD disposed in the leading end portion of an endoscope. The surface sequential color signals are converted simultaneously wherein memories corresponding to the respective colors are used to thereby obtain synchronous color signals. In the image processing method, the odd and even fields of the CCD are interline transferred sequentially within one field period to thereby obtain the above-mentioned surface sequential color signals, and data for each of horizontal scanning lines are read out alternately from odd and even field data once stored in the above-mentioned respective memories to thereby complete frame data so as to obtain the above-mentioned synchronous color signals.

摘要翻译： 一种用于电子视频内窥镜系统的图像处理方法，其中从设置在内窥镜的前端部的CCD获得R，G和B表面顺序彩色信号。 表面顺序颜色信号被同时转换，其中使用与各种颜色对应的存储器，从而获得同步彩色信号。 在图像处理方法中，CCD的奇数和偶数场在一个场周期内顺序传送，从而获得上述表面顺序彩色信号，并且从奇数和偶数交替地读出每个水平扫描线的数据 场数据一旦存储在上述各个存储器中，从而完成帧数据，以便获得上述同步颜色信号。

公开(公告)号：US4739384A

公开(公告)日：1988-04-19

申请号：US790014

申请日：1985-10-22

申请人： Akio Higashi ,  Haruji Shinada ,  Kazuhiro Kawajiri

发明人： Akio Higashi ,  Haruji Shinada ,  Kazuhiro Kawajiri

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/357 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H01L27/14

CPC分类号： H01L27/14665

摘要： A solid-state imaging device in which the possibility of defect formation in a photoconductive layer is substantially eliminated by the use of a multi-layered structure. A photoconductive film unit and a transparent electrode are formed in that order on a semiconductor substrate in which is formed a scanning circuit composed of a plurality of picture elements defined by respective electrodes on the semiconductor substrate and the transparent electrode. The photoconductive film unit is composed of a polycrystalline silicon film and an amorphous silicon film that are disposed in that order on the semiconductor substrate.

摘要翻译： 通过使用多层结构，基本上消除了在光电导层中形成缺陷的可能性的固态成像装置。 在形成由半导体衬底上的各个电极和透明电极限定的多个像素构成的扫描电路的半导体衬底上依次形成光电导膜单元和透明电极。 光电导膜单元由在半导体衬底上依次设置的多晶硅膜和非晶硅膜构成。

公开(公告)号：US4714950A

公开(公告)日：1987-12-22

申请号：US749400

申请日：1985-06-27

申请人： Kazuhiro Kawajiri ,  Hiroshi Tamura ,  Haruji Shinada ,  Mitsuo Saito ,  Yuzo Mizobuchi

发明人： Kazuhiro Kawajiri ,  Hiroshi Tamura ,  Haruji Shinada ,  Mitsuo Saito ,  Yuzo Mizobuchi

IPC分类号： H01L31/10 ,  H01L27/146 ,  H01L31/0376 ,  H01L31/09 ,  H01L31/103 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L31/03762 ,  H01L27/14665 ,  H01L31/095 ,  H01L31/103 ,  Y02E10/548

摘要： A solid-state photo sensor device includes a first electrode layer for allowing light to pass therethrough, a first amorphous silicon layer of one conductivity type formed below the first electrode layer, a second amorphous silicon layer of a conductivity type, other than the one conductivity type, disposed below the first amorphous silicon layer, and an output circuit for delivering in the form of an electric current photocarriers excited at least in the second amorphous silicon layer. The first and second amorphous silicon layers each contain inpurity elements whose concentration ranges from about 0 molPPM to 200 molPPM. The output circuit delivers as an electric current also photocarriers excited in the first amorphous silicon layer.

摘要翻译： 固态光传感器装置包括：第一电极层，用于允许光通过;第一非导电类型的第一非晶硅层，形成在第一电极层的下方;导电型的第二非晶硅层，除了一个电导率 配置在第一非晶硅层的下方，以及输出电路，用于以至少在第二非晶硅层中激发的电流光载流子的形式进行输送。 第一和第二非晶硅层各自含有浓度范围为约0molPPM至200molPPM的不纯度元素。 输出电路作为电流传输也在第一非晶硅层中激发的光载流子。

公开(公告)号：US4694317A

公开(公告)日：1987-09-15

申请号：US790015

申请日：1985-10-22

申请人： Akio Higashi ,  Haruji Shinada ,  Kazuhiro Kawajiri ,  Yoshihiro Ono ,  Mitsuo Saitou ,  Hiroshi Tamura ,  Mitsuru Ikeda

