公开(公告)号：US08927441B2

公开(公告)日：2015-01-06

申请号：US14079173

申请日：2013-11-13

Applicant: Micron Technology, Inc.

Inventor： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chris Carlson

IPC: H01L21/31 ,  H01L21/02 ,  H01L21/321 ,  H01L49/02 ,  H01L27/108

CPC classification number: H01L27/108 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/321 ,  H01L28/40

Abstract: Methods of forming rutile titanium dioxide comprise exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to an atmosphere consisting of oxygen gas (O2) to produce an oxidized transition metal over an unoxidized portion of the transition metal. Rutile titanium dioxide is formed over the oxidized transition metal by atomic layer deposition. The oxidized transition metal is sequentially exposed to a titanium halide precursor and an oxidizer. Other methods include oxidizing a portion of a ruthenium material to ruthenium(IV) oxide using an atmosphere consisting of O2, nitric oxide (NO), or nitrous oxide (N2O); and introducing a gaseous titanium halide precursor and water vapor to the ruthenium(IV) oxide to form rutile titanium dioxide on the ruthenium(IV) oxide by atomic layer deposition. Some methods include exposing transition metal to an atmosphere consisting essentially of O2, NO, and N2O.

Abstract translation: 形成金红石型二氧化钛的方法包括将过氧化物（例如V，Cr，W，Mn，Ru，Os，Rh，Ir，Pt，Ge，Sn或Pb）暴露于由氧气（O 2） 在过渡金属的未氧化部分上产生氧化过渡金属。 通过原子层沉积在氧化过渡金属上形成金红石二氧化钛。 氧化过渡金属依次暴露于卤化钛前体和氧化剂。 其它方法包括使用由O 2，一氧化氮（NO）或一氧化二氮（N 2 O）组成的气氛将氧化钌材料的一部分氧化成氧化钌（Ⅳ）; 并将气态卤化钛前体和水蒸气引入氧化钌（IV）中，以通过原子层沉积在氧化钌（IV）上形成金红石型二氧化钛。 一些方法包括将过渡金属暴露于基本上由O 2，NO和N 2 O组成的气氛中。

公开(公告)号：US20140065301A1

公开(公告)日：2014-03-06

申请号：US14079173

申请日：2013-11-13

Applicant: Micron Technology, Inc.

Inventor： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chris Carlson

IPC: H01L27/108

CPC classification number: H01L27/108 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/321 ,  H01L28/40

Abstract: Methods of forming rutile titanium dioxide comprise exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to an atmosphere consisting of oxygen gas (O2) to produce an oxidized transition metal over an unoxidized portion of the transition metal. Rutile titanium dioxide is formed over the oxidized transition metal by atomic layer deposition. The oxidized transition metal is sequentially exposed to a titanium halide precursor and an oxidizer. Other methods include oxidizing a portion of a ruthenium material to ruthenium(IV) oxide using an atmosphere consisting of O2, nitric oxide (NO), or nitrous oxide (N2O); and introducing a gaseous titanium halide precursor and water vapor to the ruthenium(IV) oxide to form rutile titanium dioxide on the ruthenium(IV) oxide by atomic layer deposition. Some methods include exposing transition metal to an atmosphere consisting essentially of O2, NO, and N2O.

Abstract translation: 形成金红石型二氧化钛的方法包括将过氧化物（例如V，Cr，W，Mn，Ru，Os，Rh，Ir，Pt，Ge，Sn或Pb）暴露于由氧气（O 2） 在过渡金属的未氧化部分上产生氧化过渡金属。 通过原子层沉积在氧化过渡金属上形成金红石二氧化钛。 氧化过渡金属依次暴露于卤化钛前体和氧化剂。 其他方法包括使用由O 2，一氧化氮（NO）或一氧化二氮（N 2 O）组成的气氛将氧化钌材料的一部分氧化成氧化钌（IV）。 并将气态卤化钛前体和水蒸气引入氧化钌（IV）中，以通过原子层沉积在氧化钌（IV）上形成金红石型二氧化钛。 一些方法包括将过渡金属暴露于基本上由O 2，NO和N 2 O组成的气氛中。

公开(公告)号：US20130316153A1

公开(公告)日：2013-11-28

申请号：US13956211

申请日：2013-07-31

Applicant: Micron Technology, Inc.

Inventor： Nik Mirin ,  Tsai-Yu Huang ,  Vishwanath Bhat ,  Chris M. Carlson ,  Vassil N. Antonov

IPC: C01G23/04 ,  H05K1/02 ,  H01L23/373

CPC classification number: H01L21/02186 ,  C01G23/04 ,  C23C16/405 ,  C23C16/45534 ,  H01G4/085 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02233 ,  H01L21/02244 ,  H01L21/28556 ,  H01L21/32051 ,  H01L23/367 ,  H01L23/3735 ,  H01L23/3736 ,  H01L27/10808 ,  H01L27/1085 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/60 ,  H01L2924/0002 ,  H05K1/0203 ,  Y10T428/24802 ,  Y10T428/24975 ,  H01L2924/00

Abstract: Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.

