公开(公告)号：US09546432B2

公开(公告)日：2017-01-17

申请号：US14817742

申请日：2015-08-04

Applicant: LAM RESEARCH CORPORATION

Inventor： Hong Shih ,  Lin Xu ,  John Michael Kerns ,  William Charles ,  John Daugherty ,  Sivakami Ramanathan ,  Russell Ormond ,  Robert G. O'Neill ,  Tom Stevenson

IPC: C25D11/04 ,  C25D11/02 ,  H01L21/3065 ,  H01L21/02 ,  C25D11/16 ,  C25D11/12 ,  C23C28/00 ,  C23C24/00 ,  H01L21/67 ,  C23C16/44 ,  H01L21/78

CPC classification number: C25D11/026 ,  C23C16/4404 ,  C23C24/00 ,  C23C28/322 ,  C23C28/345 ,  C25D11/04 ,  C25D11/12 ,  C25D11/16 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/78 ,  Y10T428/12479 ,  Y10T428/12549 ,  Y10T428/1259

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。

公开(公告)号：US20150184296A1

公开(公告)日：2015-07-02

申请号：US14572087

申请日：2014-12-16

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  Hong Shih ,  Nash Anderson ,  Tom Stevenson ,  John Daugherty ,  John Michael Kerns ,  Robert Griffith O'Neill

IPC: C23C16/455 ,  C23C16/46 ,  H01L21/67 ,  C23C16/52

CPC classification number: C23C14/564 ,  C23C16/045 ,  C23C16/4402 ,  C23C16/4404 ,  C23C16/45525 ,  Y10T29/41 ,  Y10T428/263 ,  Y10T428/31504 ,  Y10T428/31551 ,  Y10T428/31678 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31786

Abstract: A coating system for forming an atomic layer deposition (ALD) or a molecular layer deposition (MLD) barrier coating on interior fluid wetted surfaces of a fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus. The coating system includes the fluid handling component, wherein the interior fluid wetted surfaces define a process region of the coating system, a gas supply system in fluid communication with the process region of the component wherein the gas supply system supplies process gases to the process region of the component through the inlet port thereof such that an ALD or MLD barrier coating can be formed on the fluid wetted surfaces of the fluid handling component, and an exhaust system in fluid communication with the process region of the component wherein the exhaust system exhausts the process gases from the process region of the component through the outlet port thereof.

Abstract translation: 一种用于在半导体衬底处理设备的真空室的流体处理部件的内部流体润湿表面上形成原子层沉积（ALD）或分子层沉积（MLD）阻挡涂层的涂层系统。 涂层系统包括流体处理部件，其中内部流体润湿表面限定涂层系统的工艺区域，与部件的工艺区域流体连通的气体供应系统，其中气体供应系统将工艺气体提供给过程区域 的组件通过其入口使得可以在流体处理组件的流体润湿表面上形成ALD或MLD阻挡涂层，以及与组件的处理区域流体连通的排气系统，其中排气系统排出 从组件的工艺区域通过其出口处理气体。

公开(公告)号：US09028646B2

公开(公告)日：2015-05-12

申请号：US13869603

申请日：2013-04-24

Applicant: Lam Research Corporation

Inventor： Dean J. Larson ,  Tom Stevenson ,  Victor Wang

IPC: H01L21/67 ,  B32B37/12 ,  H01L21/687

CPC classification number: H01L21/67069 ,  B32B37/12 ,  H01L21/67103 ,  H01L21/68757 ,  Y10T156/10 ,  Y10T156/1062 ,  Y10T428/31504

Abstract: A bonded assembly to reduce particle contamination in a semiconductor vacuum chamber such as a plasma processing apparatus is provided, including an elastomeric sheet adhesive bond between mating surfaces of a component and a support member to accommodate thermal stresses. The elastomeric sheet comprises a silicone adhesive to withstand a high shear strain of ≧800% at a temperature range between room temperature and 300° C. such as heat curable high molecular weight dimethyl silicone with optional fillers. The sheet form has bond thickness control for parallelism of bonded surfaces. The sheet adhesive may be cut into pre-form shapes to conform to regularly or irregularly shaped features, maximize surface contact area with mating parts, and can be installed into cavities. Installation can be manually, manually with installation tooling, or with automated machinery. Composite layers of sheet adhesive having different physical properties can be laminated or coplanar.

