中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

34 records (took 0.014 seconds)

    DEVICES INCLUDING MULTI-PORTION LINERS
    1.
    发明申请
    DEVICES INCLUDING MULTI-PORTION LINERS 审中-公开

    公开(公告)号：US20200274059A1

    公开(公告)日：2020-08-27

    申请号：US16870108

    申请日：2020-05-08

    Applicant: Micron Technology, Inc.

    Inventor： Kyle B. Campbell ,  Irina Vasilyeva ,  Farrell M. Good ,  Vishwanath Bhat ,  Kyuchul Chong

    IPC: H01L45/00 ,  H01L27/24

    Abstract: A method of forming a semiconductor structure. The method comprises forming a protective portion of a liner on at least a portion of stack structures on a substrate. The protective portion comprises a material formulated to adhere to the stack structures. A conformal portion of the liner is formed on the protective portion of the liner or on the protective portion of the liner and exposed materials of the stack structures. At least one of the protective portion and the conformal portion does not comprise aluminum. Additional methods of forming a semiconductor structure are disclosed, as are semiconductor structures including the liners comprising the protective portion and the conformal portion.

    Semiconductor structures including multi-portion liners
    2.
    发明授权
    Semiconductor structures including multi-portion liners 有权

    公开(公告)号：US10658580B2

    公开(公告)日：2020-05-19

    申请号：US15857873

    申请日：2017-12-29

    Applicant: Micron Technology, Inc.

    Inventor： Kyle B. Campbell ,  Irina Vasilyeva ,  Farrell M. Good ,  Vishwanath Bhat ,  Kyuchul Chong

    IPC: H01L45/00 ,  H01L27/24 ,  H01L21/768

    Abstract: A method of forming a semiconductor structure. The method comprises forming a protective portion of a liner on at least a portion of stack structures on a substrate. The protective portion comprises a material formulated to adhere to the stack structures. A conformal portion of the liner is formed on the protective portion of the liner or on the protective portion of the liner and exposed materials of the stack structures. At least one of the protective portion and the conformal portion does not comprise aluminum. Additional methods of forming a semiconductor structure are disclosed, as are semiconductor structures including the liners comprising the protective portion and the conformal portion.

    Methods of Forming Capacitors
    3.
    发明申请
    Methods of Forming Capacitors 有权
    形成电容器的方法

    公开(公告)号：US20160027642A1

    公开(公告)日：2016-01-28

    申请号：US14877677

    申请日：2015-10-07

    Applicant: Micron Technology, Inc.

    Inventor： Vassil N. Antonov ,  Vishwanath Bhat

    IPC: H01L21/02 ,  H01L21/3105 ,  H01L49/02

    CPC classification number: H01L21/02356 ,  H01L21/02175 ,  H01L21/02186 ,  H01L21/3105 ,  H01L28/65

    Abstract: A method of forming a capacitor includes depositing a dielectric metal oxide layer of a first phase to a thickness no greater than 75 Angstroms over an inner conductive capacitor electrode material. The first phase dielectric metal oxide layer has a k of at least 15. Conductive RuO2 is deposited over and into physical contact with the dielectric metal oxide layer. Then, the RuO2 and the dielectric metal oxide layer are annealed at a temperature below 500° C. The RuO2 in physical contact with the dielectric metal oxide during the annealing facilitates a change of the dielectric metal oxide layer from the first phase to a second crystalline phase having a higher k than the first phase. The annealed dielectric metal oxide layer is incorporated into a capacitor dielectric region of a capacitor construction. Other implementations are disclosed.

    Abstract translation: 形成电容器的方法包括在内部导电电容器电极材料上沉积第一相的电介质金属氧化物层至不大于75埃的厚度。 第一相介电金属氧化物层的k至少为15.导电RuO 2沉积在物理接触介电金属氧化物层上。 然后，RuO 2和介电金属氧化物层在低于500℃的温度下退火。退火期间与电介质金属氧化物物理接触的RuO 2促进介电金属氧化物层从第一相到第二晶体的变化 相具有比第一相高的k。 退火的介质金属氧化物层被结合到电容器结构的电容器电介质区域中。 公开了其他实现。

    Methods of forming rutile titanium dioxide
    4.
    发明授权
    Methods of forming rutile titanium dioxide 有权
    形成金红石二氧化钛的方法

    公开(公告)号：US08927441B2

    公开(公告)日：2015-01-06

    申请号：US14079173

    申请日：2013-11-13

    Applicant: Micron Technology, Inc.