发明人： Akio Higashi ,  Haruji Shinada ,  Kazuhiro Kawajiri ,  Yoshihiro Ono ,  Mitsuo Saitou ,  Hiroshi Tamura ,  Mitsuru Ikeda

IPC分类号： H01L27/146 ,  H01L31/0224 ,  H01L45/00 ,  H01L23/48 ,  H01L27/14 ,  H01L29/06

CPC分类号： H01L31/022466 ,  H01L27/14665

摘要： A solid-state imaging device having a scanning circuit and a photoconductive film formed in layers on a semiconductor substrate, and a process for forming the same, wherein high resolution with substantially no color mixing is attained. An electrode layer is formed over the semiconductor substrate for providing the plural electrodes, and a photoconductive film is formed over the electrode layer. A first transparent electrode is produced over the photoconductive film, after which a resist pattern is formed on the first transparent electrode layer corresponding to the pixels. The first transparent layer and the photoconductive film are etched according to the resist pattern to spatially isolate adjacent pixels in the first transparent layer and the photoconductive film. Adjacent pixels are isolated by etching, using the resist pattern, that part of the electrode layer on which are disposed the first transparent electrode layer and the photoconductive film between isolated pixels.

摘要翻译： 一种具有在半导体衬底上形成的扫描电路和光电导膜的固态成像器件及其形成方法，其中实现基本上不混色的高分辨率。 在半导体衬底上形成用于提供多个电极的电极层，并且在电极层上形成光电导膜。 在光电导膜上产生第一透明电极，然后在对应于像素的第一透明电极层上形成抗蚀剂图案。 根据抗蚀剂图案蚀刻第一透明层和光电导膜，以空间隔离第一透明层和光电导膜中的相邻像素。 使用抗蚀剂图案，通过蚀刻来隔离相邻像素，其中设置在第一透明电极层和分离像素之间的光电导膜的电极层的那部分。

公开(公告)号：US4523214A

公开(公告)日：1985-06-11

申请号：US394499

申请日：1982-07-02

申请人： Masataka Hirose ,  Kazuhiro Kawajiri ,  Yosuke Nakajima

发明人： Masataka Hirose ,  Kazuhiro Kawajiri ,  Yosuke Nakajima

IPC分类号： H01L27/146 ,  H01L31/105 ,  H01L27/14

CPC分类号： H01L27/14665 ,  H01L31/1055

摘要： A solid state image pickup device comprising a semiconductor substrate provided with light detecting sections and a scanning circuit for sequentially selecting the signals detected by the light detecting sections, wherein each light detecting section contains a silicon layer in which microcrystalline silicon and amorphous silicon are uniformly distributed and the crystal structure varies substantially continuously throughout. The light detecting section may further contain a hydrogenated amorphous silicon layer containing 6 to 37 atomic % of nitrogen, which is positioned on the silicon layer defined above. The light detecting section is connected with electrodes, one of which is transparent.

摘要翻译： 一种固态摄像装置，包括设置有光检测部分的半导体衬底和用于顺序选择由光检测部分检测的信号的扫描电路，其中每个光检测部分包含其中微晶硅和非晶硅均匀分布的硅层 并且晶体结构整体基本连续变化。 光检测部还可以包含位于上述硅层上的含有6〜37原子％的氮的氢化非晶硅层。 光检测部与电极连接，其中一个是透明的。

公开(公告)号：US5777675A

公开(公告)日：1998-07-07

申请号：US988334

申请日：1992-12-09

申请人： Takashi Miida ,  Kazuhiro Kawajiri ,  Jun Hasegawa ,  Isao Taniguchi

发明人： Takashi Miida ,  Kazuhiro Kawajiri ,  Jun Hasegawa ,  Isao Taniguchi

IPC分类号： G02B7/34 ,  G01J1/10 ,  G01J1/16 ,  G01J1/44 ,  G03B7/28 ,  G03B13/36 ,  H04N5/235 ,  H04N5/232 ,  H04N5/335

CPC分类号： G01J1/44 ,  G01J1/10 ,  G01J1/1626 ,  H04N5/2351

摘要： An automatic light measuring device for an image pickup device includes a pair of line sensors suitable for an automatic focusing adjustment and disposed on a semiconductor chip at positions spaced apart by a predetermined distances, an integration time controller for generating an integration control signal for controlling the charge accumulation by incident light by detecting the amount of charges accumulated in the line sensors, a first exposure amount detector for calculating the intensity of incident light from the integration control signal, a second exposure amount detector inclusive of photoelectric conversion elements formed on the semiconductor chip, for detecting the amount of incident light, a pair of lenses mounted above the pair of line sensors for focusing the image of substantially the same subject within the central area of the field of view, and an optical system for applying light within the area broader than the central area of the field of view to the surface of the semiconductor chip inclusive of the photoelectric conversion elements. The photoelectric conversion elements are disposed between the pair of line sensors. The optical system may be made of an acrylic rod, light focusing fibers, retrofocus lens, or the like.

