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    Enhancing photoresist performance using electric fields
    11.
    发明授权
    Enhancing photoresist performance using electric fields 有权
    使用电场增强光致抗蚀剂性能

    公开(公告)号：US07374867B2

    公开(公告)日：2008-05-20

    申请号：US10679816

    申请日：2003-10-06

    申请人： Robert Bristol ,  Heidi Cao ,  Manish Chandhok ,  Robert Meagley ,  Vijayakumar S. Ramachandrarao

    发明人： Robert Bristol ,  Heidi Cao ,  Manish Chandhok ,  Robert Meagley ,  Vijayakumar S. Ramachandrarao

    IPC分类号： G03F7/26

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F7/093 ,  G03F7/11 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/3007 ,  G03F7/38

    摘要： Electric fields may be advantageously used in various steps of photolithographic processes. For example, prior to the pre-exposure bake, photoresists that have been spun-on the wafer may be exposed to an electric field to orient aggregates or other components within the unexposed photoresist. By aligning these aggregates or other components with the electric field, line edge roughness may be reduced, for example in connection with 193 nanometer photoresist. Likewise, during exposure, electric fields may be applied through uniquely situated electrodes or using a radio frequency coil. In addition, electric fields may be applied at virtually any point in the photolithography process by depositing a conductive electrode, which is subsequently removed during development. Finally, electric fields may be applied during the developing process to improve line edge roughness.

    摘要翻译： 电场可以有利地用于光刻工艺的各个步骤。 例如，在预曝光烘烤之前，已经旋涂在晶片上的光致抗蚀剂可以暴露于电场以取向未曝光的光致抗蚀剂内的聚集体或其它组分。 通过将这些聚集体或其它组分与电场对准，可以减少线边缘粗糙度，例如与193纳米光致抗蚀剂结合。 同样地，在曝光期间，可以通过独特的电极或使用射频线圈施加电场。 此外，可以通过沉积导电电极在光刻工艺中的几乎任何点处施加电场，导电电极随后在显影期间被去除。 最后，可以在显影过程中施加电场以改善线边缘粗糙度。

    Enhancing photoresist performance using electric fields
    12.
    发明申请
    Enhancing photoresist performance using electric fields 有权
    使用电场增强光致抗蚀剂性能

    公开(公告)号：US20050074706A1

    公开(公告)日：2005-04-07

    申请号：US10679816

    申请日：2003-10-06

    申请人： Robert Bristol ,  Heidi Cao ,  Manish Chandhok ,  Robert Meagley ,  Vijayakumar Ramachandrarao

    发明人： Robert Bristol ,  Heidi Cao ,  Manish Chandhok ,  Robert Meagley ,  Vijayakumar Ramachandrarao

    IPC分类号： G03F1/14 ,  G03F7/09 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38 ,  G03F7/00

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F7/093 ,  G03F7/11 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/3007 ,  G03F7/38

    摘要： Electric fields may be advantageously used in various steps of photolithographic processes. For example, prior to the pre-exposure bake, photoresists that have been spun-on the wafer may be exposed to an electric field to orient aggregates or other components within the unexposed photoresist. By aligning these aggregates or other components with the electric field, line edge roughness may be reduced, for example in connection with 193 nanometer photoresist. Likewise, during exposure, electric fields may be applied through uniquely situated electrodes or using a radio frequency coil. In addition, electric fields may be applied at virtually any point in the photolithography process by depositing a conductive electrode, which is subsequently removed during development. Finally, electric fields may be applied during the developing process to improve line edge roughness.

    摘要翻译： 电场可以有利地用于光刻工艺的各个步骤。 例如，在预曝光烘烤之前，已经旋涂在晶片上的光致抗蚀剂可以暴露于电场以取向未曝光的光致抗蚀剂内的聚集体或其它组分。 通过将这些聚集体或其它组分与电场对准，可以减少线边缘粗糙度，例如与193纳米光致抗蚀剂结合。 同样地，在曝光期间，可以通过独特的电极或使用射频线圈施加电场。 此外，可以通过沉积导电电极在光刻工艺中的几乎任何点处施加电场，导电电极随后在显影期间被去除。 最后，可以在显影过程中施加电场以改善线边缘粗糙度。

    Technique to prevent tin contamination of mirrors and electrodes in an EUV lithography system
    13.
    发明授权
    Technique to prevent tin contamination of mirrors and electrodes in an EUV lithography system 有权
    防止EUV光刻系统中反射镜和电极的锡污染的技术

    公开(公告)号：US07567379B2

    公开(公告)日：2009-07-28

    申请号：US10835867

    申请日：2004-04-29

    申请人： Robert Bristol ,  Bryan J. Rice ,  Ming Fang ,  John P. Barnak ,  Melissa Shell

    发明人： Robert Bristol ,  Bryan J. Rice ,  Ming Fang ,  John P. Barnak ,  Melissa Shell

    IPC分类号： F21V9/04

    CPC分类号： G03F7/70958 ,  C23C14/083 ,  C23C14/165 ,  G03F7/70175 ,  G03F7/70916 ,  G21K1/06 ,  G21K2201/067

    摘要： Passivation coatings and gettering agents may be used in an Extreme Ultraviolet (EUV) source which uses tin (Sn) vapor as a plasma “fuel” to prevent contamination and corresponding loss of reflectivity due to tin contamination. The passivation coating may be a material to which tin does not adhere, and may be placed on reflective surfaces in the source chamber. The gettering agent may be a material that reacts strongly with tin, and may be placed outside of the collector mirrors and/or on non-reflective surfaces. A passivation coating may also be provided on the insulator between the anode and cathode of the source electrodes to prevent shorting due to tin coating the insulator surface.