Abstract translation: 一些实施方案包括形成金红石型氧化钛的方法。 可以形成单层的氮化钛。 然后氮化钛单层可以在小于或等于约550℃的温度下被氧化，以将其转化为金红石型氧化钛的单层。 一些实施方案包括形成具有金红石型氧化钛电介质的电容器并且具有至少一个包含氮化钛的电极的方法。 一些实施方案包括含有氮化钛和金红石型氧化钛的导热叠层，并且一些实施方案包括形成这种叠层的方法。

公开(公告)号：US09159731B2

公开(公告)日：2015-10-13

申请号：US14562298

申请日：2014-12-05

Applicant: Micron Technology, Inc.

Inventor： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chun-I Hsieh ,  Chris Carlson

IPC: H01L21/20 ,  H01L27/108 ,  H01G4/20 ,  H01L49/02 ,  H01L21/02

CPC classification number: H01L27/10855 ,  H01G4/20 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/02244 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

Abstract: Methods of forming a capacitor including forming a titanium nitride material within at least one aperture defined by a support material, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The titanium nitride material may be oxidized to a titanium dioxide material. A second conductive material may be formed over a surface of the titanium dioxide material. A semiconductor device may include at least one capacitor, wherein a major longitudinal portion of the at least one capacitor is not surrounded by a solid material. The capacitor may include a first electrode; a ruthenium oxide material laterally adjacent the first electrode; a rutile titanium dioxide material laterally adjacent the ruthenium oxide material; and a second electrode laterally adjacent the rutile titanium dioxide material.

Abstract translation: 形成电容器的方法包括在由支撑材料限定的至少一个孔内形成氮化钛材料，在所述氮化钛材料的所述至少一个孔内形成钌材料，以及在所述钌材料的上方形成第一导电材料 至少一个孔。 氮化钛材料可被氧化成二氧化钛材料。 可以在二氧化钛材料的表面上形成第二导电材料。 半导体器件可以包括至少一个电容器，其中至少一个电容器的主要纵向部分不被固体材料包围。 电容器可以包括第一电极; 横向邻近第一电极的氧化钌材料; 横向邻近氧化钌材料的金红石型二氧化钛材料; 和与金红石二氧化钛材料横向相邻的第二电极。

公开(公告)号：US20130260529A1

公开(公告)日：2013-10-03

申请号：US13903267

申请日：2013-05-28

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chun-I Hsieh ,  Chris Carlson

IPC: H01L49/02

CPC classification number: H01L27/10855 ,  H01G4/20 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/02244 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

Abstract: Methods of forming a capacitor including forming at least one aperture in a support material, forming a titanium nitride material within the at least one aperture, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The support material may then be removed and the titanium nitride material may be oxidized to form a titanium dioxide material. A second conductive material may then be formed over an outer surface of the titanium dioxide material.

Abstract translation: 形成电容器的方法包括在支撑材料中形成至少一个孔，在所述至少一个孔内形成氮化钛材料，在所述氮化钛材料的所述至少一个孔内形成钌材料，以及形成第一导电材料 在该至少一个孔内的钌材料上。 然后可以移除支撑材料，并且氮化钛材料可被氧化以形成二氧化钛材料。 然后可以在二氧化钛材料的外表面上形成第二导电材料。

公开(公告)号：US20150093874A1

公开(公告)日：2015-04-02

申请号：US14562298

申请日：2014-12-05

Applicant: Micron Technology, Inc.

Inventor： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chun-I Hsieh ,  Chris Carlson

IPC: H01L27/108 ,  H01L21/02 ,  H01L49/02

CPC classification number: H01L27/10855 ,  H01G4/20 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/02244 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

Abstract: Methods of forming a capacitor including forming a titanium nitride material within at least one aperture defined by a support material, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The titanium nitride material may be oxidized to a titanium dioxide material. A second conductive material may be formed over a surface of the titanium dioxide material. A semiconductor device may include at least one capacitor, wherein a major longitudinal portion of the at least one capacitor is not surrounded by a solid material. The capacitor may include a first electrode; a ruthenium oxide material laterally adjacent the first electrode; a rutile titanium dioxide material laterally adjacent the ruthenium oxide material; and a second electrode laterally adjacent the rutile titanium dioxide material.

Abstract translation: 形成电容器的方法包括在由支撑材料限定的至少一个孔内形成氮化钛材料，在所述氮化钛材料的所述至少一个孔内形成钌材料，以及在所述钌材料的上方形成第一导电材料 至少一个孔。 氮化钛材料可被氧化成二氧化钛材料。 可以在二氧化钛材料的表面上形成第二导电材料。 半导体器件可以包括至少一个电容器，其中至少一个电容器的主要纵向部分不被固体材料包围。 电容器可以包括第一电极; 横向邻近第一电极的氧化钌材料; 横向邻近氧化钌材料的金红石型二氧化钛材料; 和与金红石二氧化钛材料横向相邻的第二电极。

公开(公告)号：US08936991B2

公开(公告)日：2015-01-20

申请号：US14244451

申请日：2014-04-03

Applicant: Micron Technology, Inc.

