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    Thin Film Transistor, Method for Manufacturing the Same, and Display Device Comprising the Same
    14.
    发明申请
    Thin Film Transistor, Method for Manufacturing the Same, and Display Device Comprising the Same 有权
    薄膜晶体管及其制造方法以及包括其的显示装置

    公开(公告)号：US20160087108A1

    公开(公告)日：2016-03-24

    申请号：US14960265

    申请日：2015-12-04

    Applicant: LG Display Co., Ltd.

    Inventor： SeYeoul Kwon ,  MinGu Cho ,  Sangcheon Youn

    IPC: H01L29/786 ,  G02F1/167 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/32

    CPC classification number: H01L29/78618 ,  G02F1/1368 ,  G02F1/167 ,  H01L27/1225 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

    Abstract: A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film transistor comprises an oxide semiconductor layer, a gate electrode, a source electrode and a drain electrode formed on a substrate in a coplanar configuration. A first conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the source electrode. A second conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the drain electrode. The first conductive member and the second conductive member are arranged to decrease resistance between a channel region of the oxide semiconductor layer and the source and drain electrodes.

    Abstract translation: 提供薄膜晶体管，制造薄膜晶体管的方法以及包括薄膜晶体管的显示装置。 薄膜晶体管包括以共面构造形成在基板上的氧化物半导体层，栅电极，源电极和漏电极。 第一导电构件与氧化物半导体层直接接触并与源电极直接接触。 第二导电构件与氧化物半导体层直接接触并与漏电极直接接触。 第一导电构件和第二导电构件被布置成降低氧化物半导体层的沟道区域与源极和漏极之间的电阻。

    Flexible organic light emitting display and method of manufacturing the same
    15.
    发明授权
    Flexible organic light emitting display and method of manufacturing the same 有权
    柔性有机发光显示器及其制造方法

    公开(公告)号：US09287342B2

    公开(公告)日：2016-03-15

    申请号：US14559386

    申请日：2014-12-03

    Applicant: LG Display Co., Ltd.

    Inventor： SeYeoul Kwon ,  SangCheon Youn ,  Saemleenuri Lee

    IPC: H01L27/32 ,  H01L51/00

    CPC classification number: H01L27/3276 ,  H01L27/3258 ,  H01L51/0097 ,  H01L2251/5338 ,  Y02E10/549

    Abstract: Provided is a flexible organic light-emitting display device. The flexible display device includes a flexible substrate having a display area, a non-display area, and a bending area. On the flexible substrate, a first insulation layer is formed in a part of the non-display area. The first insulation layer includes a zigzag pattern. A plurality of wirings are electrically connected to the display area and are extended to traverse the non-display area and the bending area and are disposed on the first insulation layer. On the first insulation layer and the plurality of wirings, a passivation layer is formed. By virtue of a zigzag pattern of the first insulation layer, the frequency of occurrence of cracks in the passivation layer is reduced.

    Abstract translation: 提供了一种柔性有机发光显示装置。 柔性显示装置包括具有显示区域，非显示区域和弯曲区域的柔性基板。 在柔性基板上，在非显示区域的一部分中形成第一绝缘层。 第一绝缘层包括锯齿形图案。 多个布线电连接到显示区域并延伸以横越非显示区域和弯曲区域并且布置在第一绝缘层上。 在第一绝缘层和多根布线上形成钝化层。 通过第一绝缘层的锯齿形图案，钝化层中出现裂纹的频率降低。

    Thin film transistor, method for manufacturing the same, and display device comprising the same
    17.
    发明授权
    Thin film transistor, method for manufacturing the same, and display device comprising the same 有权
    薄膜晶体管及其制造方法以及包括该薄膜晶体管的显示装置

    公开(公告)号：US09231107B2

    公开(公告)日：2016-01-05

    申请号：US14095617

    申请日：2013-12-03

    Applicant: LG Display Co., Ltd.

