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11.发明授权公开(公告)号：US08246798B2
公开(公告)日：2012-08-21
申请号：US12667836
申请日：2009-03-02
CPC分类号： C23C14/505 , B82Y10/00 , B82Y25/00 , C23C14/351 , C23C14/352 , G11B5/3163 , G11B5/3906 , G11B5/3909 , H01J37/3402 , H01L43/12
摘要： According to the present invention, it can be switched whether or not to apply a magnetic field to a substrate depending on a material of a film to be formed, and a magnetic layer and a non-magnetic layer can be formed in the same chamber.A sputtering apparatus 100 includes a substrate holder 102 configured to support a substrate W; magnet holders 106 that are disposed around the substrate holder; magnets 104 that are movably loaded on the magnet holders; supporting members 103 that protrude from the substrate holder so as to face the magnets; connecting members 105 that protrude from the magnets to face the substrate holder; a rotation mechanism 121 configured to rotationally move at least one of the substrate holder and the magnet holders; and a connection switching mechanism 122 configured to move, when positions of the supporting members and the connecting members are matched to each other by rotational movement of the rotation mechanism, the substrate holder upward and downward to engage the supporting members and the connecting members with each other or separate the supporting members and the connecting members from each other, and switch whether or not to apply a magnetic field to the substrate W.
摘要翻译： 根据本发明，可以切换是否根据要形成的膜的材料向基板施加磁场，并且可以在同一室中形成磁性层和非磁性层。 溅射装置100包括被配置为支撑基板W的基板保持件102; 设置在基板支架周围的磁体保持器106; 可移动地装载在磁体保持器上的磁体104; 支撑构件103，其从基板保持件突出以面对磁体; 连接构件105，其从所述磁体突出以面对所述衬底保持器; 旋转机构121，被配置为旋转地移动所述基板保持件和所述磁体保持器中的至少一个; 以及连接切换机构122，其被配置为当所述支撑部件和所述连接部件的位置通过所述旋转机构的旋转运动彼此匹配时移动，所述基板保持件向上和向下移动以使所述支撑部件和所述连接部件与每个 将支撑构件和连接构件彼此分离或分离，并且切换是否向基板W施加磁场。
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12.发明申请公开(公告)号：US20120193071A1
公开(公告)日：2012-08-02
申请号：US13307673
申请日：2011-11-30
IPC分类号： H01L21/477 , F27D11/12 , F25B29/00
CPC分类号： H01L21/6719 , H01L21/67109 , H01L21/67115 , H01L43/12
摘要： The present invention provides a vacuum heating/cooling apparatus capable of rapidly heating and also rapidly cooling only a substrate while a high vacuum degree is maintained after film-formation processing. The vacuum heating/cooling apparatus according to an embodiment of the present invention includes a vacuum chamber (1), a halogen lamp (2) which emits heating light, a quartz window (3) for allowing the heating light to enter the vacuum chamber (1), a substrate supporting base (9) having a cooling function, and a lift pin (13) which causes the substrate (5) to stand still at a heating position P3 and a cooling position P1 and moves the substrate (5) between the heating position P3 and the cooling position P1.
摘要翻译： 本发明提供了一种真空加热/冷却装置，其能够在成膜处理之后保持高真空度的同时快速加热并且仅快速冷却基板。 根据本发明实施例的真空加热/冷却装置包括真空室（1），发出加热灯的卤素灯（2），用于使加热光进入真空室的石英窗（3） 1），具有冷却功能的基板支撑基座（9）和提升销（13），其使基板（5）静止在加热位置P3和冷却位置P1，并使基板（5）在 加热位置P3和冷却位置P1。
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公开(公告)号：US08139325B2
公开(公告)日：2012-03-20
申请号：US12376551
申请日：2008-06-06
申请人： Koji Tsunekawa , Yoshinori Nagamine
发明人： Koji Tsunekawa , Yoshinori Nagamine
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3909 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L27/228
摘要： A tunnel magnetoresistive thin film has a high MR ratio and improves heat resistance while maintaining a thin film of a Ru layer used as a non-magnetic layer so that the Ru layer expresses a preferable exchange coupling magnetic field even through annealing is performed at a high temperature. In the tunnel magnetoresistive thin film, at least one of a first pinned magnetic layer and a second pinned magnetic layer that are layered having the non-magnetic layer for exchange coupling therebetween has a layered structure of two or more layers made of magnetic materials different from each other.
