Abstract:
Provision and use of sets of isolators to enable the caching of the contents of at least one row of memory cells within a subarray of a bank of a memory device by a row of sense amplifiers associated with the subarray to enable faster access to write the data directed to at least one row through a write operation causing the data to written to the row of sense amplifiers versus from the row of memory cells, directly, and to store an indication that the data cached by the row of sense amplifiers is dirty.
Abstract:
Method and apparatus for use with buffered memory modules are included among the embodiments. In exemplary systems, the memory module has a buffer that receives memory commands and data, and then presents those commands and data to physical memory devices through a separate interface. The buffer has the capability to accept an implicit memory command, i.e., a command that does not contain a fully-formed memory device command, but instead instructs the memory module buffer to form one or more fully-formed memory device commands to perform memory operations. Substantial memory channel bandwidth can be saved, for instance, with a command that instructs a memory module to clear a region of memory or copy a region to a second area in memory. Other embodiments are described and claimed.
Abstract:
In some embodiments, data may be transferred from a first memory agent to a second memory agent in a first format having a first width, and at least a critical portion of the data maybe transferred from the second memory agent back to the first memory agent in a second format having a second width, where the critical portion is included in a first frame. The critical portion may include a cacheline mapped over a memory device rank. Other embodiments are described and claimed.
Abstract:
In some embodiments, a chip includes memory banks and data ports, including at least first and second data ports, coupled to the memory banks. The chip also includes control circuitry to control a configuration of the first data port to be in one of multiple configurations in response to a configuration command, wherein the available configurations for the first data port include at least two of the following: whether the first data port (1) may only be used for read transactions, (2) may only be used for write transactions, or (3) may be used for either read or write transactions while in the configuration. Other embodiments are described.
Abstract:
Some embodiments of the invention enable debugging functionality for memory devices residing on a memory module that are buffered from the memory bus by a buffer chip. Some embodiments map connector signals from a tester coupled to the high speed interface between the buffer chip and the memory bus to an interface between the buffer chip and the memory devices. During test mode, some embodiments bypass the normal operational circuitry of the buffer chip and provide a direct connection to the memory devices. Other embodiments use the existing architecture of the buffer chip to convert high speed pins into low speed pins and map them to pins that are connected to the memory devices. Other embodiments are described in the claims.
Abstract:
Dynamic operations for operations for a stacked memory with interface providing offset interconnects. An embodiment of memory device includes a system element and a memory stack coupled with the system element, the memory stack including one or more memory die layers. Each memory die layer includes first face and a second face, the second face of each memory die layer including an interface for coupling data interface pins of the memory die layer with data interface pins of a first face of a coupled element. The interface of each memory die layer includes connections that provide an offset between each of the data interface pins of the memory die layer and a corresponding data interface pin of the data interface pins of the coupled element.
Abstract:
In some embodiments, a chip includes at least four groups of memory banks and at least four groups of output conductors wherein each group of output conductors corresponds to a different one of the groups of memory banks. The chip also includes circuitry to perform a read operation by providing read data from at least one of the banks of each of the groups of memory banks to its corresponding group of output conductors. Other embodiments are described.
Abstract:
A method, apparatus, and system to enable a partial refresh scheme for DRAM which includes specifying at least a refresh start value, or a refresh start value and a refresh end value, to reduce the number of rows that must be refreshed during a refresh cycle, thus reducing the amount of power consumed during refresh.
Abstract:
The temperature for multiple devices of a memory module are determined. In one example a memory module includes a printed circuit board, a plurality of memory chips on the printed circuit board, each chip containing a plurality of memory cells and a thermal sensor, and a multiplexer on the printed circuit board, independent of the memory chips, coupled to each of the thermal sensors. A current source is coupled to the multiplexer to provide a current to each one of the thermal sensors, and a voltage detector is coupled to the multiplexer to detect a voltage from each of the thermal sensors when a current is applied. A temperature circuit is coupled to the voltage detector to determine a temperature for each memory chip based on the detected voltage.
Abstract:
The present invention provides a system and method for providing reliable transmission in a buffered memory system. The system includes memory devices, a memory controller, data buffers, an address/command buffer, and a clock circuit. The memory controller sends data, address information, status information and command information, to the memory devices and receives data from the memory devices. The buffers interconnect the memory devices and the memory controller. The clock circuit is embedded in the addr/cmd buffer. The clock circuit takes an input clock and outputs an output clock to the data buffers and/or the memory devices to control clock-skew to the data buffers and/or the memory devices.