公开(公告)号：US20140154888A1

公开(公告)日：2014-06-05

申请号：US14170732

申请日：2014-02-03

Applicant: Lam Research Corporation

Inventor： Tom Stevenson ,  Rajinder Dhindsa

IPC: H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/3065 ,  C23C16/45565 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32605 ,  H01L21/67069

Abstract: Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact regions across the backing plate; and at least one interface member separating the backing plate and the thermal control plate, or the thermal control plate and showerhead electrode, at the contact regions, the interface member having a thermally and electrically conductive gasket portion and a particle mitigating seal portion. Methods of processing semiconductor substrates using the showerhead electrode assemblies are also disclosed.

Abstract translation: 公开了一种喷头电极组件，其包括适于安装在真空室内部的喷头电极; 连接到喷头电极的可选背板; 热控制板，其在跨过所述背板的多个接触区域附接到所述背板或所述喷头电极; 以及至少一个界面构件，其在所述接触区域处分离所述背板和所述热控制板或所述热控制板和喷头电极，所述界面构件具有导热和导电的垫圈部分和颗粒减轻密封部分。 还公开了使用喷头电极组件处理半导体衬底的方法。

公开(公告)号：US09873940B2

公开(公告)日：2018-01-23

申请号：US14572087

申请日：2014-12-16

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  Hong Shih ,  Nash Anderson ,  Tom Stevenson ,  John Daugherty ,  John Michael Kerns ,  Robert Griffith O'Neill

IPC: C23C16/455 ,  C23C14/56 ,  C23C16/04 ,  C23C16/44

CPC classification number: C23C14/564 ,  C23C16/045 ,  C23C16/4402 ,  C23C16/4404 ,  C23C16/45525 ,  Y10T29/41 ,  Y10T428/263 ,  Y10T428/31504 ,  Y10T428/31551 ,  Y10T428/31678 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31786

Abstract: A coating system for forming an atomic layer deposition (ALD) or a molecular layer deposition (MLD) barrier coating on interior fluid wetted surfaces of a fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus. The coating system includes the fluid handling component, wherein the interior fluid wetted surfaces define a process region of the coating system, a gas supply system in fluid communication with the process region of the component wherein the gas supply system supplies process gases to the process region of the component through the inlet port thereof such that an ALD or MLD barrier coating can be formed on the fluid wetted surfaces of the fluid handling component, and an exhaust system in fluid communication with the process region of the component wherein the exhaust system exhausts the process gases from the process region of the component through the outlet port thereof.

公开(公告)号：US09123651B2

公开(公告)日：2015-09-01

申请号：US13851605

申请日：2013-03-27

Applicant: Lam Research Corporation

Inventor： Hong Shih ,  Lin Xu ,  John Michael Kerns ,  William Charles ,  John Daugherty ,  Sivakami Ramanathan ,  Russell Ormond ,  Robert G. O'Neill ,  Tom Stevenson

IPC: H01L21/3065 ,  H01L21/02 ,  C25D11/02 ,  C23C16/44

CPC classification number: C25D11/026 ,  C23C16/4404 ,  C23C24/00 ,  C23C28/322 ,  C23C28/345 ,  C25D11/04 ,  C25D11/12 ,  C25D11/16 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/78 ,  Y10T428/12479 ,  Y10T428/12549 ,  Y10T428/1259

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。

公开(公告)号：US20130244441A1

公开(公告)日：2013-09-19

申请号：US13828176

申请日：2013-03-14

Applicant: LAM RESEARCH CORPORATION

Inventor： Dean Jay Larson ,  Tom Stevenson ,  Victor Wang

IPC: H01L21/3065 ,  H05K13/00

CPC classification number: H01L21/3065 ,  B29C65/483 ,  B29C65/4835 ,  B29C65/4855 ,  B29C65/4865 ,  B29C65/4875 ,  B29C65/4885 ,  B29C65/5028 ,  B29C65/5057 ,  B29C65/5071 ,  B29C66/73111 ,  B29C66/73112 ,  B29C66/742 ,  B29K2305/00 ,  B32B37/025 ,  B32B37/1292 ,  B32B38/145 ,  B32B38/164 ,  B32B2307/202 ,  B32B2309/02 ,  B32B2309/10 ,  B32B2309/105 ,  B32B2457/00 ,  C23C16/45565 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/3255 ,  H05K13/00 ,  Y10T29/49 ,  Y10T29/49002 ,  Y10T29/5313 ,  Y10T29/532 ,  Y10T29/53204 ,  Y10T156/10 ,  Y10T156/1062

Abstract: A method of forming an elastomeric sheet adhesive bond between mating surfaces of an electrode and a backing member to accommodate stresses generated during temperature cycling due to mismatch in coefficients of thermal expansion. The elastomeric sheet comprises a thermally conductive silicone adhesive able to withstand a high shear strain of ≧300% in a temperature range of room temperature to 300° C. such as heat curable high molecular weight dimethyl silicone with fillers. Installation can be manually, manually with installation tooling, or with automated machinery.