    Inventor： SeYeoul Kwon ,  MinGu Cho ,  Sangcheon Youn

    IPC: H01L29/10 ,  H01L29/786

    CPC classification number: H01L29/78618 ,  G02F1/1368 ,  G02F1/167 ,  H01L27/1225 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

    Abstract: A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film transistor comprises an oxide semiconductor layer, a gate electrode, a source electrode and a drain electrode formed on a substrate in a coplanar configuration. A first conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the source electrode. A second conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the drain electrode. The first conductive member and the second conductive member are arranged to decrease resistance between a channel region of the oxide semiconductor layer and the source and drain electrodes.

    Abstract translation: 提供薄膜晶体管，制造薄膜晶体管的方法以及包括薄膜晶体管的显示装置。 薄膜晶体管包括以共面构造形成在基板上的氧化物半导体层，栅电极，源电极和漏电极。 第一导电构件与氧化物半导体层直接接触并与源电极直接接触。 第二导电构件与氧化物半导体层直接接触并与漏电极直接接触。 第一导电构件和第二导电构件被布置成降低氧化物半导体层的沟道区域与源极和漏极之间的电阻。

    THIN-FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE COMPRISING THE SAME
    19.
    发明申请
    THIN-FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE COMPRISING THE SAME 有权
    薄膜晶体管，其制造方法和包括其的显示器件

    公开(公告)号：US20140183476A1

    公开(公告)日：2014-07-03

    申请号：US14101144

    申请日：2013-12-09

    Applicant: LG Display Co. Ltd.

    Inventor： SeYeoul Kwon ,  MinGu Cho ,  Sangcheon Youn

    IPC: H01L27/32 ,  H01L29/786

    CPC classification number: H01L27/3272 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/7869 ,  H01L31/036

    Abstract: A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film transistor comprises a gate electrode formed on the oxide semiconductor layer such that a first surface of the oxide semiconductor layer faces the gate electrode. A source electrode and a drain electrode are electrically connected to the oxide semiconductor layer, respectively. The oxide semiconductor layer, gate electrode, source electrode and drain electrode are arranged in a coplanar transistor configuration. A light-blocking element is also arranged to shield a second surface of the oxide semiconductor layer from external light.

    Abstract translation: 提供薄膜晶体管，制造薄膜晶体管的方法以及包括薄膜晶体管的显示装置。 薄膜晶体管包括形成在氧化物半导体层上的栅电极，使得氧化物半导体层的第一表面面向栅电极。 源电极和漏电极分别电连接到氧化物半导体层。 氧化物半导体层，栅电极，源电极和漏电极以共面晶体管配置布置。 遮光元件还被布置成将氧化物半导体层的第二表面与外部光屏蔽。

    Light emitting display device
    20.
    发明授权
    Light emitting display device 有权

    公开(公告)号：US10707438B2

    公开(公告)日：2020-07-07

    申请号：US16226404

    申请日：2018-12-19

    Applicant: LG DISPLAY CO., LTD.

    Inventor： Hoiyong Kwon ,  SeYeoul Kwon

    IPC: H01L27/14 ,  H01L29/04 ,  H01L31/036 ,  H01L51/52 ,  H01L27/32

    Abstract: A light emitting display device includes a substrate including a plurality of sub pixel areas having an emission area and an anode contact area, a driving thin film transistor disposed in each of the plurality of sub pixel areas, a planarization layer disposed on the substrate, a cathode electrode disposed on the planarization layer overlapped with the emission area, a plurality of connection electrode patterns disposed on the planarization layer overlapped with the anode contact area, and connected with respective source electrodes of the driving thin film transistors disposed in the plurality of sub pixel areas by one-to-one correspondence, an emission layer disposed on the cathode electrode, and a plurality of anode electrodes disposed on the emission layer, and connected with the plurality of connection electrode patterns through the anode contact area by one-to-one correspondence.

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