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72 条记录 (耗时 0.033 秒)

    Cold cathode fluorescent lamp and backlight unit
    11.
    发明授权
    Cold cathode fluorescent lamp and backlight unit 失效
    冷阴极荧光灯和背光单元

    公开(公告)号：US07199523B2

    公开(公告)日：2007-04-03

    申请号：US10979306

    申请日：2004-11-02

    申请人： Kazuhiro Matsuo ,  Kenji Yamada

    发明人： Kazuhiro Matsuo ,  Kenji Yamada

    IPC分类号： H01J17/16

    CPC分类号： C09K11/7734 ,  C03C3/091 ,  C03C3/093 ,  C03C4/085 ,  C09K11/7777 ,  C09K11/7787 ,  G02F1/133604 ,  H01J61/302 ,  H01J61/44

    摘要： A cold cathode fluorescent lamp includes a light-emitting tube made from borosilicate glass doped with 5.1–9.0 wt % of an ultraviolet light absorbent, the light-emitting tube having phosphors coated on an inner surface thereof, and mercury and a rare gas enclosed therein. As a result, 313 nm UV light in addition to 254 nm UV light is sufficiently blocked, thus enabling the provision of cost-effective CCFLs that do not readily cause a reduction in the surface brightness of backlight units.

    摘要翻译： 冷阴极荧光灯包括掺杂有5.1-9.0重量％的紫外线吸收剂的硼硅酸盐玻璃的发光管，其内表面上具有荧光体的发光管，以及包围在其中的稀有气体 。 结果，除了254nm紫外光之外，313nm的UV光被充分地阻挡，从而能够提供不容易导致背光单元的表面亮度降低的成本有效的CCFL。

    Semiconductor device and method of manufacturing the same
    13.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08791521B2

    公开(公告)日：2014-07-29

    申请号：US13423664

    申请日：2012-03-19

    申请人： Koji Nakahara ,  Kazuhiro Matsuo ,  Masayuki Tanaka ,  Hirofumi Iikawa

    发明人： Koji Nakahara ,  Kazuhiro Matsuo ,  Masayuki Tanaka ,  Hirofumi Iikawa

    IPC分类号： H01L29/788

    CPC分类号： H01L27/11521 ,  H01L29/42324 ,  H01L29/7881

    摘要： A semiconductor device includes an interelectrode insulating film formed between a charge storage layer and a control electrode layer. The interelectrode insulating film is formed in a first region above an upper surface of an element isolation insulating film, a second region along a sidewall of the charge storage layer, and a third region above an upper surface of the charge storage layer. The interelectrode insulating film includes a first stack including a first silicon nitride film or a high dielectric constant film interposed between a first and a second silicon oxide film or a second stack including a second high dielectric constant film and a third silicon oxide film, and a second silicon nitride film formed between the control electrode layer and the first or the second stack. The second silicon nitride film is relatively thinner in the third region than in the first region.

    摘要翻译： 半导体器件包括在电荷存储层和控制电极层之间形成的电极间绝缘膜。 电极间绝缘膜形成在元件隔离绝缘膜的上表面上方的第一区域，沿着电荷存储层的侧壁的第二区域和电荷存储层的上表面上方的第三区域。 电极间绝缘膜包括：第一堆叠，其包括介于第一和第二氧化硅膜之间的第一氮化硅膜或高介电常数膜，或包括第二高介电常数膜和第三氧化硅膜的第二堆叠， 形成在控制电极层和第一或第二堆叠之间的第二氮化硅膜。 在第三区域中，第二氮化硅膜比第一区域相对薄。

    ELECTRONIC DEVICE
    16.
    发明申请
    ELECTRONIC DEVICE 有权
    电子设备

    公开(公告)号：US20110170270A1

    公开(公告)日：2011-07-14

    申请号：US13005332

    申请日：2011-01-12

    申请人： MASAAKI Inoue ,  Takashi Matsumoto ,  Kazuhiro Matsuo ,  Junji Baba ,  Manabu Sawa ,  Kazuo Sugai

    发明人： MASAAKI Inoue ,  Takashi Matsumoto ,  Kazuhiro Matsuo ,  Junji Baba ,  Manabu Sawa ,  Kazuo Sugai

    IPC分类号： H05K5/00

    CPC分类号： H05K7/1445

    摘要： The present invention relates to an electronic device including plural circuit board units that can be removed from the electronic device. The electronic device is designed to increase a data transfer rate between the circuit board units by using a circuit board for interconnect for electrically coupling the circuit board units placed in the electronic device, and using a cable for electrically or optically coupling the circuit board units placed in the electric device, or both of the cables.

