SYSTEMS AND METHODS FOR CALIBRATING SCALAR FIELD CONTRIBUTION VALUES FOR A LIMITED NUMBER OF SENSORS INCLUDING A TEMPERATURE VALUE OF AN ELECTROSTATIC CHUCK AND ESTIMATING TEMPERATURE DISTRIBUTION PROFILES BASED ON CALIBRATED VALUES
    12.
    发明申请
    SYSTEMS AND METHODS FOR CALIBRATING SCALAR FIELD CONTRIBUTION VALUES FOR A LIMITED NUMBER OF SENSORS INCLUDING A TEMPERATURE VALUE OF AN ELECTROSTATIC CHUCK AND ESTIMATING TEMPERATURE DISTRIBUTION PROFILES BASED ON CALIBRATED VALUES 审中-公开
    用于校准包含静电卡的温度值的传感器的数量的标量场贡献值的系统和方法以及基于校准值估算温度分布分布

    公开(公告)号:US20160370795A1

    公开(公告)日:2016-12-22

    申请号:US14860009

    申请日:2015-09-21

    Abstract: A system including a controller, an interface, and a calibration controller. The controller is configured to (i) select a set of fields, and (ii) based on the set of fields, supply control effort to first actuators in zones of a chamber. The interface is configured to receive feedback signals from sensors. The feedback signals are indicative of fields respectively of the zones. The controller is configured to adjust an amount of control effort supplied to the actuators based on the fields. The calibration controller is configured to, based on the fields, generate calibration values for each of the sensors. The calibration values for each of the sensors are indicative of field contributions corresponding respectively to the actuators.

    Abstract translation: 包括控制器,接口和校准控制器的系统。 控制器被配置为(i)选择一组场,以及(ii)基于所述一组场,向室中的区域中的第一致动器供应控制努力。 该接口被配置为接收来自传感器的反馈信号。 反馈信号分别指示区域的场。 控制器被配置为基于场来调整提供给致动器的控制力的量。 校准控制器被配置为基于这些场产生每个传感器的校准值。 每个传感器的校准值表示分别对应于致动器的场贡献。

    Systems and methods for performing edge ring characterization

    公开(公告)号:US11011353B2

    公开(公告)日:2021-05-18

    申请号:US15403786

    申请日:2017-01-11

    Abstract: A substrate support in a substrate processing system includes an inner portion arranged to support a substrate, an edge ring surrounding the inner portion, and a controller. The controller at least one of raises the edge ring to selectively cause the edge ring to engage the substrate and lowers the inner portion to selectively cause the edge ring to engage the substrate. The controller determines when the edge ring engages the substrate and calculates at least one characteristic of the substrate processing system based on the determination of when the edge ring engages the substrate.

    Method of etch model calibration using optical scatterometry

    公开(公告)号:US10997345B2

    公开(公告)日:2021-05-04

    申请号:US16741735

    申请日:2020-01-13

    Abstract: Computer-implemented methods of optimizing a process simulation model that predicts a result of a semiconductor device fabrication operation to process parameter values characterizing the semiconductor device fabrication operation are disclosed. The methods involve generating cost values using a computationally predicted result of the semiconductor device fabrication operation and a metrology result produced, at least in part, by performing the semiconductor device fabrication operation in a reaction chamber operating under a set of fixed process parameter values. The determination of the parameters of the process simulation model may employ pre-process profiles, via optimization of the resultant post-process profiles of the parameters against profile metrology results. Cost values for, e.g., optical scatterometry, scanning electron microscopy and transmission electron microscopy may be used to guide optimization.

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