公开(公告)号：US11289487B2

公开(公告)日：2022-03-29

申请号：US15903964

申请日：2018-02-23

Applicant: Micron Technology, Inc.

Inventor： Matthew N. Rocklein ,  Paul A. Paduano ,  Sanket S. Kelkar ,  Christopher W. Petz ,  Zhe Song ,  Vassil Antonov ,  Qian Tao

IPC: H01L27/108 ,  H01L21/285 ,  H01L49/02

Abstract: A DRAM capacitor comprising a first capacitor electrode configured as a container and comprising a doped titanium nitride material, a capacitor dielectric on the first capacitor electrode, and a second capacitor electrode on the capacitor dielectric. Methods of forming the DRAM capacitor are also disclosed, as are semiconductor devices and systems comprising such DRAM capacitors.

公开(公告)号：US08927441B2

公开(公告)日：2015-01-06

申请号：US14079173

申请日：2013-11-13

Applicant: Micron Technology, Inc.

Inventor： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chris Carlson

IPC: H01L21/31 ,  H01L21/02 ,  H01L21/321 ,  H01L49/02 ,  H01L27/108

CPC classification number: H01L27/108 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/321 ,  H01L28/40

Abstract: Methods of forming rutile titanium dioxide comprise exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to an atmosphere consisting of oxygen gas (O2) to produce an oxidized transition metal over an unoxidized portion of the transition metal. Rutile titanium dioxide is formed over the oxidized transition metal by atomic layer deposition. The oxidized transition metal is sequentially exposed to a titanium halide precursor and an oxidizer. Other methods include oxidizing a portion of a ruthenium material to ruthenium(IV) oxide using an atmosphere consisting of O2, nitric oxide (NO), or nitrous oxide (N2O); and introducing a gaseous titanium halide precursor and water vapor to the ruthenium(IV) oxide to form rutile titanium dioxide on the ruthenium(IV) oxide by atomic layer deposition. Some methods include exposing transition metal to an atmosphere consisting essentially of O2, NO, and N2O.

Abstract translation: 形成金红石型二氧化钛的方法包括将过氧化物（例如V，Cr，W，Mn，Ru，Os，Rh，Ir，Pt，Ge，Sn或Pb）暴露于由氧气（O 2） 在过渡金属的未氧化部分上产生氧化过渡金属。 通过原子层沉积在氧化过渡金属上形成金红石二氧化钛。 氧化过渡金属依次暴露于卤化钛前体和氧化剂。 其它方法包括使用由O 2，一氧化氮（NO）或一氧化二氮（N 2 O）组成的气氛将氧化钌材料的一部分氧化成氧化钌（Ⅳ）; 并将气态卤化钛前体和水蒸气引入氧化钌（IV）中，以通过原子层沉积在氧化钌（IV）上形成金红石型二氧化钛。 一些方法包括将过渡金属暴露于基本上由O 2，NO和N 2 O组成的气氛中。

公开(公告)号：US20140065301A1

公开(公告)日：2014-03-06

申请号：US14079173

申请日：2013-11-13

Applicant: Micron Technology, Inc.

Inventor： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chris Carlson

IPC: H01L27/108

CPC classification number: H01L27/108 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/321 ,  H01L28/40

Abstract: Methods of forming rutile titanium dioxide comprise exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to an atmosphere consisting of oxygen gas (O2) to produce an oxidized transition metal over an unoxidized portion of the transition metal. Rutile titanium dioxide is formed over the oxidized transition metal by atomic layer deposition. The oxidized transition metal is sequentially exposed to a titanium halide precursor and an oxidizer. Other methods include oxidizing a portion of a ruthenium material to ruthenium(IV) oxide using an atmosphere consisting of O2, nitric oxide (NO), or nitrous oxide (N2O); and introducing a gaseous titanium halide precursor and water vapor to the ruthenium(IV) oxide to form rutile titanium dioxide on the ruthenium(IV) oxide by atomic layer deposition. Some methods include exposing transition metal to an atmosphere consisting essentially of O2, NO, and N2O.

Abstract translation: 形成金红石型二氧化钛的方法包括将过氧化物（例如V，Cr，W，Mn，Ru，Os，Rh，Ir，Pt，Ge，Sn或Pb）暴露于由氧气（O 2） 在过渡金属的未氧化部分上产生氧化过渡金属。 通过原子层沉积在氧化过渡金属上形成金红石二氧化钛。 氧化过渡金属依次暴露于卤化钛前体和氧化剂。 其他方法包括使用由O 2，一氧化氮（NO）或一氧化二氮（N 2 O）组成的气氛将氧化钌材料的一部分氧化成氧化钌（IV）。 并将气态卤化钛前体和水蒸气引入氧化钌（IV）中，以通过原子层沉积在氧化钌（IV）上形成金红石型二氧化钛。 一些方法包括将过渡金属暴露于基本上由O 2，NO和N 2 O组成的气氛中。

公开(公告)号：US20150140773A1

公开(公告)日：2015-05-21

申请号：US14596037

申请日：2015-01-13

Applicant: Micron Technology, Inc.