    摘要翻译： 电子设备技术领域本发明涉及一种电子设备，包括可以从电子设备移除的多个电路板单元。 该电子设备被设计成通过使用用于互连的电路板来电连接放置在电子设备中的电路板单元，并且使用用于将放置的电路板单元电气或光学耦合的电缆来增加电路板单元之间的数据传输速率 在电气设备中，或两个电缆。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    17.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20100308393A1

    公开(公告)日：2010-12-09

    申请号：US12722111

    申请日：2010-03-11

    申请人： Kazuhiro Matsuo ,  Masayuki Tanaka

    发明人： Kazuhiro Matsuo ,  Masayuki Tanaka

    IPC分类号： H01L29/788 ,  H01L21/336

    CPC分类号： H01L29/42336 ,  H01L27/11521 ,  H01L29/40114

    摘要： A semiconductor device including a semiconductor substrate having an active region isolated by an element isolation insulating film; a floating gate electrode film formed on a gate insulating film residing on the active region; an interelectrode insulating film formed above an upper surface of the element isolation insulating film and an upper surface and sidewalls of the floating gate electrode film, the interelectrode insulating film being configured by multiple film layers including a high dielectric film having a dielectric constant equal to or greater than a silicon nitride film; a control gate electrode film formed on the interelectrode insulating film; and a silicon oxide film formed between the upper surface of the floating gate electrode film and the interelectrode insulating film; wherein the high dielectric film of the interelectrode insulating film is placed in direct contact with the sidewalls of the floating gate electrode film.

    摘要翻译： 一种半导体器件，包括具有通过元件隔离绝缘膜隔离的有源区的半导体衬底; 形成在位于有源区上的栅极绝缘膜上的浮栅电极膜; 在所述元件隔离绝缘膜的上表面上方形成的电极间绝缘膜，以及所述浮栅电极膜的上表面和侧壁，所述电极间绝缘膜由多层膜构成，所述多个膜层包括介电常数等于或等于 大于氮化硅膜; 形成在电极间绝缘膜上的控制栅极电极膜; 以及在所述浮栅电极膜的上表面和所述电极间绝缘膜之间形成的氧化硅膜; 其中，电极间绝缘膜的高电介质膜与浮栅电极膜的侧壁直接接触。

    Nonvolatile semiconductor memory device and method of fabricating the same
    18.
    发明授权
    Nonvolatile semiconductor memory device and method of fabricating the same 失效
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US07812391B2

    公开(公告)日：2010-10-12

    申请号：US12354200

    申请日：2009-01-15

    申请人： Kazuhiro Matsuo ,  Masayuki Tanaka ,  Atsuhiro Suzuki

    发明人： Kazuhiro Matsuo ,  Masayuki Tanaka ,  Atsuhiro Suzuki

    IPC分类号： H01L21/76

    CPC分类号： H01L29/42336 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/94

    摘要： A nonvolatile semiconductor memory device includes a semiconductor substrate having a plurality of active regions separately formed by a plurality of trenches formed in a surface of the substrate at predetermined intervals, a first gate insulating film formed on an upper surface of the substrate corresponding to each active region, a gate electrode of a memory cell transistor formed by depositing an electrical charge storage layer formed on an upper surface of the gate insulating film, a second gate insulating film and a control gate insulating film sequentially, an element isolation insulating film buried in each trench and formed from a coating type oxide film, and an insulating film formed inside each trench on a boundary between the semiconductor substrate and the element isolation insulating film, the insulating film containing nontransition metal atoms and having a film thickness not more than 5 Å.