Abstract translation: 在电极和背衬构件的配合表面之间形成弹性体片粘合剂的方法，以适应在温度循环期间由于热膨胀系数不匹配而产生的应力。 弹性体片材包括能够在室温至300℃的温度范围内承受≥300％的高剪切应变的导热硅酮粘合剂，例如具有填料的可热固化的高分子量二甲基硅氧烷。 安装可以手动，手动安装工具或自动化机械。

公开(公告)号：US09899228B2

公开(公告)日：2018-02-20

申请号：US14170732

申请日：2014-02-03

Applicant: Lam Research Corporation

Inventor： Tom Stevenson ,  Rajinder Dhindsa

IPC: C23F1/00 ,  H01L21/00 ,  C23C16/00 ,  H01L21/3065 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/3065 ,  C23C16/45565 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32605 ,  H01L21/67069

Abstract: Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact regions across the backing plate; and at least one interface member separating the backing plate and the thermal control plate, or the thermal control plate and showerhead electrode, at the contact regions, the interface member having a thermally and electrically conductive gasket portion and a particle mitigating seal portion. Methods of processing semiconductor substrates using the showerhead electrode assemblies are also disclosed.

公开(公告)号：US20150187615A1

公开(公告)日：2015-07-02

申请号：US14578979

申请日：2014-12-22

Applicant: Lam Research Corporation

Inventor： John Daugherty ,  Hong Shih ,  Anthony Amadio ,  Tom Stevenson ,  Lin Xu ,  John Michael Kerns ,  Robert Griffith O'Neill ,  Sonia Castillo

IPC: H01L21/67 ,  H01L21/02 ,  C25D11/02 ,  H01L21/3065 ,  C23C24/04 ,  C23C22/73

CPC classification number: H01L21/02274 ,  C23C16/4404 ,  C23C16/50 ,  C23C24/04 ,  C25D11/04 ,  C25D11/38 ,  H01J37/321 ,  H01J37/32669

Abstract: A semiconductor plasma processing apparatus used to process semiconductor components comprises a plasma processing chamber, a process gas source in fluid communication with the plasma processing chamber for supplying a process gas into the plasma processing chamber, a RF energy source adapted to energize the process gas into the plasma state in the plasma processing chamber, and a vacuum port for exhausting process gas from the plasma processing chamber. The semiconductor plasma processing apparatus further comprises at least one component wherein the component has a body which has a relative magnetic permeability of about 70,000 or greater and a cold sprayed electrically conductive and nonmagnetic coating on a surface of the body wherein the coating has a thickness greater than the skin depth of a RF current configured to flow therethrough during plasma processing.

Abstract translation: 用于处理半导体部件的半导体等离子体处理装置包括等离子体处理室，与等离子体处理室流体连通的处理气体源，用于将处理气体供应到等离子体处理室中; RF能量源，其适于将工艺气体激励成 等离子体处理室中的等离子体状态，以及用于从等离子体处理室排出处理气体的真空端口。 半导体等离子体处理装置还包括至少一种组分，其中组分具有约70,000或更大的相对磁导率的本体和在体表面上的冷喷涂的导电和非磁性涂层，其中涂层具有更大的厚度 比在等离子体处理期间配置为流过其中的RF电流的趋肤深度。

公开(公告)号：US08975817B2

公开(公告)日：2015-03-10

申请号：US13653923

申请日：2012-10-17

Applicant: Lam Research Corporation

Inventor： Michael C. Kellogg ,  Rajinder Dhindsa ,  Tom Stevenson

IPC: H01J7/24 ,  H01J37/32

CPC classification number: H01J37/32449

Abstract: A showerhead electrode assembly for a plasma processing chamber, which includes a showerhead electrode; a heater plate secured to the showerhead electrode; at least one pressure controlled heat pipe secured to an upper surface of the heater plate, the at least one pressure controlled heat pipe having a heat transfer liquid contained therein, and a pressurized gas, which produces a variable internal pressure within the at least one pressure controlled heat pipe; a top plate secured to an upper surface of the at least one heat pipe; and wherein the variable internal pressure within the at least one pressure controlled heat pipe during heating of the showerhead electrode by the heater plate displaces the heat transfer liquid from a thermal path between the top plate and the heater plate, and when removing excess heat from the showerhead electrode returns the heat transfer liquid to the thermal path.

