摘要:
A wavelength selective structure is coupled to an adiabatic Y-coupler via a multimode section which supports both symmetric and antisymmetric modes. One single mode branch of the coupler converts guided light to a symmetric mode, whereas the other single mode branch converts guided light to an anti-symmetric mode. The structure, which includes a pair of single mode waveguide arms coupled to the common section and a reflection device (such as a grating or ROR) located in each arm, converts reflected light from a symmetric mode to an anti-symmetric mode and conversely. Applications described include a channel dropping fiber and channel balancing apparatus for WDM systems, and a dispersion compensator for fiber optic systems.
摘要:
An optical circulator/isolator is implemented in a semiconductor package formed by a semiconductor substrate, which supports integral thin film waveguide polarization splitters and combiners, and a semiconductor lid, which supports four spherical lenses and a polarization rotator. The latter is a composite of at least two adjacent slabs of optically active material, one slab serving as a nonreciprocal 45.degree. rotator (e.g., a Faraday rotator) and the other as a reciprocal 45.degree. rotator (e.g., half-wave device). The lenses, serving both as beam expanders/condensers and as collimators, are positioned between the waveguide ends and major surfaces of the composite slab. When used with means for reversing the direction of the magnetic field in the nonreciprocal rotator, the device functions also as a switch. Also described are system architectures made possible by these devices; e.g., a single-fiber LAN having a ring architecture for non-interfering counter flow of information and a single fiber, bidirectional FTTH system for handling CATV and POTS.
摘要:
In the interest of ease of manufacture, hybrid lasers of distributed-Bragg-reflector type are preferred for use as light sources in optical communications. Such lasers are made to operate away from mode instabilities by adjusting a laser parameter such as, e.g., laser temperature, thereby assuring highly error-free transmission. Alternatively, by suitable design of the Bragg reflector it is possible to render mode instability of negligible influence on error rate.
摘要:
Highly frequency-selective reflectivity is realized in an optical device including a waveguide and an evanescent-field coupled grating resonator cavity. The device may include a light source and serve as a low-chirp, narrow-linewidth communications laser for use, e.g., for transmission over a fiber having non-negligible dispersion and also in wavelength-multiplexed coherent systems.
摘要:
A switching element (e.g., 30) is furnished by an inversion layer (e.g., 55) in a zero resistance state under the influence of a quantizing magnetic field, the inversion layer having a ring geometry. Voltage (e.g., V.sub.o) applied across a pair of localized spaced apart terminals (e.g., 37, 38)--one on a portion of the inner edge of the ring, the other on the outer edge--produces a percolating current in the inversion layer, that is, a current circulating around the ring in a zero resistance state. This percolating current suddenly vanishes when a control voltage is applied to an auxiliary (gate) electrode (e.g., 51), whereby an output voltage (e.g., V.sub.out) previously developed across another pair of localized spaced apart terminals (e.g., 47, 48) on either edge of the ring suddenly also vanishes.
摘要:
In optical apparatus for reading, writing or erasing optical disks, the optical head is implemented in integrated form. Silicon optical bench technology, including integrated optical waveguides, Y-splitters and directional couplers, is used in the design of the tracking, lens focussing, and read/write/erase functions.
摘要:
The quantum well lasers according to the invention comprise an electron stopper layer that provides a barrier for the flow of electrons from the active region to the p-side waveguide and cladding layers and in preferred embodiments also comprise a hole stopper layer that provides a barrier for the flow of holes from the active region to the n-side waveguide and cladding layers. An exemplary InP-based laser according to the invention comprises AlInGaAs quantum well layers and barrier layers, and an AlInAs electron stopper layer and an InP hole stopper layer. Lasers according to the invention can have relatively low temperature dependence of, e.g., threshold current and/or external quantum efficiency, and may be advantageously incorporated in, e.g., optical fiber communication systems.