摘要翻译： 隧道磁阻薄膜具有高MR比并且改善耐热性，同时保持用作非磁性层的Ru层的薄膜，使得Ru层表现出优选的交换耦合磁场，即使通过退火执行高 温度。 在隧道磁阻薄膜中，具有用于交换耦合的非磁性层的层叠的第一被钉扎磁性层和第二被钉扎磁性层中的至少一个具有两层或多层由不同于 彼此。
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14.发明申请公开(公告)号：US20100033878A1
公开(公告)日：2010-02-11
申请号：US12376551
申请日：2008-06-06
申请人： Koji Tsunekawa , Yoshinori Nagamine
发明人： Koji Tsunekawa , Yoshinori Nagamine
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3909 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L27/228
摘要： The present invention provides a tunnel magnetoresistive thin film having a high MR ratio by improving heat resistance while maintaining a thin film of a Ru layer used as a non-magnetic layer so that the Ru layer expresses preferable exchange coupling magnetic field even through annealing at high temperature.In the tunnel magnetoresistive thin film, at least one of a first pinned magnetic layer and a second pinned magnetic layer that are layered having the non-magnetic layer for exchange coupling therebetween has a layered structure of two or more layers made of magnetic materials different from each other.
摘要翻译： 本发明通过提高耐热性而提供具有高MR比的隧道磁阻薄膜，同时保持用作非磁性层的Ru层的薄膜，使得即使通过高温退火也能表现出优选的交换耦合磁场 温度。 在隧道磁阻薄膜中，具有用于交换耦合的非磁性层的层叠的第一被钉扎磁性层和第二被钉扎磁性层中的至少一个具有两层或多层由不同于 彼此。
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15.发明申请公开(公告)号：US20110303527A1
公开(公告)日：2011-12-15
申请号：US12667836
申请日：2009-03-02
IPC分类号： C23C14/35
CPC分类号： C23C14/505 , B82Y10/00 , B82Y25/00 , C23C14/351 , C23C14/352 , G11B5/3163 , G11B5/3906 , G11B5/3909 , H01J37/3402 , H01L43/12
摘要： According to the present invention, it can be switched whether or not to apply a magnetic field to a substrate depending on a material of a film to be formed, and a magnetic layer and a non-magnetic layer can be formed in the same chamber.A sputtering apparatus 100 includes a substrate holder 102 configured to support a substrate W; magnet holders 106 that are disposed around the substrate holder; magnets 104 that are movably loaded on the magnet holders; supporting members 103 that protrude from the substrate holder so as to face the magnets; connecting members 105 that protrude from the magnets to face the substrate holder; a rotation mechanism 121 configured to rotationally move at least one of the substrate holder and the magnet holders; and a connection switching mechanism 122 configured to move, when positions of the supporting members and the connecting members are matched to each other by rotational movement of the rotation mechanism, the substrate holder upward and downward to engage the supporting members and the connecting members with each other or separate the supporting members and the connecting members from each other, and switch whether or not to apply a magnetic field to the substrate W.