    摘要翻译： 非易失性半导体存储器件包括：半导体衬底，具有由以形成在衬底的表面中的预定间隔分开形成的多个沟槽分开形成的多个有源区;形成在衬底的上表面上的第一栅极绝缘膜， 区域，通过依次沉积形成在栅极绝缘膜的上表面上的电荷存储层，第二栅极绝缘膜和控制栅极绝缘膜而形成的存储单元晶体管的栅电极，每个区域中埋设的元件隔离绝缘膜 沟槽，并且由涂覆型氧化物膜形成，并且在半导体衬底和元件隔离绝缘膜之间的边界上形成在每个沟槽内的绝缘膜，所述绝缘膜包含非转移金属原子并且具有不大于5的膜厚度。

    Recombinant BCG vaccine
    19.
    发明授权
    Recombinant BCG vaccine 失效
    重组BCG疫苗

    公开(公告)号：US07638133B2

    公开(公告)日：2009-12-29

    申请号：US10524586

    申请日：2003-08-13

    申请人： Mitsuo Honda ,  Kazuhiro Matsuo ,  Masaru Kanekiyo ,  Duanthanorm Promkhatkaew

    发明人： Mitsuo Honda ,  Kazuhiro Matsuo ,  Masaru Kanekiyo ,  Duanthanorm Promkhatkaew

    IPC分类号： A61K39/02 ,  A61K39/04

    CPC分类号： C07K14/005 ,  A61K39/04 ,  A61K2039/523 ,  C07K16/1054 ,  C12N15/67 ,  C12N2740/16222

    摘要： A recombinant BCG vaccine being transformed with an expression vector that has a polynucleotide encoding a foreign antigenic protein, wherein the polynucleotide is a modified one in which the third position of each codon is substituted with G or C without a change of an amino acid. This recombinant BCG vaccine has an excellent expression rate of antigenic protein and, as a result, capable of inducing a sufficient immune response against target infectious disease, cancer, or the like at the same dose as that of the typical BCG vaccine.

    摘要翻译： 用编码外源抗原蛋白的多核苷酸的表达载体转化的重组BCG疫苗，其中所述多核苷酸是其中每个密码子的第三位被G或C替代而不改变氨基酸的修饰的。 该重组BCG疫苗具有优异的抗原性蛋白的表达率，因此能够以与典型的BCG疫苗相同的剂量诱导针对目标感染性疾病，癌症等的足够的免疫应答。

    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    20.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US20090152618A1

    公开(公告)日：2009-06-18

    申请号：US12333983

    申请日：2008-12-12

    申请人： Kazuhiro Matsuo ,  Masayuki Tanaka ,  Takeo Furuhata ,  Koji Nakahara

    发明人： Kazuhiro Matsuo ,  Masayuki Tanaka ,  Takeo Furuhata ,  Koji Nakahara

    IPC分类号： H01L29/792 ,  H01L21/28

    CPC分类号： H01L29/792 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/513 ,  H01L29/7881

    摘要： A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer, a control electrode formed on the second insulation layer. The second insulation layer includes a first silicon oxide film, an intermediate insulating film formed on the first silicon oxide film and having a relative permittivity of not less than 7, and a second silicon oxide film formed on the intermediate insulating film. A charge trap layer is formed at least in either first or second silicon oxide film or a boundary between the first silicon oxide film and the intermediate insulating film or a boundary between the second silicon oxide film and the intermediate insulating film.

    摘要翻译： 非易失性半导体存储器件包括半导体衬底，形成在半导体衬底上的第一绝缘层，形成在第一绝缘层上的电荷存储层，形成在电荷存储层上的第二绝缘层，形成在第二绝缘层上的控制电极 层。 第二绝缘层包括第一氧化硅膜，形成在第一氧化硅膜上并具有不小于7的相对介电常数的中间绝缘膜和形成在中间绝缘膜上的第二氧化硅膜。 至少在第一或第二氧化硅膜或第一氧化硅膜和中间绝缘膜之间的边界或第二氧化硅膜和中间绝缘膜之间的边界上形成电荷陷阱层。