    Inventor： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chris Carlson

    IPC: H01L21/31 ,  H01L21/02 ,  H01L21/321 ,  H01L49/02 ,  H01L27/108

    CPC classification number: H01L27/108 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/321 ,  H01L28/40

    Abstract: Methods of forming rutile titanium dioxide comprise exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to an atmosphere consisting of oxygen gas (O2) to produce an oxidized transition metal over an unoxidized portion of the transition metal. Rutile titanium dioxide is formed over the oxidized transition metal by atomic layer deposition. The oxidized transition metal is sequentially exposed to a titanium halide precursor and an oxidizer. Other methods include oxidizing a portion of a ruthenium material to ruthenium(IV) oxide using an atmosphere consisting of O2, nitric oxide (NO), or nitrous oxide (N2O); and introducing a gaseous titanium halide precursor and water vapor to the ruthenium(IV) oxide to form rutile titanium dioxide on the ruthenium(IV) oxide by atomic layer deposition. Some methods include exposing transition metal to an atmosphere consisting essentially of O2, NO, and N2O.

    Abstract translation: 形成金红石型二氧化钛的方法包括将过氧化物（例如V，Cr，W，Mn，Ru，Os，Rh，Ir，Pt，Ge，Sn或Pb）暴露于由氧气（O 2） 在过渡金属的未氧化部分上产生氧化过渡金属。 通过原子层沉积在氧化过渡金属上形成金红石二氧化钛。 氧化过渡金属依次暴露于卤化钛前体和氧化剂。 其它方法包括使用由O 2，一氧化氮（NO）或一氧化二氮（N 2 O）组成的气氛将氧化钌材料的一部分氧化成氧化钌（Ⅳ）; 并将气态卤化钛前体和水蒸气引入氧化钌（IV）中，以通过原子层沉积在氧化钌（IV）上形成金红石型二氧化钛。 一些方法包括将过渡金属暴露于基本上由O 2，NO和N 2 O组成的气氛中。

    Capacitors Having Dielectric Regions that Include Multiple Metal Oxide-Comprising Materials
    5.
    发明申请
    Capacitors Having Dielectric Regions that Include Multiple Metal Oxide-Comprising Materials 审中-公开
    具有包含多种金属氧化物的材料的介电区域的电容器

    公开(公告)号：US20150001674A1

    公开(公告)日：2015-01-01

    申请号：US14486075

    申请日：2014-09-15

    Applicant: Micron Technology, Inc.

    Inventor： Rishikesh Krishnan ,  John Smythe ,  Vishwanath Bhat ,  Noel Rocklein ,  Bhaskar Srinivasan ,  Jeff Hull ,  Chris Carlson

    IPC: H01L49/02 ,  H01L27/108

    CPC classification number: H01L28/56 ,  H01G4/10 ,  H01L27/108

    Abstract: Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.

    Abstract translation: 公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。 电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。 公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。

    METHODS OF FORMING RUTILE TITANIUM DIOXIDE
    6.
    发明申请
    METHODS OF FORMING RUTILE TITANIUM DIOXIDE 有权
    形成二氧化钛的方法

    公开(公告)号：US20140065301A1

    公开(公告)日：2014-03-06

    申请号：US14079173

    申请日：2013-11-13

    Applicant: Micron Technology, Inc.

    Inventor： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chris Carlson

    IPC: H01L27/108

    CPC classification number: H01L27/108 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/321 ,  H01L28/40

    Abstract: Methods of forming rutile titanium dioxide comprise exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to an atmosphere consisting of oxygen gas (O2) to produce an oxidized transition metal over an unoxidized portion of the transition metal. Rutile titanium dioxide is formed over the oxidized transition metal by atomic layer deposition. The oxidized transition metal is sequentially exposed to a titanium halide precursor and an oxidizer. Other methods include oxidizing a portion of a ruthenium material to ruthenium(IV) oxide using an atmosphere consisting of O2, nitric oxide (NO), or nitrous oxide (N2O); and introducing a gaseous titanium halide precursor and water vapor to the ruthenium(IV) oxide to form rutile titanium dioxide on the ruthenium(IV) oxide by atomic layer deposition. Some methods include exposing transition metal to an atmosphere consisting essentially of O2, NO, and N2O.

