摘要:
An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.
摘要:
An advanced memory having improved performance, reduced power and increased reliability. A memory device includes a memory array, a receiver for receiving a command and associated data, error control coding circuitry for performing error control checking on the received command, and data masking circuitry for preventing the associated data from being written to the memory array in response to the error control coding circuitry detecting an error in the received command. Another memory device includes a programmable preamble. Another memory device includes a fast exit self-refresh mode. Another memory device includes auto refresh function that is controlled by the characteristic device. Another memory device includes an auto refresh function that is controlled by a characteristic of the memory device.
摘要:
A memory system, memory interface device and method for a non-power-of-two burst length are provided. The memory system includes a plurality of memory devices with non-power-of-two burst length logic and a memory interface device including non-power-of-two burst length generation logic. The non-power-of-two burst length generation logic extends a burst length from a power-of-two value to insert an error-detecting code in a burst on data lines between the memory interface device and the plurality of memory devices.
摘要:
A system for providing on-die termination (ODT) of a control signal bus. The system includes a memory device that includes a plurality of data bus connectors, one or both of a load signal connector and a reset signal connector, a control bus connector, an ODT, and a mechanism. The ODT is in communication with the control bus connector, and the ODT provides a level of termination resistance to a control bus connected to the control bus connector. The mechanism latches data received via the data bus connectors in response to a signal received via one or both of the load signal connector and the reset signal connector. The data is utilized to set the level of termination resistance provided by the ODT.
摘要:
A memory system having a memory element chip (DRAM) and a memory controller chips having a plurality of drivers and receivers and latches for transferred data. For writes clocks, write data and write for CRC (cyclic redundancy checks) is transferred to the DRAM from the memory controller and latched for error checking. The reads are clocked and the read data is received and transferred to a read data latch with also receives a clocked read strobe for verification of data integrity from DRAM. Each chip has a bi-functional pin that acts as a shared CRC pin during write and acts as a shared strobe pin during READ. Data transfers with the CRC signal and DQS signal are transferred across two paths CRC0/DQS and CRC1/DQS1. One could also transfer the CRC signal across one path with only the CRC0/DQS signal. Read operations have no CRC, and have no need for CRC because transfer errors during read can be detected by memory error correction coding (ECC). Write data provides source synchronous I/O data to said memory element chip needed for modem high speed memory communications.
摘要:
A system for providing on-die termination (ODT) of a control signal bus. The system includes a memory device that includes a plurality of data bus connectors, one or both of a load signal connector and a reset signal connector, a control bus connector, an ODT, and a mechanism. The ODT is in communication with the control bus connector, and the ODT provides a level of termination resistance to a control bus connected to the control bus connector. The mechanism latches data received via the data bus connectors in response to a signal received via one or both of the load signal connector and the reset signal connector. The data is utilized to set the level of termination resistance provided by the ODT.
摘要:
A system for providing open-loop quadrature clock generation. The system is implemented by a ring oscillator structure that includes input inverters for receiving an input clock, forward direction loop inverters, backward direction loop inverters, one or more outputs, and cross-coupled latches connected between any two opposite nodes.
摘要:
A system and method for providing a memory device having a shared error feedback pin. The system includes a memory device having a data interface configured to receive data bits and CRC bits, CRC receiving circuitry, CRC creation circuitry, a memory device pad, and driver circuitry. The CRC receiving circuitry utilizes a CRC equation for the detection of errors in one or more of the received data and the received CRC bits. The CRC creation circuitry utilizes the CRC equation for the creation of CRC bits consistent with data to be transmitted to a separate device bits. The memory device pad is configured for reporting of any errors detected in the received data and the received CRC bits. The driver circuitry is connected to the memory device pad and merged with one or more other driver circuitries resident on one or more other memory devices into an error reporting line.
摘要:
According to one embodiment of the present invention, a method for refreshing memory includes receiving a synchronization command at a memory device. An internal refresh timer is reset within the memory device based on receiving the synchronization command. An internal refresh trigger is generated within the memory device based on the internal refresh timer reaching a predetermined value. A refresh of a memory array is performed within the memory device based on the internal refresh trigger.
摘要:
A method and circuit for implementing die stacking to distribute a logical function over multiple dies, die identification and sparing in through-silicon-via stacked semiconductor devices, and a design structure on which the subject circuit resides are provided. Each die in the die stack includes predefined functional logic for implementing a respective predefined function. The respective predefined function is executed in each respective die and a respective functional result is provided to an adjacent die in the die stack. Each die in the die stack includes logic for providing die identification. An operational die signature is formed by combining a plurality of selected signals on each die. A die signature is coupled to a next level adjacent die using TSV interconnections where it is combined with that die signature.