Abstract translation: 一种用于等离子体处理室的喷头电极组件，其包括喷头电极; 固定在喷头电极上的加热板; 至少一个受压控制的热管固定到加热器板的上表面，所述至少一个压力控制的热管具有其中包含的传热液体，以及加压气体，其在所述至少一个压力内产生可变的内部压力 受控热管; 固定到所述至少一个热管的上表面的顶板; 并且其中，通过所述加热板加热所述喷头电极期间所述至少一个压力控制热管内的可变内部压力将所述传热液体从所述顶板和所述加热板之间的热路径移位，并且当从所述加热板 喷头电极将热传递液体返回到热路径。

公开(公告)号：US20140295670A1

公开(公告)日：2014-10-02

申请号：US13851605

申请日：2013-03-27

Applicant: LAM RESEARCH CORPORATION

Inventor： Hong Shih ,  Lin Xu ,  John Michael Kerns ,  William Charles ,  John Daugherty ,  Sivakami Ramanathan ,  Russell Ormond ,  Robert G. O'Neill ,  Tom Stevenson

IPC: H01L21/3065 ,  H01L21/02 ,  C25D11/02 ,  H01L21/67

CPC classification number: C25D11/026 ,  C23C16/4404 ,  C23C24/00 ,  C23C28/322 ,  C23C28/345 ,  C25D11/04 ,  C25D11/12 ,  C25D11/16 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/78 ,  Y10T428/12479 ,  Y10T428/12549 ,  Y10T428/1259

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。

公开(公告)号：US08701268B2

公开(公告)日：2014-04-22

申请号：US13828176

申请日：2013-03-14

Applicant: Lam Research Corporation

Inventor： Dean Jay Larson ,  Tom Stevenson ,  Victor Wang

IPC: H01S4/00 ,  B23P17/04 ,  B23P19/00 ,  H01L21/306 ,  C23F1/00

CPC classification number: H01L21/3065 ,  B29C65/483 ,  B29C65/4835 ,  B29C65/4855 ,  B29C65/4865 ,  B29C65/4875 ,  B29C65/4885 ,  B29C65/5028 ,  B29C65/5057 ,  B29C65/5071 ,  B29C66/73111 ,  B29C66/73112 ,  B29C66/742 ,  B29K2305/00 ,  B32B37/025 ,  B32B37/1292 ,  B32B38/145 ,  B32B38/164 ,  B32B2307/202 ,  B32B2309/02 ,  B32B2309/10 ,  B32B2309/105 ,  B32B2457/00 ,  C23C16/45565 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/3255 ,  H05K13/00 ,  Y10T29/49 ,  Y10T29/49002 ,  Y10T29/5313 ,  Y10T29/532 ,  Y10T29/53204 ,  Y10T156/10 ,  Y10T156/1062

Abstract: A method of forming an elastomeric sheet adhesive bond between mating surfaces of an electrode and a backing member to accommodate stresses generated during temperature cycling due to mismatch in coefficients of thermal expansion. The elastomeric sheet comprises a thermally conductive silicone adhesive able to withstand a high shear strain of ≧300% in a temperature range of room temperature to 300° C. such as heat curable high molecular weight dimethyl silicone with fillers. Installation can be manually, manually with installation tooling, or with automated machinery.

Abstract translation: 在电极和背衬构件的配合表面之间形成弹性体片粘合剂的方法，以适应在温度循环期间由于热膨胀系数不匹配而产生的应力。 弹性体片材包括能够在室温至300℃的温度范围内承受≥300％的高剪切应变的导热硅胶粘合剂，例如具有填料的热固化高分子量二甲基硅酮。 安装可以手动，手动安装工具或自动化机械。

公开(公告)号：US20140103806A1

公开(公告)日：2014-04-17

申请号：US13653923

申请日：2012-10-17

Applicant: LAM RESEARCH CORPORATION

Inventor： Michael C. Kellogg ,  Rajinder Dhindsa ,  Tom Stevenson

IPC: B05B1/24 ,  H05H1/24

CPC classification number: H01J37/32449

Abstract: A showerhead electrode assembly for a plasma processing chamber, which includes a showerhead electrode; a heater plate secured to the showerhead electrode; at least one pressure controlled heat pipe secured to an upper surface of the heater plate, the at least one pressure controlled heat pipe having a heat transfer liquid contained therein, and a pressurized gas, which produces a variable internal pressure within the at least one pressure controlled heat pipe; a top plate secured to an upper surface of the at least one heat pipe; and wherein the variable internal pressure within the at least one pressure controlled heat pipe during heating of the showerhead electrode by the heater plate displaces the heat transfer liquid from a thermal path between the top plate and the heater plate, and when removing excess heat from the showerhead electrode returns the heat transfer liquid to the thermal path.

Abstract translation: 一种用于等离子体处理室的喷头电极组件，其包括喷头电极; 固定在喷头电极上的加热板; 至少一个受压控制的热管固定到加热器板的上表面，所述至少一个压力控制的热管具有其中包含的传热液体，以及加压气体，其在所述至少一个压力内产生可变的内部压力 受控热管; 固定到所述至少一个热管的上表面的顶板; 并且其中，通过所述加热板加热所述喷头电极期间所述至少一个压力控制热管内的可变内部压力将所述传热液体从所述顶板和所述加热板之间的热路径移位，并且当从所述加热板 喷头电极将热传递液体返回到热路径。