摘要:
A high frequency part, which amplifies a high frequency signal outputted from an intermediate frequency part and supplies to an antenna, is equipped with a gain controller with switch function. The gain controller with switch function comprises an attenuator with switch function has a function of switching a selected band between two bands outputted from the intermediate frequency part and controlling the gain of the high frequency signal in the selected band. The attenuator with switch function comprises a first variable resistor which connects a signal input part with a signal output part and a second variable resistor which is disposed parallel to said first variable resistor and connects a signal input part with a signal output part. The first and the second variable resistors are controlled by a common gain control voltage and set such that the gain control voltage ranges, which are for changing the resistor values, will not overlap with each other.
摘要:
A high frequency part, which amplifies a high frequency signal outputted from an intermediate frequency part and supplies to an antenna, is equipped with a gain controller with switch function. The gain controller with switch function comprises an attenuator with switch function has a function of switching a selected band between two bands outputted from the intermediate frequency part and controlling the gain of the high frequency signal in the selected band. The attenuator with switch function comprises a first variable resistor which connects a signal input part with a signal output part and a second variable resistor which is disposed parallel to said first variable resistor and connects a signal input part with a signal output part. The first and the second variable resistors are controlled by a common gain control voltage and set such that the gain control voltage ranges, which are for changing the resistor values, will not overlap with each other.
摘要:
Copper-tungsten alloys used for materials of electrode, electric contacts, package materials for semiconductors, heat sink and their manufacturing methods. The copper-tungsten alloy contains preferably 5 to 30 wt. % of copper, 0.002 to 0.04 wt. % of phosphor, the remaining portion being substantially all tungsten, and it is preferable to contain in these alloys 0.1 to 0.5% of cobalt, nickel or iron or else any combined two out of these three.
摘要:
A piezoelectric device includes: a substrate; a first electrode formed over the substrate; a first piezoelectric element formed over the first electrode; a low density region which is formed at a side of the first piezoelectric element and has density lower than that of the first piezoelectric element; a second piezoelectric element which is formed to cover the first piezoelectric element and the low density region; and a second electrode formed over the second piezoelectric element.
摘要:
A piezoelectric element including: a first electrode, a piezoelectric layer formed above the first electrode to have a longitudinal direction and a transverse direction, and a second electrode formed above the piezoelectric layer, wherein at least a part of a side surface of the piezoelectric layer in the transverse direction is a concavo-convex surface, and a width of the piezoelectric layer in the transverse direction from the second electrode to the first electrode changes with the concavo-convex surface.
摘要:
A piezoelectric element includes: a base substrate; a lower electrode formed above the base substrate; a ferroelectric layer formed above the lower electrode; and an upper electrode formed above the ferroelectric layer, wherein an angle of a corner defined by a side surface of the ferroelectric layer and a top surface of the base substrate is between 45° and 75°.
摘要:
A liquid jet head includes: a substrate; a pressure generation chamber provided in the substrate; an elastic plate provided above the substrate; a capacitor structure section provided above the elastic plate, the capacitor structure section including a lower electrode layer, a piezoelectric layer and an upper electrode layer; a porous layer provided above the capacitor structure section; a seal layer provided on the porous layer; and a void section formed between the capacitor structure section and the porous layer.
摘要:
A method for manufacturing a capacitor includes the steps of: forming a conductive layer above a base substrate; forming a dielectric layer above the conductive layer; forming a lanthanum nickelate layer above the dielectric layer; and patterning at least the dielectric layer by using at least the lanthanum nickelate layer as a mask.
摘要:
A method for manufacturing a ferroelectric capacitor in accordance with the present invention includes: (a) a step of forming a ferroelectric laminated body by successively laminating a lower electrode layer, a ferroelectric layer and an upper electrode layer over a base substrate; (b) a step of patterning at least the upper electrode layer and the ferroelectric layer by dry etching; (c) a step of coating a coating composition including a compound having an element composing the ferroelectric layer at least on a side wall of the ferroelectric layer; and (d) a step of thermally treating the coating composition, to crystallize the coating composition coated on the side wall of the ferroelectric layer.