公开(公告)号：US20130260529A1

公开(公告)日：2013-10-03

申请号：US13903267

申请日：2013-05-28

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chun-I Hsieh ,  Chris Carlson

IPC: H01L49/02

CPC classification number: H01L27/10855 ,  H01G4/20 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/02244 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

Abstract: Methods of forming a capacitor including forming at least one aperture in a support material, forming a titanium nitride material within the at least one aperture, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The support material may then be removed and the titanium nitride material may be oxidized to form a titanium dioxide material. A second conductive material may then be formed over an outer surface of the titanium dioxide material.

Abstract translation: 形成电容器的方法包括在支撑材料中形成至少一个孔，在所述至少一个孔内形成氮化钛材料，在所述氮化钛材料的所述至少一个孔内形成钌材料，以及形成第一导电材料 在该至少一个孔内的钌材料上。 然后可以移除支撑材料，并且氮化钛材料可被氧化以形成二氧化钛材料。 然后可以在二氧化钛材料的外表面上形成第二导电材料。

公开(公告)号：US20190267383A1

公开(公告)日：2019-08-29

申请号：US15903964

申请日：2018-02-23

Applicant: Micron Technology, Inc.

Inventor： Matthew N. Rocklein ,  Paul A. Paduano ,  Sanket S. Kelkar ,  Christopher W. Petz ,  Zhe Song ,  Vassil Antonov ,  Qian Tao

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/285

Abstract: A DRAM capacitor comprising a first capacitor electrode configured as a container and comprising a doped titanium nitride material, a capacitor dielectric on the first capacitor electrode, and a second capacitor electrode on the capacitor dielectric. Methods of forming the DRAM capacitor are also disclosed, as are semiconductor devices and systems comprising such DRAM capacitors.

公开(公告)号：US09466660B2

公开(公告)日：2016-10-11

申请号：US14055620

申请日：2013-10-16

Applicant: Micron Technology, Inc.

Inventor： Matthew N. Rocklein ,  Kotha Sai Madhukar Reddy ,  Vassil Antonov ,  Vishwanath Bhat

IPC: H01L29/12 ,  H01L49/02

CPC classification number: H01L28/60 ,  H01L28/40

Abstract: A semiconductor structure may include a first electrode over a substrate, a high-K dielectric material over the first electrode, and a second electrode over the high-K dielectric material, wherein at least one of the first electrode and the second electrode may include a material selected from the group consisting of a molybdenum nitride (MoaNb) material, a molybdenum oxynitride (MoOxNy) material, a molybdenum oxide (MoOx) material, and a molybdenum-based alloy material comprising molybdenum and nitrogen.

Abstract translation: 半导体结构可以包括在衬底上的第一电极，在第一电极上方的高K电介质材料和在高K电介质材料上的第二电极，其中第一电极和第二电极中的至少一个可以包括 选自氮化钼（MoaNb）材料，氮氧化钼（MoOxNy）材料，氧化钼（MoOx））材料和包含钼和氮的钼基合金材料的材料。

公开(公告)号：US08900992B2

公开(公告)日：2014-12-02

申请号：US13950583

申请日：2013-07-25

Applicant: Micron Technology, Inc.

Inventor： Vishwanath Bhat ,  Dan Gealy ,  Vassil Antonov

IPC: H01L21/44

CPC classification number: H01L28/40 ,  C23C16/029 ,  C23C16/18 ,  H01G4/085 ,  H01G4/1209 ,  H01L27/10852 ,  H01L28/65 ,  H01L28/75

Abstract: Methods for forming ruthenium films and semiconductor devices, such as capacitors, that include the films are provided.

Abstract translation: 提供了形成钌膜的方法和包括膜的诸如电容器的半导体器件。

公开(公告)号：US20140210049A1

公开(公告)日：2014-07-31

申请号：US14244451

申请日：2014-04-03

Applicant: Micron Technology, Inc.

Inventor： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chun-I Hsieh ,  Chris Carlson

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L27/10855 ,  H01G4/20 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/02244 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

Abstract: Methods of forming a capacitor including forming a titanium nitride material within at least one aperture defined by a support material, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The titanium nitride material may be oxidized to a titanium dioxide material. A second conductive material may be formed over a surface of the titanium dioxide material. A semiconductor device may include at least one capacitor, wherein a major longitudinal portion of the at least one capacitor is not surrounded by a solid material. The capacitor may include a first electrode; a ruthenium oxide material laterally adjacent the first electrode; a rutile titanium dioxide material laterally adjacent the ruthenium oxide material; and a second electrode laterally adjacent the rutile titanium dioxide material.

Abstract translation: 形成电容器的方法包括在由支撑材料限定的至少一个孔内形成氮化钛材料，在所述氮化钛材料的所述至少一个孔内形成钌材料，以及在所述钌材料的上方形成第一导电材料 至少一个孔。 氮化钛材料可被氧化成二氧化钛材料。 可以在二氧化钛材料的表面上形成第二导电材料。 半导体器件可以包括至少一个电容器，其中至少一个电容器的主要纵向部分不被固体材料包围。 电容器可以包括第一电极; 横向邻近第一电极的氧化钌材料; 横向邻近氧化钌材料的金红石型二氧化钛材料; 和与金红石二氧化钛材料横向相邻的第二电极。

公开(公告)号：US08748283B2

公开(公告)日：2014-06-10

申请号：US13903267

申请日：2013-05-28

Applicant: Micron Technology, Inc.

Inventor： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chun-I Hsieh ,  Chris Carlson

IPC: H01L21/20

CPC classification number: H01L27/10855 ,  H01G4/20 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/02244 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

Abstract: Methods of forming a capacitor including forming at least one aperture in a support material, forming a titanium nitride material within the at least one aperture, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The support material may then be removed and the titanium nitride material may be oxidized to form a titanium dioxide material. A second conductive material may then be formed over an outer surface of the titanium dioxide material.

Abstract translation: 形成电容器的方法包括在支撑材料中形成至少一个孔，在所述至少一个孔内形成氮化钛材料，在所述氮化钛材料的所述至少一个孔内形成钌材料，以及形成第一导电材料 在该至少一个孔内的钌材料上。 然后可以移除支撑材料，并且氮化钛材料可被氧化以形成二氧化钛材料。 然后可以在二氧化钛材料的外表面上形成第二导电材料。