公开(公告)号：US09130112B2

公开(公告)日：2015-09-08

申请号：US13840618

申请日：2013-03-15

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa Cheong ,  Yongduk Jin ,  Youngsung Yang ,  Manhyo Ha

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0224

Abstract: A method for manufacturing a dopant layer of a solar cell according to an embodiment of the invention includes: ion-implanting a dopant to a substrate; and heat-treating for an activation of the dopant. In the heat-treating for the activation, the substrate is heat-treated at a first temperature after an anti-out-diffusion film is formed at a temperature lower than the first temperature under a first gas atmosphere.

公开(公告)号：US10256353B2

公开(公告)日：2019-04-09

申请号：US15334611

申请日：2016-10-26

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa Cheong ,  Yiyin Yu ,  Youngsung Yang ,  Yongduk Jin ,  Manhyo Ha ,  Seongeun Lee

IPC: H01L31/02 ,  H01L31/0216 ,  H01L31/0224

Abstract: A solar cell can include a substrate of a first conductive type; an emitter region which is positioned at a front surface of the substrate and has a second conductive type different from the first conductive type; a back surface field region which is positioned at a back surface opposite the front surface of the substrate; a front passivation region including a plurality of layers which are sequentially positioned on the emitter region; a back passivation region including a plurality of layers which are sequentially positioned on the back surface field region; a front electrode part which passes through the front passivation region and is connected to the emitter region, wherein the front electrode part comprises a plurality of front electrodes that are apart from each other and a front bus bar connecting the plurality of front electrodes; a back electrode part which passes through the back passivation region and is connected to the back surface field region, wherein the back electrode part comprises a plurality of back electrodes that are apart from each other and a back bus bar connecting the plurality of back electrodes, wherein the front passivation region includes a first aluminum oxide layer and the back passivation region includes a second aluminum oxide layer.

公开(公告)号：US09978888B2

公开(公告)日：2018-05-22

申请号：US15259356

申请日：2016-09-08

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung Yang ,  Yongduk Jin ,  Manhyo Ha ,  Juhwa Cheong

IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/0684 ,  H01L31/1804 ,  H01L31/186 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for manufacturing a solar cell, the method including: preparing a semiconductor substrate; ion-implanting a pre-amorphization element to form an amorphous layer at at least a part of one surface of the semiconductor substrate; ion-implanting a first conductive type dopant to the one surface of the semiconductor substrate to form a first dopant layer; and forming a first electrode electrically connected to the first dopant layer, wherein a concentration of the pre-amorphization element in one portion of the first dopant layer is different from a concentration of the pre-amorphization element in another portion of the first dopant layer.

公开(公告)号：US09935228B2

公开(公告)日：2018-04-03

申请号：US14830480

申请日：2015-08-19

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung Yang ,  Junghoon Choi ,  Chungyi Kim

IPC: H01L31/068 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0745 ,  H01L31/065 ,  H01L31/18 ,  H01L31/0747

CPC classification number: H01L31/068 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/035209 ,  H01L31/035272 ,  H01L31/03529 ,  H01L31/065 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  Y02E10/50

Abstract: A solar cell is discussed, and the solar cell includes: a semiconductor substrate; a tunneling layer on a surface of the semiconductor substrate; a buffer layer on the tunneling layer, wherein the buffer layer is a separate layer from the tunneling layer and includes an intrinsic buffer portion, and wherein at least one of a material, a composition and a crystalline structure of the buffer layer is different from those of the tunneling layer; a conductive type region on the tunneling layer, and including a first conductive type region having a first conductive type and a second conductive type region having a second conductive type; and an electrode connected to the conductive type region. The buffer layer is positioned adjacent to the tunneling layer and is apart from the electrode.

公开(公告)号：US09559220B2

公开(公告)日：2017-01-31

申请号：US14974407

申请日：2015-12-18

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa Cheong ,  Yiyin Yu ,  Youngsung Yang ,  Yongduk Jin ,  Manhyo Ha ,  Seongeun Lee

IPC: H01L31/00 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/02

CPC classification number: H01L31/02167 ,  H01L31/02008 ,  H01L31/022425 ,  H01L31/022433 ,  Y02E10/50

Abstract: A solar cell is discussed. The solar cell includes a substrate of a first conductive type, an emitter region which is positioned at a front surface of the substrate and has a second conductive type different from the first conductive type, a front passivation region including a plurality of layers which are sequentially positioned on the emitter region, a back passivation region which is positioned on a back surface opposite the front surface of the substrate and includes three layers, a plurality of front electrodes which pass through the front passivation region and are connected to the emitter region, and at least one back electrode which passes through the back passivation region and is connected to the substrate.

Abstract translation: 讨论太阳能电池。 太阳能电池包括第一导电类型的衬底，位于衬底的前表面并具有不同于第一导电类型的第二导电类型的发射极区域，包括多个层的前钝化区域，其顺序地 位于发射极区域上的背面钝化区域，其位于与衬底的前表面相对的背面上并且包括三层，多个前电极穿过前钝化区并连接到发射区，以及 至少一个背电极，其穿过背部钝化区域并连接到衬底。