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    Self limiting lateral atomic layer etch
    1.
    发明授权
    Self limiting lateral atomic layer etch 有权

    公开(公告)号：US10714354B2

    公开(公告)日：2020-07-14

    申请号：US15447005

    申请日：2017-03-01

    Applicant: Lam Research Corporation

    Inventor： Tom Kamp ,  Neema Rastgar ,  Michael Carl Drymon

    IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/02 ,  H01L21/308 ,  H01L21/311 ,  H01L21/67

    Abstract: Methods of and apparatuses for laterally etching semiconductor substrates using an atomic layer etch process involving exposing an oxidized surface of a semiconductor substrate to a fluorine-containing etch gas and heating the substrate to remove non-volatile etch byproducts by a sublimation mechanism are provided herein. Methods also including additionally pulsing a hydrogen-containing gas when pulsing the fluorine-containing etch gas. Apparatuses also include an ammonia mixing manifold suitable for separately preparing and mixing ammonia for use in various tools.

    SILICON ETCH AND CLEAN
    4.
    发明申请
    SILICON ETCH AND CLEAN 审中-公开
    硅蚀刻和清洁

    公开(公告)号：US20160181111A1

    公开(公告)日：2016-06-23

    申请号：US14576978

    申请日：2014-12-19

    Applicant: Lam Research Corporation

    Inventor： Tom A. Kamp ,  Alexander M. Paterson ,  Neema Rastgar

    IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67

    CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32926 ,  H01J2237/334 ,  H01L21/02057 ,  H01L21/02071 ,  H01L21/32137

    Abstract: A method for etching features into a silicon containing etch layer is provided. The etch layer is placed into a plasma processing chamber. An etch gas is flowed into the plasma processing chamber. The etch gas is formed into an etch plasma, wherein the etch plasma etches features into the silicon containing layer leaving silicon containing residue. The flow of etch gas into the plasma processing chamber is stopped. A dry clean gas is flowed into the plasma processing chamber, wherein the dry clean gas comprises NH3 and NF3. The dry clean gas is formed into a plasma, wherein the silicon containing residue is exposed to the dry clean gas plasma, and wherein at least some or all of the silicon containing residue is formed into ammonium containing compounds. The flow of the dry clean gas is stopped. The ammonium compounds are sublimated from the films.

    Abstract translation: 提供了将特征蚀刻到含硅蚀刻层中的方法。 将蚀刻层放置在等离子体处理室中。 蚀刻气体流入等离子体处理室。 蚀刻气体形成为蚀刻等离子体，其中蚀刻等离子体蚀刻到含硅层中，留下含硅残留物。 停止进入等离子体处理室的蚀刻气体的流动。 干净的气体流入等离子体处理室，其中干净的气体包括NH 3和NF 3。 将干燥的干燥气体形成为等离子体，其中将含硅残渣暴露于干燥清洁气体等离子体中，并且其中至少部分或全部含硅残渣形成含铵化合物。 干燥气体的流动停止。 铵化合物从膜中升华。

    Junction System for Direct-Drive Radiofrequency Power Supply
    7.
    发明申请
    Junction System for Direct-Drive Radiofrequency Power Supply 有权

    公开(公告)号：US20240396372A1

    公开(公告)日：2024-11-28

    申请号：US18689007

    申请日：2022-09-13

    Applicant: Lam Research Corporation

    Inventor： Alexander Miller Paterson ,  Michael John Martin ,  Yuhou Wang ,  John Drewery ,  Neema Rastgar

    IPC: H02J50/10 ,  H01J37/32 ,  H02J50/20

    Abstract: A junction system for a direct-drive radiofrequency power supply includes a first terminal connected to a radiofrequency signal supply pin that is connected to an output of a direct-drive radiofrequency signal generator. The junction system also includes a second terminal connected to a coil of a plasma processing chamber. The junction system includes a reactive circuit connected between the first terminal and the second terminal. The reactive circuit is configured to transform a shaped-amplified square waveform signal into a shaped-sinusoidal signal in route from the first terminal to the second terminal. The reactive circuit includes a variable capacitor having a capacitance set so that a peak amount of radiofrequency power is transmitted from the direct-drive radiofrequency signal generator through the reactive circuit to the coil.

    SELF LIMITING LATERAL ATOMIC LAYER ETCH
    9.
    发明申请
    SELF LIMITING LATERAL ATOMIC LAYER ETCH 有权
    自我限制横向原子层蚀刻

    公开(公告)号：US20170053808A1

    公开(公告)日：2017-02-23

    申请号：US14830661

    申请日：2015-08-19

    Applicant: Lam Research Corporation

    Inventor： Tom Kamp ,  Neema Rastgar ,  Michael Carl Drymon

    IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/308

    CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/67069

    Abstract: Methods of and apparatuses for laterally etching semiconductor substrates using an atomic layer etch process involving exposing an oxidized surface of a semiconductor substrate to a fluorine-containing etch gas and heating the substrate to remove non-volatile etch byproducts by a sublimation mechanism are provided herein. Methods also including additionally pulsing a hydrogen-containing gas when pulsing the fluorine-containing etch gas. Apparatuses also include an ammonia mixing manifold suitable for separately preparing and mixing ammonia for use in various tools.

    Abstract translation: 本文提供了使用包括将半导体衬底的氧化表面暴露于含氟蚀刻气体并加热衬底以通过升华机构去除非挥发性蚀刻副产物的原子层蚀刻工艺横向蚀刻半导体衬底的方法和装置。 方法还包括在脉冲含氟蚀刻气体时额外脉冲含氢气体。 装置还包括适用于分别制备和混合用于各种工具的氨的氨混合歧管。

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