Inventor： Vassil Antonov ,  Jennifer K. Sigman ,  Vishwanath Bhat ,  Matthew N. Rocklein ,  Bhaskar Srinivasan ,  Chris Carlson

IPC: H01L49/02 ,  H01L21/225 ,  H01L21/02

CPC classification number: H01L28/40 ,  H01G4/1209 ,  H01G4/1218 ,  H01G4/1236 ,  H01G4/1254 ,  H01G4/1272 ,  H01G4/306 ,  H01G4/33 ,  H01L21/02172 ,  H01L21/02356 ,  H01L21/225 ,  Y10T428/2495

Abstract: Methods of forming an insulative element are described, including forming a first metal oxide material having a first dielectric constant, forming a second metal oxide material having a second dielectric constant different from the first, and heating at least portions of the structure to crystallize at least a portion of at least one of the first dielectric material and the second dielectric material. Methods of forming a capacitor are described, including forming a first electrode, forming a dielectric material with a first oxide and a second oxide over the first electrode, and forming a second electrode over the dielectric material. Structures including dielectric materials are also described.

Abstract translation: 描述了形成绝缘元件的方法，包括形成具有第一介电常数的第一金属氧化物材料，形成具有与第一介电常数不同的第二介电常数的第二金属氧化物材料，并加热该结构的至少部分至少结晶 第一电介质材料和第二电介质材料中的至少一个的一部分。 描述了形成电容器的方法，包括形成第一电极，在第一电极上形成具有第一氧化物和第二氧化物的介电材料，以及在电介质材料上形成第二电极。 还描述了包括电介质材料的结构。

公开(公告)号：US20150102460A1

公开(公告)日：2015-04-16

申请号：US14055620

申请日：2013-10-16

Applicant: Micron Technology, Inc.

Inventor： Matthew N. Rocklein ,  Kotha Sai Madhukar Reddy ,  Vassil Antonov ,  Vishwanath Bhat

IPC: H01L49/02 ,  H01L21/321 ,  H01L21/02 ,  H01L21/3115 ,  H01L21/283 ,  H01L27/108

CPC classification number: H01L28/60 ,  H01L28/40

Abstract: A semiconductor structure may include a first electrode over a substrate, a high-K dielectric material over the first electrode, and a second electrode over the high-K dielectric material, wherein at least one of the first electrode and the second electrode may include a material selected from the group consisting of a molybdenum nitride (MoxNy) material, a molybdenum oxynitride (MoOxNy) material, a molybdenum oxide (MoOx) material, and a molybdenum-based alloy material comprising molybdenum and nitrogen.

Abstract translation: 半导体结构可以包括在衬底上的第一电极，在第一电极上方的高K电介质材料和在高K电介质材料上的第二电极，其中第一电极和第二电极中的至少一个可以包括 选自氮化钼（MoxNy）材料，氮氧化钼（MoOxNy）材料，氧化钼（MoOx））材料和包含钼和氮的钼基合金材料的材料。

公开(公告)号：US20130307120A1

公开(公告)日：2013-11-21

申请号：US13950583

申请日：2013-07-25

Applicant: Micron Technology, Inc.

Inventor： Vishwanath Bhat ,  Dan Gealy ,  Vassil Antonov

IPC: H01L49/02

CPC classification number: H01L28/40 ,  C23C16/029 ,  C23C16/18 ,  H01G4/085 ,  H01G4/1209 ,  H01L27/10852 ,  H01L28/65 ,  H01L28/75

Abstract: Methods for forming ruthenium films and semiconductor devices such as capacitors that include the films are provided.

Abstract translation: 提供形成钌膜的方法和诸如包括膜的电容器的半导体器件。

公开(公告)号：US20150093874A1

公开(公告)日：2015-04-02

申请号：US14562298

申请日：2014-12-05

Applicant: Micron Technology, Inc.