摘要翻译： 一种用于图像拾取装置的自动光测量装置包括一对适合于自动聚焦调节的线传感器，并且在间隔开预定距离的位置处设置在半导体芯片上，积分时间控制器用于产生用于控制 通过检测在线传感器中累积的电荷量的入射光的电荷积累，用于从积分控制信号计算入射光强度的第一曝光量检测器，包括形成在半导体芯片上的光电转换元件的第二曝光量检测器 ，用于检测入射光量，安装在一对线传感器上方的一对透镜，用于将基本相同的被摄体的图像聚焦在视场的中心区域内，以及用于在该区域内施加光的光学系统 比中央地区的视野到了表面 包括光电转换元件的半导体芯片。 光电转换元件设置在一对线传感器之间。 光学系统可以由丙烯酸棒，聚光纤维，后焦距透镜等制成。

公开(公告)号：US5025319A

公开(公告)日：1991-06-18

申请号：US371783

申请日：1989-06-27

申请人： Hideki Mutoh ,  Kazuya Oda ,  Kazuhiro Kawajiri

发明人： Hideki Mutoh ,  Kazuya Oda ,  Kazuhiro Kawajiri

IPC分类号： H04N5/353 ,  H04N5/359 ,  H04N5/372

CPC分类号： H04N5/3595 ,  H04N5/353

摘要： A solid image pickup device driving method is provided in which a charge storage type solid image pickup device of a frame transfer interline system is used to detect still picture signals. Either the odd-numbered or even-numbered field elements are transferred to charge transfer paths in a light receiving section and next transferred to a storage section. The remaining field elements are then transferred to charge transfer paths in the light receiving section. The field elemeents residing in the storage section are then transferred to a horizontal CCD for output. Finally, the remaining field elements, having been stored in the charge transfer paths in the light receiving section, are transferred to the storage section, and then transferred to the horizontal CCD for output. The driving method provides for increased vertical resolution and facilitates miniaturization of the device. In addition, the shutter periods and/or the signal amplification factors of the odd-numbered and even-numbered fields are adjusted so that, with respect to the picture elements of the odd-numbered and even-numbered fields, with light applied under the same conditions, the output signals of the odd-numbered and even-numbered fields obtained through scanning are equal to each other. Therefore, the odd-numbered field scanning operation and the even-numbered field scanning operation each possess an equal ratio of the video signal to smear, and field flickering is therefore suppressed.

摘要翻译： 提供了一种固态图像拾取装置驱动方法，其中使用帧转移行间系统的电荷存储型固体摄像装置来检测静止图像信号。 奇数或偶数场元件被传送到光接收部分中的电荷传输路径，并且接下来传送到存储部分。 然后将剩余的场元件转移到光接收部分中的电荷传输路径。 然后驻留在存储部分中的场元素被传送到水平CCD以进行输出。 最后，已经存储在光接收部分中的电荷传送路径中的剩余场元件被传送到存储部分，然后被传送到水平CCD以输出。 该驱动方法提供了增加的垂直分辨率并且有助于该装置的小型化。 此外，奇数场和偶数场的快门周期和/或信号放大因子被调节，使得对于奇数和偶数场的像素，施加在 相同条件下，通过扫描获得的奇数和偶数场的输出信号彼此相等。 因此，奇数场扫描动作和偶数场扫描动作各自具有视频信号与画面的相等比例，因此可以抑制场闪烁。

公开(公告)号：US4735908A

公开(公告)日：1988-04-05

申请号：US77157

申请日：1987-07-24

申请人： Akio Higashi ,  Haruji Shinada ,  Kazuhiro Kawajiri ,  Yoshihiro Ono ,  Mitsuo Saitou ,  Hiroshi Tamura ,  Mitsuru Ikeda

发明人： Akio Higashi ,  Haruji Shinada ,  Kazuhiro Kawajiri ,  Yoshihiro Ono ,  Mitsuo Saitou ,  Hiroshi Tamura ,  Mitsuru Ikeda

IPC分类号： H01L27/146 ,  H01L31/0224 ,  H01L21/283

CPC分类号： H01L31/022466 ,  H01L27/14665

摘要： A solid-state imaging device having a scanning circuit and a photoconductive film formed in layers on a semiconductor substrate, and a process for forming the same, wherein high resolution with substantially no color mixing is attained. An electrode layer is formed over the semiconductor substrate for providing the plural electrodes, and a photoconductive film is formed over the electrode layer. A first transparent electrode is produced over the photoconductive film, after which a resist pattern is formed on the first transparent electrode layer corresponding to the pixels. The first transparent layer and the photoconductive film are etched according to the resist pattern to spatially isolate adjacent pixels in the first transparent layer and the photoconductive film. Adjacent pixels are isolated by etching, using the resist pattern, that part of the electrode layer on which are disposed the first transparent electrode layer and the photoconductive film between isolated pixels.

