公开(公告)号：US07923069B2

公开(公告)日：2011-04-12

申请号：US12860542

申请日：2010-08-20

申请人： Mei Chang ,  Lawrence C. Lei ,  Walter B. Glenn

发明人： Mei Chang ,  Lawrence C. Lei ,  Walter B. Glenn

IPC分类号： C23C16/00

CPC分类号： H01L21/67167 ,  C23C16/45512 ,  C23C16/45519 ,  C23C16/45551 ,  C23C16/45565 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/6719

摘要： A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.

摘要翻译： 一种多站沉积装置，其能够使用多个站同时处理多个基板，其中气幕将站分离。 该装置还包括支撑多个晶片并将晶片旋转到特定沉积位置的多工位台板，在该沉积位置将沉积气体供应到晶片。 沉积气体可以通过单区或多区气体分配喷嘴供应到晶片。

公开(公告)号：US6086677A

公开(公告)日：2000-07-11

申请号：US098969

申请日：1998-06-16

申请人： Salvador P. Umotoy ,  Lawrence C. Lei ,  Anh N. Nguyen ,  Steve H. Chiao

发明人： Salvador P. Umotoy ,  Lawrence C. Lei ,  Anh N. Nguyen ,  Steve H. Chiao

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/45514 ,  C23C16/45565

摘要： A faceplate for a showerhead of a semiconductor wafer processing system having a plurality of gas passageways to provide a plurality of gases to the process region without commingling those gases before they reach the process region within a reaction chamber. The showerhead contains faceplate and a gas distribution manifold assembly. The faceplate defines a plurality of first gas holes that carry a first gas from the manifold assembly through the faceplate to the process region and a plurality of channels that couple a plurality of second gas holes to a plenum that is fed the second gas from the manifold assembly.

摘要翻译： 一种用于半导体晶片处理系统的喷头的面板，具有多个气体通道，以在处理区域内的处理区域到达处理区域之前，将多种气体提供给处理区域，而不会混合这些气体。 喷头包含面板和气体分配歧管组件。 面板限定了多个第一气体孔，其将来自歧管组件的第一气体通过面板传送到处理区域，以及多个通道，其将多个第二气体孔连接到从歧管供应第二气体的气室 部件。

公开(公告)号：US5556476A

公开(公告)日：1996-09-17

申请号：US327462

申请日：1994-10-21

申请人： Lawrence C. Lei ,  Cissy Leung

发明人： Lawrence C. Lei ,  Cissy Leung

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/205 ,  H01L21/687 ,  C23C16/00 ,  B44C1/22

CPC分类号： C23C16/45521 ,  C23C16/45519 ,  C23C16/458 ,  C23C16/4583 ,  C23C16/4585 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68792 ,  Y10S438/935

摘要： A substrate processing apparatus comprising a housing defining a processing chamber for receiving a substrate therein. Inside the chamber a substrate supporting susceptor, including an upper substrate receiving portion is located. The receiving portion defines a walled pocket dimensioned to receive the substrate therein. When the substrate is so received the walls of the pocket define an annulus with the outer edge of the substrate. Typically the pocket walls are perpendicular to a primary plane of the substrate and are at least as high, and preferably twice as high, as the substrate is thick. At the outer, circumferential edge of the pocket a gas manifold is formed. The manifold is arranged so that, during processing, a gas which can be projected toward the edge of a substrate received in the pocket. This gas moves upwards between the annulus defined between the wall of the pocket and the outer edge of the substrate, thereby preventing processing gas from contacting the edge portion of the substrate.

摘要翻译： 一种基板处理装置，包括限定用于在其中接收基板的处理室的壳体。 在腔室内设有包括上基板接收部分的基板支撑基座。 接收部分限定了尺寸设计成在其中容纳衬底的壁形口袋。 当衬底如此容纳时，袋的壁限定与衬底的外边缘的环形空间。 通常，袋壁垂直于衬底的主平面，并且至少与衬底较厚一样高，优选两倍高。 在口袋的外部圆周边缘形成气体歧管。 歧管被布置成使得在处理期间可以朝向容纳在口袋中的基板的边缘突出的气体。 这种气体在限定在袋的壁和衬底的外边缘之间的环之间向上移动，从而防止处理气体接触衬底的边缘部分。

公开(公告)号：US5468298A

公开(公告)日：1995-11-21

申请号：US226907

申请日：1994-04-13

申请人： Lawrence C. Lei ,  Cissy Leung

发明人： Lawrence C. Lei ,  Cissy Leung

IPC分类号： C23C16/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45519 ,  C23C16/04 ,  C23C16/4401

摘要： A bottom purge manifold for the gas purge channel of a CVD semiconductor processing chamber provides an obstruction in the purge gas flow from a purge gas passage to the central portion of the processing chamber. The gas flow is restricted by a ring having generally equally spaced holes therethrough obstructing the purge channel opening and retained in the channel by spring loaded retaining flanges. A set of fan-shaped slots carry the purge gas from the openings and direct it towards the center portion of the processing chamber. This manifold produces a generally uniform flow from the gas purge manifold to improve the uniformity of vapor deposition on the wafer's surface.

