Adiabatic reflection Y-coupler apparatus
    11.
    再颁专利
    Adiabatic reflection Y-coupler apparatus 失效
    绝热反射式Y型耦合器

    公开(公告)号:USRE35516E

    公开(公告)日:1997-05-20

    申请号:US452806

    申请日:1995-05-30

    摘要: A wavelength selective structure is coupled to an adiabatic Y-coupler via a multimode section which supports both symmetric and antisymmetric modes. One single mode branch of the coupler converts guided light to a symmetric mode, whereas the other single mode branch converts guided light to an anti-symmetric mode. The structure, which includes a pair of single mode waveguide arms coupled to the common section and a reflection device (such as a grating or ROR) located in each arm, converts reflected light from a symmetric mode to an anti-symmetric mode and conversely. Applications described include a channel dropping fiber and channel balancing apparatus for WDM systems, and a dispersion compensator for fiber optic systems.

    摘要翻译: 波长选择结构通过支持对称和反对称模式的多模部分耦合到绝热Y耦合器。 耦合器的一个单模分支将引导光转换为对称模式,而另一个单模分支将引导光转换为反对称模式。 该结构包括耦合到公共部分的一对单模波导臂和位于每个臂中的反射装置(例如光栅或ROR),将来自对称模式的反射光转换成反对称模式,反之亦然。 所描述的应用包括用于WDM系统的信道丢弃光纤和信道平衡装置,以及用于光纤系统的色散补偿器。

    Hybrid optical isolator, circulator or switch, and systems utilizing same
    12.
    发明授权
    Hybrid optical isolator, circulator or switch, and systems utilizing same 失效
    混合光隔离器,循环器或开关,以及利用其的系统

    公开(公告)号:US4978189A

    公开(公告)日:1990-12-18

    申请号:US436169

    申请日:1989-11-14

    摘要: An optical circulator/isolator is implemented in a semiconductor package formed by a semiconductor substrate, which supports integral thin film waveguide polarization splitters and combiners, and a semiconductor lid, which supports four spherical lenses and a polarization rotator. The latter is a composite of at least two adjacent slabs of optically active material, one slab serving as a nonreciprocal 45.degree. rotator (e.g., a Faraday rotator) and the other as a reciprocal 45.degree. rotator (e.g., half-wave device). The lenses, serving both as beam expanders/condensers and as collimators, are positioned between the waveguide ends and major surfaces of the composite slab. When used with means for reversing the direction of the magnetic field in the nonreciprocal rotator, the device functions also as a switch. Also described are system architectures made possible by these devices; e.g., a single-fiber LAN having a ring architecture for non-interfering counter flow of information and a single fiber, bidirectional FTTH system for handling CATV and POTS.

    Quantized Hall effect switching devices
    15.
    发明授权
    Quantized Hall effect switching devices 失效
    量化霍尔效应开关器件

    公开(公告)号:US4488164A

    公开(公告)日:1984-12-11

    申请号:US387227

    申请日:1982-06-10

    摘要: A switching element (e.g., 30) is furnished by an inversion layer (e.g., 55) in a zero resistance state under the influence of a quantizing magnetic field, the inversion layer having a ring geometry. Voltage (e.g., V.sub.o) applied across a pair of localized spaced apart terminals (e.g., 37, 38)--one on a portion of the inner edge of the ring, the other on the outer edge--produces a percolating current in the inversion layer, that is, a current circulating around the ring in a zero resistance state. This percolating current suddenly vanishes when a control voltage is applied to an auxiliary (gate) electrode (e.g., 51), whereby an output voltage (e.g., V.sub.out) previously developed across another pair of localized spaced apart terminals (e.g., 47, 48) on either edge of the ring suddenly also vanishes.

    摘要翻译: 在量化磁场的影响下,通过反电阻(例如55)在零电阻状态下提供开关元件(例如30),该反转层具有环形几何形状。 施加在一对局部间隔开的端子(例如,37,38)上的电压(例如,Vo) - 在环的内边缘的一部分上,另一个在外边缘上,在反转层中产生渗透电流 即在零电阻状态下在环周围循环的电流。 当控制电压施加到辅助(栅极)电极(例如51)时,渗透电流突然消失,由此先前在另一对局部间隔开的端子(例如,47,48)上形成的输出电压(例如,Vout) 在环的任一边突然也消失。

    Article comprising a quantum well laser
    17.
    发明授权
    Article comprising a quantum well laser 失效
    文章包括量子阱激光器

    公开(公告)号:US5448585A

    公开(公告)日:1995-09-05

    申请号:US267727

    申请日:1994-06-29

    摘要: The quantum well lasers according to the invention comprise an electron stopper layer that provides a barrier for the flow of electrons from the active region to the p-side waveguide and cladding layers and in preferred embodiments also comprise a hole stopper layer that provides a barrier for the flow of holes from the active region to the n-side waveguide and cladding layers. An exemplary InP-based laser according to the invention comprises AlInGaAs quantum well layers and barrier layers, and an AlInAs electron stopper layer and an InP hole stopper layer. Lasers according to the invention can have relatively low temperature dependence of, e.g., threshold current and/or external quantum efficiency, and may be advantageously incorporated in, e.g., optical fiber communication systems.

    摘要翻译: 根据本发明的量子阱激光器包括电子阻挡层,其提供用于从有源区域到p侧波导和包层的电子流动的阻挡层,并且在优选实施例中还包括阻挡层,该阻挡层为 孔从有源区流向n侧波导和包层。 根据本发明的示例性InP基激光器包括AlInGaAs量子阱层和阻挡层,以及AlInAs电子阻挡层和InP孔阻挡层。 根据本发明的激光器可以具有例如阈值电流和/或外部量子效率的相对低的温度依赖性,并且可以有利地结合在例如光纤通信系统中。