摘要翻译： 一种具有在半导体衬底上形成的扫描电路和光电导膜的固态成像器件及其形成方法，其中实现基本上不混色的高分辨率。 在半导体衬底上形成用于提供多个电极的电极层，并且在电极层上形成光电导膜。 在光电导膜上产生第一透明电极，然后在对应于像素的第一透明电极层上形成抗蚀剂图案。 根据抗蚀剂图案蚀刻第一透明层和光电导膜，以空间隔离第一透明层和光电导膜中的相邻像素。 使用抗蚀剂图案，通过蚀刻来隔离相邻像素，其中设置在第一透明电极层和分离像素之间的光电导膜的电极层的那部分。

公开(公告)号：US06822682B1

公开(公告)日：2004-11-23

申请号：US09629621

申请日：2000-07-31

申请人： Kazuhiro Kawajiri ,  Shinji Uya

发明人： Kazuhiro Kawajiri ,  Shinji Uya

IPC分类号： H04N5335

CPC分类号： H01L27/14812 ,  H04N5/3728 ,  H04N5/3765

摘要： A solid state image pickup device including: a plurality of pixel groups disposed on a two-dimensional plane defined by horizontal and vertical directions, the plurality of pixel groups being juxtaposed in the horizontal direction, each of the pixel groups including a first pixel column and a second pixel column, the first pixel column including a plurality of pixels regularly disposed at a first pixel pitch in the vertical direction, the second pixel column including a plurality of pixels regularly disposed at a half pitch of the first pixel pitch in the vertical direction relative to the first pixel column, the second pixel columns being disposed in the horizontal direction at a half pitch of a second pixel pitch of pixels of adjacent first pixel columns of the pixel groups; a first separation region formed between pairs of the pixel groups adjacent in the horizontal direction; a single vertical charge transfer path extending in the vertical direction and weaving between the first and second pixel columns of each of the pixel groups; and a horizontal charge transfer path formed at one ends of a plurality of the vertical charge transfer paths for receiving electric charges transferred from the vertical charge transfer paths and transferring the electric charges in the horizontal direction. A patterning precision of horizontal charge transfer electrodes can be mitigated.

摘要翻译： 一种固态图像拾取装置，包括：设置在由水平和垂直方向限定的二维平面上的多个像素组，所述多个像素组在水平方向上并列，每个像素组包括第一像素列和 第二像素列，第一像素列包括在垂直方向上以第一像素间距规则地布置的多个像素，第二像素列包括在垂直方向上以第一像素间距的半间距规则地设置的多个像素 相对于第一像素列，第二像素列以像素组的相邻第​​一像素列的像素的第二像素间距的半间距在水平方向上布置; 在水平方向相邻的像素组对之间形成的第一分离区域; 在垂直方向上延伸的单个垂直电荷传输路径，并且编织在每个像素组的第一和第二像素列之间; 以及形成在多个垂直电荷传输路径的一端处的水平电荷传输路径，用于接收从垂直电荷传输路径传送的电荷并在水平方向上传送电荷。 可以减轻水平电荷转移电极的图案化精度。

公开(公告)号：US06448596B1

公开(公告)日：2002-09-10

申请号：US09928508

申请日：2001-08-14

申请人： Kazuhiro Kawajiri ,  Takashi Miida

发明人： Kazuhiro Kawajiri ,  Takashi Miida

IPC分类号： H01L31062

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14623

摘要： The present invention relates to a solid-state imaging device. More specifically, the invention relates to the solid-state imaging device, which uses a MOS image sensor of a threshold voltage modulation system used for a video camera, an electronic camera, an image input camera, a scanner, a facsimile or the like. The solid-state imaging device is constructed in a manner that pixels are arrayed in a matrix form. Each pixel includes: a photo-diode for generating photo-generated charges by light irradiation; and an insulated gate field effect transistor for light signal detection, provided adjacently to the photo-diode, for storing the photo-generated charges beneath a channel region under a gate electrode, and modulating a threshold voltage by the stored photo-generated charges to detect a light signal. The gate electrodes are disposed at at least four directions around a periphery of the photo-diode, and the photo-diodes are disposed at at least four directions around a periphery of the gate electrode.