公开(公告)号：US20190245101A1

公开(公告)日：2019-08-08

申请号：US16388491

申请日：2019-04-18

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Youngho CHOE ,  Changseo PARK

IPC: H01L31/0224 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/068

CPC classification number: H01L31/022441 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/0684 ,  Y02E10/547

Abstract: A bifacial solar cell includes a substrate formed of a silicon wafer having an n-type conductivity; an emitter region positioned on a front surface of the substrate and having a p-type conductivity; a front negative fixed charge layer on the emitter region, and a front positive fixed charge layer on the front negative fixed charge; a plurality of first front electrodes extending in a first direction and connected to the emitter region through the front negative fixed charge layer and the front positive fixed charge layer; a plurality of second front electrodes extending in a second direction crossing the first direction and electrically and physically connected to the plurality of first front electrodes; a back aluminum oxide layer and a back silicon nitride layer on a back surface of the substrate; a plurality of back surface field regions extending in the first direction and locally positioned on the back surface of the substrate; a plurality of first back electrodes extending in the first direction and directly positioned on the plurality of back surface field regions through the back aluminum oxide layer and the back silicon nitride layer; and a plurality of second back electrodes extending in the second direction and electrically and physically connected to the plurality of first back electrodes, wherein the front negative fixed charge layer and the back aluminum oxide layer have the same thickness.

公开(公告)号：US20170278986A1

公开(公告)日：2017-09-28

申请号：US15465026

申请日：2017-03-21

Applicant: LG ELECTRONICS INC.

Inventor： Jinhyung LEE ,  Jungmin HA ,  Sangwook PARK

IPC: H01L31/02 ,  H01L31/075 ,  H01L31/0224 ,  H01L31/0747 ,  H01L31/05 ,  H01L31/048

CPC classification number: H01L31/02013 ,  H01L31/0201 ,  H01L31/022425 ,  H01L31/022433 ,  H01L31/022466 ,  H01L31/0481 ,  H01L31/0504 ,  H01L31/0512 ,  H01L31/0747 ,  H01L31/075 ,  Y02E10/50

Abstract: A solar cell panel includes a first solar cell and a second solar cell; and a plurality of leads connecting the first solar cell and the second solar cell. Each of the first solar cell and the second solar cell includes: a first electrode including a plurality of finger lines in a first direction and a plurality of first bus bars in a second direction crossing the first direction; and a second electrode including a plurality of second bus bars in the second direction. The plurality of leads have a diameter or width of 100 to 500 μm, and include 6 or more leads arranged at one surface side of the first or second solar cell. The plurality of leads are connected to the plurality of first bus bars of the first solar cell and the plurality of second bus bars of the second solar cell by a solder layer, respectively.

公开(公告)号：US20160155866A1

公开(公告)日：2016-06-02

申请号：US14953264

申请日：2015-11-27

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/0224 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/022433 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50

Abstract: Disclosed are a solar cell and a method for manufacturing the same. A solar cell includes a semiconductor substrate, a tunnel layer on the first surface of the semiconductor substrate, a first conductive type semiconductor region on the tunnel layer and includes impurities of a first conductive type, a second conductive type semiconductor region on a second surface and includes impurities of a second conductive type opposite the first conductive type, a first passivation film on the first conductive type semiconductor region, a first electrode formed on the first passivation film and connected to the first conductive type semiconductor region through an opening portion formed in the first passivation film, a second passivation film on the second conductive type semiconductor region, and a second electrode formed on the second passivation film and connected to the second conductive type semiconductor region through an opening portion formed in the second passivation film.

Abstract translation: 公开了一种太阳能电池及其制造方法。 太阳能电池包括半导体衬底，半导体衬底的第一表面上的隧道层，隧道层上的第一导电类型半导体区域，并且包括第一导电类型的杂质，第二表面上的第二导电类型半导体区域， 包括与第一导电类型相反的第二导电类型的杂质，第一导电类型半导体区域上的第一钝化膜，形成在第一钝化膜上并通过形成在第一导电类型半导体区域中的开口部分连接到第一导电类型半导体区域的第一电极 第一钝化膜，第二导电型半导体区域上的第二钝化膜，以及形成在第二钝化膜上并通过形成在第二钝化膜中的开口部分连接到第二导电型半导体区域的第二电极。

公开(公告)号：US20150303348A1

公开(公告)日：2015-10-22

申请号：US14788057

申请日：2015-06-30

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Junyong AHN ,  Jinho KIM

IPC: H01L31/18 ,  H01L31/068 ,  H01L31/0224

CPC classification number: H01L31/1804 ,  H01L31/022425 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

Abstract: A manufacturing method of selective emitter solar cell can include, forming an emitter layer positioned on a light receiving surface of the substrate having a first conductive type, the emitter layer having a second conductive type opposite to the first conductive type, forming a first emitter portion having a first impurity concentration and a second emitter portion having a second impurity concentration higher than the first impurity concentration on the emitter layer using a etch stop mask or a mask pattern, and forming a plurality of first electrodes connected to the second emitter portion, wherein the second emitter portion includes a first region that contacts the first electrodes and overlaps the first electrodes and a second region that is positioned around the first region and does not overlap the first electrodes, and the line width of the second region is more than the line width of each first electrode and less than four times the line width of each first electrode.

Abstract translation: 选择性发射太阳能电池的制造方法可以包括：形成位于具有第一导电类型的基板的受光面上的发射极层，发射极层具有与第一导电类型相反的第二导电类型，形成第一发射极部分 使用蚀刻停止掩模或掩模图案，具有第一杂质浓度和第二发射极部分，其具有高于发射极层上的第一杂质浓度的第二杂质浓度，以及形成连接到第二发射极部分的多个第一电极，其中 第二发射极部分包括接触第一电极并与第一电极重叠的第一区域和位于第一区域周围并且不与第一电极重叠的第二区域，并且第二区域的线宽大于线 每个第一电极的宽度小于每个第一电极的线宽度的四倍。

公开(公告)号：US20150228843A1

公开(公告)日：2015-08-13

申请号：US14691396

申请日：2015-04-20

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Junyong AHN ,  Jinho KIM

IPC: H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/186 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/52 ,  Y02E10/547

Abstract: A method for manufacturing a solar cell is discussed. The method may include injecting first impurity ions at a first surface of a substrate by using a first ion implantation method to form a first impurity region, the substrate having a first conductivity type and the first impurity ions having a second conductivity type, and the first impurity region having the second conductivity type; heating the substrate with the first impurity region to activate the first impurity region to form an emitter region from the first impurity region; etching the emitter region from a surface of the emitter region to a predetermined depth to form an emitter part from the emitter region; and forming a first electrode on the emitter part to connect to the emitter part and a second electrode on a second surface of the substrate to connect to the second surface of the substrate.

Abstract translation: 讨论了太阳能电池的制造方法。 所述方法可以包括通过使用第一离子注入方法在衬底的第一表面处注入第一杂质离子以形成第一杂质区，所述衬底具有第一导电类型，并且所述第一杂质离子具有第二导电类型，并且所述第一杂质离子 具有第二导电类型的杂质区; 用所述第一杂质区域加热所述衬底以激活所述第一杂质区域以从所述第一杂质区域形成发射极区域; 将发射极区域从发射极区域的表面蚀刻到预定深度以从发射极区域形成发射极部分; 以及在所述发射极部分上形成第一电极以连接到所述发射极部分，以及在所述基板的第二表面上连接到所述基板的第二表面的第二电极。