    摘要翻译： 钝化涂层和吸气剂可以用于使用锡（Sn）蒸气作为等离子体“燃料”的极紫外（EUV）源，以防止污染和相应的锡污染引起的反射率的损失。 钝化涂层可以是锡不粘附的材料，并且可以放置在源室中的反射表面上。 吸气剂可以是与锡强烈反应的材料，并且可以放置在集电镜和/或非反射表面之外。 也可以在源电极的阳极和阴极之间的绝缘体上提供钝化涂层，以防止由于涂覆绝缘体表面的锡而导致短路。

    Erosion resistance of EUV source electrodes
    15.
    发明授权
    Erosion resistance of EUV source electrodes 有权
    EUV源电极的耐腐蚀性

    公开(公告)号：US07446329B2

    公开(公告)日：2008-11-04

    申请号：US10638261

    申请日：2003-08-07

    申请人： Robert Bristol ,  Arun Ramamoorthy ,  Bryan J. Rice

    发明人： Robert Bristol ,  Arun Ramamoorthy ,  Bryan J. Rice

    IPC分类号： H01J35/00

    CPC分类号： H05G2/003

    摘要： Erosion of material in an electrode in a plasma-produced extreme ultraviolet (EUV) light source may be reduced by treating the surface of the electrode. Grooves may be provided in the electrode surface to increase re-deposition of electrode material in the grooves. The electrode surface may be coated with a porous material to reduce erosion due to brittle destruction. The electrode surface may be coated with a pseudo-alloy to reduce erosion from surface waves caused by the plasma in molten material on the surface of the electrode.

    摘要翻译： 可以通过处理电极的表面来减少等离子体产生的极紫外（EUV）光源中的电极中的材料的侵蚀。 沟槽可以设置在电极表面中以增加沟槽中的电极材料的再沉积。 电极表面可以用多孔材料涂覆以减少由于脆性破坏引起的侵蚀。 电极表面可以涂覆有假合金，以减少由电极表面上的熔融材料中的等离子体引起的表面波的侵蚀。

    Extreme ultraviolet pellicle using a thin film and supportive mesh
    17.
    发明授权
    Extreme ultraviolet pellicle using a thin film and supportive mesh 有权
    极紫外线防护薄膜使用薄膜和支撑网

    公开(公告)号：US07153615B2

    公开(公告)日：2006-12-26

    申请号：US10645877

    申请日：2003-08-20

    申请人： Robert Bristol ,  Bryan J. Rice

    发明人： Robert Bristol ,  Bryan J. Rice

    IPC分类号： G03F1/00

    CPC分类号： G03F1/62 ,  B32B5/18 ,  B32B27/06 ,  B82Y10/00 ,  B82Y40/00 ,  C08J5/04 ,  G03F1/24 ,  Y10T428/24917

    摘要： An extreme ultraviolet (EUV) pellicle including a thin film or membrane and a supportive wire mesh. The pellicle allows EUV radiation to pass through the pellicle to a reticle but prevents particles from passing through the pellicle. A buffer gas supports the film against the wire mesh. The film or membrane may be embedded with support fibers or beams.

    摘要翻译： 包括薄膜或膜的极紫外（EUV）防护薄膜和支撑丝网。 防护薄膜可使EUV辐射通过防护薄膜到掩模版，但防止颗粒通过防护薄膜。 缓冲气体将薄膜支撑在金属丝网上。 膜或膜可以嵌入支撑纤维或梁。

    Methods to manufacture contaminant-gettering materials in the surface of EUV optics
    20.
    发明申请
    Methods to manufacture contaminant-gettering materials in the surface of EUV optics 有权
    在EUV光学表面制造污染物吸收材料的方法

    公开(公告)号：US20060216912A1

    公开(公告)日：2006-09-28

    申请号：US11092167

    申请日：2005-03-28

    申请人： Robert Bristol ,  Bruce Billett

    发明人： Robert Bristol ,  Bruce Billett

    IPC分类号： H05H1/00 ,  H01J35/00 ,  H01L21/322

    CPC分类号： G21K1/06 ,  G21K2201/067

    摘要： Methods to manufacture contaminant-gettering materials in the surface of EUV optics are described herein. An optical element is patterned and a contaminant-gettering material is formed on a surface of the optical element. In one embodiment, a photoresist is deposited on an optical coating on the optical element. Trenches are formed in the optical coating. The gettering agent is formed into the trenches over the photoresist. Next, the photoresist is removed from the optical coating to expose the gettering agent in the trenches. For another embodiment, patches of a nanotube forest having a gettering agent are formed in designated areas of an optical element. The gettering agent of the patches may be a plurality of carbon nanotubes. The optical coating is formed on a substrate between patches of the gettering agent.

    摘要翻译： 本文描述了在EUV光学器件的表面中制造污染物吸收材料的方法。 对光学元件进行图案化，并且在光学元件的表面上形成污染物吸收材料。 在一个实施例中，光致抗蚀剂沉积在光学元件上的光学涂层上。 在光学涂层中形成沟槽。 吸光剂形成在光致抗蚀剂上的沟槽中。 接下来，从光学涂层去除光致抗蚀剂以暴露沟槽中的吸杂剂。 对于另一个实施例，在光学元件的指定区域中形成具有吸气剂的纳米管森林的贴片。 补片的吸气剂可以是多个碳纳米管。 该光学涂层形成在吸气剂的贴片之间的衬底上。