Inventor： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chun-I Hsieh ,  Chris Carlson

IPC: H01L27/108 ,  H01L21/02 ,  H01L49/02

CPC classification number: H01L27/10855 ,  H01G4/20 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/02244 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

Abstract: Methods of forming a capacitor including forming a titanium nitride material within at least one aperture defined by a support material, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The titanium nitride material may be oxidized to a titanium dioxide material. A second conductive material may be formed over a surface of the titanium dioxide material. A semiconductor device may include at least one capacitor, wherein a major longitudinal portion of the at least one capacitor is not surrounded by a solid material. The capacitor may include a first electrode; a ruthenium oxide material laterally adjacent the first electrode; a rutile titanium dioxide material laterally adjacent the ruthenium oxide material; and a second electrode laterally adjacent the rutile titanium dioxide material.

Abstract translation: 形成电容器的方法包括在由支撑材料限定的至少一个孔内形成氮化钛材料，在所述氮化钛材料的所述至少一个孔内形成钌材料，以及在所述钌材料的上方形成第一导电材料 至少一个孔。 氮化钛材料可被氧化成二氧化钛材料。 可以在二氧化钛材料的表面上形成第二导电材料。 半导体器件可以包括至少一个电容器，其中至少一个电容器的主要纵向部分不被固体材料包围。 电容器可以包括第一电极; 横向邻近第一电极的氧化钌材料; 横向邻近氧化钌材料的金红石型二氧化钛材料; 和与金红石二氧化钛材料横向相邻的第二电极。

公开(公告)号：US08936991B2

公开(公告)日：2015-01-20

申请号：US14244451

申请日：2014-04-03

Applicant: Micron Technology, Inc.

Inventor： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chun-I Hsieh ,  Chris Carlson

IPC: H01L49/02 ,  H01L27/108 ,  H01G4/20

CPC classification number: H01L27/10855 ,  H01G4/20 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/02244 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

Abstract: Methods of forming a capacitor including forming a titanium nitride material within at least one aperture defined by a support material, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The titanium nitride material may be oxidized to a titanium dioxide material. A second conductive material may be formed over a surface of the titanium dioxide material. A semiconductor device may include at least one capacitor, wherein a major longitudinal portion of the at least one capacitor is not surrounded by a solid material. The capacitor may include a first electrode; a ruthenium oxide material laterally adjacent the first electrode; a rutile titanium dioxide material laterally adjacent the ruthenium oxide material; and a second electrode laterally adjacent the rutile titanium dioxide material.

公开(公告)号：US20220208767A1

公开(公告)日：2022-06-30

申请号：US17655257

申请日：2022-03-17

Applicant: Micron Technology, Inc.

Inventor： Matthew N. Rocklein ,  Paul A. Paduano ,  Sanket S. Kelkar ,  Christopher W. Petz ,  Zhe Song ,  Vassil Antonov ,  Qian Tao

IPC: H01L27/108 ,  H01L21/285 ,  H01L49/02

Abstract: A DRAM capacitor comprising a first capacitor electrode configured as a container and comprising a doped titanium nitride material, a capacitor dielectric on the first capacitor electrode, and a second capacitor electrode on the capacitor dielectric. Methods of forming the DRAM capacitor are also disclosed, as are semiconductor devices and systems comprising such DRAM capacitors.

公开(公告)号：US09159731B2

公开(公告)日：2015-10-13

申请号：US14562298

申请日：2014-12-05

Applicant: Micron Technology, Inc.

Inventor： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chun-I Hsieh ,  Chris Carlson

IPC: H01L21/20 ,  H01L27/108 ,  H01G4/20 ,  H01L49/02 ,  H01L21/02

CPC classification number: H01L27/10855 ,  H01G4/20 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/02244 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

Abstract: Methods of forming a capacitor including forming a titanium nitride material within at least one aperture defined by a support material, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The titanium nitride material may be oxidized to a titanium dioxide material. A second conductive material may be formed over a surface of the titanium dioxide material. A semiconductor device may include at least one capacitor, wherein a major longitudinal portion of the at least one capacitor is not surrounded by a solid material. The capacitor may include a first electrode; a ruthenium oxide material laterally adjacent the first electrode; a rutile titanium dioxide material laterally adjacent the ruthenium oxide material; and a second electrode laterally adjacent the rutile titanium dioxide material.

Abstract translation: 形成电容器的方法包括在由支撑材料限定的至少一个孔内形成氮化钛材料，在所述氮化钛材料的所述至少一个孔内形成钌材料，以及在所述钌材料的上方形成第一导电材料 至少一个孔。 氮化钛材料可被氧化成二氧化钛材料。 可以在二氧化钛材料的表面上形成第二导电材料。 半导体器件可以包括至少一个电容器，其中至少一个电容器的主要纵向部分不被固体材料包围。 电容器可以包括第一电极; 横向邻近第一电极的氧化钌材料; 横向邻近氧化钌材料的金红石型二氧化钛材料; 和与金红石二氧化钛材料横向相邻的第二电极。