Inventor： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chun-I Hsieh ,  Chris Carlson

IPC: H01L49/02 ,  H01L27/108 ,  H01G4/20

CPC classification number: H01L27/10855 ,  H01G4/20 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/02244 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

Abstract: Methods of forming a capacitor including forming a titanium nitride material within at least one aperture defined by a support material, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The titanium nitride material may be oxidized to a titanium dioxide material. A second conductive material may be formed over a surface of the titanium dioxide material. A semiconductor device may include at least one capacitor, wherein a major longitudinal portion of the at least one capacitor is not surrounded by a solid material. The capacitor may include a first electrode; a ruthenium oxide material laterally adjacent the first electrode; a rutile titanium dioxide material laterally adjacent the ruthenium oxide material; and a second electrode laterally adjacent the rutile titanium dioxide material.

公开(公告)号：US10008381B2

公开(公告)日：2018-06-26

申请号：US14929070

申请日：2015-10-30

Applicant: Micron Technology, Inc.

Inventor： Nik Mirin ,  Tsai-Yu Huang ,  Vishwanath Bhat ,  Chris M. Carlson ,  Vassil N. Antonov

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01G4/08 ,  H01G4/12 ,  H01G4/33 ,  H01L27/108 ,  H01L49/02 ,  C01G23/04 ,  H01L23/373 ,  H05K1/02 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/367

CPC classification number: H01L21/02186 ,  C01G23/04 ,  C23C16/405 ,  C23C16/45534 ,  H01G4/085 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02233 ,  H01L21/02244 ,  H01L21/28556 ,  H01L21/32051 ,  H01L23/367 ,  H01L23/3735 ,  H01L23/3736 ,  H01L27/10808 ,  H01L27/1085 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/60 ,  H01L2924/0002 ,  H05K1/0203 ,  Y02P20/129 ,  Y10T428/24802 ,  Y10T428/24975 ,  H01L2924/00

Abstract: Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.

公开(公告)号：US20160056038A1

公开(公告)日：2016-02-25

申请号：US14929070

申请日：2015-10-30

Applicant: Micron Technology, Inc.

Inventor： Nik Mirin ,  Tsai-Yu Huang ,  Vishwanath Bhat ,  Chris M. Carlson ,  Vassil N. Antonov

IPC: H01L21/02 ,  H01L23/367 ,  H01L49/02 ,  H01L21/3205 ,  H01L27/108 ,  H01L23/373 ,  H01L21/285

CPC classification number: H01L21/02186 ,  C01G23/04 ,  C23C16/405 ,  C23C16/45534 ,  H01G4/085 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02233 ,  H01L21/02244 ,  H01L21/28556 ,  H01L21/32051 ,  H01L23/367 ,  H01L23/3735 ,  H01L23/3736 ,  H01L27/10808 ,  H01L27/1085 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/60 ,  H01L2924/0002 ,  H05K1/0203 ,  Y10T428/24802 ,  Y10T428/24975 ,  H01L2924/00

Abstract: Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.

Abstract translation: 一些实施方案包括形成金红石型氧化钛的方法。 可以形成单层的氮化钛。 氮化钛单层然后可以在小于或等于约550℃的温度下被氧化，以将其转化为金红石型氧化钛的单层。 一些实施方案包括形成具有金红石型氧化钛电介质的电容器并且具有至少一个包含氮化钛的电极的方法。 一些实施方案包括含有氮化钛和金红石型氧化钛的导热叠层，并且一些实施方案包括形成这种叠层的方法。

公开(公告)号：US09209013B2

公开(公告)日：2015-12-08

申请号：US13956211

申请日：2013-07-31

Applicant: Micron Technology, Inc.

Inventor： Nik Mirin ,  Tsai-Yu Huang ,  Vishwanath Bhat ,  Chris M. Carlson ,  Vassil N. Antonov

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01G4/08 ,  H01G4/12 ,  H01G4/33 ,  H01L27/108 ,  H01L49/02 ,  C01G23/04 ,  H01L23/373 ,  H05K1/02

CPC classification number: H01L21/02186 ,  C01G23/04 ,  C23C16/405 ,  C23C16/45534 ,  H01G4/085 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02233 ,  H01L21/02244 ,  H01L21/28556 ,  H01L21/32051 ,  H01L23/367 ,  H01L23/3735 ,  H01L23/3736 ,  H01L27/10808 ,  H01L27/1085 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/60 ,  H01L2924/0002 ,  H05K1/0203 ,  Y10T428/24802 ,  Y10T428/24975 ,  H01L2924/00

Abstract: Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.

Abstract translation: 一些实施方案包括形成金红石型氧化钛的方法。 可以形成单层的氮化钛。 然后氮化钛单层可以在小于或等于约550℃的温度下被氧化，以将其转化为金红石型氧化钛的单层。 一些实施方案包括形成具有金红石型氧化钛电介质的电容器并且具有至少一个包含氮化钛的电极的方法。 一些实施方案包括含有氮化钛和金红石型氧化钛的导热叠层，并且一些实施方案包括形成这种叠层的方法。