公开(公告)号：US20140326319A1

公开(公告)日：2014-11-06

申请号：US13943088

申请日：2013-07-16

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Won Mok KIM ,  Jin-soo KIM ,  Jeung-hyun JEONG ,  Jong-Keuk PARK ,  Young Joon BAIK

IPC: H01L31/0224

CPC classification number: H01L31/022483 ,  H01L31/022466

Abstract: The present disclosure relates to a Se or S based thin film solar cell and a method for fabricating the same, which may improve the structural and electrical characteristics of an upper transparent electrode layer by controlling a structure of a lower transparent electrode layer in a thin film solar cell having a Se or S based light absorption layer. In the Se or S based thin film solar cell having a light absorption layer and a front transparent electrode layer, the front transparent electrode layer comprises a lower transparent electrode layer and an upper transparent electrode layer, and the lower transparent electrode layer comprises an oxide-based thin film obtained by blending an impurity element into a mixed oxide in which Zn oxide and Mg oxide are mixed (also, referred to as an ‘impurity-doped Zn—Mg-based oxide thin film’).

Abstract translation: 本发明涉及一种基于Se或S的薄膜太阳能电池及其制造方法，其可以通过控制薄膜中的下部透明电极层的结构来改善上部透明电极层的结构和电学特性 具有Se或S的光吸收层的太阳能电池。 在具有光吸收层和前透明电极层的Se或S基薄膜太阳能电池中，前透明电极层包括下透明电极层和上透明电极层，下透明电极层包括氧化物 - 通过将杂质元素混合到其中混合有Zn氧化物和Mg氧化物的混合氧化物（也称为“杂质掺杂的Zn-Mg基氧化物薄膜”）中获得的基于薄膜的薄膜。

公开(公告)号：US20180108795A1

公开(公告)日：2018-04-19

申请号：US15705342

申请日：2017-09-15

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jeung-Hyun JEONG ,  Jong-Keuk PARK ,  Won Mok KIM ,  Seung Hee HAN ,  Doh Kwon LEE

IPC: H01L31/0463 ,  H01L31/032 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/0463 ,  H01L31/022425 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/0326 ,  H01L31/03923 ,  H01L31/0468 ,  H01L31/1888 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided are a thin-film solar cell module structure and a method of manufacturing the same.

公开(公告)号：US20130327387A1

公开(公告)日：2013-12-12

申请号：US13729275

申请日：2012-12-28

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Won Mok KIM ,  Jin Soo KIM ,  Jeung Hyun JEONG ,  Young Joon BAIK ,  Jong Keuk PARK

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022483 ,  H01L31/1884 ,  Y02E10/50

Abstract: The present disclosure relates to a Se or S based thin film solar cell and a method for fabricating the same, which may improve crystallinity and electric characteristics of an upper transparent electrode layer (6) by controlling a structure of a lower transparent electrode layer (5′) in a thin film solar cell having a Se or S based light absorption layer. In the Se or S based thin film solar cell according to the present disclosure, the front transparent electrode layer comprises a lower transparent electrode layer (5′) and an upper transparent electrode layer (6), and the lower transparent electrode layer (5′) comprises an amorphous oxide-based thin film.

Abstract translation: 本发明涉及一种基于Se或S的薄膜太阳能电池及其制造方法，其可以通过控制下部透明电极层（5）的结构来改善上部透明电极层（6）的结晶度和电特性 '）在具有Se或S基光吸收层的薄膜太阳能电池中。 在根据本公开的Se或S基薄膜太阳能电池中，前透明电极层包括下透明电极层（5'）和上透明电极层（6），下透明电极层（5' ）包括无定形氧化物基薄膜。

公开(公告)号：US20130168789A1

公开(公告)日：2013-07-04

申请号：US13723555

申请日：2012-12-21

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Taek Sung LEE ,  Kyeong Seok LEE ,  In Ho KIM ,  Wook Seong LEE ,  Doo Seok JEONG ,  Won Mok KIM ,  Byung Ki CHEONG

IPC: H01L31/032 ,  H01L31/18

CPC classification number: H01L31/186 ,  B82Y15/00 ,  G01N21/554 ,  G01N33/54373 ,  G02B5/008 ,  H01L31/0324 ,  H01L31/18

Abstract: A localized surface plasmon resonance sensor may include a localized surface plasmon excitation layer including a chalcogenide material. The chalcogenide material may include: a first material including at least one of selenium (Se) and tellurium (Te); and a second material including at least one of germanium (Ge) and antimony (Sb). The localized surface plasmon excitation layer may be prepared by forming a thin film including the chalcogenide material and crystallizing the thin film to have a predetermined pattern by irradiating laser on the thin film.

Abstract translation: 局部表面等离子体共振传感器可以包括含有硫族化物材料的局部表面等离子体激元层。 硫族化物材料可以包括：包含硒（Se）和碲（Te）中的至少一种的第一材料; 和包含锗（Ge）和锑（Sb）中的至少一种的第二材料。 局部表面等离子体激发层可以通过形成包括硫属化物材料的薄膜并通过在薄膜上照射激光来使薄膜结晶以具有预定图案来制备。