公开(公告)号：US20200350445A1

公开(公告)日：2020-11-05

申请号：US16933363

申请日：2020-07-20

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa CHEONG ,  Yundeok YOON ,  Jaesung KIM ,  Junyong AHN

IPC: H01L31/0236 ,  H01L31/18 ,  H01L31/068

Abstract: A method of manufacturing a solar cell, includes forming a rounded uneven member having a rounded end portion at a second surface of a semiconductor substrate having a first surface and the second surface opposite to each other, forming conductive regions comprising forming a first conductive region at the first surface of the semiconductor substrate and forming a second conductive region on the second surface of the semiconductor substrate, wherein the second conductive region comprises a semiconductor layer different and separated from the semiconductor substrate and forming electrodes comprising forming a first electrode electrically connected to the first conductive region and forming a second electrode electrically connected to the second conductive region.

公开(公告)号：US20180277694A1

公开(公告)日：2018-09-27

申请号：US15995701

申请日：2018-06-01

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/0224 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/077 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/0216

CPC classification number: H01L31/022433 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50

Abstract: A solar cell can include a silicon semiconductor substrate having a first conductive type; a oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer and having the first conductive type; an emitter region at a second surface of the silicon semiconductor substrate opposite to the first surface and having a second conductive type opposite to the first conductive type; a first passivation film on the polysilicon layer; a first electrode connected to the polysilicon layer through an opening formed in the first passivation film; a second passivation film on the emitter region; and a second electrode connected to the emitter region through an opening formed in the second passivation film.

公开(公告)号：US20180315866A1

公开(公告)日：2018-11-01

申请号：US15962697

申请日：2018-04-25

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa CHEONG ,  Yundeok YOON ,  Jaesung KIM ,  Junyong AHN

IPC: H01L31/0236 ,  H01L31/18

Abstract: Disclosed is a solar cell including: a semiconductor substrate; a first conductive region formed at a first surface of the semiconductor substrate and having a first conductivity type; a second conductive region formed on a second surface of the semiconductor substrate opposite to the first surface, and having a second conductivity type opposite to the first conductivity type, wherein the second conductive region including a semiconductor layer different and separated from the semiconductor substrate; a first electrode electrically connected to the first conductive region; and a second electrode electrically connected to the second conductive region. The second surface of the semiconductor substrate has a rounded uneven member having a rounded end portion.

公开(公告)号：US20160155866A1

公开(公告)日：2016-06-02

申请号：US14953264

申请日：2015-11-27

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/0224 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/022433 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50

Abstract: Disclosed are a solar cell and a method for manufacturing the same. A solar cell includes a semiconductor substrate, a tunnel layer on the first surface of the semiconductor substrate, a first conductive type semiconductor region on the tunnel layer and includes impurities of a first conductive type, a second conductive type semiconductor region on a second surface and includes impurities of a second conductive type opposite the first conductive type, a first passivation film on the first conductive type semiconductor region, a first electrode formed on the first passivation film and connected to the first conductive type semiconductor region through an opening portion formed in the first passivation film, a second passivation film on the second conductive type semiconductor region, and a second electrode formed on the second passivation film and connected to the second conductive type semiconductor region through an opening portion formed in the second passivation film.

Abstract translation: 公开了一种太阳能电池及其制造方法。 太阳能电池包括半导体衬底，半导体衬底的第一表面上的隧道层，隧道层上的第一导电类型半导体区域，并且包括第一导电类型的杂质，第二表面上的第二导电类型半导体区域， 包括与第一导电类型相反的第二导电类型的杂质，第一导电类型半导体区域上的第一钝化膜，形成在第一钝化膜上并通过形成在第一导电类型半导体区域中的开口部分连接到第一导电类型半导体区域的第一电极 第一钝化膜，第二导电型半导体区域上的第二钝化膜，以及形成在第二钝化膜上并通过形成在第二钝化膜中的开口部分连接到第二导电型半导体区域的第二电极。

公开(公告)号：US20190319140A1

公开(公告)日：2019-10-17

申请号：US16456915

申请日：2019-06-28

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/0216

Abstract: A solar cell can include a silicon substrate; a tunnel layer disposed on a first surface of the silicon substrate, the tunnel layer including a dielectric material; a polycrystalline silicon layer disposed on the tunnel layer; a dielectric layer disposed on the polycrystalline silicon layer; and an electrode penetrating through the dielectric layer and directly contacting with the polycrystalline silicon layer, wherein the polycrystalline silicon layer includes a metal crystal region positioned at a region where the polycrystalline silicon layer contacts the electrode, and wherein the metal crystal region includes a plurality of metal crystals, the plurality of metal crystals including a metal material same as a metal material included in the electrode.

公开(公告)号：US20170222085A1

公开(公告)日：2017-08-03

申请号：US15418336

申请日：2017-01-27

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa CHEONG ,  Junyong AHN ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/18 ,  H01L31/20

CPC classification number: H01L31/1864 ,  H01L31/0216 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0236 ,  H01L31/024 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/105 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/186 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/546 ,  Y02E10/547

Abstract: A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° C. to 700° C. to anneal the silicon oxide film.

公开(公告)号：US20190326456A1

公开(公告)日：2019-10-24

申请号：US16457129

申请日：2019-06-28

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/0216

Abstract: A method for manufacturing a solar cell can include forming a tunneling layer on first and second surfaces of a semiconductor substrate, the tunneling layer including a dielectric material; forming a polycrystalline silicon layer on the tunnel layer at the first surface and on the second surface of the semiconductor substrate; removing portions of the tunnel layer and the polycrystalline silicon layer formed at the first surface of the semiconductor substrate; forming a doping region at the first surface of the semiconductor substrate by diffusing a dopant; forming a passivation layer on the polycrystalline silicon layer at the second surface of the semiconductor substrate; and forming a second electrode connected to the polycrystalline silicon layer by penetrating through the passivation layer.

公开(公告)号：US20190305171A1

公开(公告)日：2019-10-03

申请号：US16443564

申请日：2019-06-17

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa CHEONG ,  Junyong AHN ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/18 ,  H01L31/0368 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/20 ,  H01L31/105 ,  H01L31/024 ,  H01L31/0236

Abstract: A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° C. to 700° C. to anneal the silicon oxide film.

公开(公告)号：US20190148573A1

公开(公告)日：2019-05-16

申请号：US16250463

申请日：2019-01-17

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/02 ,  H01L31/0747

Abstract: A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

公开(公告)号：US20170309761A1

公开(公告)日：2017-10-26

申请号：US15643180

申请日：2017-07-06

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/0747 ,  H01L31/077

CPC classification number: H01L31/022433 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50

Abstract: A method for manufacturing a solar cell can include a tunnel layer forming step of forming a tunnel layer on a first surface of a semiconductor substrate, a first conductive type semiconductor region forming step of forming a first conductive type semiconductor region on the first surface of the semiconductor substrate, a second conductive type semiconductor region forming step of forming a second conductive type semiconductor region by doping impurities of a second conductive type into a second surface of the semiconductor substrate, a first passivation film forming step of forming a first passivation film on the first conductive type semiconductor region and an electrode forming step of forming a first electrode connected to the first conductive type semiconductor region and a second electrode connected to the second conductive type semiconductor region.