    Abstract translation: 形成金红石型二氧化钛的方法包括将过氧化物（例如V，Cr，W，Mn，Ru，Os，Rh，Ir，Pt，Ge，Sn或Pb）暴露于由氧气（O 2） 在过渡金属的未氧化部分上产生氧化过渡金属。 通过原子层沉积在氧化过渡金属上形成金红石二氧化钛。 氧化过渡金属依次暴露于卤化钛前体和氧化剂。 其他方法包括使用由O 2，一氧化氮（NO）或一氧化二氮（N 2 O）组成的气氛将氧化钌材料的一部分氧化成氧化钌（IV）。 并将气态卤化钛前体和水蒸气引入氧化钌（IV）中，以通过原子层沉积在氧化钌（IV）上形成金红石型二氧化钛。 一些方法包括将过渡金属暴露于基本上由O 2，NO和N 2 O组成的气氛中。

    METHODS OF FORMING CAPACITORS AND SEMICONDUCTOR DEVICES INCLUDING A RUTILE TITANIUM DIOXIDE MATERIAL
    8.
    发明申请
    METHODS OF FORMING CAPACITORS AND SEMICONDUCTOR DEVICES INCLUDING A RUTILE TITANIUM DIOXIDE MATERIAL 有权
    形成电容器和包括二氧化钛二氧化钛材料的半导体器件的方法

    公开(公告)号：US20150093874A1

    公开(公告)日：2015-04-02

    申请号：US14562298

    申请日：2014-12-05

    Applicant: Micron Technology, Inc.

    Inventor： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chun-I Hsieh ,  Chris Carlson

    IPC: H01L27/108 ,  H01L21/02 ,  H01L49/02

    CPC classification number: H01L27/10855 ,  H01G4/20 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/02244 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

    Abstract: Methods of forming a capacitor including forming a titanium nitride material within at least one aperture defined by a support material, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The titanium nitride material may be oxidized to a titanium dioxide material. A second conductive material may be formed over a surface of the titanium dioxide material. A semiconductor device may include at least one capacitor, wherein a major longitudinal portion of the at least one capacitor is not surrounded by a solid material. The capacitor may include a first electrode; a ruthenium oxide material laterally adjacent the first electrode; a rutile titanium dioxide material laterally adjacent the ruthenium oxide material; and a second electrode laterally adjacent the rutile titanium dioxide material.

    Abstract translation: 形成电容器的方法包括在由支撑材料限定的至少一个孔内形成氮化钛材料，在所述氮化钛材料的所述至少一个孔内形成钌材料，以及在所述钌材料的上方形成第一导电材料 至少一个孔。 氮化钛材料可被氧化成二氧化钛材料。 可以在二氧化钛材料的表面上形成第二导电材料。 半导体器件可以包括至少一个电容器，其中至少一个电容器的主要纵向部分不被固体材料包围。 电容器可以包括第一电极; 横向邻近第一电极的氧化钌材料; 横向邻近氧化钌材料的金红石型二氧化钛材料; 和与金红石二氧化钛材料横向相邻的第二电极。

    Methods of forming semiconductor structures including multi-portion liners
    10.
    发明授权
    Methods of forming semiconductor structures including multi-portion liners 有权

    公开(公告)号：US10665782B2

    公开(公告)日：2020-05-26

    申请号：US16110760

    申请日：2018-08-23

    Applicant: Micron Technology, Inc.

    Inventor： Kyle B. Campbell ,  Irina Vasilyeva ,  Farrell M. Good ,  Vishwanath Bhat ,  Kyuchul Chong

    IPC: H01L45/00 ,  H01L27/24 ,  H01L21/768

    Abstract: A method of forming a semiconductor structure. The method comprises forming a protective portion of a liner on at least a portion of stack structures on a substrate. The protective portion comprises a material formulated to adhere to the stack structures. A conformal portion of the liner is formed on the protective portion of the liner or on the protective portion of the liner and exposed materials of the stack structures. At least one of the protective portion and the conformal portion does not comprise aluminum. Additional methods of forming a semiconductor structure are disclosed, as are semiconductor structures including the liners comprising the protective portion and the conformal portion.

Patent Agency Ranking