摘要翻译： 用于CVD半导体处理室的气体吹扫通道的底部吹扫歧管提供了吹扫气体流从吹扫气体通道到处理室的中心部分的阻塞。 气流由具有大致等间隔开的孔的环限制，阻挡吹扫通道开口并通过弹簧加载的保持凸缘保持在通道中。 一组扇形槽从开口携带净化气体并将其引导到处理室的中心部分。 该歧管从气体吹扫歧管产生大致均匀的流动，以改善晶片表面上气相沉积的均匀性。

公开(公告)号：US5213650A

公开(公告)日：1993-05-25

申请号：US759319

申请日：1991-09-13

申请人： David N. Wang ,  Lawrence C. Lei ,  Mei Chang ,  Cissy Leung

发明人： David N. Wang ,  Lawrence C. Lei ,  Mei Chang ,  Cissy Leung

IPC分类号： H01L21/00 ,  H01L21/3065

CPC分类号： H01L21/67028 ,  H01L21/3065

摘要： An apparatus is disclosed for removing one or more materials deposited on the backside and end edges of a semiconductor wafer which includes means for urging the front side of the wafer against a faceplate in a vacuum chamber; means for flowing one or more gases through a space maintained between the front side of the wafer and the faceplate; and means for forming a plasma in a gap maintained between the backside of the wafer and susceptor to remove materials deposited on the backside and end edge of the wafer; the gas flowing through the space between the front side of the wafer and the faceplate acting to prevent the plasma from removing materials on the front side of the wafer. In a preferred embodiment, the front side of the wafer is spaced from the faceplate by providing a generally circular recess in the faceplate having a depth corresponding to the desired spacing and having a diameter larger than the diameter of the wafer with spacing means in the recessed area to engage portions of the wafer to permit gas to flow through the recess and around the end edge of the wafer to inhibit removal of materials from the front surface of the wafer by the plasma.

摘要翻译： 公开了一种用于去除沉积在半导体晶片的背侧和端边缘上的一种或多种材料的装置，其包括用于将晶片的前侧抵靠真空室中的面板推动的装置; 用于使一种或多种气体流过保持在晶片的前侧和面板之间的空间的装置; 以及用于在保持在晶片的背面和基座之间的间隙中形成等离子体以去除沉积在晶片的背侧和端边缘上的材料的装置; 流过晶片前侧和面板之间的空间的气体用于防止等离子体去除晶片前侧上的材料。 在优选实施例中，晶片的前侧通过在面板中设置大致圆形的凹槽而与面板间隔开，该凹槽具有对应于期望间隔的深度，并且具有大于具有间隔装置的凹槽中晶片直径的直径 区域以接合晶片的部分，以允许气体流过凹槽并围绕晶片的端边缘，以阻止通过等离子体从晶片的前表面去除材料。

公开(公告)号：US20100316800A1

公开(公告)日：2010-12-16

申请号：US12860542

申请日：2010-08-20

申请人： Mei Chang ,  Lawrence C. Lei ,  Walter B. Glenn

发明人： Mei Chang ,  Lawrence C. Lei ,  Walter B. Glenn

IPC分类号： C23C16/22 ,  C23C16/00 ,  C23C16/44 ,  C23C16/458 ,  C23C16/52

CPC分类号： H01L21/67167 ,  C23C16/45512 ,  C23C16/45519 ,  C23C16/45551 ,  C23C16/45565 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/6719

摘要： A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.

摘要翻译： 一种多站沉积装置，其能够使用多个站同时处理多个基板，其中气幕将站分离。 该装置还包括支撑多个晶片并将晶片旋转到特定沉积位置的多工位台板，在该沉积位置将沉积气体供应到晶片。 沉积气体可以通过单区或多区气体分配喷嘴供应到晶片。

公开(公告)号：US07777483B2

公开(公告)日：2010-08-17

申请号：US12099747

申请日：2008-04-08

申请人： Lawrence C. Lei ,  Siqing Lu ,  Yu Chang ,  Cecilia Martner ,  Quyen Pham ,  Yu Ping Gu ,  Joel Huston ,  Paul Smith ,  Gabriel Lorimer Miller

发明人： Lawrence C. Lei ,  Siqing Lu ,  Yu Chang ,  Cecilia Martner ,  Quyen Pham ,  Yu Ping Gu ,  Joel Huston ,  Paul Smith ,  Gabriel Lorimer Miller

IPC分类号： G01B7/06 ,  G01N27/72

CPC分类号： G01B7/105

摘要： A method and apparatus are provided for measuring the thickness of a test object. The apparatus includes an eddy current sensor having first and second sensor heads. The sensor heads are positioned to have a predetermined gap therebetween for passage by at least a portion of the test object through the gap. The sensor heads make measurements at given sampling locations on the test object as the test object is moved through the gap. The apparatus also includes a position sensing mechanism to determine positions of the sampling locations on the test object. The apparatus also includes an evaluation circuit in communication with the eddy current sensor and to the position sensing mechanism for determining the thickness of the test object at the sampling locations.