摘要翻译： 根据本发明，可以切换是否根据要形成的膜的材料向基板施加磁场，并且可以在同一室中形成磁性层和非磁性层。 溅射装置100包括被配置为支撑基板W的基板保持件102; 设置在基板支架周围的磁体保持器106; 可移动地装载在磁体保持器上的磁体104; 支撑构件103，其从基板保持件突出以面对磁体; 连接构件105，其从所述磁体突出以面对所述衬底保持器; 旋转机构121，被配置为旋转地移动所述基板保持件和所述磁体保持器中的至少一个; 以及连接切换机构122，其被配置为当所述支撑部件和所述连接部件的位置通过所述旋转机构的旋转运动彼此匹配时移动，所述基板保持件向上和向下移动以使所述支撑部件和所述连接部件与每个 将支撑构件和连接构件彼此分离或分离，并且切换是否向基板W施加磁场。
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16.发明申请公开(公告)号：US20110262634A1
公开(公告)日：2011-10-27
申请号：US13177237
申请日：2011-07-06
CPC分类号： H01L43/08 , C23C14/081 , C23C14/16 , C23C14/568 , H01J37/32458 , H01J37/32633 , H01J37/34 , H01J37/3429 , H01J37/3447 , H01L43/12
摘要： A magnetoresistive device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistive device.
摘要翻译： 磁阻器件具有设置在第一铁磁层和第二铁磁层之间的MgO（氧化镁）层。 该器件通过在成膜室中形成MgO层的膜来制造。 对于氧化气体的吸气剂效果大的物质粘附到设置在用于形成MgO层的室中的部件的表面上。 具有较大吸气效果的物质是其氧气吸附能值为145kcal / mol以上的物质。 特别地，Ta（钽）作为构成磁阻器件的物质是优选的。
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公开(公告)号：US20100213047A1
公开(公告)日：2010-08-26
申请号：US12727316
申请日：2010-03-19
IPC分类号： C23C14/34
CPC分类号： C23C14/50 , C23C14/081 , C23C14/225 , C23C14/345 , C23C14/3464 , C23C14/352 , C23C16/4586 , H01J37/3417 , H01J37/3438 , H01J37/3444 , H01L43/12
摘要： Provided is a high-quality magnetoresistive thin film by using a method of controlling self bias of a high-frequency sputtering device. In order to control the self bias for the substrate by adjusting a substrate potential, the high-frequency sputtering device according to the present invention includes: a chamber; evacuation means for evacuating the inside of the chamber; gas introduction means for supplying a gas into the chamber; a substrate holder provided with a substrate mounting table; rotation drive means capable of rotating the substrate holder; a sputtering cathode provided with a target mounting table and arranged such that the surface of the target mounting table is non-parallel to the surface of the substrate mounting table; an electrode disposed inside the substrate holder; and a variable impedance mechanism electrically connected to the electrode, for adjusting the substrate potential on the substrate holder.
摘要翻译： 通过使用控制高频溅射装置的自偏压的方法，提供了高质量的磁阻薄膜。 为了通过调整衬底电位来控制衬底的自偏压，根据本发明的高频溅射器件包括：腔室; 用于抽空腔室内部的排气装置; 气体引入装置，用于将气体供应到所述腔室中; 衬底保持器，其设置有衬底安装台; 旋转驱动装置，能够使基板保持架旋转; 设置有目标安装台的溅射阴极，并且被配置为使得所述目标安装台的表面不平行于所述基板安装台的表面; 设置在所述衬底保持器内的电极; 以及电连接到电极的可变阻抗机构，用于调节衬底保持器上的衬底电位。
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18.发明申请TUNNEL MAGNETORESISTIVE THIN FILM AND MAGNETIC MULTILAYER FILM FORMATION APPARATUS 审中-公开隧道磁阻薄膜和磁性多层膜成膜装置公开(公告)号：US20100178528A1
公开(公告)日：2010-07-15
申请号：US12602831
申请日：2008-06-06
申请人： Koji Tsunekawa , Yoshinori Nagamine
发明人： Koji Tsunekawa , Yoshinori Nagamine
IPC分类号： G11B5/39
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/161 , H01F10/16 , H01F10/3254 , H01F10/3295 , H01F41/302 , H01L27/228 , H01L43/08 , Y10T428/1114 , Y10T428/1121
摘要： A tunnel magnetoresistive thin film which can simultaneously realize a high MR ratio and low magnetostriction is provided.The tunnel magnetoresistive thin film comprises a magnetization fixed layer, a tunnel barrier layer, and a magnetization free layer, wherein the tunnel barrier layer is a magnesium oxide film containing magnesium oxide crystal grains and the magnetization free layer is a layered structure including a first magnetization free layer and a second magnetization free layer, the first magnetization free layer being made of alloy containing Co atoms, Fe atoms, and B atoms or containing Co atoms, Ni atoms, Fe atoms, and B atoms, having a body-centered cubic structure, and having (001) orientation, the second magnetization free layer being made of alloy containing Fe atoms and Ni atoms and having a face-centered cubic structure.
