公开(公告)号：US20030015702A1

公开(公告)日：2003-01-23

申请号：US09908707

申请日：2001-07-20

申请人： MOTOROLA, INC.

发明人： Kurt W. Eisenbeiser ,  Zhiyi Yu ,  Ravindranath Droopad

IPC分类号： H01L021/00 ,  H01L021/30

CPC分类号： H01L21/7624 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02532

摘要： High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. A monocrystalline layer is then formed over the accommodating buffer layer, such that a lattice constant of the monocrystalline layer substantially matches the lattice constant of a subsequently grown monocrystalline film.

摘要翻译： 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 然后在容纳缓冲层上形成单晶层，使得单晶层的晶格常数与随后生长的单晶膜的晶格常数基本一致。

公开(公告)号：US20030013319A1

公开(公告)日：2003-01-16

申请号：US09901110

申请日：2001-07-10

申请人： MOTOROLA, INC.

发明人： John E. Holmes ,  Kurt W. Eisenbeiser ,  Rudy M. Emrick ,  Steven James Franson ,  Stephen Kent Rockwell

IPC分类号： H01L021/31 ,  H01L021/469 ,  H01L021/20 ,  H01L021/36

CPC分类号： H01L29/66318 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8221 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/0688 ,  H01L27/15 ,  H01L29/267 ,  H01L29/66462 ,  H01L2924/00011 ,  H01L2224/80001

摘要： A semiconductor structure with selective doping includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, at least one monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and a transistor in the at least one monocrystalline compound semiconductor material and including active regions having different conductivity levels under substantially identical bias conditions.

摘要翻译： 具有选择性掺杂的半导体结构包括单晶硅衬底，覆盖单晶硅衬底的非晶氧化物材料，覆盖在非晶氧化物材料上的单晶钙钛矿氧化物材料，覆盖单晶钙钛矿氧化物材料的至少一种单晶化合物半导体材料，以及晶体管 在至少一种单晶化合物半导体材料中，并且在基本上相同的偏压条件下包括具有不同导电率的有源区。

公开(公告)号：US20020158265A1

公开(公告)日：2002-10-31

申请号：US09842735

申请日：2001-04-26

申请人： Motorola, Inc.

发明人： Kurt W. Eisenbeiser

IPC分类号： H01L029/76 ,  H01L033/00

CPC分类号： H01S5/183 ,  H01L33/105 ,  H01L33/465 ,  H01S5/0261

摘要： A high contrast reflective mirror includes a plurality of alternating first monocrystalline layers and second monocrystalline layers. The first monocrystalline layers are formed of an oxide material that has a cubic structure and a first index of refraction. The second monocrystalline layers are formed of a semiconductor material that has a second index of refraction. The first index of refraction and the second index of refraction differ by at least about 0.5

摘要翻译： 高对比度反射镜包括多个交替的第一单晶层和第二单晶层。 第一单晶层由具有立方结构和第一折射率的氧化物材料形成。 第二单晶层由具有第二折射率的半导体材料形成。 第一折射率和第二折射率相差至少约0.5