Abstract translation: 提供了一种用于减少诸如等离子体处理装置的半导体真空室中的颗粒污染的粘合组件，包括在部件的配合表面和支撑构件之间的弹性片粘合剂粘合以适应热应力。 弹性体片材包括硅氧烷粘合剂，以在室温和300℃之间的温度范围内承受≥800％的高剪切应变，例如具有任选填料的可热固化的高分子量二甲基硅氧烷。 片材形式具有用于粘结表面平行度的粘结厚度控制。 片状粘合剂可以被切割成预成型形状以符合规则或不规则形状的特征，使与配合部件的表面接触面积最大化，并且可以安装到空腔中。 安装可以手动，手动安装工具或自动化机械。 具有不同物理性质的片状粘合剂的复合层可以层压或共面。

公开(公告)号：US20130292048A1

公开(公告)日：2013-11-07

申请号：US13869603

申请日：2013-04-24

Applicant: Lam Research Corporation

Inventor： Dean J. Larson ,  Tom Stevenson ,  Victor Wang

IPC: H01L21/67 ,  B32B37/12

CPC classification number: H01L21/67069 ,  B32B37/12 ,  H01L21/67103 ,  H01L21/68757 ,  Y10T156/10 ,  Y10T156/1062 ,  Y10T428/31504

Abstract: A bonded assembly to reduce particle contamination in a semiconductor vacuum chamber such as a plasma processing apparatus is provided, including an elastomeric sheet adhesive bond between mating surfaces of a component and a support member to accommodate thermal stresses. The elastomeric sheet comprises a silicone adhesive to withstand a high shear strain of ≧800% at a temperature range between room temperature and 300° C. such as heat curable high molecular weight dimethyl silicone with optional fillers. The sheet form has bond thickness control for parallelism of bonded surfaces. The sheet adhesive may be cut into pre-form shapes to conform to regularly or irregularly shaped features, maximize surface contact area with mating parts, and can be installed into cavities. Installation can be manually, manually with installation tooling, or with automated machinery. Composite layers of sheet adhesive having different physical properties can be laminated or coplanar.

Abstract translation: 提供了一种用于减少诸如等离子体处理装置的半导体真空室中的颗粒污染的粘合组件，包括在部件的配合表面和支撑构件之间的弹性片粘合剂粘合以适应热应力。 弹性体片材包含硅氧烷粘合剂，以在室温至300℃的温度范围内承受≥800％的高剪切应变，例如具有任选填料的可热固化的高分子量二甲基硅氧烷。 片材形式具有用于粘结表面平行度的粘结厚度控制。 片状粘合剂可以被切割成预成型形状以符合规则或不规则形状的特征，使与配合部件的表面接触面积最大化，并且可以安装到空腔中。 安装可以手动，手动安装工具或自动化机械。 具有不同物理性质的片状粘合剂的复合层可以层压或共面。

公开(公告)号：US20130102156A1

公开(公告)日：2013-04-25

申请号：US13625489

申请日：2012-09-24

Applicant: Lam Research Corporation

Inventor： Tom Stevenson ,  Hong Shih ,  Robert G. O'Neill ,  Tae Won Kim ,  Raphael Casaes ,  Yan Fang

IPC: B05B1/00 ,  B32B3/02 ,  H01L21/3065 ,  B32B3/30 ,  B05D3/12 ,  C23C16/44

CPC classification number: H01J37/32477 ,  Y10T428/218 ,  Y10T428/24471

Abstract: A component of a plasma processing chamber includes a three dimensional body having a highly dense plasma resistant coating thereon wherein a plasma exposed surface of the coating has a texture which inhibits particle generation from film buildup on the plasma exposed surface. The component can be a window of an inductively coupled plasma reactor wherein the window includes a textured yttria coating. The texture can be provided by contacting the plasma exposed surface with a polishing pad having a grit size effective to provide intersecting scratches with a depth of 1 to 2 microns.

Abstract translation: 等离子体处理室的组件包括其上具有高致密等离子体涂层的三维体，其中涂层的等离子体暴露表面具有抑制由等离子体暴露表面上的膜积累产生颗粒的结构。 该组件可以是电感耦合等离子体反应器的窗口，其中窗口包括织构化的氧化钇涂层。 可以通过使等离子体暴露的表面与具有有效的砂粒尺寸的抛光垫接触以提供1至2微米的深度的交叉划痕来提供纹理。