摘要翻译： 提供了可以同时实现高MR比和低磁致伸缩的隧道磁阻薄膜。 隧道磁阻薄膜包括磁化固定层，隧道势垒层和无磁化层，其中隧道势垒层是含有氧化镁晶粒的氧化镁膜，并且磁化自由层是包括第一磁化的层状结构 自由层和第二磁化自由层，第一磁化自由层由含有Co原子，Fe原子和B原子或含有Co原子，Ni原子，Fe原子和B原子的合金制成，具有体心立方结构 并且具有（001）取向，第二磁化自由层由含有Fe原子和Ni原子并具有面心立方结构的合金制成。
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19.发明申请公开(公告)号：US20090148595A1
公开(公告)日：2009-06-11
申请号：US12224646
申请日：2007-02-26
IPC分类号： B05D5/12
CPC分类号： H01L43/08 , C23C14/081 , C23C14/16 , C23C14/568 , H01J37/32458 , H01J37/32633 , H01J37/34 , H01J37/3429 , H01J37/3447 , H01L43/12
摘要： A method of manufacturing a magnetoresistance effect element having a high MR ratio even with a low RA and an apparatus of the same are provided. The magnetoresistance effect element having an MgO (magnesium oxide) layer provided between a ferromagnetic layer and a second ferromagnetic layer is manufactured by forming a film of the MgO layer in a film forming chamber in which a substance whose getter effect with respect to the oxidizing gas such as oxygen or water is large is adhered to the surfaces of components (an inner wall 37 of a film forming chamber in the interior of a first film forming chamber 21, inner walls of an adhesion preventing shield 36, a partitioning plate 22, a shutter or the like) provided in the chamber for forming the MgO layer. The substance having a large getter effect must simply be a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher and, in particular, Ta (tantalum) as a substance which constitutes the magnetoresistance effect element is preferable.
摘要翻译： 提供一种制造即使具有低RA的MR比高的磁阻效应元件及其装置的方法。 具有设置在铁磁层和第二铁磁层之间的具有MgO（氧化镁）层的磁电阻效应元件通过在成膜室中形成MgO层的膜来制造，其中，相对于氧化气体的吸气剂效应 例如氧或水大的部件（第一成膜室21的内部的成膜室的内壁37，防粘附防护罩36的内壁，分隔板22， 闸门等），其设置在用于形成MgO层的室中。 具有大的吸气剂效果的物质必须简单地是氧气吸附能的值为145kcal / mol以上的物质，特别是作为构成磁阻效应元素的物质的Ta（钽）是优选的物质。
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公开(公告)号：US07813088B2
公开(公告)日：2010-10-12
申请号：US11527532
申请日：2006-09-27
IPC分类号： G11B5/127
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906 , G11C11/161
摘要： A magnetoresistance effect device has a fixed ferromagnetism layer, a free ferromagnetism layer, and a barrier layer sandwiched by these ferromagnetic layers. It is constituted so that CoFeB whose amount of addition of boron B (b: atomic %) is 21%≦b≦23% may be used for the free ferromagnetism layer. In the magnetic resistance effect element, a magnetostrictive constant does not change steeply near the magnetostrictive constant zero. A MR ratio is maintained to be high.
摘要翻译： 磁阻效应器件具有固定的铁磁层，自由铁磁层和被这些铁磁层夹在中间的阻挡层。 其构成为使得硼B（b：原子％）的添加量为21％＆lt; 1E; b＆nlE; 23％的CoFeB可用于游离铁磁层。 在磁阻效应元件中，磁致伸缩常数在磁致伸缩常数零点附近不会急剧变化。 MR比保持较高。
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