摘要翻译： 提供了一种用于测量被测物体的厚度的方法和装置。 该装置包括具有第一和第二传感器头的涡流传感器。 传感器头被定位成在其间具有预定的间隙，以通过该测试对象的至少一部分通过间隙。 当测试对象移动通过间隙时，传感器头在测试对象上的给定采样位置进行测量。 该装置还包括位置检测机构，用于确定测试对象上的采样位置的位置。 该装置还包括与涡流传感器和位置感测机构通信的评估电路，用于确定采样位置处的测试对象的厚度。

公开(公告)号：US07547465B2

公开(公告)日：2009-06-16

申请号：US11198140

申请日：2005-08-05

申请人： Mei Chang ,  Lawrence C. Lei ,  Walter B. Glenn

发明人： Mei Chang ,  Lawrence C. Lei ,  Walter B. Glenn

IPC分类号： C23C16/00

CPC分类号： H01L21/67167 ,  C23C16/45512 ,  C23C16/45519 ,  C23C16/45551 ,  C23C16/45565 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/6719

摘要： A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.

摘要翻译： 一种多站沉积装置，其能够使用多个站同时处理多个基板，其中气幕将站分离。 该装置还包括支撑多个晶片并将晶片旋转到特定沉积位置的多工位台板，在该沉积位置将沉积气体供应到晶片。 沉积气体可以通过单区或多区气体分配喷嘴供应到晶片。

公开(公告)号：US06932871B2

公开(公告)日：2005-08-23

申请号：US10124309

申请日：2002-04-16

申请人： Mei Chang ,  Lawrence C. Lei ,  Walter B. Glenn

发明人： Mei Chang ,  Lawrence C. Lei ,  Walter B. Glenn

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54 ,  H01L21/00 ,  C23C14/24

CPC分类号： H01L21/67167 ,  C23C16/45512 ,  C23C16/45519 ,  C23C16/45551 ,  C23C16/45565 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/6719

摘要： A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.

摘要翻译： 一种多站沉积装置，其能够使用多个站同时处理多个基板，其中气幕将站分离。 该装置还包括支撑多个晶片并将晶片旋转到特定沉积位置的多工位台板，在该沉积位置将沉积气体供应到晶片。 沉积气体可以通过单区或多区气体分配喷嘴供应到晶片。

公开(公告)号：US06375748B1

公开(公告)日：2002-04-23

申请号：US09387928

申请日：1999-09-01

申请人： Joseph Yudovsky ,  Tom Madar ,  Salvador Umotoy ,  Son Ngoc Trinh ,  Lawrence C. Lei ,  Anzhong (Andrew) Chang ,  Xiaoxiong (John) Yuan

发明人： Joseph Yudovsky ,  Tom Madar ,  Salvador Umotoy ,  Son Ngoc Trinh ,  Lawrence C. Lei ,  Anzhong (Andrew) Chang ,  Xiaoxiong (John) Yuan

IPC分类号： C23C1600

CPC分类号： H01L21/68735 ,  H01L21/68785

摘要： A substrate support having a removable edge ring, which is made of a material having a lower coefficient of thermal expansion (CTE), than that of the substrate support is provided. The edge ring and the substrate support are configured for pin and slot coupling. Specifically, either the edge ring, or the substrate support comprises a plurality of pins, and the other of the edge ring or the substrate support comprises a plurality of hollow regions or slots in which the pins may be inserted. The slots are at least as wide as a corresponding one of the plurality of pins and extend in the direction in which the substrate support expands and contracts during thermal cycling. Each of the slots extends a length which is sufficient to compensate for the difference between the CTE of the substrate support and the CTE of the edge ring, over the range of process temperatures to which the apparatus is exposed. Preferably the susceptor is made of aluminum, and the edge ring is made of ceramic. A restrictor gap may be defined between a surface of the substrate support and a surface of the purge ring so as to restrict a volume of purge gas flowing to an edge of a substrate positioned on the substrate support. The purge gas delivery channel may have an exposed outlet and may be upwardly angled to facilitate cleaning.

摘要翻译： 提供了一种具有可移除的边缘环的衬底支撑件，其由具有比衬底支撑件的热膨胀系数（CTE）低的材料制成。 边缘环和基板支撑件配置为销和槽联接。 具体来说，边缘环或衬底支撑件包括多个销，并且边缘环或衬底支撑件中的另一个包括可以插入销的多个中空区域或狭槽。 所述槽至少与所述多个销中相应的销一样宽，并且在所述基板支撑件在热循环期间膨胀和收缩的方向上延伸。 每个狭槽的长度足以补偿基板支撑件的CTE与边缘环的CTE之间的差异，在该设备暴露于该处理温度的范围内。 优选地，基座由铝制成，并且边缘环由陶瓷制成。 限定器间隙可以限定在衬底支撑件的表面和净化环的表面之间，以便限制流过位于衬底支撑件上的衬底的边缘的吹扫气体的体积。 净化气体输送通道可以具有暴露的出口并且可以向上成角度以便于清洁。