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    ETCHING ISOLATION FEATURES AND DENSE FEATURES WITHIN A SUBSTRATE
    11.
    发明申请
    ETCHING ISOLATION FEATURES AND DENSE FEATURES WITHIN A SUBSTRATE 有权

    公开(公告)号：US20220319856A1

    公开(公告)日：2022-10-06

    申请号：US17847971

    申请日：2022-06-23

    Applicant: Lam Research Corporation

    Inventor： Juline Shoeb ,  Alexander Miller Paterson ,  Ying Wu

    IPC: H01L21/3065 ,  H01J37/305 ,  H01J37/32

    Abstract: Systems and methods for etching different features in a substantially equal manner are described. One of the methods includes applying a low frequency bias signal during a low TCP state and applying a high frequency bias signal during a high TCP state. The application of the low frequency bias signal during the low TCP state facilitates generation of hot neutrals, which are used to increase an etch rate of etching dense features compared to an etch rate for etching isolation features. The application of the high frequency bias signal during the high TCP state facilitates generation of ions to increase an etch rate of etching the isolation features compared to an etch rate of etching the dense features. After applying the low frequency bias signal during the low TCP state and the high frequency bias signal during the high TCP state, the isolation and dense features are etched similarly.

    SUBSTRATE LOCATION DETECTION AND ADJUSTMENT
    12.
    发明申请
    SUBSTRATE LOCATION DETECTION AND ADJUSTMENT 有权

    公开(公告)号：US20220126454A1

    公开(公告)日：2022-04-28

    申请号：US17427522

    申请日：2020-02-06

    Applicant: Lam Research Corporation

    Inventor： Michael John Martin ,  Yuhou Wang ,  Alexander Miller Paterson

    IPC: B25J9/16 ,  H01L21/68 ,  H01J37/32 ,  B25J11/00 ,  B25J13/08

    Abstract: Systems and methods are provided for positioning a wafer in relation to a datum structure. In one example, a system comprises a camera arrangement including at least two cameras, each of the at least two cameras including a field of view when positioned in the camera arrangement, each field of view including a peripheral edge of the wafer and a peripheral edge of the datum structure. A processor receives positional data from each of the at least two cameras and determines, in relation to each field of view, a gap size between the respective peripheral edges of the wafer and the datum location included in the respective field of view. A controller adjusts a position of the wafer relative to the datum structure based on the determined respective gap sizes.

    Systems for cooling RF heated chamber components
    14.
    发明授权
    Systems for cooling RF heated chamber components 有权

    公开(公告)号：US10825661B2

    公开(公告)日：2020-11-03

    申请号：US15969583

    申请日：2018-05-02

    Applicant: Lam Research Corporation

    Inventor： Jon McChesney ,  Saravanapriyan Sriraman ,  Richard A. Marsh ,  Alexander Miller Paterson ,  John Holland

    IPC: H01J37/32

    Abstract: In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

    Edge ring centering method using ring dynamic alignment data
    15.
    发明授权
    Edge ring centering method using ring dynamic alignment data 有权

    公开(公告)号：US10541168B2

    公开(公告)日：2020-01-21

    申请号：US15799011

    申请日：2017-10-31

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Ali Sucipto Tan ,  Haoquan Yan ,  Marc Estoque ,  Damon Tyrone Genetti ,  Jon McChesney ,  Alexander Miller Paterson

    IPC: H01L21/68 ,  H01L21/687

    Abstract: A system for determining an alignment of an edge ring on a substrate support includes a robot control module configured to control a robot to place the edge ring onto the substrate support and retrieve the edge ring from the substrate support. An alignment module is configured to determine a plurality of first positions of the edge ring on the robot prior to being placed onto the substrate support and determine a plurality of second positions of the edge ring on the robot subsequent to being retrieved from the substrate support. An edge ring position module configured to determine a centered position of the edge ring relative to the substrate support based on offsets between the plurality of first positions and the plurality of second positions.

    A METHOD AND APPARATUS FOR ENHANCING ION ENERGY AND REDUCING ION ENERGY SPREAD IN AN INDUCTIVELY COUPLED PLASMA
    17.
    发明申请
    A METHOD AND APPARATUS FOR ENHANCING ION ENERGY AND REDUCING ION ENERGY SPREAD IN AN INDUCTIVELY COUPLED PLASMA 有权

    公开(公告)号：US20250046572A1

    公开(公告)日：2025-02-06

    申请号：US18693940

    申请日：2022-09-22

    Applicant: Lam Research Corporation

    Inventor： Juline Shoeb ,  Myeong Yeol Choi ,  Alexander Miller Paterson ,  Yuhou Wang

    IPC: H01J37/32

    Abstract: A method for operating a plasma chamber to increase ion energy and decrease angular spread of ions during an etch operation is described. Method includes placing a substrate on an electrostatic chuck within the plasma chamber, wherein the electrostatic chuck is electrically coupled to a node. Method further includes forming a plasma in the plasma chamber, where the plasma produces a sheath with a first sheath voltage. The method further includes increasing the first sheath voltage to a second sheath voltage by applying a non-sinusoidal voltage at the electrostatic chuck and by applying a sinusoidal voltage at the electrostatic chuck, where a sum of the non-sinusoidal voltage and the sinusoidal voltage creates a voltage response on the electrostatic chuck that effectuates a change in a spread in ion energy at the wafer.

    Dual-frequency, direct-drive inductively coupled plasma source
    18.
    发明授权
    Dual-frequency, direct-drive inductively coupled plasma source 有权

    公开(公告)号：US12165841B2

    公开(公告)日：2024-12-10

    申请号：US17606686

    申请日：2020-04-24

    Applicant: Lam Research Corporation

    Inventor： Maolin Long ,  Yuhou Wang ,  Alexander Miller Paterson

    IPC: H01J37/32

    Abstract: A direct drive system for providing RF power to a substrate processing system includes a direct drive enclosure including a first direct drive circuit located in the direct drive enclosure and operating at a first frequency and a first connector connected to the first direct drive circuit. A junction box is arranged adjacent to the direct drive enclosure and includes a first capacitive circuit connected to the first direct drive circuit; a second connector located on one side of the junction box, connected to one terminal of the first capacitive circuit and mating with the first connector of the direct drive enclosure; third and fourth connectors connected to another terminal of the first capacitive circuit; and a coil enclosure arranged adjacent to the junction box and including first and second coils and fifth and sixth connectors mating with the third and fourth connectors of the junction box.

    Symmetric Coupling of Coil to Direct-Drive Radiofrequency Power Supplies
    19.
    发明申请
    Symmetric Coupling of Coil to Direct-Drive Radiofrequency Power Supplies 有权

    公开(公告)号：US20240395503A1

    公开(公告)日：2024-11-28

    申请号：US18689030

    申请日：2022-09-14

    Applicant: Lam Research Corporation

    Inventor： John Drewery ,  Alexander Miller Paterson

    IPC: H01J37/32

    Abstract: A coil is disposed next to a plasma processing chamber. A first direct-drive radiofrequency (RF) power supply has an output through which a first shaped-amplified square waveform signal is transmitted. A first reactive circuit is connected between the output of the first direct-drive RF power supply and a first end of the coil. The first reactive circuit transforms the first shaped-amplified square waveform signal into a first shaped-sinusoidal signal in route to the first end of the coil. A second direct-drive RF power supply has an output through which a second shaped-amplified square waveform signal is transmitted. A second reactive circuit is connected between the output of the second direct-drive RF power supply and a second end of the coil. The second reactive circuit transforms the second shaped-amplified square waveform signal into a second shaped-sinusoidal signal in route to the second end of the coil.

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