公开(公告)号：US20230215955A1

公开(公告)日：2023-07-06

申请号：US17985634

申请日：2022-11-11

Applicant: LG Display Co., Ltd.

Inventor： Seoyeon IM ,  Sungju CHOI ,  JungSeok SEO ,  Jaeyoon PARK ,  Jinwon JUNG

IPC: H01L29/786 ,  H01L27/32 ,  H01L27/12

CPC classification number: H01L29/78696 ,  H01L29/7869 ,  H01L27/3262 ,  H01L27/1214

Abstract: Embodiments of the disclosure relate to a thin film transistor array substrate and an electronic device including the same. Specifically, there may be provided a thin film transistor array substrate and an electronic device including the same, which may have high current characteristics in a small area, by including a first electrode, a first insulation film including a hole exposing a portion of an upper surface of the first electrode, an active layer contacting a portion of an upper surface of the first insulation film and the portion of the upper surface of the first electrode, a second insulation film disposed on the active layer, a gate electrode disposed on the second insulation film, a third insulation film disposed on the gate electrode, and a second electrode and a third electrode disposed on the third insulation film, spaced apart from each other, and electrically connected with the active layer, wherein the same signal is applied to the second electrode and the third electrode, wherein the active layer includes a first channel area and a second channel area spaced apart from each other, and wherein the first channel area and the second channel area include an area positioned on a side surface of the hole of the first insulation film.

公开(公告)号：US20190249299A1

公开(公告)日：2019-08-15

申请号：US16254264

申请日：2019-01-22

Applicant: LG Display Co., Ltd.

Inventor： Jaeyoon PARK ,  JaeHyeon PARK ,  KiHoon PARK ,  PilSang YUN

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  H01L27/12

CPC classification number: C23C16/45523 ,  C23C16/40 ,  C23C16/407 ,  C23C16/4412 ,  C23C16/4481 ,  C23C16/4485 ,  C23C16/45561 ,  H01L27/1262

Abstract: Disclosed are an apparatus and method of manufacturing an oxide film having a uniform composition and thickness. The apparatus includes a lower chamber including a reaction space, a susceptor to support a substrate, a chamber lid including gas injection ports, a gas distribution module between the chamber lid and the susceptor and connected to the gas injection ports, a first source container module comprising a first source gas having a first vapor pressure, a first carrier gas supply module supplying a first carrier gas to the first source container module, a second source container module comprising a second source gas having a second vapor pressure, a force gas supply module supplying a force gas, and a reactant gas supply module supplying a reactant gas.

公开(公告)号：US20230140193A1

公开(公告)日：2023-05-04

申请号：US17977864

申请日：2022-10-31

Applicant: LG Display Co., Ltd.

Inventor： Sungju CHOI ,  JungSeok SEO ,  Younghyun KO ,  Jaeyoon PARK ,  Seoyeon IM ,  Jinwon JUNG

IPC: H01L29/786 ,  H01L27/32 ,  H01L27/12

Abstract: A thin film transistor and a display device comprising the same are provided. The thin film transistor includes an active layer, and a gate electrode at least partially overlapped with the active layer. The active layer includes a channel portion, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion. The channel portion includes a first area and a second area that is disposed in parallel with the first area, each of the first area and the second area is extended from the first connection portion to the second connection portion. An effective gate voltage applied to the first area is smaller than that applied to the second area.

公开(公告)号：US20220173130A1

公开(公告)日：2022-06-02

申请号：US17671452

申请日：2022-02-14

Applicant: LG Display Co. Ltd.

Inventor： Kwanghwan JI ,  HongRak CHOI ,  Jeyong JEON ,  Jaeyoon PARK

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L49/02 ,  H01L29/786

Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.

公开(公告)号：US20200161475A1

公开(公告)日：2020-05-21

申请号：US16574725

申请日：2019-09-18

Applicant: LG DISPLAY CO., LTD.

Inventor： InTak CHO ,  JungSeok SEO ,  SeHee PARK ,  Jaeyoon PARK ,  SangYun SUNG

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/10

Abstract: An electronic device can include a panel; a driver circuit configured to drive the panel; and a transistor disposed in the panel, the transistor including a first electrode disposed on a substrate, an insulation pattern disposed on the substrate, the insulation pattern overlapping with an edge of the first electrode, a second electrode disposed on an upper surface of the insulation pattern, an active layer disposed on the first electrode, the insulation pattern and the second electrode, a gate insulating film disposed on the active layer, and a gate electrode disposed on the gate insulating film, in which a first portion of the active layer overlaps with the first electrode, a second portion of the active layer overlaps with the second electrode, and a channel area of the active layer is between the first portion of the active layer and the second portion of the active layer, and the channel area includes a first channel portion disposed along a side surface of the insulation pattern, and a second channel portion disposed on a portion of the upper surface of the insulation pattern, the second channel portion extending from an edge of the second electrode to the first channel portion.

公开(公告)号：US20180190798A1

公开(公告)日：2018-07-05

申请号：US15858065

申请日：2017-12-29

Applicant: LG Display Co., Ltd.

Inventor： Jaeyoon PARK ,  SeHee PARK ,  HyungJoon KOO ,  Kwanghwan JI ,  PilSang YUN

IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L21/02

Abstract: Disclosed are an oxide thin film transistor (TFT), a method of manufacturing the same, a display panel including the oxide TFT, and a display device including the display panel, in which a crystalline oxide semiconductor is provided on a metal insulation layer including metal through a metal organic chemical vapor deposition (MOCVD) process. The oxide TFT includes a metal insulation layer including metal, a crystalline oxide semiconductor adjacent to the metal insulation layer, a gate including metal, a gate insulation layer between the crystalline oxide semiconductor and the gate, a first conductor in one end of the crystalline oxide semiconductor, and a second conductor in another end of the crystalline oxide semiconductor.